STP200NF03 STB200NF03 - STB200NF03-1 Ω 2 2 N-channel 30V - 0.0032 - 120A - D PAK/I PAK/TO-220 STripFET™ III Power MOSFET General features Type V R I DSS DS(on) D STP200NF03 30V <0.0037Ω 120A(1) 3 STB200NF03 30V <0.0037Ω 120A(1) 1 3 2 STB200NF03-1 30V <0.0037Ω 120A(1) 1 D2PAK TO-220 1. Current Limited by Package ■ Standard threshold drive ■ 100% avalanche tested 123 Description I2PAK This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Internal schematic diagram Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Part number Marking Package Packaging STB200NF03T4 B200NF03 D2PAK Tape & reel STB200NF03-1 B200NF03 I2PAK Tube STP200NF03 P200NF03 TO-220 Tube February 2007 Rev 4 1/18 www.st.com 18

Contents STP200NF03 - STB200NF03 - STB200NF03-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18

STP200NF03 - STB200NF03 - STB200NF03-1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Drain-gate voltage (R = 20 kΩ) 30 V DGR GS V Gate- source voltage ± 20 V GS Drain current (continuous) at I (1) 120 A D T = 25°C C Drain current (continuous) at I (1) 120 A D T = 100°C C I (2) Drain current (pulsed) 480 A DM P Total dissipation at T = 25°C 300 W tot C Derating factor 2.0 W/°C dv/dt(3) Peak diode recovery voltage slope 1.5 V/ns E (4) Single pulse avalanche energy 1.45 J AS T Storage temperature stg -55 to 175 °C Max. operating junction T j temperature 1. Value limited by package 2. Pulse width limited by safe operating area. 3. I ≤120A, di/dt ≤ 400A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX 4. Starting T = 25 °C, I = 60A, V = 25V j D DD Table 2. Thermal data Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Rthj-pcb Thermal resistance junction-pcb see curve 13 and 14 T Maximum lead temperature for soldering purpose(1) 300 °C J 1. for 10 sec. 1.6mm from case 3/18

Electrical characteristics STP200NF03 - STB200NF03 - STB200NF03-1 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250µA, V =0 30 V (BR)DSS breakdown voltage D GS V = max ratings Zero gate voltage DS 1 µA I V = max ratings, DSS drain current (V = 0) DS 10 µA GS T = 125°C C Gate-body leakage I V = ± 20V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 2 4 V GS(th) DS GS D Static drain-source on R V = 10V, I = 60A 0.0032 0.0036 Ω DS(on) resistance GS D Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15V I =60A 200 S fs transconductance DS , D Input capacitance C 4950 pF Ciss Output capacitance VDS = 25V, f = 1MHz, 1750 pF Coss Reverse transfer VGS = 0 280 pF rss capacitance t Turn-on delay time 30 ns d(on) V = 15V, I = 60A t Rise time DD D 195 ns r R =4.7Ω V = 10V t Turn-off delay time G GS 75 ns d(off) (see Figure19) t Fall time 60 ns f Q Total gate charge V = 24V, I = 120A, 113 140 nC g DD D Q Gate-source charge V = 10V 32 nC gs GS Q Gate-drain charge (see Figure20) 41 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/18

STP200NF03 - STB200NF03 - STB200NF03-1 Electrical characteristics Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 120 A SD Source-drain current I (1) 480 A SDM (pulsed) V (2) Forward on voltage I = 120A, V = 0 1.3 V SD SD GS I = 120A, t Reverse recovery time SD 70 ns rr di/dt = 100A/µs, Q Reverse recovery charge 170 nC rr V = 25V, T = 150°C I Reverse recovery current DD j 5 A RRM (see Figure21) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/18

Electrical characteristics STP200NF03 - STB200NF03 - STB200NF03-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/18

STP200NF03 - STB200NF03 - STB200NF03-1 Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs. vs. temperature temperature Figure 11. Normalized B vs. temperature Figure 12. Source-drain diode forward VDSS characteristics 7/18

Electrical characteristics STP200NF03 - STB200NF03 - STB200NF03-1 Figure 13. Thermal resistance rthj-a vs. PCB Figure 14. Max power dissipation vs. PCB copper area copper area Figure 15. Power Derating vs. Tc Figure 16. Max Id Current vs. Tc Figure 17. Allowable Iav vs. Time in Avalanche 8/18

STP200NF03 - STB200NF03 - STB200NF03-1 Electrical characteristics The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: P = 0.5 * (1.3 * BV * I ) D(AVE) DSS AV E = P * t AS(AR) D(AVE) AV Where: I is the Allowable Current in Avalanche AV P is the Average Power Dissipation in Avalanche (Single Pulse) D(AVE) t is the Time in Avalanche AV To de rate above 25 oC, at fixed I , the following equation must be applied: AV I = 2 * (T - T )/ (1.3 * BV * Z ) AV jmax CASE DSS th Where: Z = K * R is the value coming from Normalized Thermal Response at fixed pulse width th th equal to T . AV 9/18

Spice thermal model STP200NF03 - STB200NF03 - STB200NF03-1 3 Spice thermal model Table 6. Spice parameters Parameter Node Value CTHERM1 5 - 4 0.011 CTHERM2 4 - 3 0.0012 CTHERM3 3 - 2 0.05 CTHERM4 2 - 1 0.1 RTHERM1 5 - 4 0.09 RTHERM2 4 - 3 0.02 RTHERM3 3 - 2 0.11 RTHERM4 2 - 1 0.17 Figure 18. Circuit 10/18

STP200NF03 - STB200NF03 - STB200NF03-1 Test circuit 4 Test circuit Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 11/18

Package mechanical data STP200NF03 - STB200NF03 - STB200NF03-1 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 12/18

STP200NF03 - STB200NF03 - STB200NF03-1 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 13/18

Package mechanical data STP200NF03 - STB200NF03 - STB200NF03-1 TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 14/18

STP200NF03 - STB200NF03 - STB200NF03-1 Package mechanical data TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 15/18

Packaging mechanical data STP200NF03 - STB200NF03 - STB200NF03-1 6 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 16/18

STP200NF03 - STB200NF03 - STB200NF03-1 Revision history 7 Revision history T able 7. Revision history Date Revision Changes 09-Sep-2004 2 Complete version 09-Aug-2006 3 New template, no content change 17/18

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