STD25NF10 Ω N-channel 100V - 0.033 - 25A - DPAK Low gate charge STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STD25NF10 100V < 0.038Ω 25A ■ Exceptional dv/dt capability 3 ■ Application oriented characterization 1 ■ 100% avalanche tested DPAK ■ Application oriented characterization Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input Internal schematic diagram capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Applications ■ Switching application Order codes Part number Marking Package Packaging STD25NF10T4 D25NF10 DPAK Tape & reel July 2006 Rev 4 1/13 www.st.com 13

Contents STD25NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13

STD25NF10 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 100 V DS GS V Drain-gate voltage (R = 20 kΩ) 100 V DGR GS V Gate- source voltage ± 20 V GS I (1) Drain current (continuous) at T = 25°C 25 A D C I Drain current (continuous) at T = 100°C 21 A D C I (2) Drain current (pulsed) 100 A DM P Total dissipation at T = 25°C 100 W tot C Derating Factor 0.67 W/°C dv/dt(3) Peak diode recovery avalanche energy 13 V/ns E (4) Single pulse avalanche energy 480 mJ AS T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Current limited by package 2. Pulse width limited by safe operating area. 3. I ≤ 35A, di/dt ≤ 300A/µs, V =V( , T ≤ T SD DD BR)DSS j JMAX 4. Starting T = 25 °C, I = 12.5A V = 50V j D DD Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W T Maximum lead temperature for soldering purpose 300 °C J 3/13

Electrical characteristics STD25NF10 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250µA, V =0 100 V (BR)DSS breakdown voltage D GS V = Max rating Zero gate voltage DS 1 µA I V = Max rating, DSS drain current (V = 0) DS 10 µA GS T = 125°C C Gate-body leakage I V = ± 20V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 2 3 4 V GS(th) DS GS D Static drain-source on R V = 10V, I = 12.5A 0.033 0.038 Ω DS(on) resistance GS D Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15V, I = 12.5A 20 S fs transconductance DS D Input capacitance C 1550 pF Ciss Output capacitance VDS = 25V, f = 1MHz, 220 pF Coss Reverse transfer VGS = 0 95 pF rss capacitance t Turn-on delay time 17 ns d(on) V = 50V, I = 12.5A t Rise time DD D 60 ns r R =4.7Ω V = 10V t Turn-off delay time G GS 60 ns d(off) (see Figure12) t Fall time 15 ns f Q Total gate charge V = 80V, I = 12.5A, 55 nC g DD D Q Gate-source charge V = 10V, R =4.7Ω 12 nC gs GS G Q Gate-drain charge (see Figure13) 20 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/13

STD25NF10 Electrical characteristics Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 25 A SD Source-drain current I (1) 100 A SDM (pulsed) V (2) Forward on voltage I = 25A, V = 0 1.5 V SD SD GS t Reverse recovery time I = 25A, di/dt = 100A/µs, 88 ns rr SD Q Reverse recovery charge V = 50V, T = 150°C 317 nC rr DD j I Reverse recovery current (see Figure14) 7.2 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13

Electrical characteristics STD25NF10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13

STD25NF10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs vs temperature temperature Figure 11. Source-drain diode forward characteristics 7/13

Test circuit STD25NF10 3 Test circuit Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/13

STD25NF10 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13

Package mechanical data STD25NF10 DPAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 D1 5.1 0.200 E 6.4 6.6 0.252 0.260 E1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L 1 0.039 (L1) 2.8 0.110 L2 0.8 0.031 L4 0.6 1 0.023 0.039 R 0.2 0.008 V2 0° 8° 0° 8° 0068772-F 10/13

STD25NF10 Packing mechanical data 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 11/13

Revision history STD25NF10 6 Revision history T able 6. Revision history Date Revision Changes 21-Jun-2004 3 Preliminary version 03-Jul-2006 4 New template, no content change 12/13

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