STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Ω N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus™ low Q g 2 Power MOSFETs in TO-220FP, I PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB V @ R Order codes DS DS(on) I 123 23 TJmax max D I 2 PAK TO-220FP1 STF33N60M2 26 A(1) TAB STI33N60M2 650 V 0.125 Ω STP33N60M2 26 A STW33N60M2 123 1 23 1. Limited by maximum junction temperature. TO-220 TO-247 • Extremely low gate charge • Lower R x area vs previous generation DS(on) Figure 1. Internal schematic diagram • MDmesh™ II technology , TAB • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters, resonant converters Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q . These g revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Table 1. Device s ummary Order codes Marking Package Packaging STF33N60M2 TO-220FP STI33N60M2 I2PAK 33N60M2 Tube STP33N60M2 TO-220 STW33N60M2 TO-247 November 2013 DocID024298 Rev 2 1/19 This is information on a product in full production. www.st.com

Contents STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter I2PAK, TO-220 Unit TO-220FP TO-247 V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 26 26(1) A D C I Drain current (continuous) at T = 100 °C 16 16(1) A D C I (2) Drain current (pulsed) 104 104(1) A DM P Total dissipation at T = 25 °C 190 35 W TOT C dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from V all three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature stg - 55 to 150 °C T Max. operating junction temperature j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I ≤ 26 A, di/dt ≤ 400 A/µs; V < V , V = 400 V. SD DSpeak (BR)DSS DD 4. V ≤ 480 V DS Table 3. Thermal data Value Symbol Parameter I2PAK, Unit TO-220FP TO-247 TO-220 R Thermal resistance junction-case max 3.6 0.66 °C/W thj-case R Thermal resistance junction-ambient max 62.5 50 °C/W thj-amb Table 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not I 5 A AR repetitive (pulse width limited by T ) jmax Single pulse avalanche energy (starting E 2300 mJ AS T=25°C, I = I ; V =50) j D AR DD DocID024298 Rev 2 3/19 19

Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 600 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 600 V 1 µA I DS DSS drain current (V = 0) V = 600 V, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V ±10 µA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source R V = 10 V, I = 13 A 0.108 0.125 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 1781 - pF iss Coss Output capacitance VDS = 100 V, f = 1 MHz, - 85 - pF V = 0 C Reverse transfer GS rss - 2.5 - pF capacitance Equivalent output C (1) V = 0 to 480 V, V = 0 - 135 - pF oss eq. capacitance DS GS Intrinsic gate R f = 1 MHz open drain - 5.2 - Ω G resistance Q Total gate charge - 45.5 - nC g V = 480 V, I = 26 A, DD D Q Gate-source charge V = 10 V - 9.9 - nC gs GS (see Figure19) Q Gate-drain charge - 18.5 - nC gd 1. C is defined as a constant equivalent capacitance giving the same charging time as C oss eq. oss when V increases from 0 to 80% V DS DSS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t (on) Turn-on delay time - 16 - ns d V = 300 V, I = 13 A, DD D tr(v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 9.6 - ns t (off) Turn-off-delay time (see Figure18 and - 109 - ns d Figure23) t(i) Fall time - 9 - ns f 4/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 26 A SD I (1) Source-drain current (pulsed) - 104 A SDM V (2) Forward on voltage I = 26 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time - 375 ns rr I = 26 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 5.6 µC rr V = 60 V (see Figure23) DD I Reverse recovery current - 30 A RRM t Reverse recovery time - 478 ns rr I = 26 A, di/dt = 100 A/µs SD Q Reverse recovery charge V = 60 V, T = 150 °C - 7.7 µC rr DD j (see Figure23) I Reverse recovery current - 32.5 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024298 Rev 2 5/19 19

Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP ID AM17917v1 (A) 100 10 Operamtiitoend ibn yt himsa xa rReaD iS(son) 11000µµss Li 1 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. S afe operating area for I2PAK and Figure 5. Thermal impedance for I2PAK and TO-220 TO-220 ID AM17906v1 (A) 100 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100m0µsµss Li 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM17918v1 (A) 100 10 OpeLriatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100m0µsµss 1 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) 6/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics Figu r e 8. Output characteristics Figure 9. Transfer characteristics AM17907v1 AM17908v1 ID(A) VGS=7, 8, 9, 10V (IAD) 6V VDS=17V 60 60 50 50 40 40 5V 30 30 20 20 10 10 4V 0 0 0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance V(VG)S AMV17D9S09v1 RDS((oΩn)) AM17910v1 (V) VDD=480V VGS=10V 12 ID=26A 500 0.114 VDS 10 400 0.112 8 300 0.110 6 200 0.108 4 100 0.106 2 0 0 0.104 0 10 20 30 40 50 Qg(nC) 0 5 10 15 20 25 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM17911v1 Eoss AM17912v1 (pF) (µJ) 12 10000 10 Ciss 1000 8 6 100 Coss 4 10 2 Crss 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) DocID024298 Rev 2 7/19 19

Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Figure 14. Normalized gate threshold voltage vs Figure 15. Normalized on-resistance vs temperature temperature VGS(th) AM17913v1 RDS(on) AM17914v1 (norm) (norm) ID=250µA ID=13A 2.3 VDS=10V 1.1 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 0.7 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized V vs temperature Figure 17. Source-drain diode forward DS characteristics (nVoDrmS) AM17915v1 VSD(V) AM17916v1 ID=1mA 1.2 1.09 1.07 1.4 TJ=-50°C 1.05 1 1.03 0.8 1.01 0.99 0.6 TJ=25°C 0.97 TJ=150°C 0.4 0.95 0.2 0.93 0.91 0 -50 -25 0 25 50 75 100 TJ(°C) 0 2 4 6 8 1012141618202224 ISD(A) 8/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform (cid:57)(cid:11)(cid:37)(cid:53)(cid:12)(cid:39)(cid:54)(cid:54) ton toff (cid:57)(cid:39) tdon tr tdoff tf 90% 90% (cid:44)(cid:39)(cid:48) 10% (cid:44)(cid:39) 0 10% VDS (cid:57)(cid:39)(cid:39) (cid:57)(cid:39)(cid:39) 90% VGS (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:18)(cid:86)(cid:17) 0 10% AM01473v1 DocID024298 Rev 2 9/19 19

Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024298 Rev 2 11/19 19

Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Figure 24. TO-220FP drawing 7012510_Rev_K_B 12/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 25. I²PAK (TO-262) drawing 0004982_Rev_H DocID024298 Rev 2 13/19 19

Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Figure 26. TO-220 type A drawing (cid:16)(cid:16)(cid:17)(cid:21)(cid:25)(cid:24)(cid:24)(cid:63)(cid:84)(cid:89)(cid:80)(cid:69)(cid:33)(cid:63)(cid:50)(cid:69)(cid:86)(cid:63)(cid:52) DocID024298 Rev 2 15/19 19

Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/19 DocID024298 Rev 2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Figure 27. TO-247 drawing 0075325_G DocID024298 Rev 2 17/19 19

Revision history STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 5 Revision history Table 13. Document revision history Date Revision Changes 13-Sep-2013 1 First release. – Modified: R and I values in cover page DS(on) D – Modified: values in Table4 – Modified: R typical and maximum values in Table5, the 19-Nov-2013 2 DS(on) entire typical values in Table6, 7 and 8 – Added: Section2.1: Electrical characteristics (curves) – Minor text changes 18/19 DocID024298 Rev 2

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