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  • 型号: STB30NF10T4
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STB30NF10T4产品简介:

ICGOO电子元器件商城为您提供STB30NF10T4由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB30NF10T4价格参考。STMicroelectronicsSTB30NF10T4封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 100V 35A(Tc) 115W(Tc) D2PAK。您可以下载STB30NF10T4参考资料、Datasheet数据手册功能说明书,资料中有STB30NF10T4 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 100V 35A D2PAKMOSFET N-Ch 100 Volt 35 Amp

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

35 A

Id-连续漏极电流

35 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STB30NF10T4STripFET™ II

数据手册

点击此处下载产品Datasheet

产品型号

STB30NF10T4

Pd-PowerDissipation

115 W

Pd-功率耗散

115 W

RdsOn-Drain-SourceResistance

38 mOhms

RdsOn-漏源导通电阻

38 mOhms

Vds-Drain-SourceBreakdownVoltage

100 V

Vds-漏源极击穿电压

100 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

40 ns

下降时间

10 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

1180pF @ 25V

不同Vgs时的栅极电荷(Qg)

55nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

45 毫欧 @ 15A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

D2PAK

其它名称

497-6550-6

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF67124?referrer=70071840

典型关闭延迟时间

45 ns

功率-最大值

115W

包装

Digi-Reel®

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2PAK-2

工厂包装数量

1000

晶体管极性

N-Channel

最大工作温度

+ 175 C

最小工作温度

- 55 C

标准包装

1

正向跨导-最小值

10 S

漏源极电压(Vdss)

100V

电流-连续漏极(Id)(25°C时)

35A (Tc)

系列

STB30NF10

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB30NF10 STP30NF10 - STP30NF10FP Ω 2 N-channel 100V - 0.038 - 35A - D PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STB30NF10 100V <0.045Ω 35A 3 STP30NF10 100V <0.045Ω 35A 1 3 2 STP30NF10FP 100V <0.045Ω 35A 1 D2PAK TO-220 ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 ■ Application oriented characterization 2 1 TO-220FP Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" Internal schematic diagram strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Sales type Marking Package Packaging STB30NF10T4 B30NF10 D2PAK Tape & reel STP30NF10 P30NF10 TO-220 Tube STP30NF10FP P30NF10FP TO-220FP Tube June 2006 Rev 2 1/16 www.st.com 16

Contents STB30NF10 - STP30NF10 - STP30NF10FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16

STB30NF10 - STP30NF10 - STP30NF10FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit D2PAK TO-220FP TO-220 V Drain-source voltage (V = 0) 100 V DS GS V Drain-gate voltage (R = 20 kΩ) 100 V DGR GS V Gate- source voltage ± 20 V GS I Drain current (continuous) at T = 25°C 35 18 A D C I Drain current (continuous) at T = 100°C 25 13 A D C I (1) Drain current (pulsed) 140 72 A DM P Total dissipation at T = 25°C 115 30 W tot C Derating Factor 0.77 0.2 W/°C dv/dt (2) Peak diode recovery voltage slope 28 V/ns E (3) Single pulse avalanche energy 275 mJ AS V Insulation withstand voltage (DC) -- 2500 V ISO T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Pulse width limited by safe operating area. 2. I ≤30A, di/dt ≤400A/µs, V ≤ V , Tj ≤ T SD DD (BR)DSS JMAX 3. Starting T = 25 °C, I = 15A, V = 30V j D DD Table 2. Thermal data D2PAK TO-220FP TO-220 Rthj-case Thermal resistance junction-case max 1.30 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W T Maximum lead temperature for soldering purpose 300 °C J 3/16

Electrical characteristics STB30NF10 - STP30NF10 - STP30NF10FP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250µA, V =0 100 V (BR)DSS breakdown voltage D GS V = max ratings Zero gate voltage DS 1 µA I V = max ratings, DSS drain current (V = 0) DS 10 µA GS T = 125°C C Gate-body leakage I V = ± 20V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 2 3 4 V GS(th) DS GS D Static drain-source on R V = 10V, I = 15A 0.038 0.045 Ω DS(on) resistance GS D Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15V, I =15A 10 S fs transconductance DS D Input capacitance C 1180 pF Ciss Output capacitance VDS = 25V, f = 1MHz, 180 pF Coss Reverse transfer VGS = 0 80 pF rss capacitance t Turn-on delay time 15 ns d(on) V = 50V, I = 15A t Rise time DD D 40 ns r R =4.7Ω V = 10V t Turn-off delay time G GS 45 ns d(off) (see Figure15) t Fall time 10 ns f Q Total gate charge V = 80V, I = 12A, 40 55 nC g DD D Q Gate-source charge V = 10V 8 nC gs GS Q Gate-drain charge (see Figure16) 15 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/16

STB30NF10 - STP30NF10 - STP30NF10FP Electrical characteristics Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 35 A SD Source-drain current I (1) 140 A SDM (pulsed) V (2) Forward on voltage I = 30A, V = 0 1.3 V SD SD GS I = 30A, t Reverse recovery time SD 110 ns rr di/dt = 100A/µs, Q Reverse recovery charge 390 nC rr V = 55V, T = 150°C I Reverse recovery current DD j 7.5 A RRM (see Figure17) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/16

Electrical characteristics STB30NF10 - STP30NF10 - STP30NF10FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO- Figure 2. Thermal impedance for TO- 220/D2PAK 220/D2PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16

STB30NF10 - STP30NF10 - STP30NF10FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs vs temperature temperature 7/16

Electrical characteristics STB30NF10 - STP30NF10 - STP30NF10FP Figure 13. Source-drain diode forward Figure 14. Normalized B vs temperature VDSS characteristics 8/16

STB30NF10 - STP30NF10 - STP30NF10FP Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16

Package mechanical data STB30NF10 - STP30NF10 - STP30NF10FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16

STB30NF10 - STP30NF10 - STP30NF10FP Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 11/16

Package mechanical data STB30NF10 - STP30NF10 - STP30NF10FP TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 12/16

STB30NF10 - STP30NF10 - STP30NF10FP Package mechanical data TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 13/16

Packaging mechanical data STB30NF10 - STP30NF10 - STP30NF10FP 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 14/16

STB30NF10 - STP30NF10 - STP30NF10FP Revision history 6 Revision history T able 6. Revision history Date Revision Changes 21-Jun-2004 1 First version 26-Jun-2006 2 New template, no content change 15/16

STB30NF10 - STP30NF10 - STP30NF10FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16

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