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STB18NM60N产品简介:
ICGOO电子元器件商城为您提供STB18NM60N由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB18NM60N价格参考。STMicroelectronicsSTB18NM60N封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 600V 13A(Tc) 110W(Tc) D2PAK。您可以下载STB18NM60N参考资料、Datasheet数据手册功能说明书,资料中有STB18NM60N 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | MOSFET N-CH 600V 13A D2PAK |
产品分类 | FET - 单 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
品牌 | STMicroelectronics |
数据手册 | |
产品图片 | |
产品型号 | STB18NM60N |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | MDmesh™ II |
不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
不同Vds时的输入电容(Ciss) | 1000pF @ 50V |
不同Vgs时的栅极电荷(Qg) | 35nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 285 毫欧 @ 6.5A,10V |
产品目录页面 | |
供应商器件封装 | D2PAK |
其它名称 | 497-10297-1 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF244285?referrer=70071840 |
功率-最大值 | 110W |
包装 | 剪切带 (CT) |
安装类型 | 表面贴装 |
封装/外壳 | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
标准包装 | 1 |
漏源极电压(Vdss) | 600V |
电流-连续漏极(Id)(25°C时) | 13A (Tc) |
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Ω N-channel 600 V, 0.26 typ., 13 A MDmesh™ II Power MOSFET 2 in D PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB V R Order codes DSS DS(on) I P (@Tjmax) max. D TOT 3 STB18NM60N 110 W 1 23 1 D²PAK STF18NM60N 30 W TO-220FP 650 V < 0.285 Ω 13 A STP18NM60N TAB 110 STW18NM60N ■ 100% avalanche tested ■ Low input capacitance and gate charge 1 23 2 3 1 ■ Low gate input resistance TO-220 TO-247 Applications Figure 1. Internal schematic diagram ■ Switching applications Description (cid:36)(cid:8)(cid:18)(cid:12)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the (cid:39)(cid:8)(cid:17)(cid:9) company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N D²PAK Tape and reel STF18NM60N 18NM60N TO-220FP Tube STP18NM60N 18NM60N TO-220 Tube STW18NM60N 18NM60N TO-247 Tube October 2012 Doc ID 15868 Rev 4 1/21 This is information on a product in full production. www.st.com 21
Contents STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK, TO-220FP TO-220,TO-247 V Drain-source voltage 600 V DS V Gate- source voltage ± 25 GS I Drain current (continuous) at T = 25 °C 13 13 (1) A D C I Drain current (continuous) at T = 100 °C 8.2 8.2 (1) A D C I (2) Drain current (pulsed) 52 52 (1) A DM P Total dissipation at T = 25 °C 110 30 W TOT C Avalanche current, repetitive or not-repetitive I 4.5 A AR (pulse width limited by T max) J Single pulse avalanche energy E 350 mJ AS (starting T = 25 °C, I = I , V = 50 V) J D AR DD dv/dt(3) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all VISO three leads to external heat sink 2500 V (t=1 s;TC=25 °C) T Operating junction temperature J -55 to 150 °C T Storage temperature stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I ≤ 13 A, di/dt ≤ 400 A/µs, V ≤ 80 % V , V ≤ V SD DD (BR)DSS DS(peak) (BR)DSS Table 3. Thermal data Symbol Parameter D²PAK TO-220 TO-247 TO-220FP Unit R Thermal resistance junction-case max 1.14 4.17 thj-case R Thermal resistance junction-amb max 62.5 50 62.5 °C/W thj-amb R (1) Thermal resistance junction-pcb max 30 thj-pcb 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Doc ID 15868 Rev 4 3/21
Electrical characteristics STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA, V = 0 600 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = 600 V 1 µA DSS current (VGS = 0) VDS = 600 V, TJ=125 °C 10 µA Gate body leakage current I V = ±25 V ±100 nA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source on- R V = 10 V, I =6.5 A 0.260 0.285 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance CCiss Output capacitance VDS = 50 V, f =1 MHz, - 160000 - ppFF Coss Reverse transfer VGS = 0 3 pF rss capacitance Output equivalent C (1) V = 0, to 480 V, V =0 - 225 - pF oss eq. capacitance DS GS R Intrinsic resistance f=1 MHz open drain - 3.5 - Ω g Q Total gate charge V = 480 V, I = 13 A 35 nC g DD D Q Gate-source charge V = 10 V - 6 - nC gs GS Q Gate-drain charge (see Figure19) 20 nC gd 1. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V . DS Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 12 ns d(on) V = 300 V, I = 6.5 A, t Rise time DD D 15 ns r R = 4.7 Ω, V = 10 V - - t Turn-off delay time G GS 55 ns d(off) (see Figure18) t Fall time 25 ns f 4/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 13 A SD - I (1) Source-drain current (pulsed) 52 A SDM V (2) Forward on voltage I = 13 A, V =0 - 1.6 V SD SD GS trr Reverse recovery time ISD =13 A, di/dt =100 A/µs, 300 ns Qrr Reverse recovery charge VDD = 60 V - 4.0 µC I Reverse recovery current (see Figure20) 25 A RRM trr Reverse recovery time VDD = 60 V 360 ns Qrr Reverse recovery charge di/dt =100 A/µs, ISD = 13 A - 4.5 µC I Reverse recovery current Tj = 150°C (see Figure20) 25 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15868 Rev 4 5/21
Electrical characteristics STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and Figure 3. Thermal impedance for TO-220 and D²PAK D²PAK ID AM05525v1 (A) 10 Operatimiotne id n btyh is maarx eaR iDsS(on) 11000µµss Li 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID AM05526v1 (A) 10 Operamtiitoend i nb yt hims aax reRa DiSs(on) 11000µµss 1 Li 1ms 10ms Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM05527v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11000µµss Li 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 1 10 100 VDS(V) 6/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM05528v1 AM05529v1 ID ID (A) VGS=10V 7V (A) VDS=19V 24 24 6V 20 20 16 16 12 12 5V 8 8 4 4 0 4V 0 0 4 8 12 16 20 VDS(V) 0 2 4 6 8 10VGS(V) Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage RDS(Ω(on)) AM05530v1 V(VG)S AMV0D5S531v1 0.28 12 VDD=480V (V) VGS = 10 V ID=13A 500 0.27 10 0.26 400 VDS 0.25 8 300 0.24 6 0.23 200 4 0.22 2 100 0.21 0.20 0 0 0 2 4 6 8 10 12 ID(A) 0 10 20 30 40 Qg(nC) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM05532v1 Eoss AM05533v1 (pF) (µJ) 7 1000 Ciss 6 5 100 4 Coss 3 10 2 Crss 1 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Doc ID 15868 Rev 4 7/21
Electrical characteristics STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) AM05534v1 RDS(on) AM05535v1 (norm) (norm) 1.10 2.1 ID = 250 µA VGS = 10 V 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized B vs temperature Figure 17. Source-drain diode forward vs VDSS temperature VDS AM09028v1 VSD AM14768v1 (norm) ID=1mA (V) 1.10 1.4 1.08 1.2 TJ=-50°C 1.06 1.0 TJ=25°C 1.04 1.02 0.8 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0.94 0.92 0 -50 -25 0 25 50 75 100 TJ(°C) 0 2 4 6 8 10 12ISD(A) 8/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 15868 Rev 4 9/21
Package mechanical data STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° 10/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 24. D²PAK (TO-263) drawing 0079457_T Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 15868 Rev 4 11/21
Package mechanical data STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 12/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B Doc ID 15868 Rev 4 13/21
Package mechanical data STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15868 Rev 4 15/21
Package mechanical data STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Table 11. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID 15868 Rev 4 17/21
Packaging mechanical data STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 18/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 15868 Rev 4 19/21
Revision history STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N 6 Revision history T able 13. Document revision history Date Revision Changes 15-Jun-2009 1 First release – Added R typical value DS(on) – Added new package, mechanical data: I²PAK 11-Nov-2009 2 – Document status promoted from preliminary data to datasheet 06-Oct-2010 3 Inserted new value in Table5. Updated title and description on the cover page. Updated figures 10, 11, 14, 15 and 16. 01-Oct-2012 4 Updated Section4: Package mechanical data and Section5: Packaging mechanical data. 20/21 Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15868 Rev 4 21/21