STF15N95K5, STP15N95K5, STW15N95K5 N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages - Datasheet production data Features Order codes V R I P DS DS(on)max D TOT STF15N95K5 30 W 3 2 STP15N95K5 950 V 0.5 Ω 12 A 1 170 W TO-220FP STW15N95K5 TAB • TO-220 worldwide best R DS(on) • Worldwide best FOM (figure of merit) • Ultra low gate charge 3 2 3 1 2 • 100% avalanche tested 1 TO-220 TO-247 • Zener-protected Figure 1. Internal schematic diagram Applications D(2,TAB) • Switching applications Description These devices are N-channel Power MOSFETs G(1) developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which S(3) require superior power density and high AM01476v1 efficiency. Table 1. Device summary Order codes Marking Package Packaging STF15N95K5 15N95K5 TO-220FP STP15N95K5 15N95K5 TO-220 Tube STW15N95K5 15N95K5 TO-247 February 2014 DocID025280 Rev 2 1/18 This is information on a product in full production. www.st.com 18

Contents STF15N95K5, STP15N95K5, STW15N95K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP TO-247 V Gate- source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 12 12(1) A D C I Drain current (continuous) at T = 100 °C 7.6 7.6(1) A D C I (2) Drain current (pulsed) 48 48(1) A DM P Total dissipation at T = 25 °C 170 30 W TOT C Max current during repetitive or single I pulse avalanche 4 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 124 mJ AS (starting T = 25 °C, I =I , V = 50 V) J D AS DD Gate-source human body model ESD 2 kV (R= 1,5 kΩ, C = 100 pF) Insulation withstand voltage (RMS) from V all three leads to external heat sink 2500 V ISO (t=1 s;T =25 °C) C dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature j -55 to 150 °C T Storage temperature stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I ≤ 12, di/dt ≤ 100 A/μs, V ≤ V SD DS(peak) (BR)DSS 4. V ≤ 760 V DS Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-247 TO-220FP R Thermal resistance junction-case max 0.74 4.2 °C/W thj-case R Thermal resistance junction-amb max 62.5 50 62.5 °C/W thj-amb DocID025280 Rev 2 3/18

Electrical characteristics STF15N95K5, STP15N95K5, STW15N95K5 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA, V = 0 950 V (BR)DSS voltage D GS Zero gate voltage drain VDS = 950 V, 1 μA I DSS current (VGS = 0) VDS = 950 V, Tc=125 °C 50 μA Gate body leakage current I V = ± 20 V ±10 μA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 100 μA 3 4 5 V GS(th) DS GS D Static drain-source R V = 10 V, I = 6 A 0.41 0.50 Ω DS(on) on-resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 855 - pF iss C Output capacitance - 65 pF oss V =100 V, f=1 MHz, V =0 DS GS Reverse transfer C - 1 pF rss capacitance Equivalent capacitance time C (1) - 104 - pF o(tr) related V = 0, V = 0 to 760 V GS DS Equivalent capacitance C (2) - 38 - pF o(er) energy related R Intrinsic gate resistance f = 1 MHz open drain - 6 - Ω G Q Total gate charge - 30 - nC g V = 760 V, I = 12 A DD D Q Gate-source charge V =10 V - 5 - nC gs GS (see Figure20) Q Gate-drain charge - 22 - nC gd 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C when oss V increases from 0 to 80% V DS DSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V increases from 0 to 80% V DS DSS 4/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Voltage delay time - 23 - ns d(v) V = 475 V, I = 6 A, t Voltage rise time DD D - 20 - ns r(v) R =4.7 Ω, V =10 V G GS t Current fall time - 62 - ns f(i) (see Figure22) t Crossing time - 11 - ns c(off) Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 12 A SD - I Source-drain current (pulsed) 48 A SDM V (1) Forward on voltage I = 12 A, V =0 - 1.5 V SD SD GS t Reverse recovery time - 444 ns rr I = 12 A, V = 60 V SD DD Q Reverse recovery charge di/dt = 100 A/μs, - 7 μC rr (see Figure21) I Reverse recovery current - 32 A RRM t Reverse recovery time I = 12 A,V = 60 V - 630 ns rr SD DD di/dt=100 A/μs, Q Reverse recovery charge - 9.2 μC rr Tj=150 °C(see IRRM Reverse recovery current Figure21) - 29 A 1. Pulsed: pulse duration = 300μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V Gate-source breakdown voltage I = ± 1 mA, I = 0 30 - - V (BR)GSO GS D The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID025280 Rev 2 5/18

Electrical characteristics STF15N95K5, STP15N95K5, STW15N95K5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP ID AM18027v1 (A) 10 1 OpeLiramtiitoend i nb yt hims aax reRa DiSs(on) 111m00µ0ssµs 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 ID AM18028v1 (A) 10 Operatimiotne id n btyh is maarx eaR iDsS(on) 111m00µ0ssµs Li 1 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM18029v1 (A) 10 10µs 1 Operatimiotne id n btyh is maarx eaR iDsS(on) 11m00sµs Li 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) 6/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM18030v1 AM18031v1 ID(A) ID VGS=10, 11V (A) VDS=20V 25 25 9V 20 20 15 15 8V 10 10 7V 5 5 6V 0 0 0 5 10 15 20 VDS(V) 5 6 7 8 9 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance VGS AM18032v1 VDS RDS(on) AM18033v1 (V) (V) (Ω) VDD=760 V 800 0.8 VGS=10V 12 VDS ID=12 A 700 0.7 10 600 0.6 8 500 0.5 400 0.4 6 300 0.3 4 200 0.2 2 100 0.1 0 0 0 0 5 10 15 20 25 30 Qg(nC) 2 4 6 8 10 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM18034v1 Eoss AM18035v1 (pF) (µJ) 14 1000 Ciss 12 100 10 Coss 8 10 6 Crss 4 1 2 0.1 0 0.1 1 10 100 VDS(V) 0 200 400 600 800 VDS(V) DocID025280 Rev 2 7/18

Electrical characteristics STF15N95K5, STP15N95K5, STW15N95K5 Figure 14. Normalized gate threshold voltage vs Figure 15. Normalized on-resistance vs temperature temperature VGS(th) AM18036v1 RDS(on) AM18037v1 (norm) (norm) 1.2 ID=100µA 2.5 ID=6A VGS=10V 1 2 0.8 1.5 0.6 1 0.4 0.5 0.2 0 0 -100 -50 0 50 100 150 TJ(°C) -100 0 100 TJ(°C) Figure 16. Normalized V vs temperature Figure 17. Source-drain diode forward DS characteristics (nVoDrmS) AM18038v1 VSD(V) AM18039v1 ID=1mA 1.1 1 TJ=-50°C 1.05 0.9 TJ=25°C 1 0.8 0.95 0.7 TJ=150°C 0.9 0.6 0.85 0.5 -100 -50 0 50 100 TJ(°C) 2 4 6 8 10 ISD(A) Figure 18. Maximum avalanche energy vs starting T J (cid:40)(cid:36)(cid:54) (cid:36)(cid:48)(cid:20)(cid:27)(cid:19)(cid:26)(cid:20)(cid:89)(cid:20) (cid:11)(cid:80)(cid:45)(cid:12) (cid:57)(cid:39)(cid:39)(cid:32)(cid:24)(cid:19)(cid:262)(cid:57) (cid:20)(cid:21)(cid:19) (cid:20)(cid:19)(cid:19) (cid:27)(cid:19) (cid:25)(cid:19) (cid:23)(cid:19) (cid:21)(cid:19) (cid:19) (cid:19) (cid:21)(cid:19) (cid:23)(cid:19) (cid:25)(cid:19) (cid:27)(cid:19) (cid:20)(cid:19)(cid:19) (cid:20)(cid:21)(cid:19) (cid:20)(cid:23)(cid:19) (cid:55)(cid:45)(cid:11)(cid:131)(cid:38)(cid:12) 8/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID025280 Rev 2 9/18

Package mechanical data STF15N95K5, STP15N95K5, STW15N95K5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B DocID025280 Rev 2 11/18

Package mechanical data STF15N95K5, STP15N95K5, STW15N95K5 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 12/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Package mechanical data Figure 26. TO-220 type A drawing (cid:19)(cid:19)(cid:20)(cid:24)(cid:28)(cid:27)(cid:27)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:36)(cid:66)(cid:53)(cid:72)(cid:89)(cid:66)(cid:55) DocID025280 Rev 2 13/18

Package mechanical data STF15N95K5, STP15N95K5, STW15N95K5 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Package mechanical data Figure 27. TO-247 drawing 0075325_G Table 11. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 DocID025280 Rev 2 15/18

Package mechanical data STF15N95K5, STP15N95K5, STW15N95K5 Table 11. TO-247 mechanical data (continued) mm. Dim. Min. Typ. Max. e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/18 DocID025280 Rev 2

STF15N95K5, STP15N95K5, STW15N95K5 Revision history 5 Revision history Table 12. Document revision history Date Revision Changes 20-Sep-2013 1 First release. – Modified: IAR and EAS values in Table2 – Added: note 4 in Table2 – Modified: R values in Table3 thj-case 07-Feb-2014 2 – Modified: typical values in Table5, 6 and 7 – Added: Section2.1: Electrical characteristics (curves) – Updated: Figure19, 20, 21 and 22 – Minor text changes DocID025280 Rev 2 17/18

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