STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 Ω N-channel 650 V, 0.150 , 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247 Features V @ R Order codes DSS DS(on) I P T max D W Jmax 3 STB21N65M5 17 A 125 W 123 12 STF21N65M5 17 A(1) 30 W TO-220 I²PAK STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 3 2 1. Limited only by maximum temperature allowed 1 3 1 23 1 D²PAK TO-247 ■ Worldwide best R * area TO-220FP DS(on) ■ Higher V rating DSS ■ High dv/dt capability ■ Excellent switching performance Figure 1. Internal schematic diagram ■ 100% avalanche tested (cid:36)(cid:8)(cid:18)(cid:9) Application Switching applications Description (cid:39)(cid:8)(cid:17)(cid:9) These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is (cid:51)(cid:8)(cid:19)(cid:9) combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB21N65M5 D²PAK Tape and reel STF21N65M5 TO-220FP Tube STI21N65M5 21N65M5 I²PAK Tube STP21N65M5 TO-220 Tube STW21N65M5 TO-247 Tube May 2011 Doc ID 15427 Rev 4 1/22 www.st.com 22

Contents STB/F/I/P/W21N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, I²PAK, TO-220FP D²PAK, TO-247 V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 17 17 (1) A D C I Drain current (continuous) at T = 100 °C 10.7 10.7 (1) A D C I (2) Drain current (pulsed) 68 68(1) A DM P Total dissipation at T = 25 °C 125 30 W TOT C Avalanche current, repetitive or not- I 5 A AR repetitive (pulse width limited by T max) j Single pulse avalanche energy E 400 mJ AS (starting T = 25 °C, I = I , V = 50 V) j D AR DD dv/dt (3) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature - 55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. I ≤ 17 A, di/dt ≤ 400 A/µs; V < V , V = 400 V. SD Peak (BR)DSS DD T able 3. Thermal data Value Symbol Parameter Unit D²PAK I²PAK TO-220 TO-247 TO-220FP Thermal resistance junction-case R 1 4.17 °C/W thj-case max Thermal resistance junction- R 62.5 50 62.5 °C/W thj-amb ambient max Thermal resistance junction-pcb R 30 °C/W thj-pcb max Maximum lead temperature for T 300 °C l soldering purpose Doc ID 15427 Rev 4 3/22

Electrical characteristics STB/F/I/P/W21N65M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 650 V (BR)DSS breakdown voltage D GS Zero gate voltage V = Max rating 1 µA I DS DSS drain current (V = 0) V = Max rating, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 8.5 A 0.150 0.179 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1950 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 46 - pF Coss Reverse transfer VGS = 0 3 pF rss capacitance Equivalent C (1) capacitance time - 133 - pF o(tr) related V = 0 to 520 V, V = 0 DS GS Equivalent C (2) capacitance energy - 44 - pF o(er) related Intrinsic gate R f = 1 MHz open drain - 2.5 - Ω G resistance Q Total gate charge V = 520 V, I = 8.5 A, 50 nC g DD D Q Gate-source charge V = 10 V - 13 - nC gs GS Q Gate-drain charge (see Figure20) 23 nC gd 1. C time related is defined as a constant equivalent capacitance giving the same charging time as C oss eq. oss when V increases from 0 to 80% V DS DSS. 2. C energy related is defined as a constant equivalent capacitance giving the same stored energy as oss eq. C when V increases from 0 to 80% V oss DS DSS. 4/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td (v) Voltage delay time VDD = 400 V, ID = 11 A, 37 ns tr (v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 10 - ns tf (i) Current fall time (see Figure21) 12 ns t (off) Crossing time (see Figure24) 24 ns c Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 17 A SD - I (1) Source-drain current (pulsed) 68 A SDM V (2) Forward on voltage I = 17 A, V = 0 - 1.5 V SD SD GS t Reverse recovery time 294 ns rr I = 17 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 4 µC rr V = 100 V (see Figure21) I Reverse recovery current DD 28 A RRM t Reverse recovery time I = 17 A, di/dt = 100 A/µs 340 ns rr SD Q Reverse recovery charge V = 100 V, T = 150 °C - 5 µC rr DD j I Reverse recovery current (see Figure21) 29 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15427 Rev 4 5/22

Electrical characteristics STB/F/I/P/W21N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, D²PAK, I²PAK D²PAK, I²PAK ID AM05490v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11100µ0µsµss Li 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID AM05491v1 (A) 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100µ0µsµss Li 1 1ms 10ms Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM05492v1 (A) 1µs 101 Operatimiotne id n btyh ism aarx eRa iDsS(on) 11000µµss Li 1ms Tj=150°C 0.1 10ms Tc=25°C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) 6/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID AM05493v1 ID AM05494v1 (A) (A) 35 VGS=10V 35 VDS=15V 30 30 7V 25 25 20 20 15 15 10 10 6V 5 5 5V 0 0 0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance VGS AM05496v1 RDS(on) AM05495v1 (V) (Ω) 12 VDS VDD=520V VGS 480 0.17 VGS= 10 V ID=8.5A 10 400 0.16 0.15 8 320 0.14 6 240 0.13 4 160 0.12 2 80 0.11 0 0 0.10 0 20 40 60 Qg(nC) 0 2 4 6 8 10 12 14 16 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM05497v1 Eoss(µJ) AM05498v1 (pF) 9 10000 8 7 Ciss 1000 6 5 100 4 Coss 3 10 2 Crss 1 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Doc ID 15427 Rev 4 7/22

Electrical characteristics STB/F/I/P/W21N65M5 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) AM05500v1 RDS(on) AM05501v1 (norm) (norm) 1.10 2.1 ID =250 µA ID= 8.5 A 1.9 VGS= 10 V 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C) Figure 16. Source-drain diode forward Figure 17. Normalized B vs temperature VDSS characteristics VSD AM05502v1 BVDSS AM05499v1 (V) (norm) TJ=-50°C 1.0 1.07 ID= 1 mA 1.05 0.9 1.03 0.8 TJ=25°C 1.01 0.7 TJ=150°C 0.99 0.6 0.97 0.5 0.95 0.4 0.93 0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) Figure 18. Switching losses vs gate resistance (1) E AM05541v1 (µJ) ID=11A Eon 160 VDD=400V 140 VGS=10V 120 100 Eoff 80 60 40 20 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. 8/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay--ooffff IDM Vgs 90%Vgs oonn ID Vgs(I(t)))) VDD VDD 10%Vds 10%Id Vds TTrriissee TTffaallll AM01472v1 Tcross--over AM05540v2 Doc ID 15427 Rev 4 9/22

Package mechanical data STB/F/I/P/W21N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Package mechanical data T able 8. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 F igure 25. TO-220FP drawing mechanical data L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_K Doc ID 15427 Rev 4 11/22

Package mechanical data STB/F/I/P/W21N65M5 T able 9. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H 12/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Package mechanical data Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Doc ID 15427 Rev 4 13/22

Package mechanical data STB/F/I/P/W21N65M5 Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S 14/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Package mechanical data Table 11. TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 15427 Rev 4 15/22

Package mechanical data STB/F/I/P/W21N65M5 Figure 28. TO-247 drawing 0075325_F 16/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Package mechanical data Table 12. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Doc ID 15427 Rev 4 17/22

Package mechanical data STB/F/I/P/W21N65M5 Figure 29. D²PAK (TO-263) drawing 0079457_R 18/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Packaging mechanical data 5 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Figure 30. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 15427 Rev 4 19/22

Packaging mechanical data STB/F/I/P/W21N65M5 Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 20/22 Doc ID 15427 Rev 4

STB/F/I/P/W21N65M5 Revision history 6 Revision history T able 14. Document revision history Date Revision Changes 24-Feb-2009 1 First release 27-Feb-2009 2 Corrected package information on first page. 11-Nov-2009 3 Document status promoted from preliminary data to datasheet. R values have been updated (see Table4: On /off states and 11-May-2011 4 DS(on) Figure11: Static drain-source on resistance). Doc ID 15427 Rev 4 21/22

STB/F/I/P/W21N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 22/22 Doc ID 15427 Rev 4