STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 Ω N-channel 650 V, 0.39 , 8.5 A MDmesh™ V Power MOSFET 2 DPAK, I PAK, TO-220FP, TO-220, IPAK Features V @ R Type DSS DS(on) I P T max D TOT 3 Jmax 2 1 23 STD12N65M5 8.5 A 70 W 1 STF12N65M5 8.5 A(1) 25 W IPAK TO-220 STI12N65M5 710 V < 0.43 Ω 8.5 A 70 W 3 1 STP12N65M5 8.5 A 70 W DPAK STU12N65M5 8.5 A 70 W 1. Limited only by maximum temperature allowed. 123 123 ■ Worldwide best R * area DS(on) I²PAK TO-220FP ■ Higher V rating and high dv/dt capability DSS ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Figure 1. Internal schematic diagram Applications (cid:36)(cid:8)(cid:18)(cid:9) Switching applications Description These devices are N-channel MDmesh™ V (cid:39)(cid:8)(cid:17)(cid:9) Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The (cid:51)(cid:8)(cid:19)(cid:9) resulting product has extremely low on- resistance, which is unmatched among silicon- (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging STD12N65M5 DPAK Tape and reel STF12N65M5 TO-220FP Tube STI12N65M5 12N65M5 I²PAK Tube STP12N65M5 TO-220 Tube STU12N65M5 IPAK Tube June 2011 Doc ID 15428 Rev 5 1/23 www.st.com 23

Contents STD/F/I/P/U12N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, IPAK, TO-220FP DPAK, I²PAK V Drain-source voltage (V = 0) 650 V DS GS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 °C 8.5 8.5 (1) A D C I Drain current (continuous) at T = 100 °C 5.4 5.4 (1) A D C I (2) Drain current (pulsed) 34 34 (1) A DM P Total dissipation at T = 25 °C 70 25 W TOT C Avalanche current, repetitive or not- I 2.5 A AR repetitive (pulse width limited by T max) j Single pulse avalanche energy E 150 mJ AS (starting T = 25 °C, I = I , V = 50 V) j D AR DD dv/dt (3) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature - 55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. I ≤ 8.5 A, di/dt ≤ 400 A/µs; V < V ,V SD Peak (BR)DSS DD = 400 V T able 3. Thermal data Value Symbol Parameter Unit DPAK IPAK I²PAK TO-220 TO-220FP Thermal resistance junction-case R 1.79 5 °C/W thj-case max Thermal resistance junction- R 100 62.5 °C/W thj-amb ambient max Thermal resistance junction-pcb R (1) 50 °C/W thj-pcb max Maximum lead temperature for T 300 °C l soldering purpose 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 15428 Rev 5 3/23

Electrical characteristics STD/F/I/P/U12N65M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 650 V (BR)DSS breakdown voltage D GS Zero gate voltage V = Max rating 1 µA I DS DSS drain current (V = 0) V = Max rating, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 4.3 A 0.39 0.43 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 900 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 22 - pF Coss Reverse transfer VGS = 0 2 pF rss capacitance Equivalent C (1) capacitance time - 64 - pF o(tr) related V = 0 to 520 V, V = 0 DS GS Equivalent C (2) capacitance energy - 21 - pF o(er) related Intrinsic gate R f = 1 MHz open drain - 2.5 - Ω G resistance Q Total gate charge V = 520 V, I = 4.25 A, 20 nC g DD D Q Gate-source charge V = 10 V - 4.8 - nC gs GS Q Gate-drain charge (see Figure20) 8.3 nC gd 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C when oss V increases from 0 to 80% V DS DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V increases from 0 to 80% V DS DSS 4/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td (v) Voltage delay time VDD = 400 V, ID = 5 A, 22.6 ns tr (v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 17.6 - ns tf (i) Current fall time (see Figure21 and 15.6 ns t (off) Crossing time Figure24) 23.4 ns c Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 8.5 A SD I (1) Source-drain current (pulsed) 34 A SDM V (2) Forward on voltage I = 8.5 A, V = 0 1.5 V SD SD GS t Reverse recovery time 230 ns rr I = 8.5 A, di/dt = 100 A/µs Q Reverse recovery charge SD 2.2 µC rr V = 100 V (see Figure24) I Reverse recovery current DD 19 A RRM t Reverse recovery time I = 8.5 A, di/dt = 100 A/µs 280 ns rr SD Q Reverse recovery charge V = 100 V, T = 150 °C 2.7 µC rr DD j I Reverse recovery current (see Figure24) 19 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15428 Rev 5 5/23

Electrical characteristics STD/F/I/P/U12N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and Figure 3. Thermal impedance for TO-220 and I²PAK I²PAK ID AM05572v1 (A) 101 OpeLriatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100m0µsµss 10ms Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP (cid:41)(cid:36) (cid:33)(cid:45)(cid:16)(cid:21)(cid:21)(cid:23)(cid:19)(cid:86)(cid:17) (cid:8)(cid:33)(cid:9) (cid:17)(cid:16)(cid:17) (cid:47)(cid:80)(cid:69)(cid:82)(cid:65)(cid:84)(cid:77)(cid:73)(cid:73)(cid:84)(cid:79)(cid:69)(cid:78)(cid:0)(cid:68)(cid:73)(cid:0)(cid:78)(cid:66)(cid:0)(cid:84)(cid:89)(cid:0)(cid:72)(cid:73)(cid:77)(cid:83)(cid:0)(cid:65)(cid:65)(cid:88)(cid:82)(cid:0)(cid:69)(cid:50)(cid:65)(cid:0)(cid:36)(cid:73)(cid:51)(cid:83)(cid:8)(cid:79)(cid:78)(cid:9) (cid:17)(cid:17)(cid:16)(cid:16)(cid:16)(cid:151)(cid:151)(cid:83)(cid:83) (cid:44)(cid:73) (cid:17)(cid:77)(cid:83) (cid:52)(cid:74)(cid:29)(cid:17)(cid:21)(cid:16)(cid:160)(cid:35) (cid:17)(cid:16)(cid:77)(cid:83) (cid:16)(cid:14)(cid:17) (cid:52)(cid:67)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:51)(cid:73)(cid:78)(cid:76)(cid:71)(cid:69) (cid:80)(cid:85)(cid:76)(cid:83)(cid:69) (cid:16)(cid:14)(cid:16)(cid:17) (cid:16)(cid:14)(cid:17) (cid:17) (cid:17)(cid:16) (cid:17)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK (cid:41)(cid:36) (cid:33)(cid:45)(cid:16)(cid:21)(cid:21)(cid:23)(cid:20)(cid:86)(cid:17) (cid:8)(cid:33)(cid:9) (cid:17)(cid:16)(cid:17) (cid:47)(cid:80)(cid:69)(cid:82)(cid:65)(cid:84)(cid:77)(cid:73)(cid:73)(cid:84)(cid:79)(cid:69)(cid:78)(cid:0)(cid:68)(cid:73)(cid:0)(cid:78)(cid:66)(cid:0)(cid:84)(cid:89)(cid:0)(cid:72)(cid:73)(cid:77)(cid:83)(cid:0)(cid:65)(cid:65)(cid:88)(cid:82)(cid:0)(cid:69)(cid:50)(cid:65)(cid:0)(cid:36)(cid:73)(cid:51)(cid:83)(cid:8)(cid:79)(cid:78)(cid:9) (cid:17)(cid:17)(cid:16)(cid:16)(cid:16)(cid:151)(cid:151)(cid:83)(cid:83) (cid:44)(cid:73) (cid:17)(cid:77)(cid:83) (cid:17)(cid:16)(cid:77)(cid:83) (cid:52)(cid:74)(cid:29)(cid:17)(cid:21)(cid:16)(cid:160)(cid:35) (cid:16)(cid:14)(cid:17) (cid:52)(cid:67)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:51)(cid:73)(cid:78)(cid:76)(cid:71)(cid:69) (cid:80)(cid:85)(cid:76)(cid:83)(cid:69) (cid:16)(cid:14)(cid:16)(cid:17) (cid:16)(cid:14)(cid:17) (cid:17) (cid:17)(cid:16) (cid:17)(cid:16)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) 6/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM05575v1 AM05576v1 ID ID (A) (A) VGS=10V 14 12 VDS= 20V 12 10 7V 10 8 8 6 6 6V 4 4 2 2 5V 0 0 0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance VGS AM60050578v1 RDS(on) AM05577v1 (V) (Ω) VDD=520V 12 VDS ID=4.25A 500 0.43 VGS= 10V 0.38 10 400 0.33 8 300 0.28 6 0.23 200 4 0.18 100 2 0.13 0 0 0.08 0 5 10 15 20 Qg(nC) 0 1 2 3 4 5 6 7 8 9 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM05579v1 AM05580v1 Eoss(µJ) (pF) 4.0 3.5 1000 Ciss 3.0 2.5 100 2.0 1.5 Coss 10 1.0 0.5 Crss 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Doc ID 15428 Rev 5 7/23

Electrical characteristics STD/F/I/P/U12N65M5 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) AM05581v1 RDS(on) AM05501v2 (norm) (norm) 1.10 2.1 ID= 4.25 A 1.9 VGS= 10 V 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C) Figure 16. Source-drain diode forward Figure 17. Normalized B @ 1 mA vs VDSS characteristics temperature VSD AM05584v1 BVDSS AM05583v1 (V) TJ=-50°C (norm) 1.2 1.07 TJ=25°C 1.05 1.0 1.03 0.8 1.01 0.6 0.99 TJ=150°C 0.4 0.97 0.2 0.95 0 0.93 0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) Figure 18. Switching losses vs gate resistance (1) E AM05585v1 (µJ) Eon 60 ID=5A VDD=400V 50 40 30 Eoff 20 10 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load (cid:54)(cid:36)(cid:36) (cid:17)(cid:18)(cid:54) (cid:20)(cid:23)(cid:75)(cid:0) (cid:17)(cid:75)(cid:0) (cid:17)(cid:16)(cid:16)(cid:78)(cid:38) (cid:50)(cid:44) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:0)(cid:38) (cid:0)(cid:38) (cid:54)(cid:36)(cid:36) (cid:41)(cid:39)(cid:29)(cid:35)(cid:47)(cid:46)(cid:51)(cid:52) (cid:54)(cid:36) (cid:54)(cid:73)(cid:29)(cid:18)(cid:16)(cid:54)(cid:29)(cid:54)(cid:39)(cid:45)(cid:33)(cid:56) (cid:17)(cid:16)(cid:16)(cid:0) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:54)(cid:39)(cid:51) (cid:18)(cid:18)(cid:16)(cid:16) (cid:50)(cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:0)(cid:38) (cid:18)(cid:14)(cid:23)(cid:75)(cid:0) (cid:54)(cid:39) (cid:48)(cid:55) (cid:20)(cid:23)(cid:75)(cid:0) (cid:17)(cid:75)(cid:0) (cid:48)(cid:55) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:24)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:25)(cid:86)(cid:17) Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit (cid:44) (cid:33) (cid:33) (cid:33) (cid:36) (cid:38)(cid:33)(cid:51)(cid:52) (cid:44)(cid:29)(cid:17)(cid:16)(cid:16)(cid:0)(cid:40) (cid:54)(cid:36) (cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:36)(cid:41)(cid:47)(cid:36)(cid:37) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:0)(cid:38) (cid:0)(cid:38) (cid:54)(cid:36)(cid:36) (cid:51) (cid:34) (cid:19)(cid:14)(cid:19) (cid:17)(cid:16)(cid:16)(cid:16) (cid:34) (cid:34) (cid:0)(cid:38) (cid:0)(cid:38) (cid:18)(cid:21)(cid:0) (cid:36) (cid:54)(cid:36)(cid:36) (cid:41)(cid:36) (cid:39) (cid:50)(cid:39) (cid:51) (cid:54)(cid:73) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:48)(cid:87) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:16)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:17)(cid:86)(cid:17) Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform (cid:54)(cid:8)(cid:34)(cid:50)(cid:9)(cid:36)(cid:51)(cid:51) (cid:41)(cid:78)(cid:68)(cid:85)(cid:67)(cid:84)(cid:73)(cid:86)(cid:69)(cid:0)(cid:44)(cid:79)(cid:65)(cid:68)(cid:0)(cid:52)(cid:85)(cid:82)(cid:78)(cid:13)(cid:79)(cid:70)(cid:70) (cid:41)(cid:68) (cid:54)(cid:36) (cid:25)(cid:16)(cid:5)(cid:54)(cid:68)(cid:83) (cid:25)(cid:16)(cid:5)(cid:41)(cid:68) (cid:84)(cid:68)(cid:8)(cid:86)(cid:9) (cid:41)(cid:36)(cid:45) (cid:54)(cid:71)(cid:83) (cid:25)(cid:16)(cid:5)(cid:54)(cid:71)(cid:83) (cid:79)(cid:79)(cid:78)(cid:78) (cid:41)(cid:36) (cid:54)(cid:71)(cid:83)(cid:8)(cid:41)(cid:8)(cid:84)(cid:9)(cid:9)(cid:9)(cid:9) (cid:54)(cid:36)(cid:36) (cid:54)(cid:36)(cid:36) (cid:17)(cid:16)(cid:5)(cid:54)(cid:68)(cid:83) (cid:17)(cid:16)(cid:5)(cid:41)(cid:68) (cid:54)(cid:68)(cid:83) (cid:84)(cid:82)(cid:8)(cid:86)(cid:9) (cid:84)(cid:70)(cid:8)(cid:73)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:18)(cid:86)(cid:17) (cid:84)(cid:67)(cid:8)(cid:79)(cid:70)(cid:70)(cid:9) (cid:33)(cid:45)(cid:16)(cid:21)(cid:21)(cid:20)(cid:16)(cid:86)(cid:17) Doc ID 15428 Rev 5 9/23

Package mechanical data STD/F/I/P/U12N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Package mechanical data Table 8. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Doc ID 15428 Rev 5 11/23

Package mechanical data STD/F/I/P/U12N65M5 Figure 25. DPAK (TO-252) drawing 0068772_H Figure 26. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters 12/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Package mechanical data Table 9. IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10 o Doc ID 15428 Rev 5 13/23

Package mechanical data STD/F/I/P/U12N65M5 Figure 27. IPAK (TO-251) drawing 0068771_H AM09214V1 14/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Package mechanical data Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 15428 Rev 5 15/23

Package mechanical data STD/F/I/P/U12N65M5 Figure 28. I²PAK (TO-262) drawing 0015988_typeA_Rev_S 16/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Doc ID 15428 Rev 5 17/23

Package mechanical data STD/F/I/P/U12N65M5 Figure 29. TO-220 type A drawing 0015988_typeA_Rev_S 18/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Package mechanical data T able 12. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 30. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_K Doc ID 15428 Rev 5 19/23

Packaging mechanical data STD/F/I/P/U12N65M5 5 Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 20/23 Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5 Packaging mechanical data Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 15428 Rev 5 21/23

Revision history STD/F/I/P/U12N65M5 6 Revision history T able 14. Document revision history Date Revision Changes 24-Feb-2009 1 First release 27-Feb-2009 2 Corrected package information on first page 21-Jan-2010 3 Document status promoted from preliminary data to datasheet – Figure15: Normalized on resistance vs temperature has been 29-Jun-2010 4 updated – V vale in Table4 has been corrected GS Updated Figure18 and Figure20. 22-Jun-2011 5 Updated gate charge in Table5 and switching time in Table6. 22/23 Doc ID 15428 Rev 5

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