STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH™ IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGW40NC60V 600 V < 2.5 V 50 A ) s (cid:1) HIGH CURRENT CAPABILITY t( c (cid:1) HIGH FREQUENCY OPERATION UP TO u 50 KHz d (cid:1) LOSSES INCLUDE DIODE RECOVERY o3 ENERGY P r2 1 (cid:1) OFF LOSSES INCLUDE TAIL CURRENT TOe- 247 (cid:1) LOWER CRES / CIES RATIO t e (cid:1) NEW GENERATION PRODUCTS WITH l TIGHTER PARAMETER DISTRUBUTION Weight: 4.41ogr ± 0.01 s Max Clibp Pressure: 150 N/mm2 DESCRIPTION O Using the latest high voltage technology based on -F igure 2: Internal Schematic Diagram a patented strip layout, STMicroelectronics has ) designed an advanced family of IGBTs, the Pows- erMESH™ IGBTs, with outstanding performanc(es. t The suffix “V” identifies a family optimized fcor high u frequency. d o r P APPLICATIONS (cid:1) HIGH FREQUENCY eIN VERTERS (cid:1) SMPS and PFC eINt BOTH HARD SWITCH AND RESONANT lTOPOLOGIES o (cid:1) UPS s (cid:1) MOTObR DRIVERS O Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGW40NC60V GW40NC60V TO-247 TUBE Rev. 10 July 2004 1/10

STGW40NC60V Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C (#) 80 A IC Collector Current (continuous) at 100°C (#) 50 A ICM (1) Collector Current (pulsed) 200 A PTOT Total Dissipation at TC = 25°C 260 W Derating Factor 2.08 W/°C ) s Tstg Storage Temperature t( – 55 to 150 c°C Tj Operating Junction Temperature u (1)Pulse width limited by max. junction temperature. d o r Table 4: Thermal Data P e Min. Typ. Max. Unit t e Rthj-case Thermal Resistance Junction-case 0.48 °C/W l o Rthj-amb Thermal Resistance Junction-ambient 50 °C/W s TL Maximum Lead Temperature for Soldering Purpose b 300 °C (1.6 mm from case, for 10 sec.) O ELECTRICAL CHARACTERISTICS (TCASE =25°C UN-L ESS OTHERWISE SPECIFIED) Table 5: Off ) s Symbol Parameter (Test Conditions Min. Typ. Max. Unit t c VBR(CES) Collectro-Emitter Breakdown uIC = 1 mA, VGE = 0 600 V Voltage d ICES Collector-Emitter Leakaoge VGE = Max Rating Current (VCE = 0)P r Tc=25°C 10 µA Tc=125°C 1 mA e IGES Gate-Emtitter Leakage VGE = ± 20 V , VCE = 0 ± 100 nA Currenet (VCE = 0) l o Table 6: Ons b SyOmbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250 µA 3.75 5.75 V VCE(SAT) Collector-Emitter Saturation VGE= 15 V, IC= 40A, Tj= 25°C 1.9 2.5 V Voltage VGE= 15 V, IC= 40A, 1.7 V Tj= 125°C (#) Calculated according to the iterative formula: T –T I (T ) = ------------------------------------J---M------A-----X--------------C---------------------------------- C C RTHJ–C×VCESAT(MAX)(TC,IC) 2/10

STGW40NC60V ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance VCE = 15 V, IC= 20 A 20 S Cies Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 4550 pF Coes Output Capacitance 350 pF Cres Reverse Transfer 105 pF Capacitance Qg Total Gate Charge VCE = 390 V, IC = 40 A, 214 nC Qge Gate-Emitter Charge VGE = 15V, 30 nC Qgc Gate-Collector Charge (see Figure 20) 96 nC ICL Turn-Off SOA Minimum Vclamp = 480 V , Tj = 150°C 200 A s ) Current RG = 100 Ω, VGE= 15V t( c Table 8: Switching On u Symbol Parameter Test Conditions Min. Typ. Mdax. Unit o td(on) Turn-on Delay Time VCC = 390 V, IC = 40 A 43r ns tr Current Rise Time RG=3.3Ω, VGE= 15V, Tj= 25°C 1P7 ns (di/dt)on Turn-on Current Slope (see Figure 18) e 2060 A/µs Eon (2) Turn-on Switching Losses t 330 450 µJ e td(on) Turn-on Delay Time VCC = 390 V, IC = 40 A ol 42 ns tr Current Rise Time RG=3.3Ω, VGE= 15V, Tj= s 19 ns (di/dt)on Turn-on Current Slope 125°C b 1900 A/µs Eon (2) Turn-on Switching Losses (see Figure 18) O 640 µJ 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at th e -same temperature (25°C and 125°C) Table 9: Switching Off ) s ( Symbol Parameter t Test Conditions Min. Typ. Max. Unit c tr(Voff) Off Voltage Rise Time u Vcc = 390 V, IC = 40 A, 25 ns td(off) Turn-off Delay Time o d RTJG =E =25 3 °.3C Ω , VGE = 15 V 140 ns tf Current Fall TimeP r (see Figure 18) 45 ns Eoff (3) Turn-off Sweit ching Loss 720 970 µJ Ets Total Sewtitching Loss 1050 1420 µJ tr(Voff) Ooflf Voltage Rise Time Vcc = 390 V, IC = 40 A, 60 ns td(off)b s Turn-off Delay Time RTjG =E 1=2 35. 3°C Ω , VGE = 15 V 170 ns Otf Current Fall Time (see Figure 18) 77 ns Eoff (3) Turn-off Switching Loss 1400 µJ Ets Total Switching Loss 2040 µJ (3)Turn-off losses include also the tail of the collector current. 3/10

STGW40NC60V Figure 3: Output Characteristics Figure 6: Transfer Characteristics ) s ( t c u d o r Figure 4: Transconductance Figure 7: Collector-EmitterP On Voltage vs Tem- perature e t e l o s b O - ) s ( t c u d o r P e t Figure 5: Collectoer-Emitter On Voltage vs Col- Figure 8: Normalized Gate Threshold vs Tem- lector Currentol perature s b O 4/10

STGW40NC60V Figure 9: Normalized Breakdown Voltage vs Figure 12: Gate Charge vs Gate-Emitter Volt- Temperature age ) s ( t c u d o r Figure 10: Capacitance Variations Figure 13: Total SwitchingP Losses vs Temper- ature e t e l o s b O - ) s ( t c u d o r P e t Figure 11: Total Sewitching Losses vs Gate Re- Figure 14: Total Switching Losses vs Collector sistance ol Current s b O 5/10

STGW40NC60V Figure 15: Thermal Impedance Figure 17: Ic vs Frequency ) s ( t c u d o r Figure 16: Turn-Off SOA For a fast IGBT suitable for Phigh frequency appli- cations, the typical collec tor current vs. maximum e operating frequency curve is reported. That fre- t quency is defined aes follows: l fo = (P - P ) / (E + E ) MAX D C ON OFF s 1) The maximum power dissipation is limited by b maximum junction to case thermal resistance: O PD = ∆T / RTHJ-C - ) considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C s 2) The conduction losses are: ( ct PC = IC * VCE(SAT) * δ u with 50% of duty cycle, VCESAT typical value d @125°C. o r 3) Power dissipation during ON & OFF commuta- P tions is due to the switching frequency: e PSW = (EON + EOFF) * freq. e t 4) Typical values @ 125°C for switching losses are ol used (test conditions: VCE = 390V, VGE = 15V, s RG = 3.3 Ohm). Furthermore, diode recovery en- b ergy is included in the EON (see note 2), while the O tail of the collector current is included in the EOFF measurements (see note 3). 6/10

STGW40NC60V Figure 18: Test Circuit for Inductive Load Figure 20: Gate Charge Test Circuit Switching ) s ( t c u d o r P Figure 19: Switching Waveforms e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 7/10

STGW40NC60V TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 ) s b1 2.0 2.40 0.079 0.094 ( t b2 3.0 3.40 0.118 0.134 c u c 0.40 0.80 0.015 0.03 d D 19.85 20.15 0.781 0.793 o E 15.45 15.75 0.608 r0.620 P e 5.45 0.214 L 14.20 14.80 0.560 e 0.582 L1 3.70 4.30 0.14 t 0.17 e L2 18.50 l 0.728 o øP 3.55 3.65 0.140 0.143 s øR 4.50 5.50 0b.177 0.216 S 5.50 O 0.216 - ) s ( t c u d o r P e t e l o s b O 8/10

STGW40NC60V Table 10: Revision History Date Revision Description of Changes 13-Jul-2004 9 Stylesheet update. No content change 14-Jul-2004 10 Some datas have been updated ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 9/10

STGW40NC60V ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 10/10