STB8N65M5, STD8N65M5, STF8N65M5, STI8N65M5, STP8N65M5, STU8N65M5 Ω N-channel 650 V, 0.56 typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages Datasheet — production data Features TAB TAB V @ R Type TDSS mDSa(xo.n) ID PTOT 3 Jmax 1 3 3 STB8N65M5 70 W 12 DPAK 12 STD8N65M5 70 W TO-220FP TO-220 STF8N65M5 25 W 710 V < 0.6 Ω 7 A STI8N65M5 70 W TAB STP8N65M5 70 W TAB TAB STU8N65M5 70 W 3 3 ■ Worldwide best RDS(on) * area 123 1 12 D²PAK ■ Higher VDSS rating I²PAK IPAK ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive Figure 1. Internal schematic diagram ■ 100% avalanche tested Applications (cid:36)(cid:8)(cid:18)(cid:12)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) ■ Switching applications Description (cid:39)(cid:8)(cid:17)(cid:9) These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is (cid:51)(cid:8)(cid:19)(cid:9) combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) resistance, which is unmatched among silicon- based Power MOSFETs, making it especially Table 1. Device summary suitable for applications which require superior Order codes Marking Package Packaging power density and outstanding efficiency. STB8N65M5 D²PAK Tape and reel STD8N65M5 DPAK Tape and reel STF8N65M5 TO-220FP Tube 8N65M5 STI8N65M5 I²PAK Tube STP8N65M5 TO-220 Tube STU8N65M5 IPAK Tube October 2012 Doc ID 16531 Rev 5 1/26 This is information on a product in full production. www.st.com 26

Contents STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 2/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Value Symbol Parameter TO-220 Unit IPAK D²PAK TO-220FP DPAK, I²PAK V Gate- source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 7 7 (1) A D C I Drain current (continuous) at T = 100 °C 4.4 4.4 (1) A D C I (2) Drain current (pulsed) 28 28 (1) A DM P Total dissipation at T = 25 °C 70 25 W TOT C Max current during repetitive or single pulse I 2 A AR avalanche (pulse width limited by T ) JMAX Single pulse avalanche energy E 120 mJ AS (starting T = 25°C, I = I , V = 50V) j D AR DD dv/dt (3) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature -55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area. 3. I ≤ 7 A, di/dt ≤ 400 A/µs, V ≤ 400 V, V < V . SD DD DS(peak) (BR)DSS T able 3. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220 I²PAK D²PAK TO-220FP Thermal resistance R 1.79 5 °C/W thj-case junction-case max Thermal resistance R 100 62.5 62.5 °C/W thj-amb junction-ambient max Thermal resistance R (1) 50 30 °C/W thj-pcb junction-pcb max 1. When mounted on 1 inch² FR-4 board, 2oz Cu. Doc ID 16531 Rev 5 3/26

Electrical characteristics STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 650 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 650 V 1 µA I DS DSS drain current (V = 0) V = 650 V, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source on- R V = 10 V, I = 3.5 A 0.56 0.60 Ω DS(on resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 690 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 18 - pF Coss Reverse transfer VGS = 0 2 pF rss capacitance Equivalent output C (1) capacitance energy V = 0, V = 0 to 520 V - 17 - pF o(er) GS DS related Equivalent output C (2) capacitance time V = 0, V = 0 to 520 V - 52 - pF o(tr) GS DS related Intrinsic gate R f = 1 MHz open drain 2 4 6 Ω G resistance Q Total gate charge V = 520 V, I = 3.5 A, 15 nC g DD D Q Gate-source charge V = 10 V - 3.6 - nC gs GS Q Gate-drain charge (see Figure19) 6 nC gd 1. C is a constant capacitance value that gives the same stored energy as C while V is rising from 0 o(er) oss DS to 80% V DSS 2. C is a constant capacitance value that gives the same charging time as C while V is rising from 0 o(tr) oss DS to 80% V DSS 4/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(off) Turn-off delay time VDD = 400 V, ID = 4A, 50 ns tr(V) Rise time RG = 4.7 Ω, VGS = 10 V - 14 - ns tc(off) Cross time (see Figure20) 20 ns t Fall time (see Figure23) 11 ns f(i) Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 7 A SD - I (1) Source-drain current (pulsed) 28 A SDM V (2) Forward on voltage I = 7 A, V = 0 - 1.5 V SD SD GS trr Reverse recovery time ISD = 7 A, di/dt = 100 A/µs 200 ns Qrr Reverse recovery charge VDD = 100 V - 1.6 µC I Reverse recovery current (see Figure20) 16 A RRM t Reverse recovery time I = 7 A, di/dt = 100 A/µs 263 ns rr SD Q Reverse recovery charge V = 100 V, T = 150 °C - 1.9 µC rr DD j I Reverse recovery current (see Figure20) 15 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 16531 Rev 5 5/26

Electrical characteristics STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, I²PAK, D²PAK I²PAK, D²PAK ID AM08194v1 (A) 101 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 1110m00µsµss Li 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK ID AM08195v1 (A) 101 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 1110m00µsµss Li 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP ID AM08196v1 (A) 10 1 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11000µµss Li 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) 6/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM08197v1 AM08198v1 ID(A) ID(A) 12 VGS=10V 7.5V 12 7V VDS=20V 10 10 6.5V 8 8 6 6 6V 4 4 2 2 5.5V 0 5V 0 0 5 10 15 VDS(V) 3 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance VGS AMV03D1S95v1 RDS(on) AM08200v1 (V) (V) (Ohm) 12 VDS VIDDD==35.52A0V VGS 500 VGS=10V 0.58 10 400 0.56 8 300 6 0.54 200 4 0.52 100 2 0 0 0.50 0 5 10 15 Qg(nC) 0 2 4 6 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM08202v1 Eoss AM08201v1 (pF) (µJ) 3.5 1000 3.0 Ciss 2.5 100 2.0 1.5 Coss 10 1.0 Crss 0.5 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Doc ID 16531 Rev 5 7/26

Electrical characteristics STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature VGS(th) AM08204v1 RDS(on) AM08205v1 (norm) (norm) 1.10 ID=250 µA VGS=10V ID=3.5A 2.0 1.00 1.5 0.90 1.0 0.80 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Switching losses vs gate resistance Figure 17. Normalized B vs temperature VDSS (1) E AM08206v1 VDS AM10399v1 (μJ) (norm) ID=4A 1.08 VCL=400V Eoff ID = 1mA VGS=10V 1.06 100 1.04 Eon 1.02 1.00 10 0.98 0.96 0.94 1 0.92 0 10 20 30 40 RG(Ω) -50 -25 0 25 50 75 100 TJ(°C) 1. Eon including reverse recovery of a SiC diode 8/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay--ooffff IDM Vgs 90%Vgs oonn ID Vgs(I(t)))) VDD VDD 10%Vds 10%Id Vds TTrriissee TTffaallll AM01472v1 Tcross--over AM05540v2 Doc ID 16531 Rev 5 9/26

Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Doc ID 16531 Rev 5 11/26

Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Figure 24. D²PAK (TO-263) drawing 0079457_T Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters 12/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Doc ID 16531 Rev 5 13/26

Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Figure 26. DPAK (TO-252) drawing 0068772_I Figure 27. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 b. All dimensions are in millimeters. 14/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 16531 Rev 5 15/26

Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Figure 28. TO-220FP drawing 7012510_Rev_K_B 16/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical Table 11. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 29. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 16531 Rev 5 17/26

Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Table 12. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 18/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical Figure 30. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 16531 Rev 5 19/26

Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Table 13. IPAK (TO-251) mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° 20/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Package mechanical Figure 31. IPAK (TO-251) drawing 0068771_J Doc ID 16531 Rev 5 21/26

Packaging mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 5 Packaging mechanical data Table 14. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 22/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Packaging mechanical Table 15. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 16531 Rev 5 23/26

Packaging mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Figure 32. Tape for DPAK and D²PAK 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 33. Reel for DPAK and D²PAK T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 24/26 Doc ID 16531 Rev 5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Revision history 6 Revision history T able 16. Document revision history Date Revision Changes 23-Oct-2009 1 First release 14-Oct-2010 2 Document status promoted from preliminary data to datasheet. 05-Jul-2011 3 Table7: Source drain diode has been updated. – Updated: Figure1, 10, 14 and 17. – Updated: note1 and 3 below the Table2 04-Oct-2012 4 – Updated the entire Section4: Package mechanical data. – Updated title and description on the cover page. 29-Oct-2012 5 – Updated R values in Table5. G Doc ID 16531 Rev 5 25/26

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 26/26 Doc ID 16531 Rev 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STI8N65M5 STU8N65M5 STB8N65M5 STD8N65M5 STP8N65M5 STF8N65M5