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STD7NM80产品简介:
ICGOO电子元器件商城为您提供STD7NM80由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STD7NM80价格参考。STMicroelectronicsSTD7NM80封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 800V 6.5A(Tc) 90W(Tc) DPAK。您可以下载STD7NM80参考资料、Datasheet数据手册功能说明书,资料中有STD7NM80 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 800V 6.5A DPAKMOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 6.5 A |
Id-连续漏极电流 | 6.5 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STD7NM80MDmesh™ |
数据手册 | |
产品型号 | STD7NM80 |
Pd-PowerDissipation | 90 W |
Pd-功率耗散 | 90 W |
Qg-GateCharge | 18 nC |
Qg-栅极电荷 | 18 nC |
RdsOn-Drain-SourceResistance | 1.05 Ohms |
RdsOn-漏源导通电阻 | 1.05 Ohms |
Vds-Drain-SourceBreakdownVoltage | 800 V |
Vds-漏源极击穿电压 | 800 V |
Vgs-Gate-SourceBreakdownVoltage | 30 V |
Vgs-栅源极击穿电压 | 30 V |
Vgsth-Gate-SourceThresholdVoltage | 4 V |
Vgsth-栅源极阈值电压 | 4 V |
上升时间 | 8 ns |
下降时间 | 10 ns |
不同Id时的Vgs(th)(最大值) | 5V @ 250µA |
不同Vds时的输入电容(Ciss) | 620pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 18nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 1.05 欧姆 @ 3.25A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | D-Pak |
其它名称 | 497-8807-6 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1168/PF143379?referrer=70071840 |
典型关闭延迟时间 | 35 ns |
功率-最大值 | 90W |
包装 | Digi-Reel® |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-252-3,DPak(2 引线+接片),SC-63 |
封装/箱体 | DPAK-2 |
工厂包装数量 | 2500 |
晶体管极性 | N-Channel |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
标准包装 | 1 |
正向跨导-最小值 | 4 S |
漏源极电压(Vdss) | 800V |
电流-连续漏极(Id)(25°C时) | 6.5A (Tc) |
系列 | STD7NM80 |
通道模式 | Enhancement |
配置 | Single |
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages Features TAB 123 Order codes VDS RDS(on)max. ID DPAK TAB STD7NM80 3 STD7NM80-1 12 3 800 V 1.05 Ω 6.5 A 2 IPAK TAB 1 STF7NM80 TO-220FP STP7NM80 3 • 100% avalanche tested 2 1 TO-220 • Low input capacitance and gate charge • Low gate input resistance D(2) Applications • Switching applications G(1) Description S(3) These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs AM01475v1_noZen_noTab associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status STD7NM80 STD7NM80-1 STF7NM80 STP7NM80 DS4854 - Rev 4 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK, TO-220FP TO-220 VDS Drain-source voltage 800 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 6.5 6.5 (1) A ID Drain current (continuous) at TC = 100 °C 4 4 (1) A IDM (2) Drain current (pulsed) 26 26 (1) A PTOT Total dissipation at TC = 25 °C 90 25 W Insulation withstand voltage (RMS) from all three leads to external VISO heat sink (t = 1 s; TC = 25 °C) 2.5 kV Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. Table 2. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220FP TO-220 Thermal resistance Rthj-case junction-case 1.4 5 1.4 °C/W Thermal resistance Rthj-amb junction-ambient 100 62.5 °C/W Thermal resistance Rthj-pcb(1) junction-pcb 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive IAS 1 A (pulse width limited by Tjmax) Single pulse avalanche energy EAS 240 mJ (starting Tj = 25 °C, ID = IAS, VDD = 50 V) DS4854 - Rev 4 page 2/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Electrical characteristics 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test condition Min. Typ. Max. Unit Drain-source V(BR)DSS breakdown voltage ID = 1 mA, VGS = 0 V 800 V VGS = 0 V, VDS = 800 V 10 µA Zero gate voltage drain IDSS current VGS = 0 V, VDS = 800 V, 100 µA TC = 125 °C(1) IGSS Gate body leakage current VDS = 0 V, VGS = ±30 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V Static drain-source on- RDS(on) resistance VGS = 10 V, ID = 3.25 A 0.95 1.05 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test condition Min. Typ. Max. Unit Ciss Input capacitance 620 Coss Output capacitance VVDGSS == 500 V V, f = 1 MHz, - 460 - pF Crss Reverse transfer capacitance 15 Rg Gate input resistance f = 1 MHz open drain - 7 - Ω Qg Total gate charge VDD = 640 V, ID = 6.5 A, 18 Qgs Gate-source charge VGS = 0 to 10 V (see Figure - 4 - nC 17. Test circuit for gate Qgd Gate-drain charge charge behavior) 11 Table 6. Switching times Symbol Parameter Test condition Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 3.25 A, 20 tr Rise time RG = 4.7 Ω, VGS = 10 V 8 td(off) Turn-off delay time (see Figure 16. Test circuit for - 35 - ns resistive load switching times and Figure 21. Switching time tf Fall time waveform) 10 Table 7. Source-drain diode Symbol Parameter Test condition Min. Typ. Max. Unit ISD Source-drain current 6.5 - A ISDM (1) Source-drain current (pulsed) 26 DS4854 - Rev 4 page 3/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Electrical characteristics Symbol Parameter Test condition Min. Typ. Max. Unit VSD (2) Forward on voltage ISD = 6.5 A, VGS = 0 V - 1.3 V trr Reverse recovery time ISD = 6.5 A, di/dt = 100 V 460 ns Qrr Reverse recovery charge VDD = 50 V (see Figure - 4 μC 18. Test circuit for inductive load switching and diode IRRM Reverse recovery current 17 A recovery times) trr Reverse recovery time ISD = 6.5 A, di/dt = 100 A/µs 680 ns Qrr Reverse recovery charge VDD = 50 V (see Figure - 6 μC 18. Test circuit for inductive load switching and diode IRRM Reverse recovery current 17 A recovery times) 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS4854 - Rev 4 page 4/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK and IPAK Figure 2. Thermal impedance for DPAK and IPAK K GC20460 100 10-1 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP K GC20940 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 t p (s) Figure 5. Safe operating area for TO-220 Figure 6. Thermal impedance for TO-220 DS4854 - Rev 4 page 5/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Electrical characteristics (curves) Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 12. Normalized gate threshold voltage vs Figure 11. Capacitance variations temperature 2 DS4854 - Rev 4 page 6/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Electrical characteristics (curves) Figure 13. Normalized on-resistance vs temperature Figure 14. Source-drain diode forward characteristics Figure 15. Normalized V vs temperature (BR)DSS 8 DS4854 - Rev 4 page 7/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Test circuits 3 Test circuits Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 + μF μF VDD VD VGS IG= CONST 100 Ω D.U.T. VGS RG D.U.T. pulse width 2200+ 2.7 kΩ VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load switching and Figure 19. Unclamped inductive load test circuit diode recovery times A A A L G DD.U.T. fdaiostde 100 µH VD 2200 3.3 25 Ω S B B B D µ3F.3 +1µ0F00 VDD ID +µF µF VDD G D.U.T. + RG S Vi D.U.T. _ pulse width AM01471v1 AM01470v1 Figure 21. Switching time waveform Figure 20. Unclamped inductive waveform ton toff V(BR)DSS td(on) tr td(off) tf VD 90% 90% IDM ID 0 10% VDS 10% VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1 DS4854 - Rev 4 page 8/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS4854 - Rev 4 page 9/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 DPAK (TO-252) type A2 package information 4.1 DPAK (TO-252) type A2 package information Figure 22. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev25 DS4854 - Rev 4 page 10/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 DPAK (TO-252) type A2 package information Table 8. DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0° 8° DS4854 - Rev 4 page 11/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 DPAK (TO-252) type A2 package information Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS4854 - Rev 4 page 12/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 DPAK (TO-252) packing information 4.2 DPAK (TO-252) packing information Figure 24. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 DS4854 - Rev 4 page 13/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A Tape slot G measured in core for at hub Full radius tape start 2.5mm min.width AM06038v1 Table 9. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DS4854 - Rev 4 page 14/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 IPAK (TO-251) type A package information 4.3 IPAK (TO-251) type A package information Figure 26. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS4854 - Rev 4 page 15/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 IPAK (TO-251) type A package information Table 10. IPAK (TO-251) type A package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° DS4854 - Rev 4 page 16/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 TO-220FP package information 4.4 TO-220FP package information Figure 27. TO-220FP package outline 7012510_Rev_12_B DS4854 - Rev 4 page 17/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 TO-220FP package information Table 11. TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DS4854 - Rev 4 page 18/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 TO-220 type A package information 4.5 TO-220 type A package information Figure 28. TO-220 type A package outline 0015988_typeA_Rev_21 DS4854 - Rev 4 page 19/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 TO-220 type A package information Table 12. TO-220 type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DS4854 - Rev 4 page 20/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Ordering information 5 Ordering information Table 13. Order codes Order code Marking Package Packing STD7NM80 D7NM80 DPAK Tape and reel STD7NM80-1 D7NM80 IPAK STF7NM80 F7NM80 TO-220FP Tube STP7NM80 P7NM80 TO-220 DS4854 - Rev 4 page 21/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Revision history Table 14. Document revision history Date Version Changes 22-Sep-2006 1 First release. 09-Oct-2007 2 Added new section: Electrical characteristics (curves). 02-Oct-2009 3 Corrected marking and description on first page. Updated Section 4 Package information. 20-Aug-2018 4 Minor text changes. DS4854 - Rev 4 page 22/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Contents Contents 1 Electrical ratings ..................................................................2 2 Electrical characteristics...........................................................3 2.1 Electrical characteristics (curves) .................................................5 3 Test circuits .......................................................................8 4 Package information...............................................................9 4.1 DPAK (TO-252) type A2 package information.......................................9 4.2 DPAK (TO-252) packing information..............................................12 4.3 IPAK (TO-251) type A package information........................................14 4.4 TO-220FP package information .................................................16 4.5 TO-220 type A package information..............................................18 5 Ordering information .............................................................21 Revision history .......................................................................22 DS4854 - Rev 4 page 23/24
STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS4854 - Rev 4 page 24/24
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