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  • 型号: STB23NM60ND
  • 制造商: STMicroelectronics
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STB23NM60ND产品简介:

ICGOO电子元器件商城为您提供STB23NM60ND由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB23NM60ND价格参考。STMicroelectronicsSTB23NM60ND封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 600V 19.5A(Tc) 150W(Tc) D2PAK。您可以下载STB23NM60ND参考资料、Datasheet数据手册功能说明书,资料中有STB23NM60ND 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 600V 19.5A D2PAKMOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

19.5 A

Id-连续漏极电流

19.5 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STB23NM60NDFDmesh™ II

数据手册

点击此处下载产品Datasheet

产品型号

STB23NM60ND

Pd-PowerDissipation

150 W

Pd-功率耗散

150 W

RdsOn-Drain-SourceResistance

180 mOhms

RdsOn-漏源导通电阻

180 mOhms

Vds-Drain-SourceBreakdownVoltage

600 V

Vds-漏源极击穿电压

600 V

Vgs-Gate-SourceBreakdownVoltage

+/- 25 V

Vgs-栅源极击穿电压

25 V

上升时间

45 ns

下降时间

40 ns

不同Id时的Vgs(th)(最大值)

5V @ 250µA

不同Vds时的输入电容(Ciss)

2050pF @ 50V

不同Vgs时的栅极电荷(Qg)

70nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

180 毫欧 @ 10A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

D2PAK

其它名称

497-8472-6

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF206904?referrer=70071840

典型关闭延迟时间

90 ns

功率-最大值

150W

包装

Digi-Reel®

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2PAK-2

工厂包装数量

1000

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

漏源极电压(Vdss)

600V

电流-连续漏极(Id)(25°C时)

19.5A (Tc)

系列

STB23NM60ND

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh™ II Power MOSFET (with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features TAB V @ R Order codes DSS DS(on) I T max D 3 Jmax 1 3 2 1 STB23NM60ND D²PAK TO-220FP STF23NM60ND 650 V < 0.180 Ω 19.5 A TAB STP23NM60ND STW23NM60ND ■ The worldwide best RDS(on) * area amongst the 123 1 23 fast recovery diode devices TO-220 TO-247 ■ 100% avalanche tested ■ Low input capacitance and gate charge Figure 1. Internal schematic diagram ■ Low gate input resistance (cid:36)(cid:8)(cid:18)(cid:12)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) ■ High dv/dt and avalanche capabilities Applications ■ Switching applications (cid:39)(cid:8)(cid:17)(cid:9) Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Oreder codes Marking Package Packaging STB23NM60ND 23NM60ND D²PAK Tape and reel STF23NM60ND 23NM60ND TO-220FP STP23NM60ND 23NM60ND TO-220 Tube STW23NM60ND 23NM60ND TO-247 December 2012 Doc ID 14367 Rev 4 1/22 This is information on a product in full production. www.st.com 22

Contents STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK, TO-220, TO-220FP TO-247 V Drain-source voltage 600 V DS V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 19.5 19.5 (1) A D C I Drain current (continuous) at T = 100 °C 11.7 11.7 (1) A D C I (2) Drain current (pulsed) 78 78 (1) A DM P Total dissipation at T = 25 °C 150 35 W TOT C Avalanche current, repetitive or not-repetitive I 9 A AS (pulse width limited by Tj max) Single pulse avalanche energy E 700 mJ AS (starting T= 25 °C, I = I , V = 50 V) j D AS DD dv/dt (3) Peak diode recovery voltage slope 40 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t = 1 s; T = 25 °C) C T Storage temperature -55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. I ≤ 19.5 A, di/dt ≤ 600 A/µs, V =80% V V < V SD DD (BR)DSS, DS(peak) (BR)DSS Table 3. Thermal data Symbol Parameter D²PAK TO-220FP TO-220 TO-247 Unit R Thermal resistance junction-case max 0.83 3.6 0.83 °C/W thj-case R Thermal resistance junction-amb max 62.5 50 °C/W thj-amb R Thermal resistance junction-pcb max(1) 30 °C/W thj-pcb 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Doc ID 14367 Rev 4 3/22

Electrical characteristics STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA, V = 0 600 V (BR)DSS voltage D GS V = 480 V, I = 19.5 A, dv/dt(1) Drain-source voltage slope DD D 30 V/ns V = 10 V GS I Zero gate voltage drain VDS = 600 V, 1 µA DSS current (VGS = 0) VDS = 600 V, Tc=125 °C 100 µA Gate body leakage current I V = ±20 V ±100 nA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 10 A 0.150 0.180 Ω DS(on) resistance GS D 1. Characteristic value at turn off on inductive load Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 2100 pF Ciss Output capacitance VDS = 50 V, f =1 MHz, - 80 - pF Coss Reverse transfer VGS = 0 10 pF rss capacitance Equivalent output C (1) V = 0, V = 0 to 480 V - 310 - pF oss eq. capacitance GS DS f=1 MHz Gate DC Bias=0 Rg Gate input resistance Test signal level=20 mV - 4 - Ω open drain Q Total gate charge V = 480 V, I = 19.5 A 69 nC g DD D Q Gate-source charge V = 10 V - 13 - nC gs GS Q Gate-drain charge (see Figure 18) 35 nC gd 1. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS 4/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 21 ns d(on) V = 300 V, I = 10 A, t Rise time DD D 19 ns r R = 4.7 Ω, V = 10 V - - t Turn-off delay time G GS 92 ns d(off) (see Figure 17) t Fall time 42 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 19.5 A SD - I (1) Source-drain current (pulsed) 78 A SDM V (2) Forward on voltage I = 19.5 A, V =0 - 1.3 V SD SD GS trr Reverse recovery time ISD = 19.5 A, di/dt =100 190 ns Qrr Reverse recovery charge A/µs, VDD = 60 V - 1.2 µC I Reverse recovery current (see Figure 19) 13 A RRM V = 60 V t Reverse recovery time DD 270 ns rr di/dt =100 A/µs, I = 19.5 Q Reverse recovery charge SD - 2.0 µC rr A T = 150 °C j I Reverse recovery current 15 A RRM (see Figure 19) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 14367 Rev 4 5/22

Electrical characteristics STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and Figure 3. Thermal impedance for D2PAK and TO-220 TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM14794v1 AM14795v1 ID ID (A) (A) VGS=10V VDS= 20 V 50 50 7V 40 40 6V 30 30 20 20 5V 10 10 0 0 0 5 10 15 20 25 30VDS(V) 0 2 4 6 8 VGS(V) Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage VGS AM01537v1 (V) VDD=480V 12 ID=19.5A 10 8 6 4 2 0 0 20 40 60 80 Qg(nC) Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage vs temperature C AM01538v1 (pF) 10000 Ciss 1000 100 Coss 10 Crss 1 0.1 1 10 100 VDS(V) Doc ID 14367 Rev 4 7/22

Electrical characteristics STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Figure 14. Normalized on resistance vs Figure 15. Source-drain diode forward temperature characteristics Figure 16. Normalized B vs temperature VDSS VDS AM09028v1 (norm) ID=1mA 1.10 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -50 -25 0 25 50 75 100 TJ(°C) 8/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Test circuits 3 Test circuits Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 14367 Rev 4 9/22

Package mechanical data STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Package mechanical data Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Doc ID 14367 Rev 4 11/22

Package mechanical data STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters 12/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 14367 Rev 4 13/22

Package mechanical data STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Figure 25. TO-220FP drawing 7012510_Rev_K_B 14/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Package mechanical data Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Doc ID 14367 Rev 4 15/22

Package mechanical data STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S 16/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Package mechanical data Table 11. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 Doc ID 14367 Rev 4 17/22

Package mechanical data STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Figure 27. TO-247 drawing 0075325_G 18/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Packaging mechanical data 5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 14367 Rev 4 19/22

Packaging mechanical data STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Figure 28. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 29. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 20/22 Doc ID 14367 Rev 4

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Revision history 6 Revision history T able 13. Document revision history Date Revision Changes 22-Jan-2008 1 First release 11-Dec-2008 2 Document status promoted from preliminary data to datasheet. 06-Oct-2010 3 Corrected unit in Table4: On/off states – Minor text changes in cover page – The part number STI23NM60ND has been moved to a separate datasheet – Modified: Note1 and Note3 in Table2 18-Dec-2012 4 – Added R in Table3 and Note1 thj-pcb – Modified: typ values in Table5 and 6 – Modified: Figure8, 9, 11 and 16 – Updated: Section4: Package mechanical data and Section5: Packaging mechanical data Doc ID 14367 Rev 4 21/22

STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 22/22 Doc ID 14367 Rev 4

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STW23NM60ND STB23NM60ND STP23NM60ND STF23NM60ND