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STD3N62K3产品简介:
ICGOO电子元器件商城为您提供STD3N62K3由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STD3N62K3价格参考¥3.91-¥3.91。STMicroelectronicsSTD3N62K3封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 620V 2.7A(Tc) 45W(Tc) DPAK。您可以下载STD3N62K3参考资料、Datasheet数据手册功能说明书,资料中有STD3N62K3 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 620V 2.7A DPAKMOSFET N-channel 620V, 2.7A SuperMESH Mosfet |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 2.7 A |
Id-连续漏极电流 | 2.7 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STD3N62K3SuperMESH3™ |
数据手册 | |
产品型号 | STD3N62K3 |
Pd-PowerDissipation | 45 W |
Pd-功率耗散 | 45 W |
Qg-栅极电荷 | 13 nC |
RdsOn-Drain-SourceResistance | 2.5 Ohms |
RdsOn-漏源导通电阻 | 2.5 Ohms |
Vds-Drain-SourceBreakdownVoltage | 620 V |
Vds-漏源极击穿电压 | 620 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 30 V |
Vgs-栅源极击穿电压 | 30 V |
上升时间 | 6.8 ns |
下降时间 | 15.6 ns |
不同Id时的Vgs(th)(最大值) | 4.5V @ 50µA |
不同Vds时的输入电容(Ciss) | 385pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 13nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 2.5 欧姆 @ 1.4A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | D-Pak |
其它名称 | 497-8478-6 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF216245?referrer=70071840 |
典型关闭延迟时间 | 22 ns |
功率-最大值 | 45W |
包装 | 带卷 (TR) |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
导通电阻 | 2.5 Ohms |
封装 | Reel |
封装/外壳 | TO-252-3,DPak(2 引线+接片),SC-63 |
封装/箱体 | DPAK-2 |
工厂包装数量 | 2500 |
晶体管极性 | N-Channel |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
标准包装 | 2,500 |
汲极/源极击穿电压 | 620 V |
漏极连续电流 | 2.7 A |
漏源极电压(Vdss) | 620V |
电流-连续漏极(Id)(25°C时) | 2.7A(Tc) |
系列 | STD3N62K3 |
通道模式 | Enhancement |
配置 | Single |
STD3N62K3, STF3N62K3, STU3N62K3 Datasheet N-channel 620 V, 2.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code VDS RDS(on)max. ID Package STD3N62K3 2.7 A DPAK STF3N62K3 620 V 2.5 Ω 2.7 A TO-220FP STU3N62K3 2.7 A IPAK D(2, TAB) • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance G(1) • Improved diode reverse recovery characteristics • Zener-protected Applications S(3) AM01475V1 • Switching applications Description These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status link STD3N62K3 STF3N62K3 STU3N62K3 DS5888 - Rev 3 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.
STD3N62K3, STF3N62K3, STU3N62K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP IPAK VDS Drain-source voltage 620 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 2.7 2.7 (1) 2.7 A ID Drain current (continuous) at TC = 100 °C 1.7 1.7 (1) 1.7 A IDM (2) Drain current (pulsed) 10.8 10.8 (1) 10.8 A PTOT Total dissipation at TC = 25 °C 45 20 45 W Gate-source human body model ESD 2.5 kV (C = 100 pF, R = 1.5 kΩ) dv/dt (3) Peak diode recovery voltage slope 9 V/ns Insulation withstand voltage (RMS) from all three VISO leads to external heat sink 2500 V (t = 1 s; TC = 25 °C) Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 2.7 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK Rthj-case Thermal resistance junction-case 2.78 6.25 2.78 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 100 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not-repetitive 2.7 A EAS(2) Single pulse avalanche energy 100 mJ 1. Pulse width limited by Tj max. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. DS5888 - Rev 3 page 2/27
STD3N62K3, STF3N62K3, STU3N62K3 Electrical characteristics 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V(BR)DSS ID = 1 mA, VGS = 0 V 620 V breakdown voltage Zero gate voltage drain VGS = 0 V, VDS = 620 V 1 µA IDSS current VGS = 0 V, VDS = 620 V, TC = 125 °C (1) 50 µA Gate body leakage IGSS current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V Static drain-source on RDS(on) resistance VGS = 10 V, ID = 1.4 A 2.2 2.5 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance 385 Coss Output capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 55 - pF Reverse transfer Crss capacitance 6 Equivalent output Coss eq. (1) capacitance VDS = 0 to 496 V, VGS = 0 V - 32.3 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 10 - Ω Qg Total gate charge 13 VDD = 496 V, ID = 3.4 A, VGS = 0 to 10 V Qgs Gate-source charge (see Figure 16. Test circuit for gate charge - 2.5 - nC behavior) Qgd Gate-drain charge 7.5 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 310 V, ID = 1.7 A, 9 tr Rise time RG = 4.7 Ω, VGS = 10 V 6.8 - - ns td(off) Turn-off delay time (see Figure 15. Test circuit for resistive load 22 switching times and Figure 20. Switching tf Fall time time waveform) 15.6 DS5888 - Rev 3 page 3/27
STD3N62K3, STF3N62K3, STU3N62K3 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 2.7 - A Source-drain current ISDM (1) (pulsed) 10.8 VSD (2) Forward on voltage ISD = 2.7 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 2.7 A, di/dt = 100 A/µs 190 ns Qrr Reverse recovery charge VDD = 60 V (see Figure 17. Test circuit for - 825 nC inductive load switching and diode recovery IRRM Reverse recovery current times) 9 A trr Reverse recovery time ISD = 2.7 A, di/dt = 100 A/µs 255 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C (see Figure - 1100 nC 17. Test circuit for inductive load switching IRRM Reverse recovery current and diode recovery times) 10 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit Gate-source breakdown V(BR)GSO voltage IGS = ±1 mA, ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS5888 - Rev 3 page 4/27
STD3N62K3, STF3N62K3, STU3N62K3 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for DPAK/IPAK Figure 2. Thermal impedance for DPAK/IPAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP GC20940_ZTH K δ=0.5 δ=0.2 0.1 0.05 10-1 0.02 0.01 Single pulse 10-2 10-3 10-4 10-3 10-2 10-1 100 tp(s) Figure 5. Output characterisics Figure 6. Transfer characteristics DS5888 - Rev 3 page 5/27
STD3N62K3, STF3N62K3, STU3N62K3 Electrical characteristics curves Figure 7. Normalized V(BR)DSS vs temperature Figure 8. Static drain-source on-resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs Figure 12. Normalized on-resistance vs temperature temperature DS5888 - Rev 3 page 6/27
STD3N62K3, STF3N62K3, STU3N62K3 Electrical characteristics curves Figure 13. Source-drain diode forward characteristics Figure 14. Maximum avalanche energy vs temperature DS5888 - Rev 3 page 7/27
STD3N62K3, STF3N62K3, STU3N62K3 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 + μF μF VDD VD VGS IG= CONST 100 Ω D.U.T. VGS RG D.U.T. pulse width 2200+ 2.7 kΩ VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and Figure 18. Unclamped inductive load test circuit diode recovery times A A A L G DD.U.T. fdaiostde 100 µH VD 2200 3.3 25 Ω S B B B D µ3F.3 +1µ0F00 VDD ID +µF µF VDD G D.U.T. + RG S Vi D.U.T. _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton toff V(BR)DSS td(on) tr td(off) tf VD 90% 90% IDM ID 0 10% VDS 10% VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1 DS5888 - Rev 3 page 8/27
STD3N62K3, STF3N62K3, STU3N62K3 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS5888 - Rev 3 page 9/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_25 DS5888 - Rev 3 page 10/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) type A package information Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0° 8° DS5888 - Rev 3 page 11/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 22. DPAK (TO-252) type C package outline 0068772_C_25 DS5888 - Rev 3 page 12/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) type C package information Table 10. DPAK (TO-252) type C mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.25 E 6.50 6.60 6.70 E1 4.70 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 2.90 REF L2 0.90 1.25 L3 0.51 BSC L4 0.60 0.80 1.00 L6 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° DS5888 - Rev 3 page 13/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 23. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS5888 - Rev 3 page 14/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) type E package information Table 11. DPAK (TO-252) type E mechanical data mm Dim. Min. Typ. Max. A 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 6.73 E1 4.32 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 2.74 L2 0.89 1.27 L4 1.02 Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS5888 - Rev 3 page 15/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 DS5888 - Rev 3 page 16/27
STD3N62K3, STF3N62K3, STU3N62K3 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A Tape slot G measured in core for at hub Full radius tape start 2.5mm min.width AM06038v1 Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DS5888 - Rev 3 page 17/27
STD3N62K3, STF3N62K3, STU3N62K3 TO-220FP package information 4.5 TO-220FP package information Figure 27. TO-220FP package outline 7012510_Rev_12_B DS5888 - Rev 3 page 18/27
STD3N62K3, STF3N62K3, STU3N62K3 TO-220FP package information Table 13. TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DS5888 - Rev 3 page 19/27
STD3N62K3, STF3N62K3, STU3N62K3 IPAK (TO-251) type A package information 4.6 IPAK (TO-251) type A package information Figure 28. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS5888 - Rev 3 page 20/27
STD3N62K3, STF3N62K3, STU3N62K3 IPAK (TO-251) type A package information Table 14. IPAK (TO-251) type A package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° DS5888 - Rev 3 page 21/27
STD3N62K3, STF3N62K3, STU3N62K3 IPAK (TO-251) type C package information 4.7 IPAK (TO-251) type C package information Figure 29. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS5888 - Rev 3 page 22/27
STD3N62K3, STF3N62K3, STU3N62K3 IPAK (TO-251) type C package information Table 15. IPAK (TO-251) type C package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° DS5888 - Rev 3 page 23/27
STD3N62K3, STF3N62K3, STU3N62K3 Ordering information 5 Ordering information Table 16. Order codes Order code Marking Package Packing STD3N62K3 DPAK Tape and reel STF3N62K3 3N62K3 TO-220FP Tube STU3N62K3 IPAK Tube DS5888 - Rev 3 page 24/27
STD3N62K3, STF3N62K3, STU3N62K3 Revision history Table 17. Document revision history Date Version Changes 10-Jul-2008 1 First release 17-Aug-2009 2 Modified: marking of the Table 1 The part numbers STB3N62K3 and STP3N62K3 have been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. 02-Jul-2018 3 Updated title and features in cover page. Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Added Section 5 Ordering information. Minor text changes. DS5888 - Rev 3 page 25/27
STD3N62K3, STF3N62K3, STU3N62K3 Contents Contents 1 Electrical ratings ..................................................................2 2 Electrical characteristics...........................................................3 2.1 Electrical characteristics curves ..................................................5 3 Test circuits .......................................................................8 4 Package information...............................................................9 4.1 DPAK (TO-252) type A package information........................................9 4.2 DPAK (TO-252) type C package information.......................................11 4.3 DPAK (TO-252) type E package information.......................................13 4.4 DPAK (TO-252) packing information..............................................15 4.5 TO-220FP package information .................................................17 4.6 IPAK (TO-251) type A package information........................................19 4.7 IPAK (TO-251) type C package information........................................21 5 Ordering information .............................................................24 Revision history .......................................................................25 DS5888 - Rev 3 page 26/27
STD3N62K3, STF3N62K3, STU3N62K3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS5888 - Rev 3 page 27/27
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