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STB30NF20产品简介:
ICGOO电子元器件商城为您提供STB30NF20由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB30NF20价格参考。STMicroelectronicsSTB30NF20封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 200V 30A(Tc) 125W(Tc) D2PAK。您可以下载STB30NF20参考资料、Datasheet数据手册功能说明书,资料中有STB30NF20 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 200V 30A D2PAKMOSFET N Ch 1500V 2.5A Pwr MOSFET |
产品分类 | FET - 单分离式半导体 |
FET功能 | 逻辑电平门 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 30 A |
Id-连续漏极电流 | 30 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STB30NF20STripFET™ |
数据手册 | |
产品型号 | STB30NF20 |
Pd-PowerDissipation | 125 W |
Pd-功率耗散 | 125 W |
RdsOn-Drain-SourceResistance | 75 mOhms |
RdsOn-漏源导通电阻 | 75 mOhms |
Vds-Drain-SourceBreakdownVoltage | 200 V |
Vds-漏源极击穿电压 | 200 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
Vgs-栅源极击穿电压 | 20 V |
上升时间 | 15.7 ns |
下降时间 | 8.8 ns |
不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
不同Vds时的输入电容(Ciss) | 1597pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 38nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 75 毫欧 @ 15A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | D2PAK |
其它名称 | 497-7946-2 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1166/PF201845?referrer=70071840 |
典型关闭延迟时间 | 38 ns |
功率-最大值 | 125W |
包装 | 带卷 (TR) |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
封装/箱体 | D2PAK-2 |
工厂包装数量 | 1000 |
晶体管极性 | N-Channel |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
标准包装 | 1,000 |
漏源极电压(Vdss) | 200V |
电流-连续漏极(Id)(25°C时) | 30A (Tc) |
系列 | STB30NF20 |
通道模式 | Enhancement |
配置 | Single |
STP30NF20 - STB30NF20 STW30NF20 Ω 2 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D PAK Low gate charge STripFET™ Power MOSFET Features Type V R I P DSS DS(on) D TOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A 125W 2 3 1 23 1 ■ Gate charge minimized TO-247 3 TO-220 1 ■ 100% avalanche tested D²PAK ■ Excellent figure of merit (R *Q ) DS g ■ Very good manufactuing repeability ■ Very low intrinsic capacitances Application Figure 1. Internal schematic diagram ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters. Table 1. Device summary Order codes Marking Package Packaging STP30NF20 30NF20 TO-220 Tube STW30NF20 30NF20 TO-247 Tube STB30NF20 30NF20 D²PAK Tape & reel October 2007 Rev 2 1/16 www.st.com 16
Contents STP30NF20 - STW30NF20 - STB30NF20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16
STP30NF20 - STW30NF20 - STB30NF20 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 200 V DS GS V Gate-source voltage ±20 V GS I Drain current (continuous) at T = 25°C 30 A D C I Drain current (continuous) at T =100°C 19 A D C I (1) Drain current (pulsed) 120 A DM P Total dissipation at T = 25°C 125 W TOT C Derating factor 1 W/°C dv/dt(2) Peak diode recovery voltage slope 10 V/ns TJ Operating junction temperature -55 to 150 °C T Storage temperature stg Maximum lead temperature for soldering T 300 °C l purpose 1. Pulse width limited by safe operating area 2. I ≤ 30A, di/dt ≤ 200A/µs, V = 80%V SD DD (BR)DSS Table 3. Thermal data TO-220/ Symbol Parameter TO-247 Unit D²PAK R Thermal resistance junction-case max 1 °C/W thJC R Thermal resistance junction-ambient max 62.5 50 °C/W thJA Table 4. Avalanche data Symbol Parameter Value Unit Avalanche current, repetitive or not I 30 A AR repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting E 140 mJ AS Tj=25°C, I =I , V =50V) D AR DD 3/16
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage ID = 1mA, VGS= 0 200 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating,Tc=125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±20V ±100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V Static drain-source on RDS(on) resistance VGS= 10V, ID= 15A 0.065 0.075 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS =15V, ID = 15A 20 S Input capacitance Ciss 1597 pF Output capacitance Coss VDS =25V, f=1 MHz, VGS=0 320 pF Reverse transfer C 43 pF rss capacitance Qg Total gate charge VDD=160V, ID = 30A 38 nC Qgs Gate-source charge VGS =10V 8 nC Qgd Gate-drain charge (see Figure 17) 18 nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/16
STP30NF20 - STW30NF20 - STB30NF20 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V =100V, I =15A, td(on) Turn-on delay time RDD=4.7Ω, VD =10V 35 ns t Rise time G GS 15.7 ns r (see Figure 16) V =100V, I =15A, td(off) Turn-off delay time RDD=4.7Ω, VD =10V 38 ns t Fall time G GS 8.8 ns f (see Figure 16) Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 30 A Source-drain current I (1) 120 A SDM (pulsed) VSD(2) Forward on voltage ISD=30A, VGS=0 1.5 V trr Reverse recovery time 155 ns I =30A, di/dt = 100A/µs, Qrr Reverse recovery charge VSD =100 V, Tj=25°C 0.96 µC DD I Reverse recovery current 12.4 A RRM trr Reverse recovery time 194 ns I =30A, di/dt = 100A/µs, Qrr Reverse recovery charge VSD =100 V, Tj=150°C 1.42 µC DD I Reverse recovery current 14.6 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-247 Figure 3. Thermal impedance for TO-247 Figure 4. Safe operating area for TO-220/ Figure 5. Thermal impedance for TO-220/ D²PAK D²PAK Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16
STP30NF20 - STW30NF20 - STB30NF20 Electrical characteristics Figure 8. Normalized B vs temperature Figure 9. Static drain-source on resistance VDSS Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs vs temperature temperature 7/16
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20 Figure 14. Source-drain diode forward Figure 15. Maximum avalanche energy vs characteristics temperature 8/16
STP30NF20 - STW30NF20 - STB30NF20 Test circuit 3 Test circuit Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16
Package mechanical data STP30NF20 - STW30NF20 - STB30NF20 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16
STP30NF20 - STW30NF20 - STB30NF20 Package mechanical data TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 11/16
Package mechanical data STP30NF20 - STW30NF20 - STB30NF20 TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 12/16
STP30NF20 - STW30NF20 - STB30NF20 Package mechanical data D²PAK mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.50 0.55 L3 1.4 1.75 0.055 0.68 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 4° 13/16
Packaging mechanical data STP30NF20 - STW30NF20 - STB30NF20 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 14/16
STP30NF20 - STW30NF20 - STB30NF20 Revision history 6 Revision history T able 9. Document revision history Date Revision Changes 25-Jan-2007 1 First Release 18-Oct-2007 2 Added D²PAK 15/16
STP30NF20 - STW30NF20 - STB30NF20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16
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