STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 Ω N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD1NK60 600 V < 8.5 Ω 1 A 30 W STD1NK60-1 600 V < 8.5 Ω 1 A 30 W 3 STQ1HNK60R 600 V < 8.5 Ω 0.4 A 3 W 1 STN1HNK60 600 V < 8.5 Ω 0.4 A 3.3 W ■ TYPICAL RDS(on) = 8 Ω TO-92 (Ammopack) DPAK ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILITY ■ 100% AVALANCHE TESTED 2 ■ NEW HIGH VOLTAGE BENCHMARK 3 ■ GATE CHARGE MINIMIZED 3 2 2 1 1 SOT-223 DESCRIPTION IPAK The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to Figure 2: Internal Schematic Diagram pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh™ products. APPLICATIONS ■ LOW POWER BATTERY CHARGERS ■ SWITH MODE LOW POWER SUPPLIES(SMPS) ■ LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number Marking Package Packaging STD1NK60T4 D1NK60 DPAK TAPE & REEL STD1NK60-1 D1NK60 IPAK TUBE STQ1HNK60R 1HNK60R TO-92 BULK STQ1HNK60R-AP 1HNK60R TO-92 AMMOPAK STN1HNK60 N1HNK60 SOT-223 TAPE & REEL Rev. 3 February 2006 1/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit DPAK / IPAK TO-92 SOT-223 VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.0 0.4 0.4 A ID Drain Current (continuous) at TC = 100°C 0.63 0.25 0.25 A IDM ((cid:0)) Drain Current (pulsed) 4 1.6 1.6 A PTOT Total Dissipation at TC = 25°C 30 3 3.3 W Derating Factor 0.24 0.025 0.025 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns Tj Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature (cid:0) ( ) Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data DPAK/IPAK TO-92 SOT-223 Unit Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W Tl Maximum Lead Temperature For Soldering 275 260 °C Purpose (#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 1 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 25 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID = 1mA, VGS = 0 600 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage VGS = ± 30V ±100 nA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.25 3 3.7 V RDS(on) Static Drain-source On VGS = 10V, ID = 0.5 A 8 8.5 Ω Resistance 2/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID= 0.5 A 1 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 156 pF Coss Output Capacitance 23.5 pF Crss Reverse Transfer Capacitance 3.8 pF td(on) Turn-on Delay Time VDD = 300 V, ID = 0.5 A, 6.5 ns tr Rise Time RG= 4.7 Ω, VGS = 10 V 5 ns td(off) Turn-off Delay Time (Resistive Load see, Figure 19 ns tr Fall Time 21) 25 ns Qg Total Gate Charge VDD = 480V, ID = 1 A, 7 10 nC Qgs Gate-Source Charge VGS = 10V, RG= 4.7 Ω 1.1 nC Qgd Gate-Drain Charge (see, Figure 23) 3.7 nC Table 8: Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 1 A ISDM (2) Source-drain Current (pulsed) 4 A VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 1.0 A, di/dt = 100 A/µs 140 ns Qrr Reverse Recovery Charge VDD = 25V, Tj = 25°C 240 µC IRRM Reverse Recovery Current (see test circuit, Figure 22) 3.3 A trr Reverse Recovery Time ISD = 1.0 A, di/dt = 100 A/µs 229 ns Qrr Reverse Recovery Charge VDD = 25V, Tj = 150°C 377 µC IRRM Reverse Recovery Current (see test circuit, Figure 22) 3.3 A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 3: .Safe Operating Area For SOT-223 Figure 6: Thermal Impedance For SOT-223 Figure 4: Safe Operating Area For DPAK/IPAK Figure 7: Thermal Impedance For DPAK/IPAK Figure 5: Safe Operating Area For TO-92 Figure 8: Thermal Impedance For TO-92 4/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Gate Charge vs Gate-source Voltage Figure 11: Capacitance Variations Figure 14: Static Drain-source On Resistance 5/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 15: Normalized Gate Thereshold Volt- Figure 18: Normalized On Resistance vs Tem- age vs Temperature perature Figure 16: Source-Drain Forward Characteris- Figure 19: Normalized BVDSS vs Temperature tics Figure 17: Maximum Avalanche Energy vs Figure 20: Max Id Current vs Tc Temperature 6/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 21: Switching Times Test Circuit For Figure 23: Gate Charge Test Circuit Resistive Load Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-92 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 5° 5° 8/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-92 AMMOPACK mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 0.06 T2 2.3 0.09 d 0.41 0.56 0.016 0.022 P0 12.5 12.7 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 F1, F2 2.44 2.54 2.94 0.09 0.1 0.11 delta H -2 2 -0.08 0.08 W 17.5 18 19 0.69 0.71 0.74 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 W2 0.5 0.02 H 18.5 20.5 0.72 0.80 H0 15.5 16 16.5 0.61 0.63 0.65 H1 25 0.98 D0 3.8 4 4.2 0.15 0.157 0.16 t 0.9 0.035 L 11 0.43 l1 3 0.11 delta P -1 1 -0.04 0.04 9/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 SOT-223 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 1.80 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V 10o 10o A1 0.02 P008B 10/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-252 (DPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 11/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-251 (IPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 H C A C2 A3 1 A L2 D L B3 B6 B B5 3 E = B2 = 2 G = = = = 1 L1 0068771-E 12/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 13/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 9: Revision History Date Revision Description of Changes 22-Nov-2004 2 Added SOT-223 Package and new stylesheet 14-Feb-2006 3 Modified marking on Table 2 14/15

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2006 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15

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