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  • 型号: STD13NM60N
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STD13NM60N产品简介:

ICGOO电子元器件商城为您提供STD13NM60N由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STD13NM60N价格参考。STMicroelectronicsSTD13NM60N封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 600V 11A(Tc) 90W(Tc) DPAK。您可以下载STD13NM60N参考资料、Datasheet数据手册功能说明书,资料中有STD13NM60N 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 600V 11A DPAKMOSFET N-Ch 600 Volt 11 Amp Power MDmesh

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

11 A

Id-连续漏极电流

11 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STD13NM60NMDmesh™ II

数据手册

点击此处下载产品Datasheet

产品型号

STD13NM60N

Pd-PowerDissipation

90 W

Pd-功率耗散

90 W

RdsOn-Drain-SourceResistance

360 mOhms

RdsOn-漏源导通电阻

360 mOhms

Vds-Drain-SourceBreakdownVoltage

600 V

Vds-漏源极击穿电压

600 V

Vgs-Gate-SourceBreakdownVoltage

+/- 25 V

Vgs-栅源极击穿电压

25 V

上升时间

8 ns

下降时间

10 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

790pF @ 50V

不同Vgs时的栅极电荷(Qg)

30nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

360 毫欧 @ 5.5A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

D-Pak

其它名称

497-8773-1

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF221229?referrer=70071840

典型关闭延迟时间

30 ns

功率-最大值

90W

包装

剪切带 (CT)

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-252-3,DPak(2 引线+接片),SC-63

封装/箱体

DPAK-2

工厂包装数量

2500

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

漏源极电压(Vdss)

600V

电流-连续漏极(Id)(25°C时)

11A (Tc)

系列

STD13NM60N

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Features Order code V (@Tjmax) R max I DS DS(on) D STB13NM60N TAB 650 V 0.36 Ω 11 A TAB STD13NM60N 3 • 100% avalanche tested 3 1 1 • Low input capacitance and gate charge D²PAK DPAK • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram Description (cid:39)(cid:11)(cid:21)(cid:3)(cid:82)(cid:85)(cid:3)(cid:55)(cid:36)(cid:37)(cid:12) These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s (cid:42)(cid:11)(cid:20)(cid:12) lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. (cid:54)(cid:11)(cid:22)(cid:12) (cid:54)(cid:38)(cid:19)(cid:25)(cid:20)(cid:23)(cid:19) Table 1. Device summary Order code Marking Packages Packaging STB13NM60N D²PAK 13NM60N Tape and reel STD13NM60N DPAK June 2015 DocID024095 Rev 3 1/24 This is information on a product in full production. www.st.com

Contents STB13NM60N, STD13NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 DPAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 600 V DS V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 11 A D C I Drain current (continuous) at T = 100 °C 6.93 A D C I (1) Drain current (pulsed) 44 A DM P Total dissipation at T = 25 °C 90 W TOT C dv/dt (2) Peak diode recovery voltage slope 15 V/ns T Storage temperature - 55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Pulse width limited by safe operating area 2. I ≤11 A, di/dt ≤ 400 A/µs, V ≤ V , V = 80% V SD DS peak (BR)DSS DD (BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit D²PAK DPAK R Thermal resistance junction-case max 1.39 °C/W thj-case R Thermal resistance junction-pcb max 30 50 °C/W thj-pcb Table 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 3.5 A AS (pulse width limited by Tj max) Single pulse avalanche energy E 200 mJ AS (starting T =25 °C, I =I , V =50 V) J D AS DD DocID024095 Rev 3 3/24 24

Electrical characteristics STB13NM60N, STD13NM60N 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V V = 0, I = 1 mA 600 V (BR)DSS breakdown voltage GS D V = 0, V = 600 V 1 µA GS DS Zero gate voltage IDSS drain current VGS = 0, VDS = 600 V, 100 µA T =125 °C C Gate-body leakage I V = 0, V = ± 25 V ± 0.1 µA GSS current DS GS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source R V = 10 V, I = 5.5 A 0.28 0.36 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 790 - pF iss C Output capacitance V = 0, V = 50 V, - 60 - pF oss GS DS f = 1 MHz Reverse transfer C - 3.6 - pF rss capacitance Equivalent output C (1) V = 0, V = 0 to 480 V - 135 - pF oss eq. capacitance GS DS Q Total gate charge - 27 - nC g V = 480 V, I = 11 A, DD D Q Gate-source charge V = 10 V, - 4 - nC gs GS (see Figure 16) Q Gate-drain charge - 14 - nC gd R Gate input resistance f=1 MHz open drain - 4.7 - Ω G 1. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time - 3 - ns d(on) V = 300 V, I = 5.5 A t Rise time DD D - 8 - ns r R =4.7 Ω V = 10 V G GS t Turn-off delay time - 30 - ns d(off) (see Figure 15) t Fall time - 10 - ns f 4/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max. Unit I Source-drain current - 11 A SD I (1) Source-drain current (pulsed) - 44 A SDM V (2) Forward on voltage I = 11 A, V = 0 - 1.5 V SD SD GS t Reverse recovery time - 230 ns rr I = 11 A, di/dt = 100 A/µs SD Q Reverse recovery charge V = 100 V - 2 µC rr DD (see Figure 17) I Reverse recovery current - 18 A RRM t Reverse recovery time - 290 ns rr I = 11 A, di/dt = 100 A/µs SD Q Reverse recovery charge V = 100 V, T = 150 °C - 2.5 µC rr DD j (see Figure 17) I Reverse recovery current - 17 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024095 Rev 3 5/24 24

Electrical characteristics STB13NM60N, STD13NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK Figure 3. Thermal impedance for D²PAK ID AM03258v1 (A) 10 Operatimiotne idn tbyh is maarx eaR iDsS(on) 11000µµss 1 Li Tj=150°C 1ms Tc=25°C 10ms Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK (cid:44)(cid:39) (cid:36)(cid:48)(cid:19)(cid:22)(cid:21)(cid:25)(cid:19)(cid:89)(cid:20) (cid:11)(cid:36)(cid:12) (cid:20)(cid:19) (cid:50)(cid:83)(cid:72)(cid:85)(cid:68)(cid:87)(cid:76)(cid:80)(cid:76)(cid:82)(cid:87)(cid:81)(cid:72)(cid:3)(cid:76)(cid:71)(cid:3)(cid:81)(cid:3)(cid:69)(cid:87)(cid:92)(cid:75)(cid:3)(cid:76)(cid:86)(cid:80)(cid:3)(cid:68)(cid:68)(cid:85)(cid:91)(cid:3)(cid:72)(cid:53)(cid:68)(cid:3)(cid:76)(cid:39)(cid:86)(cid:54)(cid:11)(cid:82)(cid:81)(cid:12) (cid:20)(cid:20)(cid:19)(cid:19)(cid:19)(cid:151)(cid:151)(cid:86)(cid:86) (cid:20) (cid:47)(cid:76) (cid:55)(cid:77)(cid:32)(cid:20)(cid:24)(cid:19)(cid:131)(cid:38) (cid:20)(cid:80)(cid:86) (cid:55)(cid:70)(cid:32)(cid:21)(cid:24)(cid:131)(cid:38) (cid:54)(cid:76)(cid:81)(cid:74)(cid:79)(cid:72) (cid:20)(cid:19)(cid:80)(cid:86) (cid:83)(cid:88)(cid:79)(cid:86)(cid:72) (cid:19)(cid:17)(cid:20) (cid:19)(cid:17)(cid:20) (cid:20) (cid:20)(cid:19) (cid:20)(cid:19)(cid:19) (cid:57)(cid:39)(cid:54)(cid:11)(cid:57)(cid:12) Figure 6. Output characteristics Figure 7. Transfer characteristics (cid:36)(cid:48)(cid:19)(cid:22)(cid:22)(cid:19)(cid:19)(cid:89)(cid:20) (cid:36)(cid:48)(cid:19)(cid:22)(cid:22)(cid:19)(cid:20)(cid:89)(cid:20) (cid:44)(cid:39) (cid:44)(cid:39) (cid:11)(cid:36)(cid:12) (cid:57)(cid:42)(cid:54)(cid:32)(cid:20)(cid:19)(cid:57) (cid:11)(cid:36)(cid:12) (cid:57)(cid:39)(cid:54)(cid:32)(cid:21)(cid:19)(cid:57) (cid:21)(cid:21) (cid:21)(cid:21) (cid:25)(cid:57) (cid:21)(cid:19) (cid:21)(cid:19) (cid:20)(cid:27) (cid:20)(cid:27) (cid:20)(cid:25) (cid:20)(cid:25) (cid:20)(cid:23) (cid:20)(cid:23) (cid:20)(cid:21) (cid:20)(cid:21) (cid:24)(cid:57) (cid:20)(cid:19) (cid:20)(cid:19) (cid:27) (cid:27) (cid:25) (cid:25) (cid:23) (cid:23) (cid:21) (cid:21) (cid:23)(cid:57) (cid:19) (cid:19) (cid:19) (cid:24) (cid:20)(cid:19) (cid:20)(cid:24) (cid:21)(cid:19) (cid:21)(cid:24) (cid:57)(cid:39)(cid:54)(cid:11)(cid:57)(cid:12) (cid:19) (cid:21) (cid:23) (cid:25) (cid:27) (cid:20)(cid:19) (cid:57)(cid:42)(cid:54)(cid:11)(cid:57)(cid:12) 6/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Electrical characteristics Figure 8. Normalized V vs temperature Figure 9. Static drain-source on-resistance (BR)DSS V(BR)DSS AM09028v1 RDS(on) AM03302v1 (norm) ID=1mA (Ω) 1.10 1.08 0.30 VGS=10V 1.06 0.28 1.04 1.02 0.26 1.00 0.24 0.98 0.96 0.22 0.94 0.92 0.2 -50 -25 0 25 50 75 100 TJ(°C) 0 2 4 6 8 10 ID(A) Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations VGS AM03305v1 (cid:38) (cid:36)(cid:48)(cid:19)(cid:22)(cid:22)(cid:19)(cid:23)(cid:89)(cid:20) (V) VDS(V) (cid:11)(cid:83)(cid:41)(cid:12) VDD=480V 12 VDS ID=11A 500 (cid:20)(cid:19)(cid:19)(cid:19) 10 (cid:38)(cid:76)(cid:86)(cid:86) 400 8 300 (cid:20)(cid:19)(cid:19) 6 (cid:38)(cid:82)(cid:86)(cid:86) 200 4 (cid:20)(cid:19) 2 100 (cid:38)(cid:85)(cid:86)(cid:86) 0 0 (cid:20) 0 10 20 30 Qg(nC) (cid:19)(cid:17)(cid:20) (cid:20) (cid:20)(cid:19) (cid:20)(cid:19)(cid:19) (cid:57)(cid:39)(cid:54)(cid:11)(cid:57)(cid:12) Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs temperature temperature VGS(th) AM03306v1 RDS(on) AM03307v1 (norm) (norm) ID=5.5A 1.10 2.1 ID=250µA VGS=10V 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) DocID024095 Rev 3 7/24 24

Electrical characteristics STB13NM60N, STD13NM60N Figure 14. Source-drain diode forward characteristics VSD AM09290v1 (V) TJ=-50°C 1.2 TJ=25°C 1.0 0.8 TJ=150°C 0.6 0.4 0 2 4 6 8 10 ISD(A) 8/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Test circuits 3 Test circuits Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID024095 Rev 3 9/24 24

Package information STB13NM60N, STD13NM60N 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2 4.1 D PAK package information Figure 21. D²PAK (TO-263) type A package outline (cid:19)(cid:19)(cid:26)(cid:28)(cid:23)(cid:24)(cid:26)(cid:66)(cid:36)(cid:66)(cid:85)(cid:72)(cid:89)(cid:21)(cid:21) 10/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Package information Table 9. D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 10.40 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° DocID024095 Rev 3 11/24 24

Package information STB13NM60N, STD13NM60N Figure 22. D²PAK (TO-263) type B package outline (cid:19)(cid:19)(cid:26)(cid:28)(cid:23)(cid:24)(cid:26)(cid:66)(cid:37)(cid:66)(cid:85)(cid:72)(cid:89)(cid:21)(cid:21) 12/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Package information Table 10. D²PAK (TO-263) type B package mechanical data mm Dim. Min. Typ. Max. A 4.36 4.60 A1 0 0.25 b 0.70 0.93 b2 1.14 1.70 c 0.38 0.694 c1 0.38 0.534 c2 1.19 1.36 D 8.6 9.35 D1 6.9 E 10 10.55 E1 8.1 e 2.54 H 15 15.85 L 1.9 2.79 L1 1.65 L2 1.78 L3 0.25 L4 4.78 5.28 DocID024095 Rev 3 13/24 24

Package information STB13NM60N, STD13NM60N Figure 23. D²PAK footprint(a) (cid:41)(cid:82)(cid:82)(cid:87)(cid:83)(cid:85)(cid:76)(cid:81)(cid:87) a. All dimension are in millimeters 14/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Package information 4.2 DPAK package information Figure 24. DPAK (TO-252) type A2 package outline (cid:19)(cid:19)(cid:25)(cid:27)(cid:26)(cid:26)(cid:21)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:16)(cid:36)(cid:21)(cid:66)(cid:85)(cid:72)(cid:89)(cid:20)(cid:28) DocID024095 Rev 3 15/24 24

Package information STB13NM60N, STD13NM60N Table 11. DPAK (TO-252) type A2 package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0° 8° 16/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Package information Figure 25. DPAK (TO-252) type C2 outline (cid:161)(cid:3) (cid:20)(cid:17) (cid:21)(cid:3) (cid:147)(cid:3) (cid:19)(cid:17) (cid:20) (cid:19)(cid:19)(cid:25)(cid:27)(cid:26)(cid:26)(cid:21)(cid:66)(cid:20)(cid:28)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:66)(cid:38)(cid:21) DocID024095 Rev 3 17/24 24

Package information STB13NM60N, STD13NM60N Table 12. DPAK (TO-252) type C2 package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.25 - - E 6.50 6.60 6.70 E1 5.20 - - e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 2.90 REF L2 0.90 - 1.25 L3 0.51 BSC L4 0.60 0.80 1.00 L6 1.80 BSC Θ1 5° 7° 9° Θ2 5° 7° 9° V2 0° 8° 18/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Package information Figure 26. DPAK (TO-252) footprint (b) (cid:41)(cid:51)(cid:19)(cid:19)(cid:25)(cid:27)(cid:26)(cid:26)(cid:21)(cid:66)(cid:52) b. All dimensions are in millimeters DocID024095 Rev 3 19/24 24

Packing information STB13NM60N, STD13NM60N 5 Packing information Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 20/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Packing information Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024095 Rev 3 21/24 24

Packing information STB13NM60N, STD13NM60N Table 14. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 22/24 DocID024095 Rev 3

STB13NM60N, STD13NM60N Revision history 6 Revision history Table 15. Document revision history Date Revision Changes 18-Dec-2012 1 First release – Updated: Section3: Test circuits 10-Jul-2014 2 – Updated: Section4: Package information – Minor text changes – Updated 4: Package information 19-Jun-2015 3 – Minor text changes DocID024095 Rev 3 23/24 24

STB13NM60N, STD13NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 24/24 DocID024095 Rev 3

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