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  • 型号: STP3N150
  • 制造商: STMicroelectronics
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STP3N150产品简介:

ICGOO电子元器件商城为您提供STP3N150由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP3N150价格参考。STMicroelectronicsSTP3N150封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 1500V 2.5A(Tc) 140W(Tc) TO-220AB。您可以下载STP3N150参考资料、Datasheet数据手册功能说明书,资料中有STP3N150 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 1500V 2.5A TO-220MOSFET 1500V 6Ohm 2.5A N-Channel

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

2.5 A

Id-连续漏极电流

2.5 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STP3N150PowerMESH™

数据手册

点击此处下载产品Datasheet

产品型号

STP3N150

Pd-PowerDissipation

140 W

Pd-功率耗散

140 W

RdsOn-Drain-SourceResistance

9 Ohms

RdsOn-漏源导通电阻

9 Ohms

Vds-Drain-SourceBreakdownVoltage

1.5 kV

Vds-漏源极击穿电压

1.5 kV

Vgs-Gate-SourceBreakdownVoltage

+/- 30 V

Vgs-栅源极击穿电压

30 V

上升时间

47 ns

下降时间

61 ns

不同Id时的Vgs(th)(最大值)

5V @ 250µA

不同Vds时的输入电容(Ciss)

939pF @ 25V

不同Vgs时的栅极电荷(Qg)

29.3nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

9 欧姆 @ 1.3A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

TO-220AB

其它名称

497-6327-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1168/PF158803?referrer=70071840

典型关闭延迟时间

45 ns

功率-最大值

140W

包装

管件

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

工厂包装数量

50

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 50 C

标准包装

50

漏源极电压(Vdss)

1500V(1.5kV)

特色产品

http://www.digikey.com/cn/zh/ph/ST/MOSFET.html

电流-连续漏极(Id)(25°C时)

2.5A (Tc)

系列

STP3N150

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STFW3N150, STH3N150-2, STP3N150, STW3N150 N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH™ Power MOSFETs 2 in TO-3PF, H PAK-2, TO-220 and TO247 packages - Datasheet production data Features TAB Order codes V R max. I P 111 DS DS(on) D TOT 2 3 1 3 STFW3N150 63 W 2 H 2PAK-2 1 STH3N150-2 TO-3PF 1500 V 9 Ω 2.5 A STP3N150 140 W TAB STW3N150 • 100% avalanche tested 123 1 23 • Intrinsic capacitances and Qg minimized TO-220 TO-247 • High speed switching • Fully isolated TO-3PF plastic package, Figure 1. Internal schematic diagram creepage distance path is 5.4 mm (typ.) AM15557v1 D(2, TAB) D(TAB) Applications • Switching applications Description G(1) G(1) These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of S(3) S(2, 3) comparable standard parts from other manufacturers. (TO-3PF, TO-220 and TO-247) (H 2 PAK-2) Table 1. Device summary Order codes Marking Packages Packaging STFW3N150 TO-3PF Tube STH3N150-2 H2PAK-2 Tape and reel 3N150 STP3N150 TO-220 Tube STW3N150 TO-247 February 2014 DocID13102 Rev 11 1/23 This is information on a product in full production. www.st.com

Contents STFW3N150, STH3N150-2, STP3N150, STW3N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter H2PAK-2, Unit TO-3PF TO-220, TO-247 V Drain-source voltage 1500 V DS V Gate-source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 2.5(1) 2.5 A D C I Drain current (continuous) at T = 100 °C 1.6(1) 1.6 A D C I (1) Drain current (pulsed) 10(1) 10 A DM P Total dissipation at T = 25 °C 63 140 W TOT C Insulation withstand voltage (RMS) from V all three leads to external heat sink 3500 V ISO (t=1 s; T =25 °C) C Derating factor 0.5 1.12 W/°C T Storage temperature -50 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Pulse width limited by safe operating area Table 3. Thermal data Symbol Parameter TO-3PF H2PAK-2 TO-220 TO-247 Unit R Thermal resistance junction-case max 2 0.89 °C/W thj-case Thermal resistance junction-ambient R 50 62.5 50 °C/W thj-amb max R Thermal resistance junction-pcb max 35(1) °C/W thj-pcb 1. When mounted on 1 inch2 FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or I not-repetitive 2.5 A AR (pulse width limited by T max) j Single pulse avalanche energy EAS (starting Tj = 25 °C, ID = IAR, 450 mJ V = 50 V) DD DocID13102 Rev 11 3/23 23

Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150 2 Electrical characteristics (T = 25 °C unless otherwise specified) case Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 1500 V (BR)DSS breakdown voltage D GS Zero gate voltage VDS = 1500 V 10 μA I DSS drain current (VGS = 0) VDS = 1500 V, TC=125 °C 500 μA Gate-body leakage I V = ± 30 V ± 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 μA 3 4 5 V GS(th) DS GS D Static drain-source on- R V = 10 V, I = 1.3 A 6 9 Ω DS(on resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 30 V, I = 1.3 A - 2.6 - S fs transconductance DS D - - pF C Input capacitance - 939 - pF iss - - pF V = 25 V, f = 1 MHz, V = 0 DS GS C Output capacitance - 102 - pF oss Reverse transfer C - 13.2 - pF rss capacitance Equivalent output C (2) V =0 to 1200 V, V = 0 - 100 - pF oss eq. capacitance DS GS f = 1 MHz, gate DC Bias = 0, R Gate input resistance - 4 - Ω g test signal level = 20 mV, I = 0 D Q Total gate charge - 29.3 - nC g V = 1200 V, I = 2.5 A, DD D Q Gate-source charge V = 10 V - 4.6 - nC gs GS (Figure 19) Q Gate-drain charge - 17 - nC gd 1. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS 4/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time - 24 - ns d(on) V = 750 V, I = 1.25 A, t Rise time DD D - 47 - ns r R = 4.7 Ω, V = 10 V G GS t Turn-off-delay time - 45 - ns d(off) (Figure 18) t Fall time - 61 - ns f Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 2.5 A SD I (1) Source-drain current (pulsed) - 10 A SDM V (2) Forward on voltage I = 2.5 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time - 410 ns rr I = 2.5 A, di/dt = 100 A/μs SD Q Reverse recovery charge V = 60 V - 2.4 μC rr DD (Figure 20) I Reverse recovery current - 11.7 A RRM t Reverse recovery time - 540 ns rr I = 2.5 A, di/dt = 100 A/μs SD Q Reverse recovery charge V = 60 V, Tj = 150 °C - 3.3 μC rr DD (Figure 20) I Reverse recovery current - 12.3 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID13102 Rev 11 5/23 23

Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF ID AM03934v1 K TO3PF (A) δ=0.5 10 0.2 0.1 0.11 OperLiatimiotne id n btyh ism aarx eRa iDsS(on)Tj=150°C 1111000m0µmsµsss 10-1 0.01 0.020.05 Tc=25°C Single pulse Sinlge pulse 0.01 10-2 0.1 1 10 100 1000 VDS(V) 10-5 10-4 10-3 10-2 10-1 tp(s) Figure 4. Safe operating area for H2PAK-2 and Figure 5. Thermal impedance for H2PAK-2 and TO-220 TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized BV vs. temperature Figure 11. Static drain-source on-resistance DSS Figure 12. Gate charge vs. gate-source voltage Figure 13. Capacitance variations DocID13102 Rev 11 7/23 23

Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs. vs. temperature temperature Figure 16. Source-drain diode forward Figure 17. Maximum avalanche energy vs Tj characteristics 8/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID13102 Rev 11 9/23 23

Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 24. TO-3PF drawing 7627132_D DocID13102 Rev 11 11/23 23

Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Table 9. TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 10 10.20 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 12/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 25. H²PAK-2 drawing 8159712_C DocID13102 Rev 11 13/23 23

Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Table 10. H²PAK-2 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° 14/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 26. H²PAK-2 recommended footprint (dimensions are in mm) 8159712_C DocID13102 Rev 11 15/23 23

Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 27. TO-220 type A drawing (cid:19)(cid:19)(cid:20)(cid:24)(cid:28)(cid:27)(cid:27)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:36)(cid:66)(cid:53)(cid:72)(cid:89)(cid:66)(cid:55) 16/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 DocID13102 Rev 11 17/23 23

Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 28. TO-247 drawing 0075325_G 18/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 DocID13102 Rev 11 19/23 23

Packaging mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 5 Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 20/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Packaging mechanical data Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Table 13. H²PAK-2 tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID13102 Rev 11 21/23 23

Revision history STFW3N150, STH3N150-2, STP3N150, STW3N150 6 Revision history Table 14. Document revision history Date Revision Changes 12-Jan-2007 1 First release 17-Apr-2007 2 Added new value on Table 6. 14-May-2007 3 The document has been reformatted 29-Aug-2007 4 R value changed, updated Figure15 DS(on) 09-Apr-2008 5 Added new package: TO-3PF 13-Feb-2009 6 Added P value for TO-3PF (Table2: Absolute maximum ratings) TOT – Document status promoted from preliminary data to datasheet 01-Dec-2009 7 – Removed TO-220FH package and mechanical data 10-Dec-2009 8 Corrected V value in Table2: Absolute maximum ratings ISO 29-Jun-2010 9 Corrected unit in Table 3. – Minor text changes – Modified: Table3 08-Feb-2013 10 – Changed: Figure1 – Added: H2PAK-2 package – Modified: Figure1 – Updated: Figure18, 19, 20 and 21 18-Feb-2014 11 – Updated: Figure27 and Table11 – Updated: Section4: Package mechanical data – Minor text changes 22/23 DocID13102 Rev 11

STFW3N150, STH3N150-2, STP3N150, STW3N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID13102 Rev 11 23/23 23

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STP3N150 STW3N150 STFW3N150 STH3N150-2