STF20NK50Z, STP20NK50Z Ω N-channel 500 V, 0.23 , 17 A SuperMESH™ Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet — production data Features R Order codes V DS(on) I P DSS max D TOT TAB STF20NK50Z 500 V < 0.27 Ω 17 A 40 W STP20NK50Z 500 V < 0.27 Ω 17 A 190 W 3 3 2 2 1 1 ■ Extremely high dv/dt capability TO-220FP TO-220 ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitance Applications ■ Switching applications Figure 1. Internal schematic diagram D(2 or TAB) Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, G(1) achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF20NK50Z F20NK50Z TO-220FP Tube STP20NK50Z P20NK50Z TO-220 April 2012 Doc ID 023060 Rev 1 1/15 This is information on a product in full production. www.st.com 15

Contents STF20NK50Z, STP20NK50Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 023060 Rev 1

STF20NK50Z, STP20NK50Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP V Drain-source voltage 500 V DS V Gate-source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 17 17(1) A D C I Drain current (continuous) at T = 100 °C 10.71 10.71 (1) A D C I (2) Drain current (pulsed) 68 68 A DM P Total dissipation at T = 25 °C 190 40 W TOT C Derating factor 1.52 0.32 W/°C Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t = 1 s; T = 25 °C) C Gate-source human body model ESD 6 kV (R=1.5 kΩ, C=100 pF) dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns T Storage temperature -55 to 150 °C stg T Max operating junction temperature 150 °C j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I ≤ 17 A, di/dt ≤ 200 A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX. Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP R Thermal resistance junction-case max 0.66 3.1 °C/W thj-case R Thermal resistance junction-ambient max 62.5 62.5 °C/W thj-amb Table 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not- I 17 A AR repetitive (pulse width limited by Tj max) Single pulse avalanche energy E 850 mJ AS (starting T =25 °C, I =I , V =50 V) J D AR DD Doc ID 023060 Rev 1 3/15

Electrical characteristics STF20NK50Z, STP20NK50Z 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I =1 mA, V = 0 500 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 500 V 1 µA I DS DSS drain current (V = 0) V = 500 V, T = 125 °C 50 µA GS DS C Gate-body leakage I V = ± 20 V ± 10 µA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source R V = 10 V, I = 8.5 A 0.23 0.27 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance 2600 pF iss V = 25 V, f = 1 MHz, C Output capacitance DS - 328 pF oss V = 0 C Reverse transfer capacitance GS 72 pF rss C (1) Equivalent output capacitance V =0, V = 0 to 640 V - 187 pF oss eq. DS DS t Turn-on delay time 28 ns d(on) V = 250 V, I = 8.5 A, t Rise time DD D 20 ns r R = 4.7 Ω, V = 10 V - t Turn-off delay time G GS 70 ns d(off) (see Figure16) t Fall time 15 ns f Q Total gate charge V = 400 V, I = 17 A, 85 119 nC g DD D Q Gate-source charge V = 10 V - 15.5 nC gs GS Q Gate-drain charge (see Figure17) 42 nC gd 1. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V . DSS 4/15 Doc ID 023060 Rev 1

STF20NK50Z, STP20NK50Z Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 17 A SD - I (1) Source-drain current (pulsed) 68 A SDM V (2) Forward on voltage I = 17 A, V = 0 - 1.6 V SD SD GS I = 17 A, t Reverse recovery time SD 355 ns rr di/dt = 100 A/µs Q Reverse recovery charge - 3.90 µC rr V = 100 V I Reverse recovery current R 22 A RRM (see Figure18) I = 17 A, t Reverse recovery time SD 440 ns rr di/dt = 100 A/µs Q Reverse recovery charge - 5.72 µC rr V = 100 V, Tj = 150 °C I Reverse recovery current R 26 A RRM (see Figure18) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit Gate-source breakdown BV Igs=± 1mA (open drain) 30 - V GSO voltage The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 023060 Rev 1 5/15

Electrical characteristics STF20NK50Z, STP20NK50Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/15 Doc ID 023060 Rev 1

STF20NK50Z, STP20NK50Z Electrical characteristics Figure 8. Normalized B vs temperature Figure 9. Static drain-source on-resistance VDSS Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs vs temperature temperature Doc ID 023060 Rev 1 7/15

Electrical characteristics STF20NK50Z, STP20NK50Z Figure 14. Maximum avalanche energy vs Figure 15. Source-drain diode forward temperature characteristic 8/15 Doc ID 023060 Rev 1

STF20NK50Z, STP20NK50Z Test circuits 3 Test circuits Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 023060 Rev 1 9/15

Package mechanical data STF20NK50Z, STP20NK50Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 10/15 Doc ID 023060 Rev 1

STF20NK50Z, STP20NK50Z Package mechanical data Figure 22. TO-220FP drawing 7012510_Rev_K_B Doc ID 023060 Rev 1 11/15

Package mechanical data STF20NK50Z, STP20NK50Z Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 12/15 Doc ID 023060 Rev 1

STF20NK50Z, STP20NK50Z Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 023060 Rev 1 13/15

Revision history STF20NK50Z, STP20NK50Z 5 Revision history T able 11. Document revision history Date Revision Changes 05-Apr-2012 1 First release. 14/15 Doc ID 023060 Rev 1

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