STD65N3LLH5 STU65N3LLH5 Ω N-channel 30 V, 0.0061 , 65 A, DPAK, IPAK STripFET™ V Power MOSFET Features Type V R max I DSS DS(on) D STD65N3LLH5 30 V 0.0069 Ω 65 A STU65N3LLH5 30 V 0.0073 Ω 65 A ■ RDS(on) * Qg industry benchmark 3 3 2 1 ■ Extremely low on-resistance R 1 DS(on) ■ Very low switching gate charge DPAK IPAK ■ High avalanche ruggedness ■ Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit. Table 1. Device summary Order code Marking Package Packaging STD65N3LLH5 65N3LLH5 DPAK Tape and reel STU65N3LLH5 65N3LLH5 IPAK Tube May 2011 Doc ID 17281 Rev 1 1/17 www.st.com 17

Contents STD65N3LLH5, STU65N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 17281 Rev 1

STD65N3LLH5, STU65N3LLH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V =0) 30 V DS GS V Gate-source voltage ± 22 V GS I Drain current (continuous) at T = 25 °C 65 A D C I Drain current (continuous) at T = 100 °C 46 A D C I (1) Drain current (pulsed) 260 A DM P Total dissipation at T = 25 °C 50 W TOT C Derating factor 0.3 W/°C E (2) Single pulse avalanche energy TBD mJ AS T Operating junction temperature j -55 to 175 °C T Storage temperature stg 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, Id = 32.5 A, Vdd = 12 V. Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 3 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W T Maximum lead temperature for soldering purpose 275 °C j Doc ID 17281 Rev 1 3/17

Electrical characteristics STD65N3LLH5, STU65N3LLH5 2 Electrical characteristics (T = 25 °C unless otherwise specified). CASE Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 30 V (BR)DSS Voltage D GS I Zero gate voltage drain VDS = 30 V 1 µA DSS current (VGS = 0) VDS = 30 V,Tc = 125 °C 10 µA Gate body leakage current IGSS (V = 0) VGS = ± 22 V ±100 nA DS V Gate threshold voltage V = V , I = 250 µA 1 1.8 3 V GS(th) DS GS D V = 10 V, I = 32.5 A GS D 0.0061 0.0069 Ω SMD version Static drain-source on VGS= 10 V, ID= 32.5 A 0.0065 0.0073 Ω R DS(on) resistance V = 4.5 V, I = 32.5 A GS D 0.0084 0.0093 Ω SMD version V = 4.5 V, I = 32.5 A 0.0088 0.0097 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance iss 1290 pF C Output capacitance V =25 V, f=1 MHz, oss DS - 240 - pF Crss Reverse transfer VGS=0 32 pF capacitance Q Total gate charge V =15 V, I = 65 A 8 nC g DD D Q Gate-source charge V =4.5 V - 3.6 - nC gs GS Q Gate-drain charge (Figure14) 3.4 nC gd f=1 MHz Gate DC Bias=0 R Intrinsic gate resistance test signal level = 20 mV 1.7 Ω g open drain 4/17 Doc ID 17281 Rev 1

STD65N3LLH5, STU65N3LLH5 Electrical characteristics Table 6. Switching on/off (resistive load) Symbol Parameter Test conditions Min. Typ. Max. Unit V =10 V, I = 65 A, DD D td(on) Turn-on delay time RG=4.7 Ω, VGS= 10 V - 8.6 - ns tr Rise time (Figure13 and 11.2 ns Figure18) V =10 V, I = 25 A, DD D td(off) Turn-off delay time RG=4.7 Ω, VGS= 10 V - 32.4 - ns tf Fall time (Figure13 and 6 ns Figure18) Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 65 A SD - I Source-drain current (pulsed)(1) 260 A SDM V Forward on voltage I =32.5 A, V =0 - 1.1 V SD SD GS trr Reverse recovery time ISD=32.5 A, 22 ns Qrr Reverse recovery charge di/dt =100 A/µs, - 15 nC IRRM Reverse recovery current VDD=20 V, (Figure15) 1.4 A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5%. Doc ID 17281 Rev 1 5/17

Electrical characteristics STD65N3LLH5, STU65N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID AM06486v2 (A) Tj=150°C Tc=25°C Single pulse 100 OpeLriatmiitoen di nb ty hims aaxr eRa DiSs(on) 100µs 1ms 10 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:24)(cid:24)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:24)(cid:25)(cid:86)(cid:18) (cid:41)(cid:36) (cid:41)(cid:36)(cid:8)(cid:33)(cid:9) (cid:8)(cid:33)(cid:9) (cid:17)(cid:24)(cid:16) (cid:54)(cid:39)(cid:51)(cid:29)(cid:17)(cid:16)(cid:54) (cid:17)(cid:18)(cid:16) (cid:17)(cid:22)(cid:16) (cid:22)(cid:54) (cid:17)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:29)(cid:19)(cid:54) (cid:17)(cid:20)(cid:16) (cid:21)(cid:54) (cid:17)(cid:18)(cid:16) (cid:24)(cid:16) (cid:17)(cid:16)(cid:16) (cid:22)(cid:16) (cid:24)(cid:16) (cid:20)(cid:54) (cid:22)(cid:16) (cid:20)(cid:16) (cid:20)(cid:16) (cid:18)(cid:16) (cid:18)(cid:16) (cid:19)(cid:54) (cid:16) (cid:16) (cid:16) (cid:17) (cid:18) (cid:19) (cid:20) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) (cid:16) (cid:18) (cid:20) (cid:22) (cid:24) (cid:54)(cid:39)(cid:51)(cid:8)(cid:54)(cid:9) Figure 6. Normalized B vs temperature Figure 7. Static drain-source on resistance VDSS (cid:34)(cid:54)(cid:36)(cid:51)(cid:51)(cid:8)(cid:78)(cid:79)(cid:82)(cid:77)(cid:9) (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:25)(cid:16)(cid:86)(cid:17) RD(Sm(oΩn)) AM06491v2 (cid:17)(cid:14)(cid:17)(cid:18) 14 VGS=10V 12 (cid:17)(cid:14)(cid:16)(cid:24) 10 (cid:17)(cid:14)(cid:16)(cid:20) 8 6 (cid:17)(cid:14)(cid:16)(cid:16) 4 (cid:16)(cid:14)(cid:25)(cid:22) 2 (cid:16)(cid:14)(cid:25)(cid:18) 0 (cid:13)(cid:21)(cid:21) (cid:13)(cid:21) (cid:20)(cid:21) (cid:25)(cid:21) (cid:17)(cid:20)(cid:21) (cid:52)(cid:42)(cid:8)(cid:160)(cid:35)(cid:9) 3 5 7 9 11 13 15 17 ID(A) 6/17 Doc ID 17281 Rev 1

STD65N3LLH5, STU65N3LLH5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations (cid:54)(cid:39)(cid:51) (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:25)(cid:18)(cid:86)(cid:17) (cid:35) (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:25)(cid:19)(cid:86)(cid:17) (cid:8)(cid:54)(cid:9) (cid:8)(cid:80)(cid:38)(cid:9) (cid:17)(cid:18) (cid:54)(cid:36)(cid:36)(cid:29)(cid:17)(cid:21)(cid:54) (cid:17)(cid:22)(cid:16)(cid:16) (cid:41)(cid:36)(cid:29)(cid:17)(cid:23)(cid:33) (cid:17)(cid:16) (cid:17)(cid:20)(cid:16)(cid:16) (cid:35)(cid:73)(cid:83)(cid:83) (cid:17)(cid:18)(cid:16)(cid:16) (cid:24) (cid:17)(cid:16)(cid:16)(cid:16) (cid:22) (cid:24)(cid:16)(cid:16) (cid:22)(cid:16)(cid:16) (cid:20) (cid:20)(cid:16)(cid:16) (cid:35)(cid:79)(cid:83)(cid:83) (cid:18) (cid:18)(cid:16)(cid:16) (cid:35)(cid:82)(cid:83)(cid:83) (cid:16) (cid:16) (cid:16) (cid:18) (cid:20) (cid:22) (cid:24) (cid:17)(cid:16) (cid:17)(cid:18) (cid:49)(cid:71)(cid:8)(cid:78)(cid:35)(cid:9) (cid:16) (cid:17)(cid:16) (cid:18)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature (cid:54)(cid:39)(cid:51)(cid:8)(cid:84)(cid:72)(cid:9) (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:25)(cid:20)(cid:86)(cid:17) (cid:50)(cid:36)(cid:51)(cid:8)(cid:79)(cid:78)(cid:9) (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:25)(cid:21)(cid:86)(cid:17) (cid:8)(cid:78)(cid:79)(cid:82)(cid:77)(cid:9) (cid:8)(cid:78)(cid:79)(cid:82)(cid:77)(cid:9) (cid:17)(cid:14)(cid:18) (cid:17)(cid:14)(cid:24) (cid:17)(cid:14)(cid:16) (cid:17)(cid:14)(cid:22) (cid:16)(cid:14)(cid:24) (cid:17)(cid:14)(cid:18) (cid:16)(cid:14)(cid:22) (cid:16)(cid:14)(cid:24) (cid:16)(cid:14)(cid:20) (cid:16)(cid:14)(cid:20) (cid:13)(cid:21)(cid:21) (cid:13)(cid:21) (cid:20)(cid:21) (cid:25)(cid:21) (cid:17)(cid:20)(cid:21) (cid:52)(cid:42)(cid:8)(cid:160)(cid:35)(cid:9) (cid:13)(cid:21)(cid:21) (cid:13)(cid:21) (cid:20)(cid:21) (cid:25)(cid:21) (cid:17)(cid:20)(cid:21) (cid:52)(cid:42)(cid:8)(cid:160)(cid:35)(cid:9) Figure 12. Source-drain diode forward characteristics (cid:54)(cid:51)(cid:36) (cid:33)(cid:45)(cid:16)(cid:22)(cid:20)(cid:25)(cid:22)(cid:86)(cid:17) (cid:8)(cid:54)(cid:9) (cid:52)(cid:42)(cid:29)(cid:13)(cid:21)(cid:21)(cid:160)(cid:35) (cid:16)(cid:14)(cid:25) (cid:16)(cid:14)(cid:24) (cid:52)(cid:42)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:16)(cid:14)(cid:23) (cid:16)(cid:14)(cid:22) (cid:16)(cid:14)(cid:21) (cid:52)(cid:42)(cid:29)(cid:17)(cid:23)(cid:21)(cid:160)(cid:35) (cid:16)(cid:14)(cid:20) (cid:19) (cid:21) (cid:23) (cid:25) (cid:17)(cid:17) (cid:17)(cid:19) (cid:17)(cid:21) (cid:17)(cid:23) (cid:41)(cid:51)(cid:36)(cid:8)(cid:33)(cid:9) Doc ID 17281 Rev 1 7/17

Test circuits STD65N3LLH5, STU65N3LLH5 3 Test circuits Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/17 Doc ID 17281 Rev 1

STD65N3LLH5, STU65N3LLH5 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17281 Rev 1 9/17

Package mechanical data STD65N3LLH5, STU65N3LLH5 Table 8. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Figure 19. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters 10/17 Doc ID 17281 Rev 1

STD65N3LLH5, STU65N3LLH5 Package mechanical data Figure 20. DPAK (TO-252) drawing 0068772_G Doc ID 17281 Rev 1 11/17

Package mechanical data STD65N3LLH5, STU65N3LLH5 Table 9. IPAK (TO-251) mechanical data mm. Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10o 12/17 Doc ID 17281 Rev 1

STD65N3LLH5, STU65N3LLH5 Package mechanical data Figure 21. IPAK (TO-251) drawing 0068771_H AM09214V1 Doc ID 17281 Rev 1 13/17

Packaging mechanical data STD65N3LLH5, STU65N3LLH5 5 Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 14/17 Doc ID 17281 Rev 1

STD65N3LLH5, STU65N3LLH5 Packaging mechanical data Figure 22. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 23. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 17281 Rev 1 15/17

Revision history STD65N3LLH5, STU65N3LLH5 6 Revision history T able 11. Document revision history Date Revision Changes 19-May-2011 1 First release. 16/17 Doc ID 17281 Rev 1

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