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STB11NM60FDT4产品简介:
ICGOO电子元器件商城为您提供STB11NM60FDT4由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB11NM60FDT4价格参考。STMicroelectronicsSTB11NM60FDT4封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 600V 11A(Tc) 160W(Tc) D2PAK。您可以下载STB11NM60FDT4参考资料、Datasheet数据手册功能说明书,资料中有STB11NM60FDT4 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | MOSFET N-CH 600V 11A D2PAK |
产品分类 | FET - 单 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
品牌 | STMicroelectronics |
数据手册 | |
产品图片 | |
产品型号 | STB11NM60FDT4 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | FDmesh™ |
不同Id时的Vgs(th)(最大值) | 5V @ 250µA |
不同Vds时的输入电容(Ciss) | 900pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 40nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 450 毫欧 @ 5.5A,10V |
产品目录页面 | |
供应商器件封装 | D2PAK |
其它名称 | 497-3511-2 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF74580?referrer=70071840 |
功率-最大值 | 160W |
包装 | 带卷 (TR) |
安装类型 | 表面贴装 |
封装/外壳 | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
标准包装 | 1,000 |
漏源极电压(Vdss) | 600V |
电流-连续漏极(Id)(25°C时) | 11A (Tc) |
STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP Ω 2 2 N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D PAK/I PAK FDmesh™ Power MOSFET (with fast diode) General features Type V R I DSS DS(on) D STB11NM60FD 600V <0.45Ω 11A 23 3 1 2 STB11NM60FD-1 600V <0.45Ω 11A TO-220 TO-220FP1 STP11NM60FD 600V <0.45Ω 11A STP11NM60FDFP 600V <0.45Ω 11A ■ 100% avalanche tested 3 ■ High dv/dt and avalanche capabilities 1 123 ■ Low input capacitance and gate charge DD²²PPAAKK I²PAK ■ Low gate input resistance ■ Tight process control and high manufacturing Internal schematic diagram yields Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications ■ Switching application Order codes Part number Marking Package Packaging STB11NM60FD B11NM60FD D²PAK Tape & reel STB11NM60FD-1 B11NM60FD I²PAK Tube STP11NM60FD P11NM60FD TO-220 Tube STP11NM60FDFP P11NM60FDFP TO-220FP Tube July 2006 Rev 9 1/17 www.st.com 17
Contents STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Unit Symbol Parameter TO-220/ TO-220FP D²PAK/I²PAK V Drain-source voltage (v = 0) 600 V DS gs V Drain-gate voltage (R = 20 kΩ) 600 V DGR GS V Gate- source voltage ±30 V GS I Drain current (continuos) at T = 25°C 11 11 (1) A D C I Drain current (continuos) at T = 100°C 7 7 (1) A D C I (2) Drain current (pulsed) 44 44 (1) A DM P Total dissipation at T = 25°C 160 35 W TOT C Derating factor 0.88 0.28 W/°C dv/dt (3) Peak diode recovery voltage slope 20 V/ns V Insulation winthstand voltage (dc) -- 2500 V ISO T Storage temperature –65 to 150 °C stg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I <11A, di/dt<400A/µs, V = 80% V SD DD (BR)DSS Table 2. Thermal resistance Value Symbol Parameter Unit TO-220 TO-220FP D²PAK/I²PAK R Thermal resistance junction-case Max 0.78 3.57 °C/W thj-case R Thermal resistance junction-ambient Max 62.5 °C/W thj-a Maximum lead temperature for soldering T 300 °C l purpose Table 3. Avalanche data Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 5.5 A AR (pulse width limited by T max) j Single pulse avalanche energy E 350 mJ AS (starting Tj = 25°C, I = I , V = 35V) D AR DD 3/17
Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE T able 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 600 V (BR)DSS voltage D GS Zero gate voltage VDS = Max rating 1 µA I DSS Drain current (VGS = 0) VDS=Max rating, TC=125°C 100 µA Gate-body leakage I V = ±30V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10V, I = 5.5A 0.40 0.45 W DS(on) resistance GS D T able 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit V > I x R g (1) Forward transconductance DS D(on) DS(on)max, 5.2 S fs I =5.5A D C Input capacitance 900 pF iss C Output capacitance V = 25V, f = 1 MHz, 350 pF oss DS V = 0 Reverse transfer GS C 35 pF rss capacitance Equivalent output V = 0V, V = 0V to C (2) GS DS 100 pF oss eq capacitance 400V f=1 MHz Gate DC Bias= 0 R Gate input resistance test signal level = 20mV 3 Ω G open drain Q Total gate charge 28 40 nC g V = 400V, I = 11A, DD D Q Gate-source charge V = 10V 7.8 nC gs GS (see Figure 15) Q Gate-drain charge 13 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V . DSS 4/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical characteristics T able 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V = 250V, I = 5.5A t Turn-on delay time DD D 20 ns d(on) R =4.7Ω V = 10V G GS t Rise time 16 ns r (see Figure 14) tr(Voff) Off-voltage rise time VDD = 400V, ID = 11A, 10 ns tf Fall time RG=4.7Ω, VGS = 10V 15 ns t Cross-over time (see Figure 16) 24 ns c T able 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I Source-drain current 11 A SD I (1) Source-drain current (pulsed) 44 A SDM V (2) Forward on voltage I = 11A, V = 0 1.5 V SD SD GS t Reverse recovery time I = 11A, V = 50V 140 ns rr SD DD Q Reverse recovery charge di/dt = 100A/µs, 680 nC rr I Reverse recovery current (see Figure 19) A A RRM I = 11A, V = 50V t Reverse recovery time SD DD 260 ns rr di/dt = 100A/µs, Q Reverse recovery charge 1600 nC rr Tj=150°C I Reverse recovery current 13 A RRM (see Figure 19) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/17
Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Safe operating areafor TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs vs temperature temperature 7/17
Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Figure 13. Source-drain diode forward characteristics 8/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Test circuit 3 Test circuit Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/17
Package mechanical data STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 10/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Package mechanical data TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/17
Package mechanical data STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 12/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Package mechanical data TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 13/17
Package mechanical data STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 14/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Packaging mechanical 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/17
Revision history STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 6 Revision history T able 8. Revision history Date Revision Changes 09-Sep-2004 6 Preliminary version 08-May-2006 7 D2PAK package inserted 22-May-2006 8 Updated values Table5: Dynamic 26-Jul-2006 9 New template, no content change 16/17
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 17/17
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