STB160N75F3 STP160N75F3 - STW160N75F3 Ω 2 N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D PAK STripFET™ Power MOSFET Features R Type V DS(on) I DSS (max.) D STB160N75F3 75V 3.7 mΩ 120 A(1) 1 23 1 23 STP160N75F3 75V 4 mΩ 120 A(1) TO-220 TO-247 STW160N75F3 75V 4 mΩ 120 A(1) 1. Current limited by package 3 1 ■ Ultra low on-resistance D²PAK ■ 100% Avalanche tested Application Figure 1. Internal schematic diagram ■ Switching applications Description This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order codes Marking Package Packaging STB160N75F3 160N75F3 D²PAK Tape & reel STP160N75F3 160N75F3 TO-220 Tube STW160N75F3 160N75F3 TO-247 Tube October 2007 Rev 2 1/16 www.st.com 16

Contents STB160N75F3 - STP160N75F3 - STW160N75F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 75 V DS GS V Gate-source voltage ± 20 V GS I (1) Drain current (continuous) at T = 25°C 120 A D C I (1) Drain current (continuous) at T = 100°C 120 A D C I (2) Drain current (pulsed) 480 A DM PTOT Total dissipation at TC = 25°C 330 W Derating factor 2.2 W/°C dv/dt (3) Peak diode recovery voltage slope 20 V/ns E (4) Single pulse avalanche energy 600 mJ AS Tj Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Current limited by package 2. Pulse width limited by safe operating area 3. I < 120A, di/dt < 1100 A/µs, V < 60V, T < T SD DD J JMAX 4. Starting TJ = 25°C, I = 60A, V = 25V D DD Table 3. Thermal resistance Value Symbol Parameter Unit TO-220 TO-247 D²PAK Rthj-case Thermal resistance junction-case max 0.45 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 -- °C/W Rthj-pcb(1) Thermal resistance junction-pcb -- -- 50 °C/W Maximum lead temperature for soldering T 300 °C l purpose 1. When mounted on 1 inch² FR4 2 oz Cu 3/16

Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max Unit Drain-source V(BR)DSS breakdown voltage ID = 250µA, VGS= 0 75 V V = Max rating, DS Zero gate voltage 10 µA IDSS drain current (VGS = 0) VDS = Max 100 µA rating,@125°C Gate body leakage IGSS current (V = 0) VGS = ±20V ±200 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 4 V TO-220 Static drain-source on 3.5 4 mΩ R V = 10V, I = 60A TO-247 DS(on) resistance GS D 3.2 3.7 mΩ D²PAK Table 5. Dynamic Symbol Parameter Test conditions Min Typ Max Unit Ciss Input capacitance 6750 pF Output capacitance Coss VDS =25V, f=1 MHz, VGS=0 1080 pF Reverse transfer C 40 pF rss capacitance Qg Total gate charge VDD=37.5V, ID = 120A 85 nC Qgs Gate-source charge VGS =10V 27 nC Qgd Gate-drain charge (see Figure 16) 26 nC 4/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time 22 ns V =37.5 V, I = 60A, tr Rise time RDD=4.7Ω, V D=10V, 65 ns t Turn-off delay time G GS 100 ns d(off) (see Figure 18) t Fall time 15 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 120 A I (1) Source-drain current (pulsed) 480 A SDM VSD(2) Forward on voltage ISD=120A, VGS=0 1.5 V trr Reverse recovery time ISD=120A, VDD= 20 V, 70 ns Qrr Reverse recovery charge di/dt = 100 A/µs, Tj=25°C 150 nC I Reverse recovery current (see Figure 17) 4.2 A RRM 1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/16

Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / Figure 3. Thermal impedance for TO-220 / TO-247 TO-247 Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics Figure 8. Normalized BV vs temperature Figure 9. Static drain-source on resistance DSS Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs vs temperature temperature 7/16

Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 Figure 14. Source-drain diode forward characteristics 8/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16

Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/16

Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 12/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data D²PAK mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.50 0.55 L3 1.4 1.75 0.055 0.68 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 4° 13/16

Packaging mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 14/16

STB160N75F3 - STP160N75F3 - STW160N75F3 Revision history 6 Revision history T able 8. Document revision history Date Revision Changes 07-Feb-2007 1 First release 02-Oct-2007 2 New section has been added: Electrical characteristics (curves) 15/16

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