STD5N20L Ω N-CHANNEL 200V - 0.65 - 5A DPAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5 A 33 W (cid:1) TYPICAL RDS(on) = 0.65 Ω @ 5V (cid:1) CONDUCTION LOSSES REDUCED (cid:1) LOW INPUT CAPACIATNCE (cid:1) LOW THRESHOLD DEVICE 3 DESCRIPTION 1 The STD5N20L utilizes the latest advanced de- sign rules of ST’s proprietary STripFET™ technol- DPAK ogy. This is suitable for the most demanding DC Motor Control and lighting application. Figure 2: Internal Schematic Diagram APPLICATIONS (cid:1) UPS AND MOTOR CONTROL (cid:1) LIGHTING Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STD5N20LT4 D5N20L DPAK TAPE & REEL Rev. 3 September 2004 1/10 NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532

STD5N20L Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 200 V VGS Gate- source Voltage ±20 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3.6 A IDM ((cid:1)) Drain Current (pulsed) 20 A PTOT Total Dissipation at TC = 25°C 33 W Derating Factor 0.27 W/°C Tstg Storage Temperature –55 to 150 °C Tj Operating Junction Temperature ((cid:1)) Pulse width limited by safe operating area Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 3.75 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID = 250 µA, VGS = 0 200 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C 10 µA IGSS Gate-body Leakage VGS = ±20V ±100 nA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 1 2.5 V RDS(on) Static Drain-source On VGS = 5 V, ID = 2.5 A 0.65 0.7 Ω Resistance 2/10

STD5N20L Table 6: Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (2) Forward Transconductance VDS = 15 V, ID = 5 A 6.5 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 242 pF Coss Output Capacitance 44 pF Crss Reverse Transfer 6 pF Capacitance td(on) Turn-on Delay Time VDD = 100 V, ID = 2.5 A 11.5 ns tr Rise Time RG = 4.7Ω, VGS = 5V 21.5 ns td(off) Turn-off Delay Time (Resistive Load see Figure 14) 14 ns tf Fall Time 15.5 ns Qg Total Gate Charge VDD = 160 V, ID = 5 A, 5 6 nC Qgs Gate-Source Charge VGS = 5V 1.5 nC Qgd Gate-Drain Charge 3 nC Table 7: Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5 A ISDM (*) Source-drain Current (pulsed) 20 A VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 5 A, di/dt = 100 A/µs, 93 ns Qrr Reverse Recovery Charge VDD = 100 V, Tj = 25°C 237 nC IRRM Reverse Recovery Current (see test circuit, see Figure 15) 5.1 A trr Reverse Recovery Time ISD = 5 A, di/dt = 100 A/µs, 97 ns Qrr Reverse Recovery Charge VDD = 100 V, Tj = 150°C 286 nC IRRM Reverse Recovery Current (see test circuit, see Figure 15) 5.9 A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Starting Tj =25 °C, Id = 5 A, VDD = 50 V (*) Pulse width limited by safe operating area 3/10

STD5N20L Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/10

STD5N20L Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Volt- Figure 13: Normalized On Resistance vs Tem- age vs Temperature perature Figure 11: Source-Drain Diode Forward Char- acteristics 5/10

STD5N20L Figure 14: Switching Times Test Circuit For Figure 16: Gate Charge Test Circuit Resistive Load Figure 15: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/10

STD5N20L TO-252 (DPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 7/10

STD5N20L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 * on sales type 8/10

STD5N20L Table 8: Revision History Date Revision Description of Changes 08-June-2004 2 New Stylesheet. Datasheet according to PCN DSG-TRA/04/532 20-Sep-2004 3 Changes on Table 3, and on Figure 3. 9/10

STD5N20L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10

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