STB18NF25, STD18NF25 Datasheet Automotive-grade N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II Power MOSFETs in D2PAK and DPAK packages Features TAB TAB Order codes VDS RDS(on)max. ID PTOT 2 3 STB18NF25 2 1 250 V 0.165 Ω 17 A 110 W 3 STD18NF25 1 D2PAK DPAK • AEC-Q101 qualified • Exceptional dv/dt capability D(2, TAB) • 100% avalanche tested • Low gate charge G(1) Applications • Switching applications S(3) AM01475v1_noZen Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status STB18NF25 STD18NF25 DS6601 - Rev 5 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.

STB18NF25, STD18NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 250 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 17 A ID Drain current (continuous) at TC = 100 °C 12 A IDM (1) Drain current (pulsed) 68 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt (2) Peak diode recovery voltage slope 10 V/ns Tj Operating junction temperature range -55 to 175 °C Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 17 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Value Symbol Parameter Unit D2PAK DPAK Rthj-case Thermal resistance junction-case 1.36 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 30 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive IAR 17 A (pulse width limited by Tjmax) Single pulse avalanche energy EAS 170 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) DS6601 - Rev 5 page 2/22

STB18NF25, STD18NF25 Electrical characteristics 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 250 V VGS = 0 V, VDS = 250 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 250 V, 10 µA TC = 125 °C (1) IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 8.5 A 0.140 0.165 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance 1000 VDS = 25 V, f = 1 MHz, Coss Output capacitance - 178 - pF VGS = 0 V Crss Reverse transfer capacitance 28 Co(tr) (1) Equivalent capacitance time related - 106 - Equivalent capacitance VDS = 0 to 200 V, VGS = 0 V pF Co(er) (2) 79 - energy related Rg Gate input resistance f = 1 MHz, ID=0 A - 2 - Ω Qg Total gate charge VDD = 200 V, ID = 17 A, 29.3 - Qgs Gate-source charge VGS = 0 to 10 V - 4.5 nC (see Figure 16. Test circuit for - Qgd Gate-drain charge gate charge behavior) 14.4 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 125 V, ID = 8.5 A, 10.2 tr Rise time RG = 4.7 Ω, VGS = 10 V 16.5 td(off) Turn-off delay time (see Figure 15. Test circuit for - 31.5 - ns resistive load switching times and Figure 20. Switching time tf Fall time waveform) 9.8 DS6601 - Rev 5 page 3/22

STB18NF25, STD18NF25 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 17 - A ISDM (1) Source-drain current (pulsed) 68 VSD (2) Forward on voltage ISD = 17 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 17 A, di/dt = 100 A/µs 147 ns Qrr Reverse recovery charge VDD = 60 V 0.8 μC - (see Figure 17. Test circuit for IRRM Reverse recovery current inductive load switching and 10.6 A diode recovery times) trr Reverse recovery time ISD = 17 A, di/dt = 100 A/µs 180 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C 1.1 μC - (see Figure 17. Test circuit for IRRM Reverse recovery current inductive load switching and 12 A diode recovery times) 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6601 - Rev 5 page 4/22

STB18NF25, STD18NF25 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for D2PAK Figure 2. Thermal impedance for D2PAK ID AM05549v1 (A) 10 Operatimoint eidn tbhyi s maarex a RisDS(on) 11100m0µsµss Li 10ms 1 Tj=175°C Tc=25°C Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 3. Safe operating area for DPAK Figure 4. Thermal impedance for DPAK ID AM05561v1 K GC20460 (A) Tj=175°C,Tc=25°C Single pulse 100 10µs 100 10 OperLiatimiotne id n btyh ism aarx eaR iDsS(on) 110m0sµs 10-1 1 10ms 0.1 10-2 0.1 1 10 100 VDS(V) 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 5. Output characterisics Figure 6. Transfer characteristics ID(A) AM05550v1 ID AM05551v1 (A) 45 VGS=10V VDS=10V 7V 40 30 35 6V 30 25 20 20 15 5V 10 10 5 0 0 0 10 20 VDS(V) 0 2 4 6 8 VGS(V) DS6601 - Rev 5 page 5/22

STB18NF25, STD18NF25 Electrical characteristics curves Figure 7. Gate charge vs gate-source voltage Figure 8. Static drain-source on resistance VGS AMVD05S552v1 (V) (V) VDD=200V 12 VDS ID=17A 200 10 150 8 6 100 4 50 2 0 0 0 10 20 30 Qg(nC) Figure 9. Output capacitance stored energy Figure 10. Capacitance variations Eoss AM05554v1 C AM05555v1 (µJ) (pF) 4.0 3.5 1000 Ciss 3.0 2.5 2.0 100 1.5 Coss 1.0 0.5 Crss 0 10 0 50 100 150 200 VDS(V) 0.1 1 10 100 VDS(V) Figure 11. Normalized gate threshold voltage vs Figure 12. Normalized on-resistance vs temperature temperature VGS(th) AM05556v1 (RnDoSr(mon)) AM05557v1 (norm) 2.5 1.10 1.00 2.0 0.90 0.80 1.5 0.70 0.60 1.0 0.50 0.40 0.5 0.30 -100 -50 0 50 100 150 TJ(°C) -100 -50 0 50 100 150 TJ(°C) DS6601 - Rev 5 page 6/22

STB18NF25, STD18NF25 Electrical characteristics curves Figure 13. Source-drain diode forward characteristics Figure 14. Normalized V(BR)DSS vs temperature VSD AM05558v1 V(BR)DSS AM05559v1 (V) (norm) TJ=-50°C 1.0 1.15 0.9 1.10 0.8 TJ=25°C 1.05 0.7 TJ=175°C 1.00 0.6 0.5 0.95 0.4 0.90 0 5 10 15 20 ISD(A) -100 -50 0 50 100 150 TJ(°C) DS6601 - Rev 5 page 7/22

STB18NF25, STD18NF25 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 + μF μF VDD VD VGS IG= CONST 100 Ω D.U.T. VGS RG D.U.T. pulse width 2200+ 2.7 kΩ VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and Figure 18. Unclamped inductive load test circuit diode recovery times A A A L G DD.U.T. fdaiostde 100 µH VD 2200 3.3 25 Ω S B B B D µ3F.3 +1µ0F00 VDD ID +µF µF VDD G D.U.T. + RG S Vi D.U.T. _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform V(BR)DSS ton toff VD td(on) tr td(off) tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1 DS6601 - Rev 5 page 8/22

STB18NF25, STD18NF25 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6601 - Rev 5 page 9/22

STB18NF25, STD18NF25 D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 21. D²PAK (TO-263) type A package outline 0079457_25 DS6601 - Rev 5 page 10/22

STB18NF25, STD18NF25 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 10.40 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.40 V2 0° 8° DS6601 - Rev 5 page 11/22

STB18NF25, STD18NF25 D²PAK (TO-263) type A package information Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS6601 - Rev 5 page 12/22

STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information 4.2 DPAK (TO-252) type A2 package information Figure 23. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev25 DS6601 - Rev 5 page 13/22

STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information Table 9. DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0° 8° DS6601 - Rev 5 page 14/22

STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS6601 - Rev 5 page 15/22

STB18NF25, STD18NF25 D²PAK and DPAK packing information 4.3 D²PAK and DPAK packing information Figure 25. Tape outline DS6601 - Rev 5 page 16/22

STB18NF25, STD18NF25 D²PAK and DPAK packing information Figure 26. Reel outline T 40mm min. access hole at slot location B D C N A Tape slot G measured in core for at hub Full radius tape start 2.5mm min.width AM06038v1 Table 10. D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DS6601 - Rev 5 page 17/22

STB18NF25, STD18NF25 D²PAK and DPAK packing information Table 11. DPAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DS6601 - Rev 5 page 18/22

STB18NF25, STD18NF25 Ordering information 5 Ordering information Table 12. Order codes Order code Marking Package Packing STB18NF25 D2PAK 18NF25 Tape and reel STD18NF25 DPAK DS6601 - Rev 5 page 19/22

STB18NF25, STD18NF25 Revision history Table 13. Document revision history Date Version Changes 16-Nov-2009 1 First release. 19-Feb-2010 2 VDS value in Table 8 has been corrected. Updated EAS in Table 4: Avalanche data, Section 4: Package information and 26-Apr-2012 3 Section 4.3: Packing information. Minor text changes. Updated 4.2: DPAK (TO-252) package information 10-Sep-2015 4 Minor text changes. Removed maturity status indication from cover page. Modified title and features on cover page. Modified Table 5. Dynamic, Table 6. Switching times and Table 7. Source 07-May-2018 5 drain diode. Modified Figure 8. Static drain-source on resistance. Updated Section 4 Package information. Minor text changes. DS6601 - Rev 5 page 20/22

STB18NF25, STD18NF25 Contents Contents 1 Electrical ratings ..................................................................2 2 Electrical characteristics...........................................................3 2.1 Electrical characteristics curves ..................................................5 3 Test circuits .......................................................................8 4 Package information...............................................................9 4.1 D²PAK (TO-263) type A package information .......................................9 4.2 DPAK (TO-252) type A2 package information......................................12 4.3 D²PAK and DPAK packing information............................................15 5 Ordering information .............................................................19 Revision history .......................................................................20 DS6601 - Rev 5 page 21/22

STB18NF25, STD18NF25 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6601 - Rev 5 page 22/22

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