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STD20NF20产品简介:
ICGOO电子元器件商城为您提供STD20NF20由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STD20NF20价格参考¥6.68-¥6.68。STMicroelectronicsSTD20NF20封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 200V 18A(Tc) 110W(Tc) DPAK。您可以下载STD20NF20参考资料、Datasheet数据手册功能说明书,资料中有STD20NF20 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 200V 18A DPAKMOSFET Low charge STripFET |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 18 A |
Id-连续漏极电流 | 18 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STD20NF20STripFET™ |
数据手册 | |
产品型号 | STD20NF20 |
Pd-PowerDissipation | 90 W |
Pd-功率耗散 | 90 W |
RdsOn-Drain-SourceResistance | 125 mOhms |
RdsOn-漏源导通电阻 | 125 mOhms |
Vds-Drain-SourceBreakdownVoltage | 200 V |
Vds-漏源极击穿电压 | 200 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
Vgs-栅源极击穿电压 | 20 V |
上升时间 | 30 ns |
下降时间 | 10 ns |
不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
不同Vds时的输入电容(Ciss) | 940pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 39nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 125 毫欧 @ 10A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | D-Pak |
其它名称 | 497-5810-2 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1166/PF157948?referrer=70071840 |
典型关闭延迟时间 | 40 ns |
功率-最大值 | 90W |
包装 | 带卷 (TR) |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-252-3,DPak(2 引线+接片),SC-63 |
封装/箱体 | DPAK-2 |
工厂包装数量 | 2500 |
晶体管极性 | N-Channel |
最大工作温度 | + 175 C |
最小工作温度 | - 55 C |
标准包装 | 2,500 |
正向跨导-最小值 | 13 S |
漏源极电压(Vdss) | 200V |
电流-连续漏极(Id)(25°C时) | 18A (Tc) |
系列 | STD20NF20 |
通道模式 | Enhancement |
配置 | Single |
STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET™ Power MOSFET Features Type V R I P DSS DS(on) D W STD20NF20 200 V < 0.125 Ω 18 A 110 W STF20NF20 200 V < 0.125 Ω 18 A 30 W 3 3 2 2 1 1 STP20NF20 200 V < 0.125 Ω 18 A 110 W TO-220FP TO-220 ■ Exceptional dv/dt capability ■ Low gate charge 3 ■ 100% avalanche tested 1 DPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET series realized with (cid:36)(cid:8)(cid:18)(cid:9) STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters. (cid:39)(cid:8)(cid:17)(cid:9) (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STD20NF20 20NF20 DPAK Tape and reel STF20NF20 20NF20 TO-220FP Tube STP20NF20 20NF20 TO-220 Tube December 2009 Doc ID 13154 Rev 4 1/15 www.st.com 15
Contents STD20NF20, STF20NF20, STP20NF20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, DPAK TO-220FP V Drain-source voltage (V = 0) 200 V DS GS V Gate- source voltage ± 20 V GS I Drain current (continuous) at T = 25 °C 18 A D C I Drain current (continuous) at T = 100 °C 11 A D C I (1) Drain current (pulsed) 72 A DM P Total dissipation at T = 25 °C 110 30 W TOT C Derating factor 0.72 0.2 W/°C dv/dt (2) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t = 1 s; Tc = 25 °C) T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Pulse width limited by safe operating area 2. I ≤ 18 A, di/dt ≤ 400 A/µs, V ≤ V SD DD (BR)DSS Table 3. Thermal data Symbol Parameter TO-220 DPAK TO-220FP Unit Rthj-case Thermal resistance junction-case max 1.38 1.38 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 (1) 62.5 °C/W Maximum lead temperature for soldering T 300 °C l purpose 1. When mounted on 1inch² FR-4, 2 Oz copper board. Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not- IAR repetitive (pulse width limited by T max) 18 A j Single pulse avalanche energy E 110 mJ AS (starting T = 25 °C, I = I , V = 50 V) j D AR DD Doc ID 13154 Rev 4 3/15
Electrical characteristics STD20NF20, STF20NF20, STP20NF20 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 200 V (BR)DSS breakdown voltage D GS Zero gate voltage V = Max rating 1 µA I DS DSS drain current (V = 0) V = Max rating, T = 125 °C 10 µA GS DS C Gate-body leakage I V = ± 20 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 10 A 0.10 0.125 Ω DS(on) resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 25 V I = 10 A - 13 S fs transconductance DS , D Input capacitance pF C 940 iss Output capacitance V = 25 V, f = 1 MHz, pF C DS - 197 oss Reverse transfer VGS = 0 pF C 30 rss capacitance t Turn-on delay time 15 ns d(on) V = 100 V, I = 10 A, t Rise time DD D 30 ns r R = 4.7 Ω V = 10 V - t Turn-off delay time G GS 40 ns d(off) (see Figure 15) t Fall time 10 ns r Q Total gate charge V = 160 V, I = 20 A, 28 39 nC g DD D Q Gate-source charge V = 10 V - 5.6 nC gs GS Q Gate-drain charge (see Figure 16) 14.5 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 18 A SD Source-drain current - I (1) 72 A SDM (pulsed) V (2) Forward on voltage I = 20 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time I = 20 A, di/dt = 100A/µs 155 ns rr SD Q Reverse recovery charge V = 50 V - 775 nC rr DD I Reverse recovery current (see Figure 20) 10 A RRM t Reverse recovery time I = 20 A, di/dt = 100 A/µs 183 ns rr SD Q Reverse recovery charge V = 50 V, T = 150 °C - 1061 nC rr DD j I Reverse recovery current (see Figure 20) 11.6 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Doc ID 13154 Rev 4 5/15
Electrical characteristics STD20NF20, STF20NF20, STP20NF20 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance area for TO-220, DPAK DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics Figure 8. Transconductance Figure 9. Static drain-source on resistance GFS AM03979v1 (S) TJ=-50°C 19 17 TJ=25°C 15 13 TJ=175°C 11 9 7 3 6 9 12 15 18 ID(A) Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs vs temperature temperature VGS(th) AM03980v1 RDS(on) AM03981v1 (norm) (norm) 2.4 1.10 2.2 1.00 2.0 0.90 1.8 0.80 1.6 0.70 1.4 1.2 0.60 1.0 0.50 0.8 0.40 0.6 -50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C) Doc ID 13154 Rev 4 7/15
Electrical characteristics STD20NF20, STF20NF20, STP20NF20 Figure 14. Source-drain diode forward characteristics VSD AM03982v1 (V) TJ=-50°C 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 3 6 9 12 15 18 ISD(A) 8/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Test circuits 3 Test circuits Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 Doc ID 13154 Rev 4 9/15
Package mechanical data STD20NF20, STF20NF20, STP20NF20 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Package mechanical data TO-220 type A mechanical data mm Dim Min Typ Max A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 0015988_Rev_S Doc ID 13154 Rev 4 11/15
Package mechanical data STD20NF20, STF20NF20, STP20NF20 TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0 o 8 o 0068772_G 12/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 Doc ID 13154 Rev 4 13/15
Revision history STD20NF20, STF20NF20, STP20NF20 6 Revision history T able 8. Revision history Date Revision Changes 25-Jan-2007 1 First release 20-Mar-2007 2 Typo mistake in first page (order codes) 27-Apr-2007 3 Updates on Table6: Dynamic 10-Dec-2009 4 Modified device summary on first page 14/15 Doc ID 13154 Rev 4
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