STD12NF06L-1 N-channel 60 V, 0.07 Ω typ.,12 A, STripFET™ II Power MOSFET in an IPAK package Datasheet - production data Features R Order code V DS(on) I DS max. D (cid:22) STD12NF06L-1 60 V 0.09 Ω 12 A (cid:21) (cid:20) (cid:44)(cid:51)(cid:36)(cid:46) • Exceptional dv/dt capability • Low gate charge Figure 1. Internal schematic diagram Applications • Switching applications (cid:39)(cid:11)(cid:21)(cid:15)(cid:3)(cid:55)(cid:36)(cid:37)(cid:12) Description This Power MOSFET has been developed using (cid:42)(cid:11)(cid:20)(cid:12) STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the (cid:54)(cid:11)(cid:22)(cid:12) device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer (cid:36)(cid:48)(cid:19)(cid:20)(cid:23)(cid:26)(cid:24)(cid:89)(cid:20) applications, and applications with low gate charge driving requirements. Table 1. Device summary Order code Marking Package Packaging STD12NF06L-1 D12NF06L IPAK Tube November 2014 DocID026644 Rev 3 1/14 This is information on a product in full production. www.st.com

Contents STD12NF06L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 DocID026644 Rev 3

STD12NF06L-1 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage ± 16 V GS I Drain current (continuous) at T = 25 °C 12 A D C Drain current (continuous) at I 8.5 A D T = 100 °C C I (1) Drain current (pulsed) 48 A DM P Total dissipation at T = 25 °C 30 W TOT C Derating factor 0.2 W/°C dv/dt(2) Peak diode recovery voltage slope 15 V/ns E (3) Single pulse avalanche energy 100 mJ AS T Storage temperature stg -55 to 175 °C T Max. operating junction temperature J 1. Pulse width limited by safe operating area 2. ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDS ≤ 40 V, TJ ≤ TJMAX 3. Starting T = 25 °C, I = 6 A, V = 30 V J D DD Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 5 °C/W thj-case Thermal resistance junction-ambient R 100 °C/W thj-amb max. DocID026644 Rev 3 3/14 14

Electrical characteristics STD12NF06L-1 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V V = 0, I = 250 μA, 60 V (BR)DSS voltage GS D V = 0, V = 60 1 µA GS DS Zero gate voltage drain IDSS current VGS = 0, VDS = 60 10 µA T = 125 °C C V = 0 I Gate body leakage current DS ±100 nA GSS V = ± 16 V GS V Gate threshold voltage V = V , I = 250 µA 1 2 V GS(th) DS GS D Static drain-source VGS = 10 V, ID = 6 A 0.07 0.09 Ω R DS(on) on-resistance V = 5 V, I = 6 A 0.08 0.10 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance 350 pF iss Coss Output capacitance VDS = 25 V, f = 1 MHz, 75 pF V = 0 Reverse transfer GS C 30 pF rss capacitance Q Total gate charge 7.5 10 nC g V = 48 V, I = 12 A DD D Q Gate-source charge V = 5 V 2.5 nC gs GS (see Figure14) Q Gate-drain charge 3.0 nC gd Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 10 ns d(on) V = 30 V, I = 6 A, t Rise time DD D 35 ns r R = 4.7 Ω, V = 4.5 V G GS t Turn-off delay time 20 ns d(off) (see Figure13) t Fall time 13 ns f 4/14 DocID026644 Rev 3

STD12NF06L-1 Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 12 A SD I (1) Source-drain current (pulsed) 48 A SDM V (2) Forward on voltage I = 12 A, V = 0 1.5 V SD SD GS t Reverse recovery time I = 12 A, 50 ns rr SD di/dt = 100 A/µs, Q Reverse recovery charge 65 nC rr V = 16 V, T = 150 °C DD J IRRM Reverse recovery current (see Figure15) 2.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DocID026644 Rev 3 5/14 14

Electrical characteristics STD12NF06L-1 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Tj=175°C Tc=25°C Single Pulse Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized V vs. temperature Figure 7. Static drain-source on-resistance (BR)DSS V(BR)DSS ID= 250μA 6/14 DocID026644 Rev 3

STD12NF06L-1 Electrical characteristics Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs. vs. temperature temperature VGS= 10 V ID=6 A VDS= VGS ID=250 μA Figure 12. Source-drain diode forward characteristics DocID026644 Rev 3 7/14 14

Test circuit STD12NF06L-1 3 Test circuit Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS RG D.U.T. 2μ2F00 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times A A A L D G D.U.T. FDAIOSTDE L=100μH VD 2200 3.3 S B 3.3 1000 μF μF VDD B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/14 DocID026644 Rev 3

STD12NF06L-1 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 19. IPAK (TO-251) type A drawing 0068771_L DocID026644 Rev 3 9/14 14

Package mechanical data STD12NF06L-1 Table 8. IPAK (TO-251) type A mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° 10/14 DocID026644 Rev 3

STD12NF06L-1 Package mechanical data Figure 20. IPAK (TO-251) type C drawing (cid:19)(cid:19)(cid:25)(cid:27)(cid:26)(cid:26)(cid:20)(cid:3)(cid:55)(cid:92)(cid:83)(cid:72)(cid:3)(cid:38)(cid:3)(cid:53)(cid:72)(cid:89)(cid:3)(cid:47) DocID026644 Rev 3 11/14 14

Package mechanical data STD12NF06L-1 Table 9. IPAK (TO-251) type C mechanical data mm Dim. min. typ. max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° 12/14 DocID026644 Rev 3

STD12NF06L-1 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes Initial release.The part number STD12NF06L-1 previously included 03-Jul-2014 1 in datasheet with docID8179. 15-Oct-2014 2 Updated Section4: Package mechanical data. Updated title in cover page and Table4: On/off states. Updated Figure2: Safe operating area ,Figure3: Thermal impedance,.Figure10: Normalized gate threshold voltage vs. 14-Nov-2014 3 temperature and Figure11: Normalized on-resistance vs. temperature. Minor text changes. DocID026644 Rev 3 13/14 14

STD12NF06L-1 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 14/14 DocID026644 Rev 3

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