ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET,MOSFET - 单 > STD95N2LH5
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STD95N2LH5产品简介:
ICGOO电子元器件商城为您提供STD95N2LH5由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STD95N2LH5价格参考。STMicroelectronicsSTD95N2LH5封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 25V 80A(Tc) 70W(Tc) DPAK。您可以下载STD95N2LH5参考资料、Datasheet数据手册功能说明书,资料中有STD95N2LH5 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 25V 80A DPAKMOSFET N-channel 25V 25V - 0.0037 |
产品分类 | FET - 单分离式半导体 |
FET功能 | 逻辑电平门 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 80 A |
Id-连续漏极电流 | 80 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STD95N2LH5STripFET™ V |
数据手册 | |
产品型号 | STD95N2LH5 |
Pd-PowerDissipation | 70 W |
Pd-功率耗散 | 70 W |
RdsOn-Drain-SourceResistance | 4.5 mOhms |
RdsOn-漏源导通电阻 | 4.5 mOhms |
Vds-Drain-SourceBreakdownVoltage | 25 V |
Vds-漏源极击穿电压 | 25 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 22 V |
Vgs-栅源极击穿电压 | 22 V |
上升时间 | 38 ns |
下降时间 | 7 ns |
不同Id时的Vgs(th)(最大值) | 1V @ 250µA |
不同Vds时的输入电容(Ciss) | 1817pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 13.4nC @ 5V |
不同 Id、Vgs时的 RdsOn(最大值) | 4.5 毫欧 @ 40A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | D-Pak |
其它名称 | 497-7005-2 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1164/PF188062?referrer=70071840 |
典型关闭延迟时间 | 22 ns |
功率-最大值 | 70W |
包装 | 带卷 (TR) |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-252-3,DPak(2 引线+接片),SC-63 |
封装/箱体 | DPAK-2 |
工厂包装数量 | 2500 |
晶体管极性 | N-Channel |
最大工作温度 | + 175 C |
最小工作温度 | - 55 C |
标准包装 | 2,500 |
漏源极电压(Vdss) | 25V |
电流-连续漏极(Id)(25°C时) | 80A (Tc) |
系列 | STD95N2LH5 |
通道模式 | Enhancement |
配置 | Single |
STD95N2LH5 STP95N2LH5, STU95N2LH5 Ω N-channel 25 V, 0.0038 , 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type V R max I DSS DS(on) D 3 STD95N2LH5 25 V < 0.0045 Ω 80 A 3 1 2 STP95N2LH5 25 V < 0.0049 Ω 80 A 1 DPAK STU95N2LH5 25 V < 0.0049 Ω 80 A IPAK ■ R * Q industry benchmark DS(on) g ■ Extremely low on-resistance R DS(on) ■ High avalanche ruggedness 3 2 1 ■ Low gate drive power losses TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram Description (cid:36)(cid:0)(cid:8)(cid:52)(cid:33)(cid:34)(cid:0)(cid:79)(cid:82)(cid:0)(cid:18)(cid:9) This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit). (cid:39)(cid:8)(cid:17)(cid:9) (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:20)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STD95N2LH5 95N2LH5 DPAK Tape and reel STP95N2LH5 95N2LH5 TO-220 Tube STU95N2LH5 95N2LH5 IPAK Tube April 2010 Doc ID 13834 Rev 5 1/17 www.st.com 17
Contents STD95N2LH5, STP95N2LH5, STU95N2LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 13834 Rev 5
STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK/IPAK TO-220 V Drain-source voltage (V =0) 25 V DS GS V Gate-Source voltage ± 22 V GS I (1) Drain current (continuous) at T = 25°C 80 95 A D C I Drain current (continuous) at T = 100°C 67 A D C I (2) Drain current (pulsed) 320 380 A DM P Total dissipation at T = 25°C 70 80 W TOT C Derating factor 0.47 W/°C E (3) Single pulse avalanche energy 165 mJ AS T Operating junction temperature j -55 to 175 °C T Storage temperature stg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V Table 3. Thermal resistance Symbol Parameter Value Unit R Thermal resistance junction-case max 2.14 °C/W thj-case R Thermal resistance junction-case max 100 °C/W thj-amb T Maximum lead temperature for soldering purpose 275 °C j Doc ID 13834 Rev 5 3/17
Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 25 V (BR)DSS Voltage D GS I Zero gate voltage drain VDS = 25 V 1 µA DSS current (VGS = 0) VDS = 25 V,Tc = 125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ± 22 V ±100 nA DS V Gate threshold voltage V = V , I = 250 µA 1 V GS(th) DS GS D V = 10 V, I = 40 A GS D 0.0038 0.0045 Ω SMD version Static drain-source on VGS= 10 V, ID= 40 A 0.0044 0.0049 Ω R DS(on) resistance V = 5 V, I = 40 A GS D 0.005 0.006 Ω SMD version V = 5 V, I = 40 A 0.006 0.007 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1817 pF iss Output capacitance V =25 V, f=1 MHz, C DS - 420 - pF oss Reverse transfer VGS=0 C 67 pF rss capacitance Q Total gate charge V =13 V, I = 80 A 13.4 nC g DD D Q Gate-source charge V =5 V - 6.7 - nC gs GS Q Gate-drain charge Figure18 4.1 nC gd Pre V gate-to-source Q th 3.5 nC gs1 charge V =13 V, I = 80 A DD D - - Post V gate-to-source Figure21 Q th 3.2 nC gs2 charge f=1 MHz gate bias Bias= 0 test signal R Gate input resistance - 1.1 - Ω G level=20 mV open drain 4/17 Doc ID 13834 Rev 5
STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit V =12.5 V, I = 40 A, t Turn-on delay time DD D 7 ns d(on) R = 4.7 Ω, V = 10 V - - t Rise time G GS 38 ns r Figure17 V =12.5 V, I = 40 A, t Turn-off delay time DD D 22 ns d(off) R = 4.7 Ω, V = 10 V - - t Fall time G GS 7 ns f Figure17 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 80 A SD - I (1) Source-drain current (pulsed) 320 A SDM V (2) Forward on voltage I = 35 A, V =0 - 1.1 V SD SD GS t Reverse recovery time I = 80 A, V = 20 V 32.4 ns rr SD DD Q Reverse recovery charge di/dt =100 A/µs, - 27.1 nC rr I Reverse recovery current Figure19 1.7 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13834 Rev 5 5/17
Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK, IPAK Figure 3. Thermal impedance for DPAK, IPAK Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 ID AM04907v1 (A) 100 OpLeiramititoend ibn yt himsa xa rReaD iS(son) 110m0µss 10 10ms Tj=150°C 1 Tc=25°C Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics 6/17 Doc ID 13834 Rev 5
STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics Figure 8. Normalized B vs temperature Figure 9. Static drain-source on resistance VDSS Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs vs temperature temperature Doc ID 13834 Rev 5 7/17
Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 Figure 14. Source-drain diode forward characteristics 8/17 Doc ID 13834 Rev 5
STD95N2LH5, STP95N2LH5, STU95N2LH5 Test circuits 3 Test circuits Figure 15. Unclamped inductive load test Figure 16. Unclamped inductive waveform circuit Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load Figure 19. Test circuit for inductive load Figure 20. Switching time waveform switching and diode recovery times Doc ID 13834 Rev 5 9/17
Test circuits STD95N2LH5, STP95N2LH5, STU95N2LH5 Figure 21. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd 10/17 Doc ID 13834 Rev 5
STD95N2LH5, STP95N2LH5, STU95N2LH5 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13834 Rev 5 11/17
Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5 TO-220 type A mechanical data mm Dim Min Typ Max A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 0015988_Rev_S 12/17 Doc ID 13834 Rev 5
STD95N2LH5, STP95N2LH5, STU95N2LH5 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 13834 Rev 5 13/17
Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5 TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0 o 8 o 0068772_G 14/17 Doc ID 13834 Rev 5
STD95N2LH5, STP95N2LH5, STU95N2LH5 Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 Doc ID 13834 Rev 5 15/17
Revision history STD95N2LH5, STP95N2LH5, STU95N2LH5 6 Revision history T 2a9- ble 8. Document revision history Date Revision Changes 16-Oct-2007 1 First release 20-Feb-2008 2 Modified Table 4.: Static 23-Sep-2008 3 V value has been changed on Table2 and Table5 GS 20-Apr-2009 4 Added device in TO-220 – Table1: Device summary has been corrected 26-Apr-2010 5 – Section4: Package mechanical data has been updated 16/17 Doc ID 13834 Rev 5
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