STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh™ II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages − Datasheet production data Features TAB Order codes V @ T R max I DS Jmax DS(on) D 3 1 STD13NM60ND 3 DPAK 12 STF13NM60ND 650 V 0.38 Ω 11 A TO-220FP STP13NM60ND TAB • The worldwide best R * area among fast DS(on) recovery diode devices 23 • 100% avalanche tested 1 TO-220 • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche Figure 1. Internal schematic diagram capabilities (cid:39)(cid:11)(cid:21)(cid:15)(cid:262)(cid:55)(cid:36)(cid:37)(cid:12) Applications • Switching applications Description (cid:42)(cid:11)(cid:20)(cid:12) These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ (cid:54)(cid:11)(cid:22)(cid:12) technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior (cid:36)(cid:48)(cid:19)(cid:20)(cid:23)(cid:26)(cid:24)(cid:89)(cid:20) switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device s ummary Order codes Marking Package Packaging STD13NM60ND DPAK Tape and reel STF13NM60ND 13NM60ND TO-220FP Tube STP13NM60ND TO-220 May 2013 DocID024645 Rev 1 1/21 This is information on a product in full production. www.st.com 21

Contents STD13NM60ND, STF13NM60ND, STP13NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP V Drain-source voltage 600 V DS V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25°C 11 11 (1) A D C I Drain current (continuous) at T = 100°C 6.93 6.93(1) A D C I (2) Drain current (pulsed) 44 44 (1) A DM P Total dissipation at T = 25°C 109 25 W TOT C dv/dt (3) Peak diode recovery voltage slope 40 V/ns dv/dt (4) MOSFET dv/dt ruggedness 40 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t=1s;T =25°C) C T Storage temperature -55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. I ≤ 11 A, di/dt ≤ 400 A/μs, V = 80% V , V ≤ V SD DD (BR)DSS DS(peak) (BR)DSS 4. V ≤ 480 V DS Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220FP TO-220 R Thermal resistance junction-case max 1.15 5 1.15 °C/W thj-case R Thermal resistance junction-amb max 62.5 °C/W thj-amb R (1) Thermal resistance junction-pcb max 50 °C/W thj-pcb 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not- I 3 A AS repetitive(1) EAS Single pulse avalanche energy (2) 162 mJ 1. Pulse width limited by Tj max 2. starting Tj= 25 °C, I =I , V = 50 V D AS DD DocID024645 Rev 1 3/21

Electrical characteristics STD13NM60ND, STF13NM60ND, STP13NM60ND 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA, V = 0 600 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = 600 V 1 μA DSS current (VGS = 0) VDS = 600 V, TC=125 °C 100 μA Gate body leakage current I V = ±20 V ±100 nA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 250 μA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 5.5 A 0.32 0.38 Ω DS(on) resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 845 - pF iss Coss Output capacitance VDS = 50 V, f =1 MHz, - 47 - pF V = 0 Reverse transfer GS C - 2.5 - pF rss capacitance Equivalent output C (1) V = 0, V = 0V to 480 V - 121 - pF oss eq. capacitance GS DS f=1 MHz Gate DC Bias=0 Rg Gate input resistance Test signal level=20 mV - 4.3 - Ω open drain Q Total gate charge - 24.5 - nC g V = 480 V, I = 11 A DD D Q Gate-source charge V = 10 V - 4.8 - nC gs GS (see Figure18) Q Gate-drain charge - 17 - nC gd 1. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS 4/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit t Turn-on delay time - 46.5 - ns d(on) V = 300 V, I = 5.5 A, t Rise time DD D - 10 - ns r R = 4.7 Ω, V = 10 V G GS t Turn-off delay time - 9.6 - ns d(off) (see Figure17) t Fall time - 15.4 - ns f Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit I Source-drain current - 11 A SD I (1) Source-drain current (pulsed) - 44 A SDM V (2) Forward on voltage I = 11 A, V =0 - 1.6 V SD SD GS t Reverse recovery time - 150 ns rr I =11 A, di/dt =100 A/μs, SD Qrr Reverse recovery charge VDD = 100 V - 755 nC (see Figure19) I Reverse recovery current - 12 A RRM t Reverse recovery time - 187 ns rr V = 100 V DD Qrr Reverse recovery charge di/dt =100 A/μs, ISD = 11 A - 1271 nC Tj = 150 °C (see Figure19) I Reverse recovery current - 13.6 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300μs, duty cycle 1.5% DocID024645 Rev 1 5/21

Electrical characteristics STD13NM60ND, STF13NM60ND, STP13NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK ID AM15772v1 (A) 10µs 10 Operatimiotn eidn tbyh is maarxe aR isDS(on) 100µs Li 1 1ms Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID AM15773v1 (A) 101 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11000µµss Li 1ms Tj=150°C 10ms 0.1 Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220 ID AM15774v1 (A) 10 01 OperLaitimiotn eidn tbyh is maarxe aR isDS(on) 1110m0µ0ssµs Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) 6/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM15775v1 AM15776v1 ID ID(A) (A) VGS=7, 8, 9, 10V 24 VDS=20V - 22 22 6V 20 20 18 18 16 16 14 14 12 12 10 10 5V 8 8 6 6 4 4 2 4V 2 0 0 0 5 10 15 20 25 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance V(VG)S AMV15D7S79v1 RDS((oΩn)) AM15778v1 (V) VDS VDD=480V 0.340 VGS=10V 10 ID=11A 500 0.335 8 400 0.330 6 300 0.325 0.320 4 200 0.315 2 100 0.310 0 0 0.305 0 4 8 12 16 20 22Qg(nC) 0 2 4 6 8 10 ID(A) Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage vs. temperature C AM15780v1 VGS(th) AM15777v1 (pF) (norm) 1.10 ID=250 µA 1.05 1000 Ciss 1.00 0.95 100 0.90 Coss 0.85 10 0.80 Crss 0.75 1 0.70 0.1 1 10 100 VDS(V) -50 -25 0 25 50 75 100 125 TJ(°C) DocID024645 Rev 1 7/21

Electrical characteristics STD13NM60ND, STF13NM60ND, STP13NM60ND Figure 14. Normalized on-resistance vs Figure 15. Source-drain diode forward temperature characteristics RDS(on) AM15782v1 VSD(V) AM15783v1 (norm) 2.1 ID=11 A TJ=-50°C 1.2 1.9 1.7 TJ=25°C 1 1.5 1.3 0.8 TJ=150°C 1.1 0.9 0.6 0.7 0.5 0.4 -50 -25 0 25 50 75 100 125TJ(°C) 0 2 4 6 8 10 ISD(A) Figure 16. Normalized V vs temperature DS VDS AM15781v1 (norm) 1.08 ID=1mA 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 -50 -25 0 25 50 75 100 125 TJ(°C) 8/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Test circuits 3 Test circuits Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID024645 Rev 1 9/21

Package mechanical data STD13NM60ND, STF13NM60ND, STP13NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Package mechanical data Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R 0.20 V2 0° 8° DocID024645 Rev 1 11/21

Package mechanical data STD13NM60ND, STF13NM60ND, STP13NM60ND Figure 23. DPAK (TO-252) drawing 0068772_K 12/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Package mechanical data Figure 24. DPAK footprint (a) Footprint_REV_K a. All dimensions are in millimeters DocID024645 Rev 1 13/21

Package mechanical data STD13NM60ND, STF13NM60ND, STP13NM60ND Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 14/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B DocID024645 Rev 1 15/21

Package mechanical data STD13NM60ND, STF13NM60ND, STP13NM60ND Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 16/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S DocID024645 Rev 1 17/21

Packaging mechanical data STD13NM60ND, STF13NM60ND, STP13NM60ND 5 Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Packaging mechanical data Figure 27. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 28. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 DocID024645 Rev 1 19/21

Revision history STD13NM60ND, STF13NM60ND, STP13NM60ND 6 Revision history Table 13. Document revision history Date Revision Changes 15-May-2013 1 First release. 20/21 DocID024645 Rev 1

STD13NM60ND, STF13NM60ND, STP13NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID024645 Rev 1 21/21

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STD13NM60ND STF13NM60ND STP13NM60ND