ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET,MOSFET - 单 > STB95N4F3
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STB95N4F3产品简介:
ICGOO电子元器件商城为您提供STB95N4F3由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB95N4F3价格参考¥6.70-¥6.70。STMicroelectronicsSTB95N4F3封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 40V 80A(Tc) 110W(Tc) D2PAK。您可以下载STB95N4F3参考资料、Datasheet数据手册功能说明书,资料中有STB95N4F3 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 40V 80A D2PAKMOSFET N-Ch 40V 5.0mOhm 80A STripFET III |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 80 A |
Id-连续漏极电流 | 80 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STB95N4F3STripFET™ III |
数据手册 | |
产品型号 | STB95N4F3 |
Pd-PowerDissipation | 110 W |
Pd-功率耗散 | 110 W |
Qg-GateCharge | 40 nC |
Qg-栅极电荷 | 40 nC |
RdsOn-Drain-SourceResistance | 5.8 mOhms |
RdsOn-漏源导通电阻 | 5.8 mOhms |
Vds-Drain-SourceBreakdownVoltage | 40 V |
Vds-漏源极击穿电压 | 40 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
Vgs-栅源极击穿电压 | 20 V |
上升时间 | 50 ns |
下降时间 | 15 ns |
不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
不同Vds时的输入电容(Ciss) | 2200pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 54nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 5.8 毫欧 @ 40A,10V |
产品种类 | MOSFET |
供应商器件封装 | D²PAK |
其它名称 | 497-12427-6 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1164/PF253024?referrer=70071840 |
典型关闭延迟时间 | 40 ns |
功率-最大值 | 110W |
包装 | Digi-Reel® |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
封装/箱体 | D2PAK-2 |
工厂包装数量 | 1000 |
晶体管极性 | N-Channel |
最大工作温度 | + 175 C |
最小工作温度 | - 55 C |
标准包装 | 1 |
漏源极电压(Vdss) | 40V |
电流-连续漏极(Id)(25°C时) | 80A (Tc) |
系列 | STB95N4F3 |
通道模式 | Enhancement |
配置 | Single |
STB95N4F3, STD95N4F3 STP95N4F3 Ω N-channel 40 V, 5.0 m , 80 A STripFET™ III Power MOSFET in D²PAK, DPAK, TO-220 Features R Order codes V DS(on) I Pw DSS max. D TAB TAB STB95N4F3 < 5.8 m Ω TAB STD95N4F3 40 V 80 A 110 W STP95N4F3 < 6.2 mΩ 3 3 3 1 1 1 2 ■ Standard threshold drive D²PAK DPAK TO-220 ■ 100% avalanche tested Applications ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description These devices are N-channel enhancement mode (cid:36)(cid:0)(cid:8)(cid:52)(cid:33)(cid:34)(cid:0)(cid:79)(cid:82)(cid:0)(cid:18)(cid:9) Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. (cid:39)(cid:8)(cid:17)(cid:9) (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:20)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STB95N4F3 95N4F3 D²PAK Tape and reel STD95N4F3 95N4F3 DPAK STP95N4F3 95N4F3 TO-220 Tube December 2011 Doc ID 13288 Rev 4 1/20 www.st.com 20
Contents STB95N4F3, STD95N4F3, STP95N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 40 V DS V Gate-source voltage ± 20 V GS I (1) Drain current (continuous) at T = 25 °C 80 A D C I Drain current (continuous) at T = 100 °C 65 A D C I (2) Drain current (pulsed) 320 A DM P Total dissipation at T = 25 °C 110 W TOT C Derating factor 0.73 W/°C dv/dt (3) Peak diode recovery voltage slope 8 V/ns E (4) Single pulse avalanche energy 400 mJ AS T Operating junction temperature j -55 to 175 °C T Storage temperature stg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. I ≤ 80 A, di/dt ≤ 400A/µs, V ≤ V , Tj ≤ Tjmax. SD DS (BR)DSS 4. Starting Tj = 25 °C, I = 40 A, V = 30 V. D DD Table 3. Thermal resistance Value Symbol Parameter Unit D²PAK DPAK TO-220 Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W R (1) Thermal resistance junction-ambient max 30 50 °C/W thj-pcb Tl Maximum lead temperature for soldering purpose 300 °C 1. When mounted on 1inch² FR-4 2Oz Cu board. Doc ID 13288 Rev 4 3/20
Electrical characteristics STB95N4F3, STD95N4F3, STP95N4F3 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 40 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = 40 V, 10 µA DSS current (VGS = 0) VDS = 40 V,Tc = 125 °C 100 µA Gate body leakage current IGSS (V = 0) VGS = ±20 V ±200 nA DS V Gate threshold voltage V = V , I = 250 µA 2 4 V GS(th) DS GS D Static drain-source on VGS= 10 V, ID= 40 A 5.0 5.8 mΩ R DS(on) resistance V = 10 V, I = 40 A for TO-220 5.4 6.2 mΩ GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance 2200 pF iss C Output capacitance V =25 V, f=1 MHz, V =0 - 580 pF oss DS GS C Reverse transfer capacitance 40 pF rss Q Total gate charge V =20 V, I = 80 A 40 54 nC g DD D Q Gate-source charge V =10 V - 11 nC gs GS Q Gate-drain charge (see Figure14) 8 nC gd 4/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit V =20 V, I = 40 A, t Turn-on delay time DD D 15 ns d(on) R =4.7 Ω, V =10 V - - t Rise time G GS 50 ns r (see Figure16) V =20 V, I = 40 A, t Turn-off delay time DD D 40 ns d(off) R =4.7 Ω, V =10 V - - t Fall time G GS 15 ns f (see Figure16) Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 80 A SD - I (1) Source-drain current (pulsed) 320 A SDM V (2) Forward on voltage I =80 A, V =0 - 1.5 V SD SD GS I =80 A, t Reverse recovery time SD 45 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 60 nC rr V = 30 V, Tj=150 °C I Reverse recovery current DD 2.8 A RRM (see Figure15) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13288 Rev 4 5/20
Electrical characteristics STB95N4F3, STD95N4F3, STP95N4F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature HV29000 RDS(on) (mΩ) 6.5 ID=40A VGS=10V 6.0 5.5 TO-220 DPAK, D²PAK 5.0 4.5 0 20 40 60 80 ID(A) 6/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature Figure 12. Source-drain diode forward characteristics Doc ID 13288 Rev 4 7/20
Test circuits STB95N4F3, STD95N4F3, STP95N4F3 3 Test circuits Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13288 Rev 4 9/20
Package mechanical data STB95N4F3, STD95N4F3, STP95N4F3 Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° 10/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data Figure 19. D²PAK (TO-263) drawing 0079457_S Figure 20. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 13288 Rev 4 11/20
Package mechanical data STB95N4F3, STD95N4F3, STP95N4F3 Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° 12/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data Figure 21. DPAK (TO-252) drawing 0068772_H Figure 22. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 b. All dimension are in millimeters Doc ID 13288 Rev 4 13/20
Package mechanical data STB95N4F3, STD95N4F3, STP95N4F3 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 13288 Rev 4 15/20
Packaging mechanical data STB95N4F3, STD95N4F3, STP95N4F3 5 Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 16/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 13288 Rev 4 17/20
Packaging mechanical data STB95N4F3, STD95N4F3, STP95N4F3 Figure 24. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 25. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 18/20 Doc ID 13288 Rev 4
STB95N4F3, STD95N4F3, STP95N4F3 Revision history 6 Revision history T able 13. Dcument revision history Date Revision Changes 22-Feb-2007 1 First release 15-May-2007 2 Changes on applications 10-Sep-2009 3 Removed package, mechanical data: IPAK New package and mechanical data have been added: – Table8: D²PAK (TO-263) mechanical data, Figure19: D²PAK (TO-263) drawing, Figure20: D²PAK footprint 13-Dec-2011 4 Section5: Packaging mechanical data has been updated: – Table11: D²PAK (TO-263) tape and reel mechanical data, Figure24: Tape, Figure25: Reel. Minor text changes. Doc ID 13288 Rev 4 19/20
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