STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Type V R max I DSS DS(on) D STD150N3LLH6 30 V 0.0028 Ω 80 A 3 3 STP150N3LLH6 30 V 0.0033 Ω 80 A 2 1 1 STu150N3LLH6 30 V 0.0033 Ω 80 A DPAK IPAK ■ R * Q industry benchmark DS(on) g ■ Extremely low on-resistance R DS(on) 3 ■ High avalanche ruggedness 2 1 TO-220 ■ Low gate drive power losses Application ■ Switching applications Figure 1. Internal schematic diagram Description (cid:36)(cid:0)(cid:8)(cid:52)(cid:33)(cid:34)(cid:0)(cid:79)(cid:82)(cid:0)(cid:18)(cid:9) This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. (cid:39)(cid:8)(cid:17)(cid:9) (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:20)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STD150N3LLH6 150N3LLH6 DPAK Tape and reel STP150N3LLH6 150N3LLH6 TO-220 Tube STU150N3LLH6 150N3LLH6 IPAK Tube September 2009 Doc ID 15227 Rev 3 1/16 www.st.com 16

Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 15227 Rev 3

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 80 A I (2) Drain current (pulsed) 320 A DM PTOT Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C E (3) Single pulse avalanche energy 525 mJ AS Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, I = 40 A, V = 25 V D DD Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Tj Maximum lead temperature for soldering purpose 275 °C Doc ID 15227 Rev 3 3/16

Electrical characteristics STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS Voltage ID = 250 µA, VGS= 0 30 V Zero gate voltage drain VDS = 30 V 1 µA I DSS current (VGS = 0) VDS = 30 V,Tc = 125 °C 10 µA Gate body leakage current IGSS (V = 0) VGS = ± 20 V ±100 nA DS VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V V = 10 V, I = 40 A GS D 0.0024 0.0028 Ω SMD version Static drain-source on VGS = 10 V, ID = 40 A 0.0029 0.0033 Ω R DS(on) resistance V = 4.5 V, I = 40 A GS D 0.0034 0.0045 Ω SMD version VGS = 4.5 V, ID = 40 A 0.0039 0.0049 Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit Input capacitance Ciss 4040 pF Output capacitance VDS = 25 V, f=1 MHz, Coss - 740 - pF C Reverse transfer VGS = 0 425 pF rss capacitance Qg Total gate charge VDD = 15 V, ID = 80 A 40 nC Qgs Gate-source charge VGS = 4.5 V - 16.3 - nC Qgd Gate-drain charge (see Figure 14) 15.8 nC f = 1 MHz gate bias Bias = 0 test signal RG Gate input resistance - 1.4 - Ω level = 20 mV open drain 4/16 Doc ID 15227 Rev 3

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit V = 15 V, I = 40 A, td(on) Turn-on delay time DD D 17 ns R = 4.7 Ω, V = 10 V - - t Rise time G GS 18 ns r (see Figure 15) V = 15 V, I = 40 A, td(off) Turn-off delay time DD D 75 ns R = 4.7 Ω, V = 10 V - - t Fall time G GS 46 ns f (see Figure 15) Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 80 A - I (1) Source-drain current (pulsed) 320 A SDM VSD(2) Forward on voltage ISD = 40 A, VGS = 0 - 1.1 V I = 80 A, trr Reverse recovery time SD 34 ns di/dt = 100 A/µs, Qrr Reverse recovery charge - 35 nC V = 24 V I Reverse recovery current DD 2.1 A RRM (see Figure 17) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15227 Rev 3 5/16

Electrical characteristics STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID AM03997v1 1(0A0) OpLeirmaittieodn ibny thmisa x arReDa Si(son) 10 100µs 1ms Tj=150°C 10ms 1 Tc=25°C Sinlge pulse 0.1 0.1 1 10 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM03998v1 AM03999v1 ID ID (A) (A) VGS=10V 350 300 VDS=1V 300 250 5V 250 4V 200 200 150 150 100 100 3V 50 50 0 0 0 2 4 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 6. Normalized BV vs temperature Figure 7. Static drain-source on resistance DSS BVDSS AM04903v1 RDS(on) AM04905v1 (Ω) (norm) 1.06 4.5 VGS=10V ID=250µA 4.0 1.04 3.5 3.0 1.02 2.5 1.00 2.0 0.98 1.5 1.0 0.96 0.5 0.94 0.0 -50 0 50 100 150 TJ(°C) 0 20 40 60 80 ID(A) 6/16 Doc ID 15227 Rev 3

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations VGS AM04000v1 C AM00893v1 (V) (pF) VDD=15V f=1MHz 12 ID=80A 6100 10 4600 8 Ciss 6 3100 4 1600 2 Coss Crss 0 100 0 20 40 60 80 100 Qg(nC) 0 5 10 15 20 25 VDS(V) Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature VGS(th) AM04901v1 RDS(on) AM04902v1 (norm) (norm) ID=250µA 1.6 ID=40A 1.1 VGS=10V 1.4 1.0 1.2 0.8 1.0 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -50 0 50 100 150 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics VSD AM04906v1 (V) TJ=-50°C 1.0 0.9 0.8 0.7 TJ=25°C TJ=175°C 0.6 0.5 0.4 0 20 40 60 80 ISD(A) Doc ID 15227 Rev 3 7/16

Test circuit STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 3 Test circuit Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/16 Doc ID 15227 Rev 3

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Test circuit Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 15227 Rev 3 9/16

Package mechanical data STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 15227 Rev 3

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 15227 Rev 3 11/16

Package mechanical data STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0 o 8o 0068772_G 12/16 Doc ID 15227 Rev 3

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Package mechanical data TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 Doc ID 15227 Rev 3 13/16

Packaging mechanical data STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 14/16 Doc ID 15227 Rev 3

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Revision history 6 Revision history T able 8. Document revision history Date Revision Changes 01-Dec-2008 1 First release – Document status promoted from preliminary data to datasheet 20-Jul-2009 2 – Added new package, mechanical data: TO-220 10-Sep-2009 3 Q and Q values have been modified on Table5: Dynamic gs gd Doc ID 15227 Rev 3 15/16

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