STF17N62K3 STP17N62K3, STW17N62K3 Ω N-channel 620 V, 0.28 , 15.5 A, TO-220FP, TO-220, TO-247 SuperMESH3™ Power MOSFET Features R Order codes V DS(on) I Pw DSS max. D STF17N62K3 620 V < 0.34 Ω 15.5 A 40 W 2 3 1 23 1 TO-247 TO-220 STP17N62K3 620 V < 0.34 Ω 15.5 A 190 W STW17N62K3 620 V < 0.34 Ω 15.5 A 190 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized 3 ■ Very low intrinsic capacitance TO-220FP 1 2 ■ Improved diode reverse recovery characteristics ■ Zener-protected Figure 1. Internal schematic diagram D(2) Applications ■ Switching applications Description G(1) This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and S(3) high avalanche capability, rendering it suitable for AM01476v1 the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STF17N62K3 17N62K3 TO-220FP Tube STP17N62K3 17N62K3 TO-220 Tube STW17N62K3 17N62K3 TO-247 Tube July 2011 Doc ID 15046 Rev 2 1/17 www.st.com 17

Contents STF17N62K3, STP17N62K3, STW17N62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP TO-247 V Drain-source voltage (V = 0) 620 V DS GS V Gate- source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 15.5 15.5 (1) A D C I Drain current (continuous) at T = 100 °C 10 10 (1) A D C I (2) Drain current (pulsed) 62 62 (1) A DM P Total dissipation at T = 25 °C 190 40 W TOT C Avalanche current, repetitive or not- I (3) 15.5 A AR repetitive E (4) Single pulse avalanche energy 260 mJ AS Derating factor 1.52 0.32 W/°C dv/dt (5) Peak diode recovery voltage slope 9 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature -55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited only by temperature allowed. 2. Pulse width limited by safe operating area. 3. Pulse width limited by Tj max. 4. Starting Tj = 25°C, I = I , V = 50V. D AR DD 5. I ≤ 15.5 A, di/dt ≤ 400 A/µs, V = 80% V , V peak < V . SD DD (BR)DSS DS (BR)DSS T able 3. Thermal data Symbol Parameter TO-220FP TO-220 TO-247 Unit R Thermal resistance junction-case max 3.13 0.66 °C/W thj-case R Thermal resistance junction-ambient max 62.5 50 °C/W thj-amb Maximum lead temperature for soldering T 300 °C l purpose Doc ID 15046 Rev 2 3/17

Electrical characteristics STF17N62K3, STP17N62K3, STW17N62K3 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V breakdown voltage I = 1 mA 620 V (BR)DSS D (V = 0) GS Zero gate voltage V = 620 V 1 µA I DS DSS drain current (V = 0) V = 620 V, T =125 °C 50 µA GS DS C Gate-body leakage I V = ± 20 V ± 10 µA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 7.5 A 0.28 0.34 Ω DS(on resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 3100 pF iss Output capacitance C V = 50 V, f = 1 MHz, V = 0 - 200 - pF oss DS GS Reverse transfer C 35 pF rss capacitance Equivalent C (1) capacitance time - 140 - pF o(tr) related V = 0 to 496 V, V = 0 DS GS Equivalent C (2) capacitance energy - 200 - pF o(er) related Intrinsic gate R f = 1 MHz open drain - 2.3 - Ω G resistance Q Total gate charge V = 496 V, I = 15.5 A, 105 nC g DD D Q Gate-source charge V = 10 V - 16 - nC gs GS Q Gate-drain charge (see Figure20) 62 nC gd 1. C time related is defined as a constant equivalent capacitance giving the same charging time as C oss eq. oss when V increases from 0 to 80% V DS DSS 2. C energy related is defined as a constant equivalent capacitance giving the same stored energy as oss eq. C when V increases from 0 to 80% V oss DS DSS 4/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t Turn-on delay time 22 ns d(on) V = 310 V, I = 7.5 A, t Rise time DD D 29 ns r R = 4.7 Ω, V = 10 V - - t Turn-off-delay time G GS 110 ns d(off) (see Figure19) t Fall time 62 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 15.5 A SD - I (1) Source-drain current (pulsed) 62 A SDM V (2) Forward on voltage I = 15.5 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time 380 ns rr I = 15.5 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 5000 nC rr V = 60 V (see Figure24) I Reverse recovery current DD 26 A RRM t Reverse recovery time I = 15.5 A, di/dt = 100 A/µs 450 ns rr SD Q Reverse recovery charge V = 60 V, T = 150 °C - 6500 nC rr DD j I Reverse recovery current (see Figure24) 29 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ Max Unit Gate-source breakdown BV Igs=± 1 mA (open drain) 30 V GSO voltage The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 15046 Rev 2 5/17

Electrical characteristics STF17N62K3, STP17N62K3, STW17N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP ID AM10342v1 (A) 101 OpeLriatmiitoen di nb ty hims aaxr eRa DiSs(on) 1110m0µ0ssµs 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 ID AM10341v1 (A) Tj=150°C Tc=25°C Single pulse 10 Operatimiotne id n btyh is maarx eaR iDsS(on) 1110m0µ0ssµs Li 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM10343v1 (A) Tj=150°C Tc=25°C Single pulse 100 10µs 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11m00sµs Li 10ms 1 0.1 0.1 1 10 100 VDS(V) 6/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM10344v1 AM10345v1 ID(A) ID(A) 45 VGS=15V VGS=10V 35 40 7V 30 35 30 25 25 20 20 6V 15 15 10 10 5 5 5V 0 0 0 5 10 15 20 25 VDS(V) 0 2 4 6 8 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance VGS AM10346v1 RDS(on) AM10347v1 (V) (Ω) 12 VDS VDD=496V ID=15.5A 500 0.290 VGS=10V 10 400 0.280 8 300 6 0.270 200 4 0.260 100 2 0 0 0.250 0 20 40 60 80 100 120 Qg(nC) 0 2 4 6 8 10 12 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM10348v1 AM10349v1 Eoss(µJ) (pF) Ciss 16 14 1000 12 10 100 Coss 8 Crss 6 10 4 2 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V) Doc ID 15046 Rev 2 7/17

Electrical characteristics STF17N62K3, STP17N62K3, STW17N62K3 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) AM10350v1 RDS(on) AM10351v1 (norm) (norm) ID=100µA 1.1 2.5 VGS=10V ID=7.5A 1.0 2.0 0.9 1.5 0.8 1.0 0.7 0.5 0.6 0.5 0 -75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C) Figure 16. Source-drain diode forward Figure 17. Normalized B vs temperature VDSS characteristics VSD AM10353v1 BVDSS AM10352v1 (V) (norm) ID=1mA 1.1 1.10 1.0 1.05 TJ=-50°C 0.9 1.00 0.8 0.95 0.7 TJ=25°C 0.6 TJ=150°C 0.90 0.5 0.85 0.4 0.80 0 2 4 6 8 10 12 ISD(A) -75 -25 25 75 125 TJ(°C) Figure 18. Maximum avalanche energy vs starting Tj AM10354v1 EAS(mJ) 280 ID=15.5 A 240 VDD=50 V 200 160 120 80 40 0 0 20 40 60 80 100 120 140TJ(°C) 8/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 15046 Rev 2 9/17

Package mechanical data STF17N62K3, STP17N62K3, STW17N62K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_K Doc ID 15046 Rev 2 11/17

Package mechanical data STF17N62K3, STP17N62K3, STW17N62K3 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 12/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15046 Rev 2 13/17

Package mechanical data STF17N62K3, STP17N62K3, STW17N62K3 Table 11. TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 14/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Package mechanical data Figure 27. TO-247 drawing 0075325_F Doc ID 15046 Rev 2 15/17

Revision history STF17N62K3, STP17N62K3, STW17N62K3 5 Revision history T able 12. Document revision history Date Revision Changes 11-Nov-2008 1 First release. Section2.1: Electrical characteristics (curves) has been updated. 27-Jul-2011 2 Minor text changes. 16/17 Doc ID 15046 Rev 2

STF17N62K3, STP17N62K3, STW17N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15046 Rev 2 17/17