STB80NF55L-06 STP80NF55L-06 W N-CHANNEL 55V - 0.005 - 80A D²PAK/TO-220 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 W 80 A STP80NF55L-06 55 V < 0.0065 W 80 A n TYPICAL RDS(on) = 0.005 W LOW THRESHOLD DRIVE n LOGIC LEVEL DEVICE n SURFACE-MOUNTING D2PAK (TO-263) 3 n 1 3 POWER PACKAGE IN TUBE (NO SUFFIX) OR 2 1 D2PAK IN TAPE & REEL (SUFFIX “T4”) TO-263 TO-220 (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and INTERNAL SCHEMATIC DIAGRAM less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n MOTOR CONTROL, AUDIO AMPLIFIERS n DC-DC & DC-AC CONVERTERS n AUTOMOTIVE n ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 kW ) 55 V VGS Gate- source Voltage ± 16 V ID(#) Drain Current (continuous) at TC = 25°C 80 A ID Drain Current (continuous) at TC = 100°C 80 A IDM(•) Drain Current (pulsed) 320 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns EAS (2) Single Pulse Avalanche Energy 1.3 J Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature ((•#)) PCuulrsree nwt ildimthi tleimd ibteyd t hsaef ep aocpkeargaeting area ((12)) SIStDa r£ti8n0gA T, j d=i/ d2t5 £ o4C0,0 IAD/ µ=s 4, 0VAD,D V £D DV (=B R3)5DVSS, Tj £ TJMAX January 2003 1/10 NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55L-06 @ B80NF55L-06 @

STB80NF55L-06 STP80NF55L-06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID = 250 µA, VGS = 0 55 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA IGSS Gate-body Leakage VGS = ± 16 V ±100 nA Current (VDS = 0) ON (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 V RDS(on) Static Drain-source On VGS = 10 V ID = 40 A 0.005 0.0065 W Resistance VGS = 5 V ID = 40 A 0.0055 0.008 W DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 15 V ID=40 A 150 S Ciss Input Capacitance VDS = 25V f = 1 MHz VGS = 0 4850 pF Coss Output Capacitance 1040 pF Crss Reverse Transfer 375 pF Capacitance 2/10

STB80NF55L-06 STP80NF55L-06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 27 V ID = 40 A 32 ns tr Rise Time RG=4.7 W VGS = 4.5 V 180 ns (Resistive Load, Figure 3) Qg Total Gate Charge VDD= 44V ID= 80A VGS= 5V 100 136 nC Qgs Gate-Source Charge 18 nC Qgd Gate-Drain Charge 53 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off Delay Time VDD = 27 V ID = 40 A 135 ns tf Fall Time RG=4.7W, VGS = 4.5 V 80 ns (Resistive Load, Figure 3) SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 80 A ISDM (•) Source-drain Current (pulsed) 320 A VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.5 V trr Reverse Recovery Time ISD = 80 A di/dt = 100A/µs 100 ns Qrr Reverse Recovery Charge VDD = 25 V Tj = 150°C 310 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 6.2 A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10

STB80NF55L-06 STP80NF55L-06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10

STB80NF55L-06 STP80NF55L-06 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. .. .. 5/10

STB80NF55L-06 STP80NF55L-06 FFiigg.. 11:: UUnnccllaammppeedd IInndduuccttiivvee LLooaadd TTeesstt CCiirrccuuiitt Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10

STB80NF55L-06 STP80NF55L-06 D2PAK MECHANICAL DATA mm. inch. DIM. MIN. TYP. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 8° 0° 8° 7/10

STB80NF55L-06 STP80NF55L-06 TO-220 MECHANICAL DATA mm. inch. DIM. MIN. TYP. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 8/10

STB80NF55L-06 STP80NF55L-06 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 9/10

STB80NF55L-06 STP80NF55L-06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (cid:226) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10

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