STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, STW30N65M5 Ω N-channel 650 V, 0.125 , 22 A, MDmesh™ V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features V @ Order codes DSS R max. I TJMAX DS(on) D 3 STB30N65M5 710 V < 0.139 Ω 22 A 1 23 123 STF30N65M5 710 V < 0.139 Ω 22 A(1) D²PAK TO-220FP1 I²PAK STI30N65M5 710 V < 0.139 Ω 22 A STP30N65M5 710 V < 0.139 Ω 22 A STW30N65M5 710 V < 0.139 Ω 22 A 1. Limited only by maximum temperature allowed 3 3 2 2 ■ Worldwide best R *area 1 1 DS(on) TO-220 TO-247 ■ Higher V rating DSS ■ Excellent switching performance ■ Easy to drive Figure 1. Internal schematic diagram ■ 100% avalanche tested ■ High dv/dt capability (cid:36)(cid:8)(cid:18)(cid:9) Applications ■ Switching applications (cid:39)(cid:8)(cid:17)(cid:9) Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative (cid:51)(cid:8)(cid:19)(cid:9) proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB30N65M5 30N65M5 D²PAK Tape and reel STF30N65M5 30N65M5 TO-220FP Tube STI30N65M5 30N65M5 I²PAK Tube STP30N65M5 30N65M5 TO-220 Tube STW30N65M5 30N65M5 TO-247 Tube September 2011 Doc ID 15331 Rev 3 1/22 www.st.com 22

Contents STB/F/I/P/W30N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, D²PAK TO-220FP TO-247, I²PAK V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 22 22 (1) A D C I Drain current (continuous) at T = 100 °C 13 13(1) A D C I (2) Drain current (pulsed) 88 88 (1) A DM P Total dissipation at T = 25 °C 140 30 W TOT C Max current during repetitive or single pulse I 7 A AR avalanche (pulse width limited by T ) JMAX Single pulse avalanche energy E 500 mJ AS (starting T = 25°C, I = I , V = 50V) j D AR DD dv/dt (3) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t=1 s;T =25 °C) C T Storage temperature - 55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I ≤ 21 A, di/dt = 400 A/µs, V < V SD Peak (BR)DSS T able 3. Thermal data Value Symbol Parameter Unit D²PAK TO-220FP I²PAK TO-220 TO-247 Thermal resistance junction- R 0.83 3.6 0.83 °C/W thj-case case max Thermal resistance junction- R 62.5 50 °C/W thj-amb ambient max Thermal resistance junction-pcb R 30 °C/W thj-pcb max Maximum lead temperature for T 300 °C l soldering purpose Doc ID 15331 Rev 3 3/22

Electrical characteristics STB/F/I/P/W30N65M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V breakdown voltage I = 1 mA 650 V (BR)DSS D (V = 0) GS Zero gate voltage V = 650 V 1 µA I DS DSS drain current (V = 0) V = 650 V, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 11 A 0.125 0.139 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 2880 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 68 - pF Coss Reverse transfer VGS = 0 5 pF rss capacitance Equivalent C (1) capacitance time V = 0, V = 0 to 520 V - 190 - pF o(tr) GS DS related Equivalent C (2) capacitance energy V = 0, V = 0 to 520 V - 65 - pF o(er) GS DS related Intrinsic gate R f = 1 MHz open drain - 1.6 - Ω G resistance Q Total gate charge V = 520 V, I = 11 A, 64 nC g DD D Q Gate-source charge V = 10 V - 16 - nC gs GS Q Gate-drain charge (see Figure20) 25 nC gd 1. C time related is defined as a constant equivalent capacitance giving the same charging time as C oss eq. oss when V increases from 0 to 80% V DS DSS 2. C energy related is defined as a constant equivalent capacitance giving the same stored energy as oss eq. C when V increases from 0 to 80% V oss DS DSS 4/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t Turn-off delay time 50 ns d(off) V = 400 V, I = 14 A, t Rise time DD D 8 ns r R = 4.7 Ω, V = 10 V - - t Cross time G GS 20 ns c (see Figure21) t Fall time 10 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 22 A SD - I (1) Source-drain current (pulsed) 88 A SDM V (2) Forward on voltage I = 22 A, V = 0 - 1.5 V SD SD GS t Reverse recovery time 336 ns rr I = 22 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 6 µC rr V = 60 V (see Figure21) I Reverse recovery current DD 32 A RRM t Reverse recovery time I = 22 A, di/dt = 100 A/µs 395 ns rr SD Q Reverse recovery charge V = 60 V, T = 150 °C - 7 µC rr DD j I Reverse recovery current (see Figure21) 34 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15331 Rev 3 5/22

Electrical characteristics STB/F/I/P/W30N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, D²PAK, I²PAK D²PAK, I²PAK ID AM05462v1 (A) 10 Operatimiotne idn tbyh is maarx eaR iDsS(on) 11000µµss Li 1ms 1 10ms Tj=150°C Tc=25°C Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID AM05463v1 (A) 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11000µµss Li 1 1ms 10ms Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM05464v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11000µµss 1 Li 1ms Tj=150°C 10ms 0.1 Tc=25°C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) 6/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID AM05465v1 ID AM05466v1 (A) VGS=10V (A) VDS=15V 45 45 7V 40 40 35 35 30 30 25 25 20 20 6V 15 15 10 10 5 5 5V 0 0 0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 10VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance VGS AM05471v1 RDS(on) AM05468v1 (V) VDS (Ω) VDD=520V VGS 12 480 0.14 ID=11A 10 400 0.13 8 320 0.12 6 240 0.11 4 160 0.10 2 80 0.09 0 0 0.08 0 10 20 30 40 50 60 70 Qg(nC) 0 5 10 15 20 25 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM05469v1 Eoss AM05470v1 (pF) (µJ) 12 10000 10 Ciss 1000 8 6 100 Coss 4 10 2 Crss 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Doc ID 15331 Rev 3 7/22

Electrical characteristics STB/F/I/P/W30N65M5 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) AM05473v1 RDS(on) AM05474v1 (norm) (norm) 1.10 2.1 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward Figure 17. Normalized B vs temperature VDSS characteristics VSD AM05475v1 BVDSS AM05467v1 (V) TJ=-50°C (norm) 1.07 1.2 1.05 1.0 1.03 0.8 TJ=25°C 1.01 0.6 0.99 TJ=150°C 0.4 0.97 0.2 0.95 0 0.93 0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 125 TJ(°C) Figure 18. Switching losses vs gate resistance (1) E AM05472v1 (μJ) Eon ID=14A 300 VCL=400V VGS=10V 250 Eoff 200 150 100 50 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay--ooffff IDM Vgs 90%Vgs oonn ID Vgs(I(t)))) VDD VDD 10%Vds 10%Id Vds TTrriissee TTffaallll AM01472v1 Tcross--over AM05540v2 Doc ID 15331 Rev 3 9/22

Package mechanical data STB/F/I/P/W30N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACKm is an ST trademark. 10/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Package mechanical data Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Doc ID 15331 Rev 3 11/22

Package mechanical data STB/F/I/P/W30N65M5 Figure 25. D²PAK (TO-263) drawing 0079457_S Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters 12/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 27. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_K Doc ID 15331 Rev 3 13/22

Package mechanical data STB/F/I/P/W30N65M5 Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 28. I²PAK (TO-262) drawing 0004982_Rev_H 14/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Doc ID 15331 Rev 3 15/22

Package mechanical data STB/F/I/P/W30N65M5 Figure 29. TO-220 type A drawing 0015988_typeA_Rev_S 16/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Package mechanical data Table 12. TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 15331 Rev 3 17/22

Package mechanical data STB/F/I/P/W30N65M5 Figure 30. TO-247 drawing 0075325_F 18/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Packaging mechanical data 5 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 15331 Rev 3 19/22

Packaging mechanical data STB/F/I/P/W30N65M5 Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 20/22 Doc ID 15331 Rev 3

STB/F/I/P/W30N65M5 Revision history 6 Revision history T able 14. Document revision history Date Revision Changes 16-Jan-2009 1 First release 21-Sep-2009 2 Document status promoted from preliminary data to datasheet. C C values changed in Table5: Dynamic o(er) and o(tr) Table6: Switching timesparameters updates Figure24: Switching time waveformhas been corrected Minor text changes Section4: Package mechanical data has been modified. Added: – Table8: D²PAK (TO-263) mechanical data, Figure25: D²PAK (TO- 263) drawingand Figure26: D²PAK footprint; – Table9: TO-220FP mechanical data,and Figure27: TO-220FP drawing; 22-Sep-2011 3 – Table10: I²PAK (TO-262) mechanical data,and Figure28: I²PAK (TO-262) drawing; – Table11: TO-220 type A mechanical data,and Figure29: TO-220 type A drawing; – Table12: TO-247 mechanical data,and Figure30: TO-247 drawing; Section5: Packaging mechanical datahas been modified. Added: – Table13: D²PAK (TO-263) tape and reel mechanical data, Figure31: Tape and Figure32: Reel; Doc ID 15331 Rev 3 21/22

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