STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed - Datasheet production data Features TAB TAB • Maximum junction temperature: T = 175 °C J • Tail-less switching off 1 3 1 23 • VCE(sat) = 1.85 V (typ.) @ IC = 30 A D²PAK TO-220 • Tight parameters distribution TAB • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode 3 3 2 2 1 1 TO-247 TO-3P Applications • Photovoltaic inverters Figure 1. Internal schematic diagram • Uninterruptible power supply C (2, TAB) • Welding • Power factor correction • Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to E (3) maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order codes Marking Package Packaging STGB30V60DF GB30V60DF D²PAK Tape and reel STGP30V60DF GP30V60DF TO-220 Tube STGW30V60DF GW30V60DF TO-247 Tube STGWT30V60DF GWT30V60DF TO-3P Tube October 2013 DocID024361 Rev 4 1/22 This is information on a product in full production. www.st.com 22

Electrical ratings STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE I Continuous collector current at T = 25 °C 60 A C C I Continuous collector current at T = 100 °C 30 A C C I (1) Pulsed collector current 120 A CP V Gate-emitter voltage ±20 V GE I Continuous forward current at T = 25 °C 60 A F C I Continuous forward current at T = 100 °C 30 A F C I (1) Pulsed forward current 120 A FP P Total dissipation at T = 25 °C 258 W TOT C T Storage temperature range - 55 to 150 °C STG T Operating junction temperature - 55 to 175 °C J 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.58 °C/W thJC R Thermal resistance junction-case diode 2.08 °C/W thJC R Thermal resistance junction-ambient 50 °C/W thJA 2/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics 2 Electrical characteristics T = 25 °C unless otherwise specified. J Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V breakdown voltage I = 2 mA 600 V (BR)CES C (V = 0) GE V = 15 V, I = 30 A 1.85 2.3 GE C V = 15 V, I = 30 A Collector-emitter saturation GE C 2.15 VCE(sat) voltage TJ = 125 °C V V = 15 V, I = 30 A GE C 2.35 T = 175 °C J I = 30 A 2 2.6 V F V Forward on-voltage I = 30 A, T = 125 °C 1.7 V F F J I = 30 A, T = 175 °C 1.6 V F J V Gate threshold voltage V = V , I = 1 mA 5 6 7 V GE(th) CE GE C Collector cut-off current I V = 600 V 25 μA CES (V = 0) CE GE Gate-emitter leakage I V = ± 20 V 250 nA GES current (V = 0) GE CE Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 3750 - pF ies C Output capacitance V = 25 V, f = 1 MHz, - 120 - pF oes CE V = 0 Reverse transfer GE C - 77 - pF res capacitance Q Total gate charge - 163 - nC g V = 480 V, I = 30 A, Q Gate-emitter charge CC C - 28 - nC ge V = 15 V, see Figure29 GE Q Gate-collector charge - 72 - nC gc DocID024361 Rev 4 3/22

Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time - 45 - ns d(on) t Current rise time - 16 - ns r (di/dt) Turn-on current slope - 1500 - A/μs on V = 400 V, I = 30 A, t ( ) Turn-off delay time CE C - 189 - ns doff R = 10 Ω, V = 15 V, G GE t Current fall time - 19 - ns f see Figure28 E (1) Turn-on switching losses - 383 - μJ on E (2) Turn-off switching losses - 233 - μJ off E Total switching losses - 616 - μJ ts t Turn-on delay time - 42 - ns d(on) t Current rise time - 17 - ns r (di/dt) Turn-on current slope - 1337 - A/μs on V = 400 V, I = 30 A, t ( ) Turn-off delay time CE C - 193 - ns doff R = 10 Ω, V = 15 V, G GE t Current fall time - 32 - ns f TJ = 175 °C, see Figure28 E (1) Turn-on switching losses - 794 - μJ on E (2) Turn-off switching losses - 378 - μJ off E Total switching losses - 1172 - μJ ts 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t Reverse recovery time - 53 - ns rr Q Reverse recovery charge - 384 - nC rr I = 30 A, V = 400 V, F R I Reverse recovery current di/dt=1000 A/μs, - 14.5 - A rrm V = 15 V, GE Peak rate of fall of reverse dIrr/ /dt recovery current during t (see Figure28) - 788 - A/μs b E Reverse recovery energy - 104 - μJ rr t Reverse recovery time - 104 - ns rr Q Reverse recovery charge - 1352 - nC rr I = 30 A, V = 400 V, F R I Reverse recovery current di/dt=1000 A/μs, - 26 - A rrm V = 15 V, Peak rate of fall of reverse GE dI /dt T = 175 °C, (see Figure28) - 310 - A/μs rr/ recovery current during t J b E Reverse recovery energy - 407 - μJ rr 4/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case Figure 3. Collector current vs. case temperature temperature AM17409v1 AM17410v1 Ptot IC(A) (W) 60 250 50 200 40 150 30 100 20 50 10 0 0 0 25 50 75 100 125 150 175 TC(°C) 0 25 50 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (T =25°C) Figure 5. Output characteristics (T =175°C) J J AM17411v1 AM17412v1 IC(A) IC(A) 120 VGE=15V 13V 120 VGE=15V 100 11V 100 13V 80 80 11V 60 60 9V 9V 40 40 20 20 7V 0 0 0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE(V) Figure 6. V vs. junction temperature Figure 7. V vs. collector current CE(sat) CE(sat) AM17413v1 AM17414v1 VCE(sat)(V) VCE(sat)(V) 3.2 VGE=15V IC=60A 3.2 VGE=15V Tj=175°C 3.0 3.0 2.8 2.8 2.6 2.6 2.4 Tj=25°C 2.4 IC=30A 2.2 2.2 2.0 2.0 1.8 Tj=-40°C 1.6 1.8 IC=15A 1.4 1.6 1.2 1.4 1.0 1.2 0.8 -50 0 50 100 150 TC(°C) 0 10 20 30 40 50 60 IC(A) DocID024361 Rev 4 5/22

Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 8. Collector current vs. switching Figure 9. Forward bias safe operating area frequency AM17415v1 AM17416v1 IC(A) IC(A) 80 TC=80°C 100 70 60 TC=100°C 10μs 10 50 100μs 40 1ms 1 30 Single pulse, Tc=25°C 20 0.1 Tj<175°C, VGE=15V rectangular current shape, 10 (duty cycle=0.5, Vcc= 400V Rg=10Ω, Vge=0/15V, Tj=175°C) 0 0.01 1 10 f(kHz) 1 10 100 VCE(V) Figure 10. Transfer characteristics Figure 11. Diode V vs. forward current F IC(A) AM17417v1 VF(A) AM17418v1 Tj=-40°C Tj=-40°C 100 Tj=175°C 2.3 Tj=25°C 80 Tj=25°C 60 1.9 Tj=175°C 40 1.5 20 0 1.1 7 8 9 10 11 VGE(V) 10 20 30 40 50 60 IF(A) Figure 12. Normalized V vs junction Figure 13. Normalized V vs. junction GE(th) (BR)CES temperature temperature AM17419v1 AM17420v1 VGE(th) V(BR)CES (norm) (norm) IC=2mA VCE=VGE IC=1mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 0.9 -50 0 50 100 150 TC(°C) -50 0 50 100 150 TC(°C) 6/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage AM17421v1 AM17422v1 C(pF) VGE(V) 10000 16 Cies 14 12 1000 10 8 Coes 6 100 Cres 4 2 10 0 0.1 1 10 VCE(V) 0 25 50 75 100 125 150 175 Qg(nC) Figure 16. Switching losses vs. collector Figure 17. Switching losses vs. gate resistance current AM17423v1 AM17424v1 E(μJ) E(μJ) 2000 VRCgC==1400Ω0V,,TjV=G1E7=51°5CV Eon 1200 VICCC==3400A0,VT,jV=1G7E=51°C5V Eon 1800 1600 1000 1400 1200 800 1000 Eoff Eoff 800 600 600 400 400 200 0 200 0 10 20 30 40 50 60 IC(A) 0 10 20 30 40 Rg(Ω) Figure 18. Switching losses vs. junction Figure 19. Switching losses vs. collector temperature emitter voltage AM17425v1 AM17426v1 E(μJ) E(μJ) Eon VCC=400V,VGE=15V Eon 1100 VGE=15V,Tj=175°C 800 IC=30A,Rg=10Ω IC=30A, Rg=10Ω 700 900 600 700 500 Eoff 400 500 Eoff 300 300 200 100 100 0 25 50 75 100 125 150 TJ(°C) 150 200 250 300 350 400 450 VCE(V) DocID024361 Rev 4 7/22

Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance AM17427v1 AM17428v1 t(ns) t(ns) VCC=400V,VGE=15V Tj=175°C,Rg=10Ω 1000 VCC=400V,VGE=15V tdoff Tj=175°C, IC=30A tdoff 100 100 tdon tdon tr tr tf tf 10 10 0 10 20 30 40 50 60 IC(A) 0 10 20 30 40 Rg(Ω) Figure 22. Reverse recovery current vs. diode Figure 23. Reverse recovery time vs. diode current slope current slope AM17429v1 AM17430v1 Irm(A) trr(μs) Vr=400V Tj=175°C 40 IF=30A Vr=400V 200 IF=30A 30 Tj=25°C 150 20 100 Tj=175°C 10 50 Tj=25°C 0 0 0 500 1000 1500 di/dt (A/μs) 0 500 1000 1500 2000 2500 di/dt (A/μs) Figure 24. Reverse recovery charge vs. diode Figure 25. Reverse recovery energy vs. diode current slope current slope AM17431v1 AM17432v1 Qrr(nC) Err(μJ) Vr=400V Tj=175°C Vr=400V Tj=175°C IF=30A IF=30A 1000 2000 800 1500 600 Tj=25°C 1000 400 500 Tj=25°C 200 0 0 0 500 1000 1500 2000 2500 di/dt (A/μs) 0 500 1000 1500 2000 2500 di/dt (A/μs) 8/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics Figure 26. Thermal data for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 10-1 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t 10-2 10-5 10-4 10-3 10-2 10-1 tp(s) Figure 27. Thermal data for diode DocID024361 Rev 4 9/22

Test circuits STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 3 Test circuits Figure 28. Test circuit for inductive load Figure 29. Gate charge test circuit switching AM01504v1 AM01505v1 Figure 30. Switching waveform Figure 31. Diode recovery time waveform 90% di/dt Qrr VG 10% IF trr 90% ta tb VCE 10% TcrTor(sVsoff) t 90% IRRM IRRM IC TdT(oonn) Tr(Ion) Td(oTofff)f Tf 10% VF dv/dt AM01506v1 AM01507v1 10/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° DocID024361 Rev 4 11/22

Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 32. D²PAK (TO-263) drawing 0079457_T Figure 33. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters 12/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 DocID024361 Rev 4 13/22

Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 34. TO-220 type A drawing 0015988_typeA_Rev_S 14/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data Table 10. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 DocID024361 Rev 4 15/22

Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 35. TO-247 drawing 0075325_G 16/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data Table 11. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.90 E 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 18.40 18.60 øP 3.10 3.30 Q 5 Q1 3.80 DocID024361 Rev 4 17/22

Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 36. TO-3P drawing 8045950_A 18/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Packaging mechanical data 5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024361 Rev 4 19/22

Packaging mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 37. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 38. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 20/22 DocID024361 Rev 4

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Revision history 6 Revision history Table 13. Document revision history Date Revision Changes 14-Mar-2013 1 Initial release. 03-May-2013 2 Added: Section2.1: Electrical characteristics (curves) Added minimum and maximum values for V inTable4: Static 04-Jun-2013 3 GE(th) characteristics. 08-Oct-2013 4 Updated title, features and description in cover page. DocID024361 Rev 4 21/22

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