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  • 型号: STB40NF20
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STB40NF20产品简介:

ICGOO电子元器件商城为您提供STB40NF20由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB40NF20价格参考。STMicroelectronicsSTB40NF20封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 200V 40A(Tc) 160W(Tc) D2PAK。您可以下载STB40NF20参考资料、Datasheet数据手册功能说明书,资料中有STB40NF20 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 200V 40A D2PAKMOSFET Low charge STripFET

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

40 A

Id-连续漏极电流

40 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STB40NF20STripFET™

数据手册

点击此处下载产品Datasheet

产品型号

STB40NF20

Pd-PowerDissipation

160 W

Pd-功率耗散

160 W

RdsOn-Drain-SourceResistance

45 mOhms

RdsOn-漏源导通电阻

45 mOhms

Vds-Drain-SourceBreakdownVoltage

200 V

Vds-漏源极击穿电压

200 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

44 ns

下降时间

22 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

2500pF @ 25V

不同Vgs时的栅极电荷(Qg)

75nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

45 毫欧 @ 20A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

D2PAK

其它名称

497-5804-2

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1166/PF157952?referrer=70071840

典型关闭延迟时间

74 ns

功率-最大值

160W

包装

带卷 (TR)

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2PAK-2

工厂包装数量

1000

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1,000

正向跨导-最小值

30 S

漏源极电压(Vdss)

200V

电流-连续漏极(Id)(25°C时)

40A (Tc)

系列

STB40NF20

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 Ω 2 N-channel 200V - 0.038 -40A- D PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET Features Type V R I P DSS DS(on) D W STB40NF20 200V <0.045Ω 40A 160W 3 3 1 STP40NF20 200V <0.045Ω 40A 160W 1 2 D2PAK STF40NF20 200V <0.045Ω 40A 40W TO-220 STW40NF20 200V <0.045Ω 40A 160W ■ Gate charge minimized ■ Very low intrinsic capacitances 3 ■ Very good manufacturing repeatability 12 TO-220FP TO-247 ■ Excellent figure of merit (R *Q ) DS g ■ 100% avalanche tested Description Figure 1. Internal schematic diagram This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters. Applications ■ Switching application Table 1. Device summary Order codes Marking Package Packaging STB40NF20 40NF20 D2PAK Tape & reel STP40NF20 40NF20 TO-220 Tube STF40NF20 40NF20 TO-220FP Tube STW40NF20 40NF20 TO-247 Tube July 2007 Rev 2 1/17 www.st.com 17

Contents STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value TO-220 Symbol Parameter Unit D2PAK TO-220FP TO-247 V Drain-source voltage (V = 0) 200 V DS GS V Gate- source voltage ± 20 V GS I (1) Drain current (continuous) at T = 25°C 40 A D C I (1) Drain current (continuous) at T = 100°C 25 A D C I (2) Drain current (pulsed) 160 A DM P Total dissipation at T = 25°C 160 40 W tot C Derating Factor 1.28 0.32 W/°C dv/dt (3) Peak diode recovery voltage slope 12 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink -- 2500 V ISO (t = 1s; Tc = 25°C) T Storage temperature stg -55 to 150 °C T Max. operating junction temperature j 1. Value limited by wire bonding 2. Pulse width limited by safe operating area. 3. I ≤ 40A, di/dt ≤ 200A/µs, V ≤ V , Tj ≤ T SD DD (BR)DSS JMAX Table 2. Thermal data TO-220 Symbol Parameter TO-247 TO-220FP Unit D2PAK Rthj-case Thermal resistance junction-case max 0.78 3.1 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 62.5 °C/W Maximum lead temperature for soldering T 300 °C J purpose(1) 1. for 10 sec. 1.6mm from case Table 3. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not-repetitive I 40 A AR (pulse width limited by T max) j Single pulse avalanche energy E 230 mJ AS (starting T = 25 °C, I = I , V = 50 V) j D AR DD 3/17

Electrical characteristics STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1mA, V =0 200 V (BR)DSS breakdown voltage D GS Zero gate voltage V = max ratings 1 µA I DS DSS drain current (V = 0) V = max ratings@125°C 10 µA GS DS Gate-body leakage I V = ± 20V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 2 3 4 V GS(th) DS GS D Static drain-source on R V = 10V, I = 20A 0.038 0.045 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15V, I =20A 30 S fs transconductance DS D Input capacitance C 2500 pF Ciss Output capacitance VDS = 25V, f = 1MHz, 510 pF Coss Reverse transfer VGS = 0 78 pF rss capacitance t Turn-on delay time 20 ns d(on) V = 100V, I = 20A t Rise time DD D 44 ns r R =4.7Ω V = 10V t Turn-off delay time G GS 74 ns d(off) (see Figure17) t Fall time 22 ns f Q Total gate charge V = 160V, I = 40A, 75 nC g DD D Q Gate-source charge V = 10V 13.2 nC gs GS Q Gate-drain charge (see Figure18) 35.5 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 40 A SD Source-drain current I (1) 160 A SDM (pulsed) V (2) Forward on voltage I = 20A, V = 0 1.5 V SD SD GS I = 20A, t Reverse recovery time SD 192 ns rr di/dt = 100A/µs, Q Reverse recovery charge 922 nC rr V = 25V I Reverse recovery current DD 9.6 A RRM (see Figure19) I = 20A, t Reverse recovery time SD 242 ns rr di/dt = 100A/µs, Q Reverse recovery charge 1440 nC rr V = 25V, T = 150°C I Reverse recovery current DD j 11.9 A RRM (see Figure19) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/17

Electrical characteristics STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/ Figure 3. Thermal impedance area for TO-220/ D2PAK D2PAK Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP 6/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/17

Electrical characteristics STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature Figure 16. Source-drain diode forward characteristics 8/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Test circuit 3 Test circuit Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/17

Package mechanical data STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 11/17

Package mechanical data STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 12/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Package mechanical data TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 13/17

Package mechanical data STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 14/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/17

Revision history STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 6 Revision history T able 7. Revision history Date Revision Changes 25-Jan-2007 1 First version 06-Jul-2007 2 Correctet Ptot value on Features 16/17

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 17/17

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