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STF11NM80产品简介:
ICGOO电子元器件商城为您提供STF11NM80由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STF11NM80价格参考。STMicroelectronicsSTF11NM80封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 800V 11A(Tc) 35W(Tc) TO-220FP。您可以下载STF11NM80参考资料、Datasheet数据手册功能说明书,资料中有STF11NM80 详细功能的应用电路图电压和使用方法及教程。
STF11NM80是由STMicroelectronics生产的N沟道增强型MOSFET(金属氧化物场效应晶体管),具有多种应用场景。以下是一些常见的应用领域: 1. 电源管理 STF11NM80适用于各种电源管理电路,如开关电源(SMPS)、直流-直流转换器(DC-DC)和电池充电电路。其低导通电阻(Rds(on))特性有助于提高效率,减少功率损耗。此外,它可以在高频下工作,适合用于高效能的电源转换系统。 2. 电机驱动 在电机驱动应用中,STF11NM80可以作为功率级的一部分,用于控制电机的速度和方向。它可以用于无刷直流电机(BLDC)、步进电机和其他类型的电机驱动器中。其快速开关特性和高耐压能力使其能够在电机启动、加速和制动过程中提供稳定的性能。 3. 负载开关 STF11NM80可以用作负载开关,控制电路中的电流流动。它能够快速响应,确保在需要时迅速切断或接通电流,保护下游电路免受过流、短路等故障的影响。这种应用场景常见于消费电子设备、工业控制系统和汽车电子中。 4. 逆变器和变频器 在逆变器和变频器中,STF11NM80可以用于将直流电转换为交流电,或者调节交流电的频率和电压。它的高耐压能力和快速开关速度使其非常适合这些应用,尤其是在太阳能逆变器和工业变频器中。 5. 保护电路 STF11NM80还可以用于设计过流保护、过温保护和短路保护电路。通过检测异常情况并迅速切断电流路径,它可以有效防止电路损坏,提升系统的可靠性和安全性。 6. 音频放大器 在某些音频放大器设计中,STF11NM80可以用作输出级器件,帮助放大信号并驱动扬声器。其低噪声特性和高效率有助于提供清晰的音质。 总之,STF11NM80凭借其出色的电气性能和可靠性,广泛应用于电源管理、电机驱动、负载开关、逆变器、保护电路和音频放大器等领域。
参数 | 数值 |
产品目录 | |
描述 | MOSFET N-CH 800V 11A TO220FP |
产品分类 | FET - 单 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
品牌 | STMicroelectronics |
数据手册 | |
产品图片 | |
产品型号 | STF11NM80 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | MDmesh™ |
不同Id时的Vgs(th)(最大值) | 5V @ 250µA |
不同Vds时的输入电容(Ciss) | 1630pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 43.6nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 400 毫欧 @ 5.5A,10V |
产品目录页面 | |
供应商器件封装 | TO-220FP |
其它名称 | 497-4338-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1168/PF69853?referrer=70071840 |
功率-最大值 | 35W |
包装 | 管件 |
安装类型 | 通孔 |
封装/外壳 | TO-220-3 整包 |
标准包装 | 50 |
漏源极电压(Vdss) | 800V |
电流-连续漏极(Id)(25°C时) | 11A (Tc) |
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 Ω N-channel 800 V, 0.35 , 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features R Order codes V DS(on) R *Q I DSS max DS(on) g D 3 STB11NM80 1 23 1 STF11NM80 D²PAK TO-220FP STI11NM80 800 V < 0.40 Ω 14Ω*nC 11 A STP11NM80 STW11NM80 3 ■ Low input capacitance and gate charge 123 123 1 2 ■ Low gate input resistance I²PAK TO-220 TO-247 ■ Best R *Qg in the industry DS(on) Applications Figure 1. Internal schematic diagram ■ Switching applications (cid:36)(cid:8)(cid:18)(cid:9) Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which (cid:39)(cid:8)(cid:17)(cid:9) associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche (cid:51)(cid:8)(cid:19)(cid:9) characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) similar products on the market. Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 D²PAK Tape and reel STF11NM80 F11NM80 TO-220FP STI11NM80 I11NM80 I²PAK Tube STP11NM80 P11NM80 TO-220 STW11NM80 W11NM80 TO-247 September 2011 Doc ID 9241 Rev 11 1/22 www.st.com 22
Contents STB/F/I/P/W11NM80 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK, I²PAK TO-220FP TO-220, TO-247 V Drain-source voltage (V = 0) 800 V DS GS V Gate-source voltage ±30 V GS I Drain current (continuous) at T = 25 °C 11 11 (1) A D C I Drain current (continuous) at T =100 °C 8 8 (1) A D C I (2) Drain current (pulsed) 44 44 (1) A DM P Total dissipation at T = 25 °C 150 35 W TOT C Derating factor 1.2 0.28 W/°C V Insulation withstand voltage (DC) 2500 V ISO TJ Operating junction temperature -65 to 150 °C T Storage temperature stg 1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area T able 3. Thermal data Value Symbol Parameter Unit D²PAK TO-220FP I²PAK TO-220 TO-247 Thermal resistance junction-case R 0.83 3.6 0.83 °C/W thj-case max Thermal resistance junction- R 62.5 50 °C/W thj-a ambient max Thermal resistance junction-pcb R (1) 30 °C/W thj-pcb max Maximum lead temperature for T 300 °C l soldering purpose 1. When mounted on 1inch² FR-4 board, 2 oz Cu T able 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not- I 2.5 A AS repetitive (pulse width limited by Tj max) Single pulse avalanche energy E 400 mJ AS (starting Tj = 25 °C, I = I , V = 50 V) D AR DD Doc ID 9241 Rev 11 3/22
Electrical characteristics STB/F/I/P/W11NM80 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA 800 V (BR)DSS voltage (V = 0) D GS V = 640 V, I = 11 A, dv/dt (1) Drain source voltage slope DD D 30 V/ns V = 10 V GS I Zero gate voltage drain VDS = 800 V, 10 µA DSS current (VGS = 0) VDS = 800 V @125°C 100 µA Gate body leakage current I V = ±30 V 100 nA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 5.5 A 0.35 0.40 Ω DS(on) resistance GS D 1. Characteristic value at turn off on inductive load Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit V > I x R , g (1) Forward transconductance DS D(on) DS(on)max - 8 - S fs I = 7.5 A D Input capacitance C 1630 pF iss Output capacitance V =25 V, f=1 MHz, C DS - 750 - pF oss Reverse transfer VGS=0 C 30 pF rss capacitance Q Total gate charge V =640 V, I = 11 A 43.6 nC g DD D Q Gate-source charge V =10 V - 11.6 - nC gs GS Q Gate-drain charge (see Figure18) 21 nC gd f=1MHz Gate DC Bias=0 R Gate input resistance Test signal level=20 mV - 2.7 - Ω g open drain t Turn-on delay time 22 ns d(on) V =400 V, I = 5.5 A, t Rise time DD D 17 ns r R =4.7 Ω, V =10 V - - t Turn-off delay time G GS 46 ns d(off) (see Figure17) t Fall time 15 ns f 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 11 A SD - I (1) Source-drain current (pulsed) 44 A SDM V (2) Forward on voltage I =11 A, V =0 - 0.86 V SD SD GS t Reverse recovery time I =11 A, 612 ns rr SD Q Reverse recovery charge di/dt = 100 A/µs, - 7.22 µC rr I Reverse recovery current V = 50 V 23.6 A RRM DD t Reverse recovery time I =11 A, 970 ns rr SD Q Reverse recovery charge di/dt = 100 A/µs, - 11.25 µC rr I Reverse recovery current V = 50 V, Tj=150 °C 23.2 A RRM DD 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 9241 Rev 11 5/22
Electrical characteristics STB/F/I/P/W11NM80 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK, Figure 3. Thermal impedance for D²PAK, I²PAK, TO-220, TO-247 I²PAK, TO-220, TO-247 ID AM03328v1 (A) 1µs 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 111m00µ0ssµs 1 Li Tj=150°C 10ms Tc=25°C Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID AM03329v1 (A) 1µs 101 OpeLriatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100mµ0ssµs 10ms Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Output characteristics @ T =150 °C J 6/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Electrical characteristics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Static drain-source on resistance vs temperature Doc ID 9241 Rev 11 7/22
Electrical characteristics STB/F/I/P/W11NM80 Figure 14. Source-drain diode forward Figure 15. Normalized on resistance vs characteristics temperature Figure 16. Normalized B vs temperature VDSS 8/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Test circuits 3 Test circuits Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 9241 Rev 11 9/22
Package mechanical data STB/F/I/P/W11NM80 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Package mechanical data Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Doc ID 9241 Rev 11 11/22
Package mechanical data STB/F/I/P/W11NM80 Figure 23. D²PAK (TO-263) drawing 0079457_S Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters 12/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_K Doc ID 9241 Rev 11 13/22
Package mechanical data STB/F/I/P/W11NM80 Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H 14/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Doc ID 9241 Rev 11 15/22
Package mechanical data STB/F/I/P/W11NM80 Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S 16/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Package mechanical data Table 12. TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 9241 Rev 11 17/22
Package mechanical data STB/F/I/P/W11NM80 Figure 28. TO-247 drawing 0075325_F 18/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Packaging mechanical data 5 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 9241 Rev 11 19/22
Packaging mechanical data STB/F/I/P/W11NM80 Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 20/22 Doc ID 9241 Rev 11
STB/F/I/P/W11NM80 Revision history 6 Revision history T able 14. Document revision history Date Revision Changes 30-Sep-2004 4 Preliminary version 26-Nov-2005 5 Complete version 07-Apr-2006 6 Modified value on Figure8 15-May-2006 7 New dv/dt value on Table5 20-Jul-2006 8 The document has been reformatted 20-Dec-2007 9 Updated I value on Table2: Absolute maximum ratings D 24-Mar-2010 10 Inserted dv/dt value in Table2: Absolute maximum ratings Added new package and mechanical data : I²PAK 12-Sep-2011 11 Minor text changes Doc ID 9241 Rev 11 21/22
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