STB18NM80, STF18NM80, STP18NM80, STW18NM80 Ω N-channel 800 V, 0.25 , 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features R Order codes V DS(on) I DSS max D 3 3 STB18NM80 800 V < 0.295 Ω 17 A 1 2 1 D²PAK STF18NM80 800 V < 0.295 Ω 17 A (1) TO-220FP STP18NM80 800 V < 0.295 Ω 17 A STW18NM80 800 V < 0.295 Ω 17 A 1. Limited only by maximum temperature allowed 3 3 ■ 100% avalanche tested 1 2 1 2 ■ Low input capacitance and gate charge TO-220 TO-247 ■ Low gate input resistance Application Figure 1. Internal schematic diagram ■ Switching applications Description (cid:36)(cid:8)(cid:18)(cid:9) These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the (cid:39)(cid:8)(cid:17)(cid:9) company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip (cid:51)(cid:8)(cid:19)(cid:9) technique, these Power MOSFETs boast an overall dynamic performance which is superior to (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) similar products on the market. Table 1. Device summary Order codes Marking Package Packaging STB18NM80 D²PAK Tape and reel STF18NM80 TO-220FP 18NM80 STP18NM80 TO-220 Tube STW18NM80 TO-247 May 2012 Doc ID 15421 Rev 5 1/21 This is information on a product in full production. www.st.com 21

Contents STB18NM80, STF18NM80, STP18NM80, STW18NM80 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 D²PAK TO-247 TO-220FP V Drain-source voltage 800 V DS V Gate-source voltage ± 30 V GS Drain current (continuous) at I 17 17 (1) A D T = 25 °C C Drain current (continuous) at I 10.71 10.71(1) A D T = 100 °C C I (2) Drain current (pulsed) 68 68 (1) A DM P Total dissipation at T = 25 °C 190 40 W TOT C Insulation withstand voltage (RMS) V from all three leads to external heat 2500 V ISO sink (t = 1 s;T = 25 °C) C T Storage temperature -65 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area T able 3. Thermal data Value Symbol Parameter Unit TO-220 D²PAK TO-247 TO-220FP R Thermal resistance junction-case 0.66 3.13 °C/W thj-case R Thermal resistance junction-amb 62.5 50 62.5 °C/W thj-amb R Thermal resistance junction-pcb 30 °C/W thj-pcb Maximum lead temperature for T 300 °C l soldering purpose Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not-repetitive I 4 A AS (pulse width limited by Tj max) Single pulse avalanche energy E 600 mJ AS (starting Tj = 25 °C, I = I , V = 50 V) D AS DD Doc ID 15421 Rev 5 3/21

Electrical characteristics STB18NM80, STF18NM80, STP18NM80, STW18NM80 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA, V = 0 800 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = 800 V, 10 µA DSS current (VGS = 0) VDS = 800 V,Tc = 125 °C 100 µA Gate body leakage current I V = ± 30 V ±100 nA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source R V = 10 V, I = 8.5 A 0.25 0.295 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V = 15 V, I = 8.5 A - 14 - S fs DS D Input capacitance C 2070 pF iss Output capacitance C V = 50 V, f = 1 MHz, V = 0 - 210 - pF oss DS GS Reverse transfer C 29 pF rss capacitance Equivalent output C (2) V = 0, V = 0 to 640 V - 316 - pF oss eq. capacitance GS DS f = 1 MHz Gate DC Bias = 0 R Gate input resistance Test Signal Level = 20 mV - 4 - Ω G Open Drain Q Total gate charge V = 640 V, I = 17 A 70 nC g DD D Q Gate-source charge V = 10 V - 13 - nC gs GS Q Gate-drain charge (see Figure17) 40 nC gd 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. C . is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq oss DS increases from 0 to 80% V DSS 4/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 8.5 A, 18 ns tr Rise time RG = 4.7 Ω, VGS = 10 V - 28 - ns td(off) Turn-off delay time (see Figure16 and 96 ns t Fall time Figure21) 50 ns f Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 17 A SD - I (1) Source-drain current (pulsed) 68 A SDM V (2) Forward on voltage I = 17 A, V = 0 - 1.6 V SD SD GS trr Reverse recovery time ISD = 17 A, di/dt = 100 618 ns Qrr Reverse recovery charge A/µs, VDD = 100 V, - 9.6 µC I Reverse recovery current (see Figure18) 31.2 A RRM I = 17 A, t Reverse recovery time SD 822 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 13 µC rr V = 100 V, Tj=150°C I Reverse recovery current DD 31.8 A RRM (see Figure18) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15421 Rev 5 5/21

Electrical characteristics STB18NM80, STF18NM80, STP18NM80, STW18NM80 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, D²PAK D²PAK ID (A) 10 Operatimiotne id n btyh is maarx eaR iDsS(on) 11100m0µsµss Li 1 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 ID (A) 10µs 10 Operatimiotne id n btyh is maarx eaR iDsS(on) 110m0sµs Li 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP ID (A) 10 Operatmiitoen di nb yt hims aax reRa DiSs(on) 11000µµss 1 Li 1ms 10ms Tj=150°C 0.1 Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) 6/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID ID (A) (A) 40 VGS=10V 40 VDS=20V 35 35 30 30 7V 25 25 20 20 15 15 10 10 6V 5 5 5V 0 0 0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Normalized B vs temperature Figure 11. Static drain-source on-resistance VDSS BVDSS RDS(on) (norm) (Ω) I =1mA D 1.06 0.28 VGS=10V 1.03 0.26 1.00 0.24 0.98 0.22 0.95 0.92 0.2 -50 -25 0 25 50 75 100 TJ(°C) 0 5 10 15 ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations VGS 700 C (V) VDD=640V VGS (pF) 12 600 100000 ID=17A VDS 10 500 10000 8 400 Ciss 1000 6 300 100 4 200 Coss Crss 2 100 10 0 0 1 0 20 40 60 80 Qg(nC) 0.1 1 10 100 1000 VDS(V) Doc ID 15421 Rev 5 7/21

Electrical characteristics STB18NM80, STF18NM80, STP18NM80, STW18NM80 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature VGS(th) RDS(on) (norm) (norm) 1.10 ID=250µA 2.1 ID=8.5A V =10V 1.9 GS 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) 8/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Test circuits 3 Test circuits Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 15421 Rev 5 9/21

Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° 10/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 22. D²PAK (TO-263) drawing 0079457_T Figure 23. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 15421 Rev 5 11/21

Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 12/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 24. TO-220FP drawing 7012510_Rev_K_B Doc ID 15421 Rev 5 13/21

Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 25. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15421 Rev 5 15/21

Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 26. TO-247 drawing 0075325_G Doc ID 15421 Rev 5 17/21

Packaging mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 5 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 18/21 Doc ID 15421 Rev 5

STB18NM80, STF18NM80, STP18NM80, STW18NM80 Packaging mechanical data Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 15421 Rev 5 19/21

Revision history STB18NM80, STF18NM80, STP18NM80, STW18NM80 6 Revision history T able 14. Document revision history Date Revision Changes 25-Feb-2009 1 First release. 07-Apr-2009 2 Section4: Package mechanical data has been modified. 20-Apr-2009 3 R max value has been corrected. DS(on) 09-Sep-2009 4 Document status promoted from preliminary data to datasheet. Figure12: Gate charge vs gate-source voltage has been 25-May-2012 5 updated. Minor text changes. 20/21 Doc ID 15421 Rev 5

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