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STB80NF55-06T4产品简介:
ICGOO电子元器件商城为您提供STB80NF55-06T4由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB80NF55-06T4价格参考。STMicroelectronicsSTB80NF55-06T4封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 55V 80A(Tc) 300W(Tc) D2PAK。您可以下载STB80NF55-06T4参考资料、Datasheet数据手册功能说明书,资料中有STB80NF55-06T4 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 55V 80A D2PAKMOSFET N-Ch 55 Volt 80 Amp |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 80 A |
Id-连续漏极电流 | 80 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STB80NF55-06T4STripFET™ II |
数据手册 | |
产品型号 | STB80NF55-06T4 |
Pd-PowerDissipation | 300 W |
Pd-功率耗散 | 300 W |
RdsOn-Drain-SourceResistance | 6.5 mOhms |
RdsOn-漏源导通电阻 | 6.5 mOhms |
Vds-Drain-SourceBreakdownVoltage | 55 V |
Vds-漏源极击穿电压 | 55 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
Vgs-栅源极击穿电压 | +/- 20 V |
上升时间 | 155 ns |
下降时间 | 65 ns |
不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
不同Vds时的输入电容(Ciss) | 4400pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 189nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 6.5 毫欧 @ 40A,10V |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26067 |
产品目录页面 | |
产品种类 | Power MOSFET Transistors |
供应商器件封装 | D2PAK |
其它名称 | 497-6558-2 |
典型关闭延迟时间 | 125 ns |
功率-最大值 | 300W |
包装 | 带卷 (TR) |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
导通电阻 | 6.5 mOhms |
封装 | Reel |
封装/外壳 | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
封装/箱体 | D2PAK-2 |
工厂包装数量 | 1000 |
晶体管极性 | N-Channel |
最大工作温度 | + 175 C |
最小工作温度 | - 55 C |
标准包装 | 1,000 |
正向跨导-最小值 | 150 S |
汲极/源极击穿电压 | 55 V |
漏极连续电流 | 80 A |
漏源极电压(Vdss) | 55V |
电流-连续漏极(Id)(25°C时) | 80A (Tc) |
系列 | STB80NF55 |
通道模式 | Enhancement |
配置 | Single |
STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP Ω 2 2 N-channel 55V - 0.005 - 80A - TO-220 /FP - I PAK - D PAK STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STB80NF55-06 55V <0.0065Ω 80A (1) STB80NF55-06-1 55V <0.0065Ω 80A(1) 23 123 1 STP80NF55-06 55V <0.0065Ω 80A (1) TO-220 TO-220FP STP80NF55-06FP 55V <0.0065Ω 60A (1) 1. Limited by package ■ Exceptional dv/dt capability 3 ■ 100% avalanche tested 1 123 D²PAK I²PAK ■ Application oriented characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Part number Marking Package Packaging STB80NF55-06T4 B80NF55-06 D²PAK Tape & reel STB80NF55-06-1 B80NF55-06-1 I²PAK Tube STP80NF55-06 P80NF55-06 TO-220 Tube STP80NF55-06FP P80NF55-06FP TO-220FP Tube October 2006 Rev 8 1/17 www.st.com 17
Contents STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 / D²/ I²PAK TO-220FP V Drain-source voltage (V = 0) 55 V DS GS V Gate-source voltage ± 20 V GS ID (1) Drain current (continuous) at TC = 25°C 80 60 (2) A ID (1) Drain current (continuous) at TC=100°C 80 42 (2) A IDM(3) Drain current (pulsed) 320 240 (2) A P Total dissipation at T = 25°C 300 45 W TOT C Derating factor 2 0.30 W/°C dv/dt (4) Peak diode recovery voltage slope 7 V/ns E (5) Single pulse avalanche energy 1.3 J AS V Insulation withstand voltage (DC) -- 2500 V ISO TJ Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Limited by Package 2. Limited only by maximum temperature allowed 3. Pulse width limited by safe operating area 4. ) I ≤ 80A, di/dt ≤ 400A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX 5. Starting T = 25 oC, I = 40A, V = 45V J D DD Table 2. Thermal data Value Symbol Parameter Unit TO-220 / D²/ I²PAK TO-220FP R Thermal resistance junction-case max 0.5 3.33 °C/W thJC R Thermal resistance junction-ambient max 62.5 °C/W thJA Maximum lead temperature for soldering T 300 °C l purpose 3/17
Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Dvorlataing-esource breakdown ID = 250µA, VGS= 0 55 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating @125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±20V ±100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V Static drain-source on RDS(on) resistance VGS= 10V, ID= 40A 0.005 0.0065 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS =15V, ID = 40A 150 S C Input capacitance iss 4400 pF Coss Output capacitance VDS =25V, f=1 MHz, VGS=0 1020 pF Reverse transfer Crss 350 pF capacitance Qg Total gate charge V = 44V, I = 80A 142 189 nC DD D Qgs Gate-source charge 29 nC V =10V Q Gate-drain charge GS 60.5 nC gd 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time 27 ns V = 50 V, I = 40A, tr Rise time RDD=4.7Ω, VD =10V 155 ns t Turn-off delay time G GS 125 ns d(off) (see Figure15) t Fall time 65 ns f 4/17
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A I (1) Source-drain current (pulsed) 320 A SDM VSD(2) Forward on voltage ISD=80A, VGS=0 1.5 V trr Reverse recovery time ISD=80A, 100 ns Qrr Reverse recovery charge di/dt = 100A/µs, 0.32 µC IRRM Reverse recovery current VDD=35V, TJ = 150°C 6.5 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/17
Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ Figure 2. Thermal impedance for TO-220/ D²PAK/ I²PAK D²PAK/ I²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/17
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs vs temperature temperature 7/17
Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Figure 13. Source-drain diode forward Figure 14. Normalized B vs temperature VDSS characteristics 8/17
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform 9/17
Package mechanical data STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Package mechanical data TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/17
Package mechanical data STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 12/17
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Package mechanical data TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 13/17
Package mechanical data STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 14/17
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/17
Revision history STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 6 Revision history T able 7. Revision history Date Revision Changes 21-Jun-2004 5 Complete version 13-Mar-2005 6 Package inserted: I2PAK 20-Jul-2006 7 New template, no content change 24-Oct-2006 8 Corrected value on Table 1.: Absolute maximum ratings 16/17
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