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STP3N150产品简介:
ICGOO电子元器件商城为您提供STP3N150由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP3N150价格参考。STMicroelectronicsSTP3N150封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 1500V 2.5A(Tc) 140W(Tc) TO-220AB。您可以下载STP3N150参考资料、Datasheet数据手册功能说明书,资料中有STP3N150 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 1500V 2.5A TO-220MOSFET 1500V 6Ohm 2.5A N-Channel |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 2.5 A |
Id-连续漏极电流 | 2.5 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STP3N150PowerMESH™ |
数据手册 | |
产品型号 | STP3N150 |
Pd-PowerDissipation | 140 W |
Pd-功率耗散 | 140 W |
RdsOn-Drain-SourceResistance | 9 Ohms |
RdsOn-漏源导通电阻 | 9 Ohms |
Vds-Drain-SourceBreakdownVoltage | 1.5 kV |
Vds-漏源极击穿电压 | 1.5 kV |
Vgs-Gate-SourceBreakdownVoltage | +/- 30 V |
Vgs-栅源极击穿电压 | 30 V |
上升时间 | 47 ns |
下降时间 | 61 ns |
不同Id时的Vgs(th)(最大值) | 5V @ 250µA |
不同Vds时的输入电容(Ciss) | 939pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 29.3nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 9 欧姆 @ 1.3A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | TO-220AB |
其它名称 | 497-6327-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1168/PF158803?referrer=70071840 |
典型关闭延迟时间 | 45 ns |
功率-最大值 | 140W |
包装 | 管件 |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
工厂包装数量 | 50 |
晶体管极性 | N-Channel |
最大工作温度 | + 150 C |
最小工作温度 | - 50 C |
标准包装 | 50 |
漏源极电压(Vdss) | 1500V(1.5kV) |
特色产品 | http://www.digikey.com/cn/zh/ph/ST/MOSFET.html |
电流-连续漏极(Id)(25°C时) | 2.5A (Tc) |
系列 | STP3N150 |
通道模式 | Enhancement |
配置 | Single |
STFW3N150, STH3N150-2, STP3N150, STW3N150 N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH™ Power MOSFETs 2 in TO-3PF, H PAK-2, TO-220 and TO247 packages - Datasheet production data Features TAB Order codes V R max. I P 111 DS DS(on) D TOT 2 3 1 3 STFW3N150 63 W 2 H 2PAK-2 1 STH3N150-2 TO-3PF 1500 V 9 Ω 2.5 A STP3N150 140 W TAB STW3N150 • 100% avalanche tested 123 1 23 • Intrinsic capacitances and Qg minimized TO-220 TO-247 • High speed switching • Fully isolated TO-3PF plastic package, Figure 1. Internal schematic diagram creepage distance path is 5.4 mm (typ.) AM15557v1 D(2, TAB) D(TAB) Applications • Switching applications Description G(1) G(1) These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of S(3) S(2, 3) comparable standard parts from other manufacturers. (TO-3PF, TO-220 and TO-247) (H 2 PAK-2) Table 1. Device summary Order codes Marking Packages Packaging STFW3N150 TO-3PF Tube STH3N150-2 H2PAK-2 Tape and reel 3N150 STP3N150 TO-220 Tube STW3N150 TO-247 February 2014 DocID13102 Rev 11 1/23 This is information on a product in full production. www.st.com
Contents STFW3N150, STH3N150-2, STP3N150, STW3N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter H2PAK-2, Unit TO-3PF TO-220, TO-247 V Drain-source voltage 1500 V DS V Gate-source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 2.5(1) 2.5 A D C I Drain current (continuous) at T = 100 °C 1.6(1) 1.6 A D C I (1) Drain current (pulsed) 10(1) 10 A DM P Total dissipation at T = 25 °C 63 140 W TOT C Insulation withstand voltage (RMS) from V all three leads to external heat sink 3500 V ISO (t=1 s; T =25 °C) C Derating factor 0.5 1.12 W/°C T Storage temperature -50 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Pulse width limited by safe operating area Table 3. Thermal data Symbol Parameter TO-3PF H2PAK-2 TO-220 TO-247 Unit R Thermal resistance junction-case max 2 0.89 °C/W thj-case Thermal resistance junction-ambient R 50 62.5 50 °C/W thj-amb max R Thermal resistance junction-pcb max 35(1) °C/W thj-pcb 1. When mounted on 1 inch2 FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or I not-repetitive 2.5 A AR (pulse width limited by T max) j Single pulse avalanche energy EAS (starting Tj = 25 °C, ID = IAR, 450 mJ V = 50 V) DD DocID13102 Rev 11 3/23 23
Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150 2 Electrical characteristics (T = 25 °C unless otherwise specified) case Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 1500 V (BR)DSS breakdown voltage D GS Zero gate voltage VDS = 1500 V 10 μA I DSS drain current (VGS = 0) VDS = 1500 V, TC=125 °C 500 μA Gate-body leakage I V = ± 30 V ± 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 μA 3 4 5 V GS(th) DS GS D Static drain-source on- R V = 10 V, I = 1.3 A 6 9 Ω DS(on resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 30 V, I = 1.3 A - 2.6 - S fs transconductance DS D - - pF C Input capacitance - 939 - pF iss - - pF V = 25 V, f = 1 MHz, V = 0 DS GS C Output capacitance - 102 - pF oss Reverse transfer C - 13.2 - pF rss capacitance Equivalent output C (2) V =0 to 1200 V, V = 0 - 100 - pF oss eq. capacitance DS GS f = 1 MHz, gate DC Bias = 0, R Gate input resistance - 4 - Ω g test signal level = 20 mV, I = 0 D Q Total gate charge - 29.3 - nC g V = 1200 V, I = 2.5 A, DD D Q Gate-source charge V = 10 V - 4.6 - nC gs GS (Figure 19) Q Gate-drain charge - 17 - nC gd 1. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS 4/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time - 24 - ns d(on) V = 750 V, I = 1.25 A, t Rise time DD D - 47 - ns r R = 4.7 Ω, V = 10 V G GS t Turn-off-delay time - 45 - ns d(off) (Figure 18) t Fall time - 61 - ns f Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 2.5 A SD I (1) Source-drain current (pulsed) - 10 A SDM V (2) Forward on voltage I = 2.5 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time - 410 ns rr I = 2.5 A, di/dt = 100 A/μs SD Q Reverse recovery charge V = 60 V - 2.4 μC rr DD (Figure 20) I Reverse recovery current - 11.7 A RRM t Reverse recovery time - 540 ns rr I = 2.5 A, di/dt = 100 A/μs SD Q Reverse recovery charge V = 60 V, Tj = 150 °C - 3.3 μC rr DD (Figure 20) I Reverse recovery current - 12.3 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID13102 Rev 11 5/23 23
Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF ID AM03934v1 K TO3PF (A) δ=0.5 10 0.2 0.1 0.11 OperLiatimiotne id n btyh ism aarx eRa iDsS(on)Tj=150°C 1111000m0µmsµsss 10-1 0.01 0.020.05 Tc=25°C Single pulse Sinlge pulse 0.01 10-2 0.1 1 10 100 1000 VDS(V) 10-5 10-4 10-3 10-2 10-1 tp(s) Figure 4. Safe operating area for H2PAK-2 and Figure 5. Thermal impedance for H2PAK-2 and TO-220 TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized BV vs. temperature Figure 11. Static drain-source on-resistance DSS Figure 12. Gate charge vs. gate-source voltage Figure 13. Capacitance variations DocID13102 Rev 11 7/23 23
Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs. vs. temperature temperature Figure 16. Source-drain diode forward Figure 17. Maximum avalanche energy vs Tj characteristics 8/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID13102 Rev 11 9/23 23
Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 24. TO-3PF drawing 7627132_D DocID13102 Rev 11 11/23 23
Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Table 9. TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 10 10.20 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 12/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 25. H²PAK-2 drawing 8159712_C DocID13102 Rev 11 13/23 23
Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Table 10. H²PAK-2 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° 14/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 26. H²PAK-2 recommended footprint (dimensions are in mm) 8159712_C DocID13102 Rev 11 15/23 23
Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 27. TO-220 type A drawing (cid:19)(cid:19)(cid:20)(cid:24)(cid:28)(cid:27)(cid:27)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:36)(cid:66)(cid:53)(cid:72)(cid:89)(cid:66)(cid:55) 16/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 DocID13102 Rev 11 17/23 23
Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 28. TO-247 drawing 0075325_G 18/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 DocID13102 Rev 11 19/23 23
Packaging mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 5 Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 20/23 DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150 Packaging mechanical data Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Table 13. H²PAK-2 tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID13102 Rev 11 21/23 23
Revision history STFW3N150, STH3N150-2, STP3N150, STW3N150 6 Revision history Table 14. Document revision history Date Revision Changes 12-Jan-2007 1 First release 17-Apr-2007 2 Added new value on Table 6. 14-May-2007 3 The document has been reformatted 29-Aug-2007 4 R value changed, updated Figure15 DS(on) 09-Apr-2008 5 Added new package: TO-3PF 13-Feb-2009 6 Added P value for TO-3PF (Table2: Absolute maximum ratings) TOT – Document status promoted from preliminary data to datasheet 01-Dec-2009 7 – Removed TO-220FH package and mechanical data 10-Dec-2009 8 Corrected V value in Table2: Absolute maximum ratings ISO 29-Jun-2010 9 Corrected unit in Table 3. – Minor text changes – Modified: Table3 08-Feb-2013 10 – Changed: Figure1 – Added: H2PAK-2 package – Modified: Figure1 – Updated: Figure18, 19, 20 and 21 18-Feb-2014 11 – Updated: Figure27 and Table11 – Updated: Section4: Package mechanical data – Minor text changes 22/23 DocID13102 Rev 11
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