STB32N65M5 Datasheet N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFET in D²PAK package Features TAB Order codes VDS at Tjmax. RDS(on) max. ID STB32N65M5 710 V 119 mΩ 24 A 2 3 • Extremely low RDS(on) 1 • Low gate charge and input capacitance D²PAK • Excellent switching performance • 100% avalanche tested D(2, TAB) Applications • Switching applications Description G(1) This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly S(3) suitable for applications requiring high power and superior efficiency. AM01475v1_noZen Product status link STB32N65M5 Product summary Order code STB32N65M5 Marking 32N65M5 Package D2PAK Packing Tape and reel DS6032 - Rev 5 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.

STB32N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 24 A ID Drain current (continuous) at TC = 100 °C 15 A IDM (1) Drain current (pulsed) 96 A PTOT Total power dissipation at TC = 25 °C 150 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 24 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.83 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 30 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 8 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 650 mJ DS6032 - Rev 5 page 2/17

STB32N65M5 Electrical characteristics 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 650 V VDS = 650 V, VGS = 0 V, 1 µA IDSS Zero gate voltage drain current VDS = 650 V, VGS = 0 V, 100 µA TC = 125 °C (1) IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 12 A 95 119 mΩ 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance 3320 Coss Output capacitance VVDGSS == 100 V0 V, f = 1 MHz, - 75 - pF Crss Reverse transfer capacitance 5 Co(tr) (1) Equivalent capacitance time related - 210 - pF Equivalent capacitance energy VGS = 0 V, VDS = 0 to 520 V Co(er) (2) related - 70 - pF Rg Gate input resistance f = 1 MHz, ID= 0 A - 2 - Ω Qg Total gate charge VDD = 520 V, ID = 12 A, 72 Qgs Gate-source charge VGS = 0 to 10 V - 17 - nC (see Figure 15. Test circuit for Qgd Gate-drain charge gate charge behavior) 29 1. Co(tr) time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Co(er) energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(off) Turn-off delay time VDD = 400 V, ID = 15 A, 53 tr Rise time RG = 4.7 Ω, VGS = 10 V 12 tc Cross time (see Figure 16. Test circuit for - 29 - ns inductive load switching and diode recovery times and tf Fall time Figure 19. Switching time 16 waveform) DS6032 - Rev 5 page 3/17

STB32N65M5 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 24 - A ISDM (1) Source-drain current (pulsed) 96 VSD (2) Forward on voltage ISD = 24 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs 375 ns Qrr Reverse recovery charge VDD = 60 V (see - 6 µC Figure 16. Test circuit for inductive load switching and IRRM Reverse recovery current 33 A diode recovery times) trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs 440 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C 8 µC - (see Figure 16. Test circuit for IRRM Reverse recovery current inductive load switching and 36 A diode recovery times) 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6032 - Rev 5 page 4/17

STB32N65M5 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area Figure 2. Thermal impedance ID AM05448v1 K GC20540_ZTH (A) δ=0.5 10 OpeLriatmiitoen dinb ty hismaaxr eRaDiSs(on) 11000µµss 10-1 δ=0.2 0.05 0.1 1ms 0.02 0.01 1 Tj=150°C 10ms Tc=25°C Single pulse Sinlge pulse 0.1 10-2 0.1 1 10 100 VDS(V) 10-5 10-4 10-3 10-2 10-1 tp(s) Figure 3. Output characterisics Figure 4. Transfer characteristics ID AM05451v1 ID AM05452v1 (A) VGS=10V VDS=20V 50 40 30 30 20 20 10 10 0 0 0 10 30 VDS 0 2 4 6 8 10 VGS(V) Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on resistance VGS AM05457v1 VDS RDS(on) AM05454v1 (Ω) VDD=520V 12 DS ID=12A 480 0.111 10 0.091 8 3 0.071 6 0.051 4 2 80 0.031 0 0.011 0 20 40 60 80 Qg 0 5 10 15 ID(A) DS6032 - Rev 5 page 5/17

STB32N65M5 Electrical characteristics curves Figure 7. Capacitance variations Figure 8. Output capacitance stored energy C AM05455v1 Eoss AM05456v1 (pF) (µJ) 14 10000 12 Ciss 10 1000 8 100 Coss 6 4 10 Crss 2 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Figure 9. Normalized gate threshold voltage vs Figure 10. Normalized on resistance vs temperature temperature AM05460v1 VGS(th) AM05459v1 RDS(on) (norm) (norm) 2.1 1.10 I = 250 μA D 1.9 V = 10 V GS 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.5 0.70 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 11. Source-drain diode forward characteristics Figure 12. Normalized V(BR)DSS vs temperature VSD AM05461v1 V(BR)DSS AM05453v1 (V) TJ=-50°C 1.2 1.0 I = 1 mA D 1.03 0.8 TJ=25°C 1.01 0.6 TJ=150°C 0.99 0.4 0.97 0.2 0.95 0 3 0 10 20 30 40 50 ISD(A) -50 0 TJ DS6032 - Rev 5 page 6/17

STB32N65M5 Electrical characteristics curves Figure 13. Switching energy vs gate resistance E AM05458v1 μJ) ID=15A Eon VCL=400V 400 VGS=10V 300 Eoff 200 100 0 0 10 20 30 40 RG(Ω * Eon including reverse recovery of a SiC diode. DS6032 - Rev 5 page 7/17

STB32N65M5 Test circuits 3 Test circuits Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 + μF μF VDD VD VGS IG= CONST 100 Ω D.U.T. VGS RG D.U.T. pulse width + 2.7 kΩ 2200 VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit diode recovery times A A A L D fast 100 µH VD G D.U.T. diode 2200 3.3 25 Ω S B B B D µ3F.3 +1µ0F00 VDD ID +µF µF VDD G D.U.T. + RG S Vi D.U.T. _ pulse width AM01471v1 AM01470v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform V(BR)DSS Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay--ooffff IDM Vgs 90%Vgs oonn ID Vgs(I(t)))) VDD VDD 10%Vds 10%Id Vds TTrriissee TTffaallll AM01472v1 Tcross--over AM05540v2 DS6032 - Rev 5 page 8/17

STB32N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6032 - Rev 5 page 9/17

STB32N65M5 D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 20. D²PAK (TO-263) type A package outline 0079457_25 DS6032 - Rev 5 page 10/17

STB32N65M5 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 10.40 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.40 V2 0° 8° DS6032 - Rev 5 page 11/17

STB32N65M5 D²PAK (TO-263) type A package information Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS6032 - Rev 5 page 12/17

STB32N65M5 D²PAK packing information 4.2 D²PAK packing information Figure 22. D²PAK tape outline DS6032 - Rev 5 page 13/17

STB32N65M5 D²PAK packing information Figure 23. D²PAK reel outline T 40mm min. access hole at slot location B D C N A Tape slot G measured in core for at hub Full radius tape start 2.5mm min.width AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DS6032 - Rev 5 page 14/17

STB32N65M5 Revision history Table 10. Document revision history Date Version Changes 16-Jan-2009 1 First release 01-Sep-2009 2 Document status promoted from preliminary data to datasheet. 30-Sep-2009 3 Corrected VGS value on Table 2: Absolute maximum ratings Co(er) and Co(tr) values changed in Table 5: Dynamic Table 6: Switching times parameters updates Figure 24: Switching time waveform has been corrected Minor text changes Section 4: Package mechanical data has been modified. Added: – Table 8: D²PAK (TO-263) mechanical data, Figure 25: D²PAK (TO-263) drawing and Figure 26: D²PAK footprint; – Table 9: TO-220FP mechanical data, and Figure 27: TO-220FP drawing; 06-Oct-2011 4 – Table 10: I²PAK (TO-262) mechanical data, and Figure 28: I²PAK (TO-262) drawing; – Table 11: TO-220 type A mechanical data, and Figure 29: TO-220 type A drawing; – Table 12: TO-247 mechanical data, and Figure 30: TO-247 drawing; Section 5: Packaging mechanical data has been modified. Added: – Table 13: D²PAK (TO-263) tape and reel mechanical data, Figure 31: Tape and Figure 32: Reel; The part numbers STF32N65M5, STI32N65M5, STP32N65M5, 02-Nov-2018 5 STW32N65M5 have been moved to a separate datasheet. Content reworked to improve readability, no technical changes. DS6032 - Rev 5 page 15/17

STB32N65M5 Contents Contents 1 Electrical ratings ..................................................................2 2 Electrical characteristics...........................................................3 2.1 Electrical characteristics curves ..................................................5 3 Test circuits .......................................................................8 4 Package information...............................................................9 4.1 D²PAK (TO-263) type A package information .......................................9 4.2 D²PAK packing information .....................................................12 Revision history .......................................................................15 DS6032 - Rev 5 page 16/17

STB32N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6032 - Rev 5 page 17/17