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  • 型号: STB30NM60ND
  • 制造商: STMicroelectronics
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STB30NM60ND产品简介:

ICGOO电子元器件商城为您提供STB30NM60ND由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB30NM60ND价格参考。STMicroelectronicsSTB30NM60ND封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 600V 25A(Tc) 190W(Tc) D2PAK。您可以下载STB30NM60ND参考资料、Datasheet数据手册功能说明书,资料中有STB30NM60ND 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 600V 25A D2PAK

产品分类

FET - 单

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

品牌

STMicroelectronics

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

STB30NM60ND

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

FDmesh™ II

不同Id时的Vgs(th)(最大值)

5V @ 250µA

不同Vds时的输入电容(Ciss)

2800pF @ 50V

不同Vgs时的栅极电荷(Qg)

100nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

130 毫欧 @ 12.5A,10V

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

D2PAK

其它名称

497-8475-1

功率-最大值

190W

包装

剪切带 (CT)

安装类型

表面贴装

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

标准包装

1

漏源极电压(Vdss)

600V

电流-连续漏极(Id)(25°C时)

25A (Tc)

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PDF Datasheet 数据手册内容提取

STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET 2 2 (with fast diode) TO-220, TO-220FP, D PAK, I PAK, TO-247 Features V @T R Type DSS J DS(on) I max max D STB30NM60ND 25 A I2 PAK 123 s ) 2 3 TO-2(47 1 STI30NM60ND 25 A t c STF30NM60ND 650 V 0.13 Ω 25 A(1) u STP30NM60ND 25 A d3 STW30NM60ND 25 A D2 PAK o1 r P 1. Limited only by maximum temperature allowed e 3 ■ The world’s best RDS(on) in TO-220 amongst TO-220 e t1 2 23 the fast recovery diode devices TO-220FP 1 l o ■ 100% avalanche tested s b ■ Low input capacitance and gate charge O Figure 1. Internal schematic diagram ■ Low gate input resistance - ■ Extremely high dv/dt and avalanche ) s capabilities ( (cid:36)(cid:8)(cid:18)(cid:9) t c u Application d o ■ Switching applicationrs P (cid:39)(cid:8)(cid:17)(cid:9) e Description t e The FDomlesh™ II series belongs to the second genesration of MDmesh™ technology. This (cid:51)(cid:8)(cid:19)(cid:9) b revolutionary Power MOSFET associates a new O vertical structure to the company's strip layout (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) and associates all advantages of reduced on- It is therefore strongly recommended for bridge resistance and fast switching with an intrinsic fast- topologies, in particular ZVS phase-shift recovery body diode. converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM60ND 30NM60ND D²PAK Tape and reel STI30NM60ND 30NM60ND I²PAK Tube STF30NM60ND 30NM60ND TO-220FP Tube STP30NM60ND 30NM60ND TO-220 Tube STW30NM60ND 30NM60ND TO-247 Tube November 2008 Rev 2 1/18 www.st.com 18

Contents STx30NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ) s 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (. . . . . 10 t c u d 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 o r P 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 2/18

STx30NM60ND Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/D2PAK Unit TO-220FP I2PAK / TO-247 V Drain-source voltage (V = 0) 600 V DS GS V Gate- source voltage ± 25 V GS ) I Drain current (continuous) at T = 25 °C 25 25(1) s A D C ( t I Drain current (continuous) at T = 100 °C 15.8 15.c8(1) A D C u I (2) Drain current (pulsed) 100 d 100(1) A DM o PTOT Total dissipation at TC = 25 °C 190 r 40 W P dv/dt(3) Peak diode recovery voltage slope 40 V/ns e Insulation withstand voltage (RMS) from t e VISO all three leads to external heat sink ol -- 2500 V (t = 1 s; T = 25 °C) C s b T Storage temperature – 55 to 150 stg O °C TJ Max. operating junction- te mperature 150 1. Limited only by maximum tempera)ture allowed s 2. Pulse width limited by safe o(perating area t c 3. I ≤ 25 A, di/dt ≤ 600 A/µs, V = 80% V SD u DD (BR)DSS d o Table 3. Thermal data r P Sym bol Parameter TO-220 I²PAK TO-247 D²PAK TO-220FP Unit e t Thermal resistance e Rthj-case 0.66 3.1 °C/W l junction-case max o s Thermal resistance b Rthj-amb 62.5 50 -- 62.5 °C/W junction-ambient max O Thermal resistance Rthj-pcb -- -- -- 30 -- °C/W junction-pcb max Maximum lead temperature T 300 °C l for soldering purpose Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not- I 12 A AR repetitive (pulse width limited by T max) J Single pulse avalanche energy E 900 mJ AS (starting T = 25 °C, I = I , V = 50 V) J D AR DD 3/18

Electrical characteristics STx30NM60ND 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Value Symbol Parameter Test conditions Unit Min. Typ. Max. Drain-source V I = 1 mA, V = 0 600 V (BR)DSS breakdown voltage D GS ) s dv/dt(1) Drain source voltage slope VVGDDS== 1408 0V V, ID= 25 A, 48 ct( V/ns u Zero gate voltage V = Max rating 1 µA I DS d DSS drain current (V = 0) V = Max rating @125 °C o 100 µA GS DS r Gate-body leakage P I V = ± 20 V 100 nA GSS current (VDS = 0) GS e t V Gate threshold voltage V = V , I = 2e50 µA 3 4 5 V GS(th) DS GS D l o Static drain-source on R V = 10s V, I = 12.5 A 0.11 0.13 Ω DS(on) resistance GS b D O 1. Characteristic value at turn off on inductive load - ) Table 6. Dynamic s ( t Symbol Paracmeter Test conditions Min. Typ. Max. Unit u g (1) Forwardd transconductance V = 15 V I = 12.5 A 25 S fs DS , D o rInput capacitance pF C P 2800 C iss Output capacitance VDS = 50 V, f = 1 MHz, 200 pF t eCoss Reverse transfer VGS = 0 24 pF e rss capacitance l o Equivalent output s C (2) V = 0, V = 0 to 480 V 125 pF b oss eq. capacitance GS DS O t Turn-on delay time V =300 V, I = 12.5 A 20 ns d(on) DD D t Rise time R =4.7 Ω, V = 10 V 50 ns r G GS td(off) Turn-off delay time (see Figure 23), 110 ns t Fall time (see Figure 18) 75 ns f Q Total gate charge V = 480 V, I = 25 A, 100 nC g DD D Q Gate-source charge V = 10 V, 16 nC gs GS Q Gate-drain charge (see Figure 19) 54 nC gd f=1MHz Gate DC Bias=0 R Gate input resistance Test signal level=20 mV 3.0 Ω g Open drain 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. C . is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq oss DS increases from 0 to 80% V DSS 4/18

STx30NM60ND Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 25 A SD I (1) Source-drain current (pulsed) 100 A SDM V (2) Forward on voltage I = 25 A, V = 0 1.6 V SD SD GS trr Reverse recovery time ISD = 25 A, VDD = 60 V 170 ns Q Reverse recovery charge di/dt=100 A/µs 1.2 µC rr I Reverse recovery current (see Figure 20) 15 A RRM I = 25 A,V = 60 V trr Reverse recovery time dSi/Ddt=100 A/µDsD, 250 s )ns Q Reverse recovery charge 2.5 µC rr T = 150 °C ( J t I Reverse recovery current 20 c A RRM (see Figure 20) u d 1. Pulse width limited by safe operating area o 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 5/18

Electrical characteristics STx30NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK D²PAK / I²PAK ) s ( t c u d o r P e Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP t e l o s b O - ) s ( t c u d o r P e t e l o s Fbigure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 O 6/18

STx30NM60ND Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID(A) AM00051v1 ID(A) AM00052v1 VGS=10V 30 5 25 4 5V 20 3 15 2 10 ) s 1 ( 5 t c 4V u 0 0 d 0 5 10 15 20 25 30 VSD(V) 0 2 4 o 6 8 VGS(V) r Figure 10. Transconductance Figure 11. Static draPin-source on resistance e t Gfs(S) AM00048v1 RDS(on) e AM00046v1 (Ω) l o 30.5 0.13s5 TJ=-50°C 25°C b 25.5 O 0.115 150°C - 20.5 0.095 ) s 15.5 ( 0.075 VGS=10V t ID=12.5A c u 10.5 0.055 d o 5.5 0.035 r P 0.5 0.015 0 5e 10 15 20 25 ID(3A0) 0 5 10 15 20 25 ID(A3)0 t e Figureo l12. Gate charge vs gate-source voltage Figure 13. Capacitance variations s b O AM00044v1 VGS(V) AM00045v1 C(pF) 12 VDD=480V ID=25A 10000 10 Ciss 8 1000 6 Coss 100 4 Crss 2 10 0 0 20 40 60 80 100 Qg(nC) 1 0.1 1 10 100 VGS(V) 7/18

Electrical characteristics STx30NM60ND Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) AM00043v1 RDS(on) AM00047v1 (norm) (norm) 1.1 2.1 ID=250µA 1.05 1.9 1 1.7 0.95 1.5 0.9 1.3 0.85 1.1 ) 0.8 0.9 s ( 0.75 0.7 t c 0.7 0.5 u -50 -25 0 25 50 75 100 125 T1J5(°0C) -50 -25 0 25 50 7d5 100 125 T1J5(°0C) o r Figure 16. Source-drain diode forward Figure 17. NormalizedP B vs temperature VDSS characteristics e t VSD(V) AM00050v1 BVDSS e AM00049v1 (norm) l o 1 TJ=-50°C 25°C 1.07s b 1.05 O 150°C 0.8 - 1.03 0.6 s ) 1.01 ( t 0.4 c 0.99 u d 0.97 0.2 o r 0.95 P 0 0.93 0 t e 10 20 ISD(A) -50 -25 0 25 50 75 100 125 T1J(5°0C) e l o s b O 8/18

STx30NM60ND Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load ) s ( t c u d o r P e Figure 20. Test circuit for inductive load Figure 21. Untclamped Inductive load test e switching and diode recovery times lcircuit o s b O - ) s ( t c u d o r P e t e l o Figusre 22. Unclamped inductive waveform Figure 23. Switching time waveform b O 9/18

Package mechanical data STx30NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 10/18

STx30NM60ND Package mechanical data TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.)62 s D1 1.27 0.050 ( E 10 10.40 0.393 t 0.409 c e 2.40 2.70 0.094 u 0.106 e1 4.95 5.15 0.194 d 0.202 F 1.23 1.32 0.048 o 0.051 H1 6.20 6.60 0.244r 0.256 P J1 2.40 2.72 0.094 0.107 L 13 14 e 0.511 0.551 t L1 3.50 3.93e 0.137 0.154 L20 16.40 l 0.645 o L30 28.90 s 1.137 ∅P 3.75 b 3.85 0.147 0.151 Q 2.65 O 2.95 0.104 0.116 - ) s ( t c u d o r P e t e l o s b O 11/18

Package mechanical data STx30NM60ND TO-220FP mechanical da ta mm. inch DIM. Min. Typ. Max. Min. Typ. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.03)9 s F1 1.15 1.7 0.045 (0.067 t F2 1.15 1.7 0.045 c 0.067 u G 4.95 5.2 0.195 0.204 d G1 2.4 2.7 0.094 o 0.106 H 10 10.4 0.393 r 0.409 P L2 16 0.630 L3 28.6 30.6 1.e126 1.204 t L4 9.8 10.6 e .0385 0.417 l L5 2.9 3.6 o 0.114 0.141 L6 15.9 16s.4 0.626 0.645 b L7 9 9.3 0.354 0.366 O Ø 3 3.2 0.118 0.126 - ) s ( ct E u A d D o r B P L3 e t L6 e l L7 o 1 s F F b O 1 G H G 2 F 1 2 3 L5 L2 L4 12/18

STx30NM60ND Package mechanical data TO-262(I2PAK)mechanical data mm. inch DIM. Min. Typ. Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027) s c2 1.23 1.32 0.048 (0.052 t c D 8.95 9.35 0.352 0.368 u e 2.40 2.70 0.094 d 0.106 o e1 4.95 5.15 0.194 0.202 r P E 10 10.40 0.393 0.410 e L 13 14 0.511 0.551 t e L1 3.50 3.93 0.137 0.154 l o L2 1.27 1.4s0 0.050 0.055 b O - ) s ( t c u d o r P e t e l o s b O 13/18

Package mechanical data STx30NM60ND D²PAK (TO-263) mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.0)53 s D 8.95 9.35 0.352 0.368 ( D1 7.50 0.295 ct E 10 10.40 0.394 u 0.409 E1 8.50 0.334 d e 2.54 o 0.1 r e1 4.88 5.28 0.192P 0.208 H 15 15.85 0 .590 0.624 e J1 2.49 2.69 0.099 0.106 t L 2.29 2.79 e 0.090 0.110 l L1 1.27 1.o40 0.05 0.055 L2 1.30 s1.75 0.051 0.069 b R 0.4 0.016 O V2 0° 8° 0° 8° - ) s ( t c u d o r P e t e l o s b O 0079457_M 14/18

STx30NM60ND Package mechanical data TO-247 Mechanical data mm. Dim. Min. Typ Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 ) s b2 3.0 3.40( t c 0.40 0.c80 u D 19.85 d 20.15 o E 15.45 15.75 r P e 5.45 e L 14.20 14.80 t e L1 3.70 4.30 l o L2 s 18.50 b øP 3.55 3.65 O øR 4.50 5.50 - S 5.50 ) s ( t c u d o r P e t e l o s b O 15/18

Packing mechanical data STx30NM60ND 5 Packing mechanical data D2PAK FOOTPRINT ) s ( t c u d o r P TAPE AND REEL SHIPMENT e ReEtEL MECHANICAL DATA l o mm inch DIM. s MIN. MAX. MIN. MAX. b A 330 12.992 O B 1.5 0.059 - C 12.8 13.2 0.504 0.520 s ) D 20.2 0795 ( G 24.4 26.4 0.960 1.039 t c N 100 3.937 u T 30.4 1.197 d o BASE QTY BULK QTY TAPE MErCHANICAL DATA P 1000 1000 mm inch DIM.e MIN. MAX. MIN. MAX. t e A0 10.5 10.7 0.413 0.421 l o B0 15.7 15.9 0.618 0.626 s D 1.5 1.6 0.059 0.063 b D1 1.59 1.61 0.062 0.063 O E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 16/18

STx30NM60ND Revision history 6 Revision history T able 8. Document revision history Date Revision Changes 29-Nov-2007 1 initial release 11-Nov-2008 2 Document status promoted from preliminary data to datasheet. ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 17/18

STx30NM60ND ) s Please Read Carefully: ( t c u Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subdsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and soervices described herein at any time, without notice. r P All ST products are sold pursuant to ST’s terms and conditions of sale. e Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no t liability whatsoever relating to the choice, selection or use of the ST products and servicees described herein. l No license, express or implied, by estoppel or otherwise, to any intellectual propertoy rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed sa license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered asb a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained tOherein. - UNLESS OTHERWISE SET FORTH IN ST’S TERMS )AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED s WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED ( WARRANTIES OF MERCHANTABILITY, FITNEtSS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS c OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. u UNLESS EXPRESSLY APPROVED dIN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OoR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PROrDUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, P DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLYe BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. t e l Resale of oST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any wsarranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liabbility of ST. O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18