STN4NF06L Datasheet Automotive-grade N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Features 4 Order code VDS RDS(on) max. ID STN4NF06L 60 V < 0.1 Ω 4 A 3 2 1 • AEC-Q101 qualified SOT-223 • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge D(2, 4) Applications • Switching applications G(1) Description This Power MOSFET has been developed using STMicroelectronics' unique S(3) STripFET process, which is specifically designed to minimize input capacitance and Int_schem_nTnZ_SOT_223 gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STN4NF06L Product summary Order code STN4NF06L Marking 4NF06L Package SOT-223 Packing Tape and reel DS5801 - Rev 3 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.

STN4NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0 V) 60 V VGS Gate-source voltage ±16 V Drain current (continuous) at TC = 25 °C 4 A ID(1) Drain current (continuous) at TC = 100 °C 2.9 A IDM(2) Drain current (pulsed) 16 A PTOT Total power dissipation at TC = 25 °C 3.3 W Derating Factor 0.026 W/°C dv/dt(3) Peak diode recovery avalanche energy 10 V/ns EAS(4) Single pulse avalanche energy 200 mJ Tstg Storage temperature range -55 to 150 °C TJ Operating junction temperature range 1. Current limited by the package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 3 A, di/dt ≤ 150 A/μs, VDD = V(BR)DSS, TJ ≤ TJ max. 4. Starting TJ = 25 °C, ID = 4 A, VDD = 30 V. Table 2. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 38 °C/W Thermal resistance junction-pcb Rthj-pcb(2) 100 °C/W TJ(3) Maximum lead temperature for soldering purpose 260 °C 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t <10 s. 2. When mounted on minimum recommended footprint. 3. For 10 s 1.6 mm from case. DS5801 - Rev 3 page 2/14

STN4NF06L Electrical characteristics 2 Electrical characteristics T = 25 °C unless otherwise specified C Table 3. On-/off-states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA 60 V VGS = 0 V, VDS = 60 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V, TC = 125 °C 10 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±16 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.8 V VGS = 10 V, ID = 1.5 A 0.07 0.10 RDS(on) Static drain-source on-resistance Ω VGS = 5 V, ID = 1.5 A 0.085 0.12 Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 340 pF Coss Output capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 63 pF Crss Reverse transfer capacitance - 30 pF Qg Total gate charge VDD = 48 V, ID = 3 A - 7 9 nC Qgs Gate-source charge RG = 4.7 Ω, VGS = 5 V - 1.5 nC (see Figure 14. Test circuit for gate Qgd Gate-drain charge charge behavior) - 2.8 nC Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 30 V, ID = 1.5 A, - 9 - ns tr Rise time RG = 4.7 Ω, VGS = 5 V - 25 - ns td(off) Turn-off delay time (see Figure 13. Test circuit for resistive - 20 - ns load switching times and tf Fall time Figure 18. Switching time waveform) - 10 - ns DS5801 - Rev 3 page 3/14

STN4NF06L Electrical characteristics Table 6. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 4 A ISDM(1) Source-drain current (pulsed) - 16 A VSD(2) Forward on voltage ISD = 4 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 4 A, di/dt = 100 A/µs, - 50 ns Qrr Reverse recovery charge VDD = 25 V, TJ = 150 °C - 88 nC (see Figure 15. Test circuit for inductive IRRM Reverse recovery current load switching and diode recovery times) - 3.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS5801 - Rev 3 page 4/14

STN4NF06L Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics ID AM09065v1 (A) 30 VDS=8V 25 20 15 10 5 0 0 2 4 6 8 VGS(V) Figure 6. Gate charge vs. gate-source voltage Figure 5. Static drain-source on resistance RDS(on) AM09066v1 (mΩ) 95 90 VGS=10V 85 80 75 70 65 60 55 50 0 1 2 3 4 5 ID(A) DS5801 - Rev 3 page 5/14

STN4NF06L Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs Figure 7. Capacitance variations temperature Figure 9. Normalized on-resistance vs temperature Figure 10. Source-drain diode forward characteristics VSD AM09067v1 VGS=10V (V) ID=1.5A TJ=-40°C 1.0 0.8 TJ=25°C 0.6 TJ=150°C 0.4 0.2 0 0 2 4 6 8 ISD(A) Figure 11. Normalized breakdown voltage vs temperature GC93240 DS5801 - Rev 3 page 6/14

STN4NF06L Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 + μF μF VDD VD VGS IG= CONST 100 Ω D.U.T. VGS RG D.U.T. pulse width 2200+ 2.7 kΩ VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit diode recovery times A A A L G DD.U.T. fdaiostde 100 µH VD 2200 3.3 25 Ω S B B B D µ3F.3 +1µ0F00 VDD ID +µF µF VDD G D.U.T. + RG S Vi D.U.T. _ pulse width AM01471v1 AM01470v1 Figure 17. Switching time waveform Figure 16. Unclamped inductive waveform ton toff V(BR)DSS td(on) tr td(off) tf VD 90% 90% IDM ID 0 10% VDS 10% VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1 DS5801 - Rev 3 page 7/14

STN4NF06L Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SOT-223 package information Figure 18. SOT-223 package outline 0046067_15 DS5801 - Rev 3 page 8/14

STN4NF06L SOT-223 package information Table 7. SOT-223 package mechanical data mm Dim. Min. Typ. Max. A 1.8 B 0.6 0.7 0.85 B1 2.9 3 3.15 c 0.24 0.26 0.35 D 6.3 6.5 6.7 e 2.3 e1 4.6 E 3.3 3.5 3.7 H 6.7 7 7.3 V 10 deg A1 0.02 0.1 Figure 19. SOT-223 recommended footprint (dimensions are in mm) 0046067 DS5801 - Rev 3 page 9/14

STN4NF06L SOT-223 packing information 4.2 SOT-223 packing information Figure 20. SOT-223 tape outline Figure 21. SOT-223 reel outline DS5801 - Rev 3 page 10/14

STN4NF06L SOT-223 packing information Table 8. SOT-223 tape and reel mechanical data Tape Tape mm mm Dim. Dim. Min. Typ. Max. Min. Max. A0 6.75 6.85 6.95 A 180 B0 7.30 7.40 7.50 N 60 K0 1.80 1.90 2.00 W1 12.4 F 5.40 5.50 5.60 W2 18.4 E 1.65 1.75 1.85 W3 11.9 15.4 W 11.7 12.0 12.3 P2 1.90 2.00 2.10 Base quantity pcs 1000 P0 3.90 4.00 4.10 Bulk quantity pcs 1000 P1 7.90 8.00 8.10 T 0.25 0.30 0.35 DΦ 1.50 1.55 1.60 D1Φ 1.50 1.60 1.70 DS5801 - Rev 3 page 11/14

STN4NF06L Revision history Table 9. Document revision history Date Version Changes 22-Apr-2008 1 Initial version. 29-Apr-2011 2 Figure 5, Figure 7, Figure 11 and Figure 12 have been updated. Updated Section 4.1 SOT-223 package information. 05-May-2020 3 Minor text changes. DS5801 - Rev 3 page 12/14

STN4NF06L Contents Contents 1 Electrical ratings ..................................................................2 2 Electrical characteristics...........................................................3 2.1 Electrical characteristics (curves) .................................................5 3 Test circuits .......................................................................7 4 Package information...............................................................8 4.1 SOT-223 package information....................................................8 4.2 SOT-223 packing information ...................................................10 Revision history .......................................................................12 DS5801 - Rev 3 page 13/14

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