STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Q g 2 2 Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages − Datasheet production data Features TAB TAB Order codes V @ T R max I 2 DS Jmax DS(on) D 3 1 STB24N60M2 D2PAK 123 STI24N60M2 I2PAK 650 V 0.19 Ω 18 A STP24N60M2 TAB STW24N60M2 • Extremely low gate charge 3 3 • Lower R x area vs previous generation 2 2 DS(on) 1 1 TO-220 TO-247 • Low gate input resistance • 100% avalanche tested Figure 1. Internal schematic diagram • Zener-protected D(2, TAB) Applications • Switching applications Description G(1) These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q . These g revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to S(3) yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the AM01476v1 most demanding high efficiency converters. Table 1. Device s ummary Order codes Marking Package Packaging STB24N60M2 D2PAK Tape and reel STI24N60M2 I2PAK 24N60M2 STP24N60M2 TO-220 Tube STW24N60M2 TO-247 February 2014 DocID023964 Rev 5 1/21 This is information on a product in full production. www.st.com 21

Contents STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 18 A D C I Drain current (continuous) at T = 100 °C 12 A D C I (1) Drain current (pulsed) 72 A DM P Total dissipation at T = 25 °C 150 W TOT C dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns T Storage temperature stg - 55 to 150 °C T Max. operating junction temperature j 1. Pulse width limited by safe operating area. 2. I ≤ 18 A, di/dt ≤ 400 A/μs; V < V , V =400 V. SD DSpeak (BR)DSS DD 3. V ≤ 480 V DS Table 3. Thermal data Value Symbol Parameter Unit D2PAK I2PAK TO-220 TO-247 R Thermal resistance junction-case max 0.83 °C/W thj-case R Thermal resistance junction-pcb max(1) 30 °C/W thj-pcb R Thermal resistance junction-ambient max 62.5 50 °C/W thj-amb 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not I 3.5 A AR repetitive (pulse width limited by T ) jmax Single pulse avalanche energy (starting E 180 mJ AS T=25°C, I = I ; V =50) j D AR DD DocID023964 Rev 5 3/21

Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 600 V (BR)DSS breakdown voltage D GS Zero gate voltage VDS = 600 V 1 μA I DSS drain current (VGS = 0) VDS = 600 V, TC=125 °C 100 μA Gate-body leakage I V = ± 25 V ±10 μA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 μA 2 3 4 V GS(th) DS GS D Static drain-source R V = 10 V, I = 9 A 0.168 0.19 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 1060 - pF iss Coss Output capacitance VDS = 100 V, f = 1 MHz, - 55 - pF V = 0 C Reverse transfer GS pF rss - 2.2 - capacitance Equivalent output C (1) V = 0 to 480 V, V = 0 - 258 - pF oss eq. capacitance DS GS Intrinsic gate R f = 1 MHz, I = 0 - 7 - Ω G resistance D Q Total gate charge - 29 - nC g V = 480 V, I = 18 A, DD D Q Gate-source charge V = 10 V - 6 - nC gs GS (see Figure17) Q Gate-drain charge - 12 - nC gd 1. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time - 14 - ns d(on) V = 300 V, I = 9 A, t Rise time DD D - 9 - ns r R = 4.7 Ω, V = 10 V G GS t Turn-off delay time - 60 - ns d(off) (see Figure16 and 21) t Fall time - 15 - ns f 4/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 18 A SD I (1) Source-drain current (pulsed) - 72 A SDM V (2) Forward on voltage I = 18 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time - 332 ns rr I = 18 A, di/dt = 100 A/μs Q Reverse recovery charge SD - 4 μC rr V = 60 V (see Figure18) DD I Reverse recovery current - 24 A RRM t Reverse recovery time - 450 ns rr I = 18 A, di/dt = 100 A/μs SD Q Reverse recovery charge V = 60 V, T = 150 °C - 5.5 μC rr DD j (see Figure18) I Reverse recovery current - 25 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID023964 Rev 5 5/21

Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK, I2PAK Figure 3. Thermal impedance D2PAK, I2PAK and and TO-220 TO-220 ID AM15495v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11100m0µsµss Li 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 ID AM15461v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11100m0µsµss Li 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM15470v1 AM15469v1 ID ID (A) VGS= 8, 9, 10 V (A) VGS= 7 V VDS= 17 V 40 40 35 35 30 30 25 VGS= 6 V 25 20 20 15 15 10 VGS= 5 V 10 5 5 VGS= 4 V 0 0 0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V) 6/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance VGS AMV1D54S71v1 RDS(Ω(on)) AM15465v1 (V) 12 VDS VDD=480 V (6V0)0 VGS=10V ID=18 A 0.176 10 500 0.172 8 400 6 300 0.168 4 200 0.164 2 100 0 0 0.160 0 5 10 15 20 25 30 Qg(nC) 0 4 8 12 16 ID(A) Figure 10. Capacitance variations Figure 11. Output capacitance stored energy C AM15665v1 Eoss AM15472v1 (pF) (µJ) 8 1000 Ciss 7 6 5 100 4 Coss 3 10 2 Crss 1 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs temperature temperature VGS(th) AM15473v1 RDS(on) AM15464v1 (norm) (norm) ID = 250 µA 1.1 2.3 ID = 9 A 2.1 VGS = 10 V 1.0 1.9 1.7 0.9 1.5 1.3 0.8 1.1 0.9 0.7 0.7 0.6 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) DocID023964 Rev 5 7/21

Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 14. Source-drain diode forward Figure 15. Normalized V vs temperature (BR)DSS characteristics VSD AM15468v1 V(BR)DSS AM15466v1 (V) (norm) 1.11 1.4 1.09 ID = 1mA 1.2 TJ=-50°C 1.07 1 1.05 0.8 1.03 1.01 0.6 TJ=150°C TJ=25°C 0.99 0.4 0.97 0.2 0.95 0 0.93 0 2 4 6 8 10 12 14 16 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) 8/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Test circuits 3 Test circuits Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform (cid:57)(cid:11)(cid:37)(cid:53)(cid:12)(cid:39)(cid:54)(cid:54) ton toff (cid:57)(cid:39) tdon tr tdoff tf 90% 90% (cid:44)(cid:39)(cid:48) 10% (cid:44)(cid:39) 0 10% VDS (cid:57)(cid:39)(cid:39) (cid:57)(cid:39)(cid:39) 90% VGS (cid:36)(cid:48)(cid:19)(cid:20)(cid:23)(cid:26)(cid:21)(cid:89)(cid:20) 0 10% AM01473v1 DocID023964 Rev 5 9/21

Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 22. D²PAK (TO-263) drawing 0079457_T 10/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° DocID023964 Rev 5 11/21

Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 23. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint Figure 24. I²PAK (TO-262) drawing 0004982_Rev_H a. All dimension are in millimeters 12/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 DocID023964 Rev 5 13/21

Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 25. TO-220 type A drawing (cid:19)(cid:19)(cid:20)(cid:24)(cid:28)(cid:27)(cid:27)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:36)(cid:66)(cid:53)(cid:72)(cid:89)(cid:66)(cid:55) 14/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 DocID023964 Rev 5 15/21

Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Figure 26. TO-247 drawing 0075325_G 16/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 DocID023964 Rev 5 17/21

Packaging mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 5 Packaging mechanical data Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 18/21 DocID023964 Rev 5

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Packaging mechanical data Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID023964 Rev 5 19/21

Revision history STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 6 Revision history Table 14. Document revision history Date Revision Changes 10-Dec-2012 1 First release. Added MOSFET dv/dt ruggedness in Table2: Absolute maximum 20-Dec-2012 2 ratings. 14-Jan-2013 3 Modified: Figure16 , 17, 18 and 17 – Minor text changes 28-May-2013 4 – Updated: Table7 – Updated: Table11 and Figure25 – Minor text changes 28-Feb-2014 5 – Modified: title of Figure15. – Modified: Figure16, 17, 18 and 19 20/21 DocID023964 Rev 5

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