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  • 型号: STD60N55F3
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STD60N55F3产品简介:

ICGOO电子元器件商城为您提供STD60N55F3由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STD60N55F3价格参考¥6.44-¥6.44。STMicroelectronicsSTD60N55F3封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 55V 80A(Tc) 110W(Tc) DPAK。您可以下载STD60N55F3参考资料、Datasheet数据手册功能说明书,资料中有STD60N55F3 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 55V 80A DPAKMOSFET N Ch 55V 6.5mohm 80A

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

80 A

Id-连续漏极电流

80 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STD60N55F3STripFET™ III

数据手册

点击此处下载产品Datasheet

产品型号

STD60N55F3

Pd-PowerDissipation

110 W

Pd-功率耗散

110 W

RdsOn-Drain-SourceResistance

8.5 mOhms

RdsOn-漏源导通电阻

8.5 mOhms

Vds-Drain-SourceBreakdownVoltage

55 V

Vds-漏源极击穿电压

55 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

50 ns

下降时间

11.5 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

2200pF @ 25V

不同Vgs时的栅极电荷(Qg)

45nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

8.5 毫欧 @ 32A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

D-Pak

其它名称

497-7972-6

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF165998?referrer=70071840

典型关闭延迟时间

35 ns

功率-最大值

110W

包装

Digi-Reel®

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻

8.5 mOhms

封装

Reel

封装/外壳

TO-252-3,DPak(2 引线+接片),SC-63

封装/箱体

DPAK-2

工厂包装数量

2500

晶体管极性

N-Channel

最大工作温度

+ 175 C

最小工作温度

- 55 C

标准包装

1

汲极/源极击穿电压

55 V

漏极连续电流

80 A

漏源极电压(Vdss)

55V

电流-连续漏极(Id)(25°C时)

80A (Tc)

系列

STD60N55F3

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 Ω 2 2 N-channel 55 V, 6.5 m , 80 A, DPAK, IPAK, D PAK, I PAK, TO-220 TO-220FP STripFET™ III Power MOSFET Features Type V R I Pw DSS DS(on) D 3 3 STB60N55F3 55V <8.5mΩ 80A 110W 3 1 12 2 1 DPAK STD60N55F3 55V <8.5mΩ 80A 110W IPAK TO-220FP STF60N55F3 55V <8.5mΩ 42A 30W STI60N55F3 55V <8.5mΩ 80A 110W STP60N55F3 55V <8.5mΩ 80A 110W STU60N55F3 55V <8.5mΩ 80A 110W 1 3 123 3 ■ Standard threshold drive D²PAK I²PAK 1 2 TO-220 ■ 100% avalanche tested Application Figure 1. Internal schematic diagram ■ Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Table 1. Device summary Order codes Marking Package Packaging STB60N55F3 60N55F3 D²PAK Tape and reel STD60N55F3 60N55F3 DPAK Tape and reel STF60N55F3 60N55F3 TO-220FP Tube STI60N55F3 60N55F3 I²PAK Tube STP60N55F3 60N55F3 TO-220 Tube STU60N55F3 60N55F3 IPAK Tube April 2009 Doc ID 13242 Rev 4 1/20 www.st.com 20

Contents STx60N55F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 Doc ID 13242 Rev 4

STx60N55F3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value DPAK/D²PAK Symbol Parameter Unit TO-220 TO-220FP IPAK/I²PAK VDS Drain-source voltage (VGS=0) 55 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 80 42 A ID Drain current (continuous) at TC = 100°C 56 30 A I (1) Drain current (pulsed) 320 168 A DM PTOT Total dissipation at TC = 25°C 110 30 W Derating factor 0.73 0.2 W/°C dv/dt (2) Peak diode recovery voltage slope 11 V/ns E (3) Single pulse avalanche energy 390 mJ AS Insulation withstand voltage (RMS) from all three VISO leads to external heat sink (t=1s;T =25°C) 2500 V C Tj Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Pulse width limited by safe operating area 2. I < 80 A, di/dt < 300A/µs, V < V Tj < Tjmax SD DD (BR)DSS. 3. Starting Tj=25°C, Id=32 A, Vdd= 25 V Table 3. Thermal resistance Value Symbol Parameter Unit IPAK DPAK D²PAK TO-220 TO-220FP I²PAK Thermal resistance junction- Rthj-case 1.36 5 °C/W case max Thermal resistance junction- Rthj-pcb (1) 50 35 °C/W pcb max Thermal resistance junction- Rthj-a ambient max 100 62.5 °C/W Maximum lead temperature Tl for soldering purpose 275 300 °C 1. When mounted on FR-4 board of 1inch², 2oz Cu Doc ID 13242 Rev 4 3/20

Electrical characteristics STx60N55F3 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage ID = 250µA, VGS= 0 55 V Zero gate voltage drain VDS = Max rating, 10 µA I DSS current (VGS = 0) VDS = Max rating,Tc = 125°C 100 µA Gate body leakage current IGSS (V = 0) VGS = ±20V ±200 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 4 V Static drain-source on RDS(on) resistance VGS= 10V, ID= 32A 6.5 8.5 mΩ Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS =25V, ID=32A - 50 S Ciss Input capacitance 2200 pF Coss Output capacitance VDS = 25V, f = 1MHz, VGS=0 - 500 pF C Reverse transfer capacitance 25 pF rss Qg Total gate charge VDD = 27V, ID = 65A 33.5 45 nC Qgs Gate-source charge VGS =10V - 12.5 nC Qgd Gate-drain charge (see Figure 16) 9.5 nC 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit V = 27V, I = 32A, td(on) Turn-on delay time RDD= 4.7Ω, VD = 10V - 20 - ns t Rise time G GS 50 ns r (see Figure 18) V = 27V, I = 32A, td(off) Turn-off delay time RDD= 4.7Ω, VD = 10V - 35 - ns tf Fall time G GS 11.5 ns (see Figure 18) 4/20 Doc ID 13242 Rev 4

STx60N55F3 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Packages Min. Typ. Max. Unit ISD Source-drain current DPAK-D2PAK- 80 A I2PAK-I2PAK- - I (1) Source-drain current (pulsed) 320 A SDM TO-220 ISD Source-drain current 42 A TO-220FP - I (1) Source-drain current (pulsed) 168 A SDM VSD Forward on voltage ISD = 65A, VGS = 0 - 1.5 V I = 65A, V = 30V trr Reverse recovery time SD DD 47 ns di/dt = 100A/µs, Qrr Reverse recovery charge - 87 nC Tj = 150°C I Reverse recovery current 3.7 A RRM (see Figure 17) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13242 Rev 4 5/20

Electrical characteristics STx60N55F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 D²PAK / IPAK / I²PAK / DPAK D²PAK / IPAK / I²PAK / DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP 6/20 Doc ID 13242 Rev 4

STx60N55F3 Electrical characteristics Figure 6. Output characteristics Figure 7. Transfer characteristics Figure 8. Normalized BV vs temperature Figure 9. Static drain-source on resistance DSS Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Doc ID 13242 Rev 4 7/20

Electrical characteristics STx60N55F3 Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs vs temperature temperature Figure 14. Source-drain diode forward characteristics 8/20 Doc ID 13242 Rev 4

STx60N55F3 Test circuits 3 Test circuits Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform Doc ID 13242 Rev 4 9/20

Package mechanical data STx60N55F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/20 Doc ID 13242 Rev 4

STx60N55F3 Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 Doc ID 13242 Rev 4 11/20

Package mechanical data STx60N55F3 D²PAK (TO-263) mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 0.295 E 10 10.40 0.394 0.409 E1 8.50 0.334 e 2.54 0.1 e1 4.88 5.28 0.192 0.208 H 15 15.85 0.590 0.624 J1 2.49 2.69 0.099 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.05 0.055 L2 1.30 1.75 0.051 0.069 R 0.4 0.016 V2 0° 8° 0° 8° 0079457_M 12/20 Doc ID 13242 Rev 4

STx60N55F3 Package mechanical data TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0 o 8o 0068772_G Doc ID 13242 Rev 4 13/20

Package mechanical data STx60N55F3 TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 14/20 Doc ID 13242 Rev 4

STx60N55F3 Package mechanical data TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 Doc ID 13242 Rev 4 15/20

Package mechanical data STx60N55F3 TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_J 16/20 Doc ID 13242 Rev 4

STx60N55F3 Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 Doc ID 13242 Rev 4 17/20

Packaging mechanical data STx60N55F3 D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 18/20 Doc ID 13242 Rev 4

STx60N55F3 Revision history 6 Revision history T able 8. Document revision history Date Revision Changes 09-Feb-2007 1 First release 22-Feb-2007 2 Description has been updated 07-Mar-2007 3 The Figure2, Figure4, Figure9 have been changed Added device in I2PAK 17-Apr-2009 4 Updated all mechanical data Doc ID 13242 Rev 4 19/20

STx60N55F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 20/20 Doc ID 13242 Rev 4

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STB60N55F3 STF60N55F3 STP60N55F3 STD60N55F3 STU60N55F3