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STF13N95K3产品简介:
ICGOO电子元器件商城为您提供STF13N95K3由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STF13N95K3价格参考。STMicroelectronicsSTF13N95K3封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 950V 10A(Tc) 40W(Tc) TO-220FP。您可以下载STF13N95K3参考资料、Datasheet数据手册功能说明书,资料中有STF13N95K3 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 950V 10.0A TO220FPMOSFET N-Ch 950V 0.68 Ohm 10A SuperMESH3 |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 10 A |
Id-连续漏极电流 | 10 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STF13N95K3SuperMESH3™ |
数据手册 | |
产品型号 | STF13N95K3 |
Pd-PowerDissipation | 40 W |
Pd-功率耗散 | 40 W |
Qg-GateCharge | 51 nC |
Qg-栅极电荷 | 51 nC |
RdsOn-Drain-SourceResistance | 850 mOhms |
RdsOn-漏源导通电阻 | 850 mOhms |
Vds-Drain-SourceBreakdownVoltage | 950 V |
Vds-漏源极击穿电压 | 950 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 30 V |
Vgs-栅源极击穿电压 | 30 V |
上升时间 | 16 ns |
下降时间 | 21 ns |
不同Id时的Vgs(th)(最大值) | 5V @ 100µA |
不同Vds时的输入电容(Ciss) | 1620pF @ 100V |
不同Vgs时的栅极电荷(Qg) | 51nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 850 毫欧 @ 5A,10V |
产品种类 | MOSFET |
供应商器件封装 | TO-220FP |
其它名称 | 497-12568-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1168/PF221155?referrer=70071840 |
典型关闭延迟时间 | 50 ns |
功率-最大值 | 40W |
包装 | 管件 |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 整包 |
封装/箱体 | TO-220FP-3 |
工厂包装数量 | 50 |
晶体管极性 | N-Channel |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
标准包装 | 50 |
漏源极电压(Vdss) | 950V |
电流-连续漏极(Id)(25°C时) | 10A (Tc) |
系列 | STF13N95K3 |
通道模式 | Enhancement |
配置 | Single |
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Ω N-channel 950 V, 0.68 typ., 10 A Zener-protected SuperMESH3™ 2 Power MOSFET in TO-220FP, I PAKFP, TO-220 and TO-247 − Datasheet production data Features Order codes V R max I P DSS DS(on) D TOT STF13N95K3 40 W STFI13N95K3 950 V < 0.85 Ω 10 A TO-220FP I2PAKFP STP13N95K3 190 W 1 2 STW13N95K3 TAB 3 ■ Gate charge minimized ■ Extremely large avalanche performance ■ 100% avalanche tested TO-220 TO-247 ■ Very low intrinsic capacitance ■ Zener-protected Applications Figure 1. Internal schematic diagram ■ Switching applications D(2 or TAB) Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to G(1) STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF13N95K3 TO-220FP STFI13N95K3 I2PAKFP 13N95K3 Tube STP13N95K3 TO-220 STW13N95K3 TO-247 June 2012 Doc ID15685 Rev 3 1/19 This is information on a product in full production. www.st.com 19
Contents STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Electrical ratings 1 Electrical ratings . Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP TO-247 I2PAKFP V Drain source voltage 950 V DS V Gate- source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 10 10 (1) A D C I Drain current (continuous) at T = 100 °C 6 6 (1) A D C I (2) Drain current (pulsed) 40 40 (1) A DM P Total dissipation at T = 25 °C 190 40 W TOT C Max current during repetitive or single I pulse avalanche (pulse width limited by 13 A AR T ) jmax Single pulse avalanche energy E 400 mJ AS (starting T = 25 °C, I =I , V = 50 V) J D AS DD Insulation withstand voltage (RMS) from V all three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) dv/dt (3) Peak diode recovery voltage slope 9 V/ns T Operating junction temperature j - 55 to 150 °C T Storage temperature stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I ≤ 10 A, di/dt ≤ 400 A/µs, V ≤ V SD Peak (BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit TO-220FP TO-220 TO-247 I2PAKFP Rthj-case Thermal resistance junction-case max 0.66 3.13 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 50 62.5 °C/W Doc ID15685 Rev 3 3/19
Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA, V = 0 950 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = 950V, 1 µA DSS current (VGS = 0) VDS = 950V, Tc=125 °C 50 µA Gate body leakage current I V = ± 20 V ±10 µA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 100 µA 3 4 5 V GS(th) DS GS D Static drain-source on- R V = 10 V, I = 5 A 0.68 0.85 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance 1620 pF iss C Output capacitance 117 pF oss V =100 V, f=1 MHz, V =0 - - DS GS Reverse transfer C 1.2 pF rss capacitance Equivalent capacitance time C (1) - 115 - pF o(tr) related V = 0, V = 0 to 760 V GS DS Equivalent capacitance C (2) - 131 - pF o(er) energy related R Intrinsic gate resistance f = 1MHz open drain - 2.3 - Ω G Q Total gate charge V = 760 V, I = 10 A 51 nC g DD D Q Gate-source charge V =10 V - 10 - nC gs GS Q Gate-drain charge (see Figure20) 30 nC gd 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C when oss V increases from 0 to 80% V DS DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V increases from 0 to 80% V DS DSS 4/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 18 ns d(on) V = 475 V, I = 5 A, t Rise time DD D 16 ns r RG=4.7 Ω, VGS=10 V - - t Turn-off delay time 50 ns d(off) (see Figure22) t Fall time 21 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 10 mA SD - I Source-drain current (pulsed) 40 A SDM V (1) Forward on voltage I = 10 A, V =0 - 1.6 V SD SD GS t Reverse recovery time I = 10 A, V = 60 V 500 ns rr SD DD Q Reverse recovery charge di/dt = 100 A/µs, - 9 µC rr I Reverse recovery current (see Figure21) 36 A RRM I = 10 A,V = 60 V t Reverse recovery time SD DD 624 ns rr di/dt=100 A/µs, Q Reverse recovery charge - 11 µC rr Tj=150 °C(see I Reverse recovery current 37 A RRM Figure21) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BV Gate-source breakdown voltage Igs ± 1mA, (open drain) 30 - V GSO The built-in-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID15685 Rev 3 5/19
Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP and I2PAKFP and I2PAKFP (cid:41)(cid:36) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:16)(cid:86)(cid:17) (cid:8)(cid:33)(cid:9) (cid:17)(cid:16) (cid:17) (cid:47)(cid:80)(cid:69)(cid:82)(cid:77)(cid:65)(cid:73)(cid:84)(cid:84)(cid:73)(cid:69)(cid:79)(cid:68)(cid:78)(cid:0)(cid:0)(cid:73)(cid:66)(cid:78)(cid:89)(cid:0)(cid:0)(cid:84)(cid:72)(cid:77)(cid:73)(cid:83)(cid:65)(cid:0)(cid:88)(cid:0)(cid:65)(cid:82)(cid:50)(cid:69)(cid:36)(cid:65)(cid:0)(cid:73)(cid:51)(cid:8)(cid:83)(cid:79)(cid:78)(cid:9) (cid:17)(cid:17)(cid:17)(cid:16)(cid:16)(cid:77)(cid:16)(cid:151)(cid:83)(cid:151)(cid:83)(cid:83) (cid:44)(cid:73) (cid:17)(cid:16)(cid:77)(cid:83) (cid:52)(cid:74)(cid:29)(cid:17)(cid:21)(cid:16)(cid:160)(cid:35) (cid:16)(cid:14)(cid:17) (cid:52)(cid:67)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:51)(cid:73)(cid:78)(cid:71)(cid:76)(cid:69) (cid:80)(cid:85)(cid:76)(cid:83)(cid:69) (cid:16)(cid:14)(cid:16)(cid:17) (cid:16)(cid:14)(cid:17) (cid:17) (cid:17)(cid:16) (cid:17)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 (cid:41)(cid:36) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:17)(cid:86)(cid:17) (cid:8)(cid:33)(cid:9) (cid:17)(cid:16) (cid:47)(cid:80)(cid:69)(cid:82)(cid:65)(cid:84)(cid:77)(cid:73)(cid:73)(cid:84)(cid:79)(cid:69)(cid:78)(cid:0)(cid:68)(cid:73)(cid:0)(cid:78)(cid:66)(cid:0)(cid:84)(cid:89)(cid:0)(cid:72)(cid:73)(cid:77)(cid:83)(cid:0)(cid:65)(cid:65)(cid:88)(cid:82)(cid:0)(cid:69)(cid:50)(cid:65)(cid:0)(cid:36)(cid:73)(cid:51)(cid:83)(cid:8)(cid:79)(cid:78)(cid:9) (cid:17)(cid:17)(cid:17)(cid:16)(cid:16)(cid:77)(cid:16)(cid:151)(cid:83)(cid:151)(cid:83)(cid:83) (cid:44)(cid:73) (cid:17) (cid:17)(cid:16)(cid:77)(cid:83) (cid:52)(cid:74)(cid:29)(cid:17)(cid:21)(cid:16)(cid:160)(cid:35) (cid:52)(cid:67)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:51)(cid:73)(cid:78)(cid:71)(cid:76)(cid:69) (cid:80)(cid:85)(cid:76)(cid:83)(cid:69) (cid:16)(cid:14)(cid:17) (cid:16)(cid:14)(cid:17) (cid:17) (cid:17)(cid:16) (cid:17)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 (cid:41)(cid:36) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:18)(cid:86)(cid:17) (cid:8)(cid:33)(cid:9) (cid:17)(cid:16)(cid:151)(cid:83) (cid:17)(cid:16) (cid:47)(cid:80)(cid:69)(cid:82)(cid:65)(cid:84)(cid:77)(cid:73)(cid:73)(cid:84)(cid:79)(cid:69)(cid:78)(cid:0)(cid:68)(cid:73)(cid:0)(cid:78)(cid:66)(cid:0)(cid:84)(cid:89)(cid:0)(cid:72)(cid:73)(cid:77)(cid:83)(cid:0)(cid:65)(cid:65)(cid:88)(cid:82)(cid:0)(cid:69)(cid:50)(cid:65)(cid:0)(cid:36)(cid:73)(cid:51)(cid:83)(cid:8)(cid:79)(cid:78)(cid:9) (cid:17)(cid:17)(cid:16)(cid:77)(cid:16)(cid:83)(cid:151)(cid:83) (cid:17) (cid:44)(cid:73) (cid:52)(cid:74)(cid:29)(cid:17)(cid:21)(cid:16)(cid:160)(cid:35) (cid:17)(cid:16)(cid:77)(cid:83) (cid:52)(cid:67)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:51)(cid:73)(cid:78)(cid:71)(cid:76)(cid:69) (cid:80)(cid:85)(cid:76)(cid:83)(cid:69) (cid:16)(cid:14)(cid:17) (cid:16)(cid:14)(cid:17) (cid:17) (cid:17)(cid:16) (cid:17)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) 6/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics (cid:41)(cid:36)(cid:8)(cid:33)(cid:9) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:19)(cid:86)(cid:17) (cid:41)(cid:36)(cid:8)(cid:33)(cid:9) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:20)(cid:86)(cid:17) (cid:17)(cid:24) (cid:54)(cid:39)(cid:51)(cid:29)(cid:17)(cid:16)(cid:54) (cid:17)(cid:24) (cid:54)(cid:36)(cid:51)(cid:29)(cid:17)(cid:21)(cid:54) (cid:17)(cid:22) (cid:17)(cid:22) (cid:17)(cid:20) (cid:23)(cid:54) (cid:17)(cid:20) (cid:17)(cid:18) (cid:17)(cid:18) (cid:17)(cid:16) (cid:17)(cid:16) (cid:24) (cid:24) (cid:22) (cid:22) (cid:22)(cid:54) (cid:20) (cid:20) (cid:18) (cid:18) (cid:21)(cid:54) (cid:16) (cid:16) (cid:16) (cid:21) (cid:17)(cid:16) (cid:17)(cid:21) (cid:18)(cid:16) (cid:18)(cid:21) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) (cid:16) (cid:17) (cid:18) (cid:19) (cid:20) (cid:21) (cid:22) (cid:23) (cid:24) (cid:25) (cid:54)(cid:39)(cid:51)(cid:8)(cid:54)(cid:9) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:21)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:22)(cid:86)(cid:17) (cid:50)(cid:36)(cid:51)(cid:8)(cid:79)(cid:78)(cid:9) (cid:54)(cid:39)(cid:51)(cid:8)(cid:54)(cid:9) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) (cid:8)(cid:47)(cid:72)(cid:77)(cid:9) (cid:17)(cid:18) (cid:54)(cid:36)(cid:51) (cid:54)(cid:36)(cid:36)(cid:29)(cid:23)(cid:22)(cid:16)(cid:54) (cid:23)(cid:16)(cid:16) (cid:16)(cid:14)(cid:23)(cid:18) (cid:54)(cid:39)(cid:51)(cid:29)(cid:17)(cid:16)(cid:54) (cid:41)(cid:36)(cid:29)(cid:17)(cid:16)(cid:33) (cid:22)(cid:16)(cid:16) (cid:17)(cid:16) (cid:16)(cid:14)(cid:23)(cid:16) (cid:21)(cid:16)(cid:16) (cid:24) (cid:16)(cid:14)(cid:22)(cid:24) (cid:20)(cid:16)(cid:16) (cid:22) (cid:16)(cid:14)(cid:22)(cid:22) (cid:19)(cid:16)(cid:16) (cid:20) (cid:16)(cid:14)(cid:22)(cid:20) (cid:18)(cid:16)(cid:16) (cid:18) (cid:17)(cid:16)(cid:16) (cid:16)(cid:14)(cid:22)(cid:18) (cid:16) (cid:16) (cid:16)(cid:14)(cid:22)(cid:16) (cid:16) (cid:17)(cid:16) (cid:18)(cid:16) (cid:19)(cid:16) (cid:20)(cid:16) (cid:21)(cid:16) (cid:22)(cid:16) (cid:49)(cid:71)(cid:8)(cid:78)(cid:35)(cid:9) (cid:16) (cid:17) (cid:18) (cid:19) (cid:20) (cid:21) (cid:22) (cid:41)(cid:36)(cid:8)(cid:33)(cid:9) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy (cid:35) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:23)(cid:86)(cid:17) (cid:37)(cid:79)(cid:83)(cid:83) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:24)(cid:86)(cid:17) (cid:8)(cid:80)(cid:38)(cid:9) (cid:8)(cid:151)(cid:42)(cid:9) (cid:35)(cid:73)(cid:83)(cid:83) (cid:18)(cid:16) (cid:17)(cid:16)(cid:16)(cid:16) (cid:17)(cid:24) (cid:17)(cid:22) (cid:17)(cid:16)(cid:16) (cid:17)(cid:20) (cid:35)(cid:79)(cid:83)(cid:83) (cid:17)(cid:18) (cid:17)(cid:16) (cid:17)(cid:16) (cid:24) (cid:35)(cid:82)(cid:83)(cid:83) (cid:22) (cid:17) (cid:20) (cid:18) (cid:16)(cid:14)(cid:17) (cid:16) (cid:16)(cid:14)(cid:17) (cid:17) (cid:17)(cid:16) (cid:17)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) (cid:16) (cid:17)(cid:16)(cid:16) (cid:18)(cid:16)(cid:16) (cid:19)(cid:16)(cid:16) (cid:20)(cid:16)(cid:16) (cid:21)(cid:16)(cid:16) (cid:22)(cid:16)(cid:16) (cid:23)(cid:16)(cid:16) (cid:24)(cid:16)(cid:16) (cid:25)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) Doc ID15685 Rev 3 7/19
Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature (cid:54)(cid:39)(cid:51)(cid:8)(cid:84)(cid:72)(cid:9) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:24)(cid:25)(cid:86)(cid:17) (cid:50)(cid:36)(cid:51)(cid:8)(cid:79)(cid:78)(cid:9) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:25)(cid:16)(cid:86)(cid:17) (cid:8)(cid:78)(cid:79)(cid:82)(cid:77)(cid:9) (cid:8)(cid:78)(cid:79)(cid:82)(cid:77)(cid:9) (cid:17)(cid:14)(cid:20) (cid:19)(cid:14)(cid:16) (cid:17)(cid:14)(cid:18) (cid:18)(cid:14)(cid:21) (cid:17)(cid:14)(cid:16) (cid:18)(cid:14)(cid:16) (cid:16)(cid:14)(cid:24) (cid:17)(cid:14)(cid:21) (cid:16)(cid:14)(cid:22) (cid:17)(cid:14)(cid:16) (cid:16)(cid:14)(cid:20) (cid:16)(cid:14)(cid:21) (cid:16)(cid:14)(cid:18) (cid:16) (cid:13)(cid:23)(cid:21) (cid:13)(cid:18)(cid:21) (cid:18)(cid:21) (cid:23)(cid:21) (cid:17)(cid:18)(cid:21) (cid:52)(cid:42)(cid:8)(cid:160)(cid:35)(cid:9) (cid:13)(cid:23)(cid:21) (cid:13)(cid:18)(cid:21) (cid:18)(cid:21) (cid:23)(cid:21) (cid:17)(cid:18)(cid:21) (cid:52)(cid:42)(cid:8)(cid:160)(cid:35)(cid:9) Figure 16. Source-drain diode forward Figure 17. Normalized B vs temperature VDSS characteristics (cid:54)(cid:51)(cid:36)(cid:8)(cid:54)(cid:9) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:25)(cid:19)(cid:86)(cid:17) (cid:34)(cid:54)(cid:36)(cid:51)(cid:51) (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:25)(cid:17)(cid:86)(cid:17) (cid:8)(cid:78)(cid:79)(cid:82)(cid:77)(cid:9) (cid:16)(cid:14)(cid:25)(cid:21) (cid:52)(cid:42)(cid:29)(cid:13)(cid:21)(cid:16)(cid:160)(cid:35) (cid:17)(cid:14)(cid:19) (cid:16)(cid:14)(cid:25)(cid:16) (cid:17)(cid:14)(cid:18) (cid:16)(cid:14)(cid:24)(cid:21) (cid:52)(cid:42)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:17)(cid:14)(cid:17) (cid:16)(cid:14)(cid:24)(cid:16) (cid:16)(cid:14)(cid:23)(cid:21) (cid:17)(cid:14)(cid:16) (cid:16)(cid:14)(cid:23)(cid:16) (cid:16)(cid:14)(cid:25) (cid:16)(cid:14)(cid:22)(cid:21) (cid:52)(cid:42)(cid:29)(cid:17)(cid:21)(cid:16)(cid:160)(cid:35) (cid:16)(cid:14)(cid:24) (cid:16)(cid:14)(cid:22)(cid:16) (cid:16)(cid:14)(cid:23) (cid:16)(cid:14)(cid:21)(cid:21) (cid:16)(cid:14)(cid:21)(cid:16) (cid:16)(cid:14)(cid:22) (cid:16) (cid:17) (cid:18) (cid:19) (cid:20) (cid:21) (cid:22) (cid:23) (cid:24) (cid:41)(cid:51)(cid:36)(cid:8)(cid:33)(cid:9) (cid:13)(cid:23)(cid:21) (cid:13)(cid:18)(cid:21) (cid:18)(cid:21) (cid:23)(cid:21) (cid:17)(cid:18)(cid:21) (cid:52)(cid:42)(cid:8)(cid:160)(cid:35)(cid:9) Figure 18. Maximum avalanche energy vs starting Tj (cid:33)(cid:45)(cid:16)(cid:23)(cid:16)(cid:25)(cid:18)(cid:86)(cid:17) (cid:37)(cid:33)(cid:51)(cid:8)(cid:77)(cid:42)(cid:9) (cid:20)(cid:16)(cid:16) (cid:41)(cid:36)(cid:29)(cid:17)(cid:19)(cid:0)(cid:33) (cid:19)(cid:21)(cid:16) (cid:54)(cid:36)(cid:36)(cid:29)(cid:21)(cid:16)(cid:0)(cid:54) (cid:19)(cid:16)(cid:16) (cid:18)(cid:21)(cid:16) (cid:18)(cid:16)(cid:16) (cid:17)(cid:21)(cid:16) (cid:17)(cid:16)(cid:16) (cid:21)(cid:16) (cid:16) (cid:16) (cid:18)(cid:16) (cid:20)(cid:16) (cid:22)(cid:16) (cid:24)(cid:16) (cid:17)(cid:16)(cid:16) (cid:17)(cid:18)(cid:16) (cid:17)(cid:20)(cid:16)(cid:52)(cid:42)(cid:8)(cid:160)(cid:35)(cid:9) 8/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID15685 Rev 3 9/19
Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Package mechanical data T able 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID15685 Rev 3 11/19
Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Figure 25. TO-220FP drawing 7012510_Rev_K_B 12/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Package mechanical data Table 10. I2PAKFP mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 - 5.20 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 Figure 26. I2PAKFP drawing (cid:24)(cid:18)(cid:25)(cid:17)(cid:21)(cid:16)(cid:22)(cid:0)(cid:82)(cid:69)(cid:86)(cid:14)(cid:33) Doc ID15685 Rev 3 13/19
Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID15685 Rev 3 15/19
Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID15685 Rev 3 17/19
Revision history STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 5 Revision history T able 13. Document revision history Date Revision Changes 15-May-2009 1 First release. 02-Sep-2010 2 Document status promoted from preliminary data to datasheet. Added new device in I²PAKFP. Table1: Device summary, Table2: Absolute maximum ratings, Table3: Thermal data, Figure2: Safe operating area for TO- 21-Jun-2012 3 220FP and I2PAKFP, Figure3: Thermal impedance for TO- 220FP and I2PAKFP have been modified accordingly. Table10: I2PAKFP mechanical data and Figure26: I2PAKFP drawing have been added. 18/19 Doc ID15685 Rev 3
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