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STP16NF06产品简介:
ICGOO电子元器件商城为您提供STP16NF06由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP16NF06价格参考。STMicroelectronicsSTP16NF06封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 60V 16A(Tc) 45W(Tc) TO-220AB。您可以下载STP16NF06参考资料、Datasheet数据手册功能说明书,资料中有STP16NF06 详细功能的应用电路图电压和使用方法及教程。
STP16NF06 是一款由意法半导体(STMicroelectronics)生产的N沟道功率MOSFET,广泛应用于各种电力电子设备中。其主要应用场景包括但不限于以下几个方面: 1. 开关电源 STP16NF06 常用于开关电源中的功率转换电路。由于其低导通电阻(Rds(on))和快速开关特性,能够在高频开关状态下保持高效能,减少能量损耗。它适用于DC-DC转换器、AC-DC适配器等场合,帮助实现高效的电压调节。 2. 电机驱动 在小型电机驱动应用中,STP16NF06 可作为功率级器件,控制电机的启动、停止及调速。例如,在电动工具、家用电器(如风扇、水泵)以及小型机器人中,该MOSFET可以提供可靠的电流驱动能力,确保电机平稳运行。 3. 负载切换 STP16NF06 适合用于负载切换电路,特别是在需要频繁通断大电流负载的情况下。它能够承受较高的脉冲电流,并且具有良好的热稳定性,适用于汽车电子、工业自动化设备中的负载控制模块。 4. 电池管理系统 在电池管理系统(BMS)中,STP16NF06 可以用作充电/放电路径的开关元件,确保电池的安全充放电过程。它能够快速响应过流、短路等异常情况,保护电池免受损坏。 5. 逆变器 在光伏逆变器和其他类型的逆变器中,STP16NF06 可以作为逆变电路的关键组件之一,负责将直流电转换为交流电。它的低导通电阻有助于提高逆变效率,减少发热问题。 6. 保护电路 STP16NF06 还可用于设计过流保护、过温保护等安全电路。通过检测电流或温度信号,当达到预设阈值时,MOSFET会自动切断电路,防止系统因过载或其他故障而受损。 总之,STP16NF06 凭借其优异的电气性能和可靠性,成为众多电力电子应用的理想选择。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 60V 16A TO-220MOSFET N-Ch 60 Volt 16 Amp |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 16 A |
Id-连续漏极电流 | 16 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STP16NF06STripFET™ II |
数据手册 | |
产品型号 | STP16NF06 |
Pd-PowerDissipation | 45 W |
Pd-功率耗散 | 45 W |
RdsOn-Drain-SourceResistance | 100 mOhms |
RdsOn-漏源导通电阻 | 100 mOhms |
Vds-Drain-SourceBreakdownVoltage | 60 V |
Vds-漏源极击穿电压 | 60 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
Vgs-栅源极击穿电压 | 20 V |
上升时间 | 18 ns |
下降时间 | 6 ns |
不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
不同Vds时的输入电容(Ciss) | 315pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 13nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 100 毫欧 @ 8A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | TO-220AB |
其它名称 | 497-2766-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF64703?referrer=70071840 |
典型关闭延迟时间 | 17 ns |
功率-最大值 | 45W |
包装 | 管件 |
单位重量 | 2.240 g |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
工厂包装数量 | 1000 |
晶体管极性 | N-Channel |
最大工作温度 | + 175 C |
最小工作温度 | - 55 C |
标准包装 | 50 |
正向跨导-最小值 | 6.5 S |
漏源极电压(Vdss) | 60V |
电流-连续漏极(Id)(25°C时) | 16A (Tc) |
系列 | STP16NF06 |
通道模式 | Enhancement |
配置 | Single |
STP16NF06 STP16NF06FP Ω N-channel 60V - 0.08 - 16A - TO-220/TO-220FP STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STP16NF06 60V <0.1Ω 16A STP16NF06FP 60V <0.1Ω 11A ■ Exceptional dv/dt capability 1 23 123 ■ Low gate charge at 100°C TO-220 TO-220FP ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting Internal schematic diagram transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Part number Marking Package Packaging STP16NF06 P16NF06 TO-220 Tube STP16NF06FP P16NF06 TO-220FP Tube February 2007 Rev 8 1/14 www.st.com 14
Contents STP16NF06 - STP16NF06FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14
STP16NF06 - STP16NF06FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP V Drain-source voltage (V = 0) 60 V DS GS V Gate- source voltage ± 20 V GS I Drain current (continuous) at T = 25°C 16 11(1) A D C I Drain current (continuous) at T = 100°C 11 7.5(1) A D C I (2) Drain current (pulsed) 64 44(1) A DM P Total dissipation at T = 25°C 45 25 W tot C Derating factor 0.3 0.17 W/°C dv/dt (3) Peak diode recovery voltage slope 20 V/ns E (4) Single pulse avalanche energy 130 mJ AS Avalanche current, repetitive or not- I 16 A AR repetitive V Insulation withstand voltage (DC) -- 2500 V ISO T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Current limited by package’s thermal resistance 2. Pulse width limited by safe operating area. 3. I ≤ 16A, di/dt ≤ 200A/µs, V ≤ V , Tj ≤ T SD DD (BR)DSS JMAX 4. Starting T = 25 °C, I = 8A, V = 30V j D DD Table 2. Thermal data TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 3.33 6 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W T Maximum lead temperature for soldering purpose 300 °C J 3/14
Electrical characteristics STP16NF06 - STP16NF06FP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250µA, V =0 60 V (BR)DSS breakdown voltage D GS V = max ratings Zero gate voltage DS 1 µA I V = max ratings, DSS drain current (V = 0) DS 10 µA GS T = 125°C C Gate-body leakage I V = ± 20V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 2 4 V GS(th) DS GS D Static drain-source on R V = 10V, I = 8A 0.08 0.1 Ω DS(on) resistance GS D Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15V, I =8A 6.5 S fs transconductance DS D Input capacitance C 315 pF Ciss Output capacitance VDS = 25V, f = 1MHz, 70 pF Coss Reverse transfer VGS = 0 30 pF rss capacitance t Turn-on delay time 7 ns d(on) V = 30V, I = 8A t Rise time DD D 18 ns r R =4.7Ω V = 10V t Turn-off delay time G GS 17 ns d(off) (see Figure15) t Fall time 6 ns f Q Total gate charge V = 48V, I = 16A, 10 13 nC g DD D Q Gate-source charge V = 10V 3.5 nC gs GS Q Gate-drain charge (see Figure16) 3.5 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/14
STP16NF06 - STP16NF06FP Electrical characteristics Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 16 A SD Source-drain current I (1) 64 A SDM (pulsed) V (2) Forward on voltage I = 16A, V = 0 1.3 V SD SD GS I = 15A, t Reverse recovery time SD 50 ns rr di/dt = 100A/µs, Q Reverse recovery charge 88 nC rr V = 30V, T = 150°C I Reverse recovery current DD j 3.5 A RRM (see Figure17) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/14
Electrical characteristics STP16NF06 - STP16NF06FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characteristics Figure 6. Transfer characteristics 6/14
STP16NF06 - STP16NF06FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs. gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs. vs. temperature temperature 7/14
Electrical characteristics STP16NF06 - STP16NF06FP Figure 13. Source-drain diode forward Figure 14. Normalized B vs. temperature VDSS characteristics 8/14
STP16NF06 - STP16NF06FP Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/14
Package mechanical data STP16NF06 - STP16NF06FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14
STP16NF06 - STP16NF06FP Package mechanical data TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 11/14
Package mechanical data STP16NF06 - STP16NF06FP TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 12/14
STP16NF06 - STP16NF06FP Revision history 5 Revision history T able 6. Revision history Date Revision Changes 09-Sep-2004 4 Preliminary version 28-Jun-2005 5 Complete version 21-Jul-2005 6 ECOPACK label inserted 09-Aug-2006 7 New template, no content change 20-Feb-2007 8 Typo mistake on page 1 13/14
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