STD5N52U, STF5N52U N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™ Power MOSFETs in DPAK and TO-220FP packages - Datasheet production data Features Order codes V R max I P DS DS(on) D TOT STD5N52U 70 W 525 V 1.5 Ω 4.4 A TAB STF5N52U 25 W 3 • Outstanding dv/dt capability 1 3 2 • Gate charge minimized DPAK 1 TO-220FP • Very low intrinsic capacitances • Very low R DS(on) • Extremely low t rr Applications Figure 1. Internal schematic diagram D(2, TAB) • Switching applications Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, G(1) which combines the advantages of reduced on- resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STD5N52U DPAK Tape and reel 5N52U STF5N52U TO-220FP Tube April 2014 DocID15684 Rev 3 1/19 This is information on a product in full production. www.st.com

Contents STD5N52U, STF5N52U Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 DPAK, STD5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220FP, STF5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID15684 Rev 3

STD5N52U, STF5N52U Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP V Gate- source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 4.4 A D C I Drain current (continuous) at T = 100 °C 2.8 A D C I (1) Drain current (pulsed) 17.6 A DM P Total dissipation at T = 25 °C 70 25 W TOT C Avalanche current, repetitive or not-repetitive I 4.4 A AR (pulse width limited by T max) J Single pulse avalanche energy E 170 mJ AS (starting T = 25 °C, I = I , V = 50 V) J D AR DD dv/dt(2) Peak diode recovery voltage slope 20 V/ns Gate-source human body model (R = 1.5 kΩ, ESD 2.8 kV C = 100 pF) Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t=1 s;T =25 °C) C T Operating junction temperature °C J -55 to 150 T Storage temperature °C stg 1. Pulse width limited by safe operating area. 2. I ≤ 4.4 A, di/dt ≤ 400 A/μs, peak V ≤ V SD DS (BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220FP R Thermal resistance junction-case max 1.79 5 °C/W thj-case R Thermal resistance junction-ambient max 62.5 °C/W thj-amb R (1) Thermal resistance junction-pcb 50 °C/W thj-pcb 1. When mounted on 1 inch² FR-4 board, 2oz Cu DocID15684 Rev 3 3/19 19

Electrical characteristics STD5N52U, STF5N52U 2 Electrical characteristics (Tcase =25 °C unless otherwise specified). Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V breakdown voltage I = 1 mA 525 V (BR)DSS D (V = 0) GS Zero gate voltage VDS = 525 V 10 μA I DSS drain current (VGS = 0) VDS = 525 V, TC=125 °C 500 μA Gate-body leakage I V = 20 V ±10 μA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 50 μA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on- R V = 10 V, I = 2.2 A 1.25 1.5 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 529 - pF iss C Output capacitance V = 25 V, f = 1 MHz, - 71 - pF oss DS V = 0 Reverse transfer GS C - 13.4 - pF rss capacitance Equivalent C (1) capacitance time V = 0 to 420 V, V = 0 - 11 - pF o(tr) DS GS related R Gate input resistance f=1 MHz open drain - 6 - Ω g Q Total gate charge - 16.9 - nC g V = 416 V, I = 4.4 A, DD D Q Gate-source charge V = 10 V - 4.2 - nC gs GS (see Figure 17) Q Gate-drain charge - 8.4 - nC gd 1. C time related is defined as a constant equivalent capacitance giving the same charging time as C oss eq. oss when V increases from 0 to 80% V DS DSS 4/19 DocID15684 Rev 3

STD5N52U, STF5N52U Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time - 11.4 - ns d(on) V = 260 V, I = 2.2 A, t Rise time DD D - 13.6 - ns r R = 4.7 Ω, V = 10 V G GS t Turn-off-delay time - 23.1 - ns d(off) (see Figure 16) t Fall time - 15 - ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 4.4 A SD I (1) Source-drain current (pulsed) - 17.6 A SDM V (2) Forward on voltage I = 4.4 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time - 55 ns rr I = 4.4 A, di/dt = 100 A/μs SD Q Reverse recovery charge V = 60 V - 95 nC rr DD (see Figure 18) I Reverse recovery current - 3.5 A RRM t Reverse recovery time - 120 ns rr I = 4.4 A, di/dt = 100 A/μs SD Q Reverse recovery charge V = 60 V T = 150 °C - 266 nC rr DD J (see Figure 18) I Reverse recovery current - 4.5 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V Gate-source breakdown voltage I = ± 1mA, I =0 30 - - V (BR)GSO GS D The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. DocID15684 Rev 3 5/19 19

Electrical characteristics STD5N52U, STF5N52U 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/19 DocID15684 Rev 3

STD5N52U, STF5N52U Electrical characteristics Figure 8. Normalized V vs temperature Figure 9. Static drain-source on-resistance (BR)DSS ((BBRR)) Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs temperature temperature DocID15684 Rev 3 7/19 19

Electrical characteristics STD5N52U, STF5N52U Figure 14. Source-drain diode forward Figure 15. Maximum avalanche energy vs characteristics temperature 8/19 DocID15684 Rev 3

STD5N52U, STF5N52U Test circuits 3 Test circuits Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID15684 Rev 3 9/19 19

Package mechanical data STD5N52U, STF5N52U 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/19 DocID15684 Rev 3

STD5N52U, STF5N52U Package mechanical data 4.1 DPAK, STD5N52U Figure 22. DPAK (TO-252) type A drawing (cid:19)(cid:19)(cid:25)(cid:27)(cid:26)(cid:26)(cid:21)(cid:66)(cid:49) DocID15684 Rev 3 11/19 19

Package mechanical data STD5N52U, STF5N52U Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R 0.20 V2 0° 8° 12/19 DocID15684 Rev 3

STD5N52U, STF5N52U Package mechanical data Figure 23. DPAK (TO-252) type A footprint (a) (cid:41)(cid:51)(cid:19)(cid:19)(cid:25)(cid:27)(cid:26)(cid:26)(cid:21)(cid:66)(cid:49) a. All dimensions are in millimeters DocID15684 Rev 3 13/19 19

Package mechanical data STD5N52U, STF5N52U 4.2 TO-220FP, STF5N52U Figure 24. TO-220FP drawing 7012510_Rev_K_B 14/19 DocID15684 Rev 3

STD5N52U, STF5N52U Package mechanical data Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID15684 Rev 3 15/19 19

Packaging mechanical data STD5N52U, STF5N52U 5 Packaging mechanical data Figure 25. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 16/19 DocID15684 Rev 3

STD5N52U, STF5N52U Packaging mechanical data Figure 26. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID15684 Rev 3 17/19 19

Revision history STD5N52U, STF5N52U 6 Revision history Table 12. Document revision history Date Revision Changes 06-May-2009 1 First release. – Inserted new device in I2PAK. – Updated tables 1, 2 and 3 with the new package. 28-Sep-2011 2 – Updated Section4: Package mechanical data with the new package and Section5: Packaging mechanical data. – Minor text changes. – Updated Section4.1: DPAK, STD5N52U – Modified: Q unit in Table7 rr 24-Apr-2014 3 – Modified: Figure8 and 11 – The part number STI5N52U has been moved to a separate datasheet 18/19 DocID15684 Rev 3

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