STN1NK60Z, STQ1NK60ZR Ω N-channel 600 V, 13 typ., 0.3 A Zener-protected SuperMESH™ Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT 4 STN1NK60Z 3.3 W 600 V 15 Ω 0.3 A STQ1NK60ZR-AP 3 W 3 2 1 • 100% avalanche tested SOT-223 TO-92 (Ammopak) • Extremely high dv/dt capability • Gate charge minimized • ESD improved capability • Zener-protected Figure 1. Internal schematic diagram Applications D(2,4) • Switching applications Description These devices are N-channel Zener-protected G(1) Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a S(3) high level of dv/dt capability for the most demanding applications. AM01476v1 Table 1. Device s ummary Order codes Marking Package Packaging STN1NK60Z 1NK60Z SOT-223 Tape and reel STQ1NK60ZR-AP 1NK60ZR TO-92 Ammopak July 2014 DocID9509 Rev 14 1/18 This is information on a product in full production. www.st.com

Contents STN1NK60Z, STQ1NK60ZR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 SOT-223, STN1NK60Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-92 ammopack, STQ1NK60ZR-AP . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit SOT-223 TO-92 V Drain-source voltage 600 V DS V Gate-source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 0.3 A D C I Drain current (continuous) at T =100 °C 0.189 A D C I (1) Drain current (pulsed) 1.2 A DM P Total dissipation at T = 25 °C 3.3 3 W TOT C Derating factor 0.026 0.024 W/°C Human body model ESD 800 V C=100 pF, R=1.5 kΩ dv/dt(2) Peak diode recovery voltage slope 4.5 V/ns TJ Operating junction temperature °C - 55 to 150 Tstg Storage temperature °C 1. Pulse width limited by safe operating area 2. I ≤ 0.3 A, di/dt ≤ 200 A/µs, V = 80%V SD DD (BR)DSS Table 3. Thermal resistance Value Symbol Parameter Unit SOT-223 TO-92 R Thermal resistance junction-ambient max 38(1) 120 °C/W thj-amb R Thermal resistance junction-lead max 40 °C/W thj-lead 1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s. Table 4. Avalanche data Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 0.3 A AR (pulse width limited by T ) j max Single pulse avalanche energy E 60 mJ AS (starting T = 25 °C, I = I , V = 50 V) J D AR DD DocID9509 Rev 14 3/18 18

Electrical characteristics STN1NK60Z, STQ1NK60ZR 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage VGS= 0, ID = 1 mA 600 V VGS = 0, VDS =600 V 1 µA Zero gate voltage drain IDSS current VGS = 0, VDS =600 V, 50 µA T = 125 °C C IGSS Gate body leakage current VDS = 0, VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V Static drain-source RDS(on) on- resistance VGS = 10 V, ID = 0.4 A 13 15 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS =15 V, ID = 0.4 A - 0.5 S Ciss Input capacitance - 94 pF Coss Output capacitance VGS = 0, VDS = 25 V, - 17.6 pF f=1 MHz Reverse transfer Crss capacitance - 2.8 pF Equivalent output Coss eq(2). capacitance VGS= 0, VDS = 0 to 480 V - 11 pF Qg Total gate charge V =480 V, I = 0.8 A - 4.9 6.9 nC DD D Qgs Gate-source charge VGS =10 V - 1 nC (see Figure 19) Qgd Gate-drain charge - 2.7 nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS 4/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time - 5.5 - ns V = 300 V, I = 0.4 A, tr Rise time DD D - 5 - ns R = 4.7 Ω, V = 10 V G GS td(off) Turn-off delay time (see Figure 18) - 13 - ns tf Fall time - 28 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 0.8 A I (1) Source-drain current (pulsed) - 2.4 A SDM VSD(2) Forward on voltage VGS=0, ISD = 0.8 A - 1.6 V trr Reverse recovery time I = 0.8 A, - 135 ns SD Qrr Reverse recovery charge di/dt = 100 A/µs, - 216 nC V = 20 V IRRM Reverse recovery current DD - 3.2 A trr Reverse recovery time I = 0.8 A, - 140 ns SD Qrr Reverse recovery charge di/dt = 100 A/µs, - 224 nC V = 20V, Tj = 150 °C IRRM Reverse recovery current DD - 3.2 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 9. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V Gate-source breakdown voltage I = ± 1mA, I =0 30 - - V (BR)GSO GS D The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. DocID9509 Rev 14 5/18 18

Electrical characteristics STN1NK60Z, STQ1NK60ZR 2.1 Electrical characteristics (curves) Figure 2. S afe operating area for SOT-223 Figure 3. Thermal impedance for SOT-223 SOT-223 K δ=0.5 0.2 0.1 10-1 0.05 0.02 0.01 t < 30s Zthj-pcb=K*Rthj-pcb, Rthj-pcb=62.5°C/W Single pulse 10-2 10-3 10-2 10-1 100 101 102 tp(s) Figure 4 . Safe operating area for TO-92 Figure 5. Thermal impedance for TO-92 Figu r e 6. Output characteristics Figure 7. Transfer characteristics 6/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Electrical characteristics Figure 8. Transconductance Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs temperature temperature DocID9509 Rev 14 7/18 18

Electrical characteristics STN1NK60Z, STQ1NK60ZR Figure 14. Source-drain diode forward Figure 15. Normalized V vs temperature BR(DSS) characteristics BR(DSS) Figure 16. Maximum avalanche energy vs Figure 17. Max Id current vs Tc temperature 8/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID9509 Rev 14 9/18 18

Package mechanical data STN1NK60Z, STQ1NK60ZR 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Package mechanical data Figure 24. SOT-223 mechanical data drawing 0046067_N Table 10. SOT-223 mechanical data mm Dim. Min. Typ. Max. A 1.80 A1 0.02 0.10 B 0.60 0.70 0.85 B1 2.9 3.0 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 6.70 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.0 7.30 V 10° DocID9509 Rev 14 11/18 18

Package mechanical data STN1NK60Z, STQ1NK60ZR Figure 25. SOT-223 footprint (dimensions in mm) 0046067_N_footprint 12/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Package mechanical data 4.1 SOT-223, STN1NK60Z 4.2 TO-92 ammopack, STQ1NK60ZR-AP Figure 26. TO-92 ammopack mechanical data drawing T A1 T2 T1 H1 delta H H H3 H0 d L W2 l1 W W0 W1 F1 F2 F3 D0 t P2 P0 0050910S_Rev_U DocID9509 Rev 14 13/18 18

Package mechanical data STN1NK60Z, STQ1NK60ZR Table 11. TO-92 ammopack mechanical data mm Dim. Min. Typ. Max. A1 4.80 T 3.80 T1 1.60 T2 2.30 d 0.45 0.47 0.48 P0 12.50 12.70 12.90 P2 5.65 6.35 7.05 F1, F2 2.40 2.50 2.94 F3 4.98 5.08 5.48 delta H -2.00 2.00 W 17.50 18.00 19.00 W0 5.5 6.00 6.5 W1 8.50 9.00 9.25 W2 0.50 H 18.50 21 H3 0.5 1 2 H0 15.50 16.00 18.8 H1 25.0 27.0 D0 3.80 4.00 4.20 t 0.90 L 11.00 l1 3.00 delta P -1.00 1.00 14/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Packaging mechanical data 5 Packaging mechanical data Figure 27. Tape for SOT-223 (dimensions are in mm) *Cumulative tolerance of 10 sprocket holes is ±0.20 mm Figure 28. Reel for TO-223 (dimensions are in mm) DocID9509 Rev 14 15/18 18

Packaging mechanical data STN1NK60Z, STQ1NK60ZR Table 12. SOT-223 tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Typ. Max. Min. Max. A0 6.75 6.85 6.95 A 180 B0 7.30 7.40 7.50 N 60 K0 1.80 1.90 2.00 W1 12.4 F 5.40 5.50 5.60 W2 18.4 E 1.65 1.75 1.85 W3 11.9 15.4 W 11.7 12 12.3 P2 1.90 2 2.10 Base quantity pcs 1000 P0 3.90 4 4.10 Bulk quantity pcs 1000 P1 7.90 8 8.10 T 0.25 0.30 0.35 Dφ 1.50 1.55 1.60 D1φ 1.50 1.60 1.70 16/18 DocID9509 Rev 14

STN1NK60Z, STQ1NK60ZR Revision history 6 Revision history Table 13. Revision history Date Revision Changes 19-Mar-2003 3 First electronic version 15-May-2003 4 Removed DPAK 09-Jun-2003 5 Final datasheet 17-Nov-2004 6 Inserted SOT-223 15-Feb-2005 7 Modified Figure 4. 07-Sep-2005 8 Inserted ecopack indication 22-Feb-2006 9 The document has been reformatted 01-Jun-2007 10 Order code table on first page has been updated 19-Jul-2007 11 Table1: Device summary has been updated Corrected Figure2: Safe operating area for SOT-223 and Figure3: 05-Jan-2011 12 Thermal impedance for SOT-223 – Updated title. – Updated derating factor in Table2: Absolute maximum ratings. 05-Jun-2014 13 – Updated Section4: Package mechanical data. – Minor text changes. 04-Jul-2014 14 – Updated Section3: Test circuits. DocID9509 Rev 14 17/18 18

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