STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code VDS RDS(on) max. ID STD3NK80Z-1 800 V 4.5 Ω 2.5 A STD3NK80ZT4 800 V 4.5 Ω 2.5 A STF3NK80Z 800 V 4.5 Ω 2.5 A STP3NK80Z 800 V 4.5 Ω 2.5 A  Extremely high dv/dt capability  100% avalanche tested  Gate charge minimized  Zener-protected Applications Figure 1: Internal schematic diagram  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including the revolutionary MDmesh™ products. Table 1: Device summary Order code Marking Package Packaging STD3NK80Z-1 D3NK80Z IPAK Tube STD3NK80ZT4 D3NK80Z DPAK Tape and reel STF3NK80Z F3NK80Z TO-220FP Tube STP3NK80Z P3NK80Z TO-220 Tube April 2017 DocID9565 Rev 7 1/29 This is information on a product in full production. www.st.com

Contents STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 IPAK (TO-251) type A package information .................................... 10 4.2 DPAK package information ............................................................. 12 4.2.1 DPAK (TO-252) type A package information ................................... 12 4.2.2 DPAK (TO-252) type C2 package information ................................. 15 4.2.3 DPAK (TO-252) type E package information ................................... 18 4.2.4 DPAK (TO-252) packing information ................................................ 20 4.3 TO-220FP package information ...................................................... 22 4.4 TO-220 package information ........................................................... 24 4.4.1 TO-220 type A package information ................................................. 24 4.4.2 TO-220 type H package information ................................................ 26 5 Revision history ............................................................................ 28 2/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Electrical ratings STP3NK80Z 1 Electrical ratings Table 2: Absolute maximum ratings Value Symbol Parameter TO-220, Unit DPAK, TO-220FP IPAK VDS Drain-source voltage 800 V VGS Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 2.5 2.5(1) A ID Drain current (continuous) at TC = 100 °C 1.57 1.57(1) A IDM(2) Drain current (pulsed) 10 10(1) A PTOT Total dissipation at TC = 25 °C 70 25 W Gate-source, human body model, ESD 2 kV R = 1.5 kΩ, C = 100 pF dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all three VISO leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Tj Operation junction temperature range Notes: (1)This value is limited by package. (2)Pulse width is limited by safe operating area. (3)ISD ≤ 2.5 A, di/dt ≤ 200 A/μs, VDS(peak) < V(BR)DSS, VDD = 640 V Table 3: Thermal data Value Symbol Parameter Unit TO-220 TO-220FP DPAK IPAK Rthj-case Thermal resistance junction-case 1.78 5 1.78 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 100 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 50 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive IAR (pulse width limited by TJ max) 2.5 A EAS Single pulse avalanche energy (starting TJ =25 °C, ID = IAR, VDD= 50 V) 170 mJ DocID9565 Rev 7 3/29

Electrical characteristics STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage VGS = 0 V, ID = 1 mA 800 V VGS = 0 V, VDS = 800 V 1 µA Zero gate voltage drain IDSS current VGS = 0 V, VDS = 800 V, 50 µA TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V Static drain-source RDS(on) on- resistance VGS = 10 V, ID = 1.25 A 3.8 4.5 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 485 - pF Coss Output capacitance VGS = 0 V, VDS = 25 V, - 57 - pF f = 1 MHz Crss Reverse transfer capacitance - 11 - pF Coss eq(1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 640 V - 22 - pF Qg Total gate charge VDD = 640 V, ID = 2.5 A, - 19 - nC Qgs Gate-source charge VGS = 0 to 10 V - 3.2 - nC (see Figure 17: "Test circuit Qgd Gate-drain charge for gate charge behavior") - 10.8 - nC Notes: (1)Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 1.25 A, RG = 4.7 - 17 - ns tr Rise time Ω, VGS =10 V - 27 - ns (see Figure 16: "Test circuit for td(off) Turn-off delay time resistive load switching times" and - 36 - ns Figure 21: "Switching time tf Fall time waveform") - 40 - ns 4/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Electrical characteristics STP3NK80Z Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 2.5 A Source-drain current ISDM(1) (pulsed) - 10 A VSD(2) Forward on voltage ISD = 2.5 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs - 384 ns Qrr Reverse recovery charge VDD = 50 V - 1.6 μC (see Figure 18: "Test circuit for inductive load switching IRRM Reverse recovery current - 8.4 A and diode recovery times") trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, - 474 ns Qrr Reverse recovery charge VDD = 50 V , TJ = 150 °C - 2.1 μC (see Figure 18: "Test circuit for inductive load switching IRRM Reverse recovery current - 8.8 A and diode recovery times") Notes: (1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%. (2)Pulse width is limited by safe operating area. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit Gate-source breakdown V(BR)GSO voltage IGS = ±1 mA (open drain) 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DocID9565 Rev 7 5/29

Electrical characteristics STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 2.1 Electrical characteristics (curves) Figure 2: Safe operating area for Figure 3: Thermal impedance for TO-220, DPAK, IPAK TO-220, DPAK, IPAK CG20930 K δ = 0.5 δ = 0.2 δ = 0.1 10-1 ZZ == kk RR δδ t th=h= tt//ƬƬtthhjj--CC(cid:3)(cid:3) pp δ = 0.05 δ = 0.02 δ = 0.01 tt SINGLE PULSE ppƬƬ 10-2 10-5 10-4 10-3 10-2 10-1 t(s) p Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP Figure 6: Output characteristics Figure 7: Transfer characteristics 6/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Electrical characteristics STP3NK80Z Figure 8: Static drain-source on-resistance Figure 9: Gate charge vs. gate-source voltage Figure 10: Capacitance variations Figure 11: Normalized gate threshold voltage vs. temperature Figure 12: Normalized on-resistance vs. Figure 13: Source-drain diode forward temperature characteristics DocID9565 Rev 7 7/29

Electrical characteristics STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Figure 14: Normalized V(BR)DSS vs. temperature Figure 15: Maximum avalanche energy vs. temperature 8/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Test circuits STP3NK80Z 3 Test circuits Figure 16: Test circuit for resistive load Figure 17: Test circuit for gate charge switching times behavior Figure 18: Test circuit for inductive load Figure 19: Unclamped inductive load test switching and diode recovery times circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform DocID9565 Rev 7 9/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 IPAK (TO-251) type A package information Figure 22: IPAK (TO-251) type A package outline 10/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Table 10: IPAK (TO-251) type A package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° DocID9565 Rev 7 11/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 4.2 DPAK package information 4.2.1 DPAK (TO-252) type A package information Figure 23: DPAK (TO-252) type A package outline 12/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Table 11: DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0° 8° DocID9565 Rev 7 13/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Figure 24: DPAK (TO-252) type A recommended footprint (dimensions are in mm) 14/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z 4.2.2 DPAK (TO-252) type C2 package information Figure 25: DPAK (TO-252) type C2 package outline 0068772_C2_22 DocID9565 Rev 7 15/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Table 12: DPAK (TO-252) type C2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.10 5.60 E 6.50 6.60 6.70 E1 5.20 5.50 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 2.90 REF L2 0.90 1.25 L3 0.51 BSC L4 0.60 0.80 1.00 L6 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° 16/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Figure 26: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm) FP_0068772_22 DocID9565 Rev 7 17/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 4.2.3 DPAK (TO-252) type E package information Figure 27: DPAK (TO-252) type E package outline 18/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Table 13: DPAK (TO-252) type E mechanical data mm Dim. Min. Typ. Max. A 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 6.73 E1 4.32 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 2.74 L2 0.89 1.27 L4 1.02 Figure 28: DPAK (TO-252) type E recommended footprint (dimensions are in mm) DocID9565 Rev 7 19/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 4.2.4 DPAK (TO-252) packing information Figure 29: DPAK (TO-252) tape outline 20/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Figure 30: DPAK (TO-252) reel outline Table 14: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID9565 Rev 7 21/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 4.3 TO-220FP package information Figure 31: TO-220FP package outline 7012510_Rev_12_B 22/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Table 15: TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID9565 Rev 7 23/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 4.4 TO-220 package information 4.4.1 TO-220 type A package information Figure 32: TO-220 type A package outline 24/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Table 16: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID9565 Rev 7 25/29

Package information STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 4.4.2 TO-220 type H package information Figure 33: TO-220 type H package outline 0015988_H_21 26/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, Package information STP3NK80Z Table 17: TO-220 type H package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.45 4.50 A1 1.22 1.32 A2 2.49 2.59 2.69 A3 1.17 1.27 1.37 b 0.78 0.87 b2 1.25 1.34 b4 1.20 1.29 b6 1.50 b7 1.45 c 0.49 0.56 D 15.40 15.50 15.60 D1 9.05 9.15 9.25 E 10.08 10.18 10.28 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 H1 6.25 6.35 6.45 L 13.20 13.40 13.60 L1 3.50 3.70 3.90 L2 16.30 16.40 16.50 L3 28.70 28.90 29.10 ∅P 3.75 3.80 3.85 Q 2.70 2.80 2.90 DocID9565 Rev 7 27/29

Revision history STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 5 Revision history Table 18: Document revision history Date Revision Changes 09-Sep-2004 3 Complete document 10-Aug-2006 4 New template, no content change 26-Feb-2009 5 Updated mechanical data 07-Sep-2009 6 VESD(G-S) value has been corrected Updated Section 1: "Electrical ratings", Section 2: "Electrical 06-Apr-2017 7 characteristics" and Section 4: "Package information". Minor text changes 28/29 DocID9565 Rev 7

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID9565 Rev 7 29/29

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