Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

S S N 1 November 2013 N 4 5 B SSN1N45B — N-Channel B-FET N - C 450 V, 0.5 A, 4.25 Ω h a n n Description Features e l B These N-Channel enhancement mode power field effect • 0.5 A, 450 V, RDS(on) = 4.25 Ω @ VGS = 10 V - transistors are produced using Fairchild’s proprietary, • Low Gate Charge (typical 6.5 nC) F E planar, DMOS technology. This advanced technology has • Low Crss (typical 6.5 pF) T been especially tailored to minimize on-state resistance, • 100% Avalanche Tested provide superior switching performance, and withstand • Improved dv/dt Capability high energy pulse in the avalanche and commutation • Gate-Source Voltage ± 50V Guaranteed mode. These devices are well suited for electronic ballasts based on half bridge configuration. D G G TO-92 D S S Absolute Maximum Ratings T = 25oC unless otherwise noted. C Symbol Parameter SSN1N45BTA Unit VDSS Drain-Source Voltage 450 V ID Drain Current - Continuous (TC = 25°C) 0.5 A - Continuous (TC = 100°C) 0.32 A IDM Drain Current - Pulsed (Note 1) 4.0 A VGSS Gate-Source Voltage ± 50 V EAS Single Pulsed Avalanche Energy (Note 2) 108 mJ IAR Avalanche Current (Note 1) 0.5 A EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25°C) 0.9 W Power Dissipation (TL = 25°C) 2.5 W - Derate above 25°C 0.02 W/°C TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering, TL 1/8" from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter SSN1N45BTA Unit RθJL Thermal Resistance, Junction-to-Lead, Max. (Note 5a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. (Note 5b) 140 °C/W ©2002 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com SSN1N45B Rev. C0

S Package Marking and Ordering Information S N Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 1 N SSN1N45BTA 1N45B TO-92 AMMO N/A N/A 2000 units 4 5 B Electrical Characteristics T = 25oC unless otherwise noted. — C Symbol Parameter Test Conditions Min Typ Max Unit N - C Off Characteristics h a BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 450 -- -- V n ∆/ B V D∆STSJ BCroeeaffkicdioewntn Voltage Temperature ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C nel B IDSS Zero Gate Voltage Drain Current VDS = 450 V, VGS = 0 V -- -- 10 µA -F VDS = 360 V, TC = 125°C -- -- 100 µA E T IGSSF Gate-Body Leakage Current, Forward VGS = 50 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -50 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.3 3.0 3.7 V VDS = VGS, ID = 250 mA 3.5 4.2 4.9 V RDS(on) SOtna-tRice Dsirsatiann-Sceource VGS = 10 V, ID = 0.25 A -- 3.4 4.25 Ω gFS Forward Transconductance VDS = 50 V, ID = 0.25 A -- 0.7 -- S Dynamic Characteristics Ciss Input Capacitance V = 25 V, V = 0 V, -- 185 240 pF DS GS Coss Output Capacitance f = 1.0 MHz -- 29 40 pF Crss Reverse Transfer Capacitance -- 6.5 8.5 pF Switching Characteristics td(on) Turn-On Delay Time V = 225 V, I = 0.5 A, -- 7.5 25 ns DD D tr Turn-On Rise Time R = 25 Ω -- 21 50 ns G td(off) Turn-Off Delay Time -- 23 55 ns tf Turn-Off Fall Time (Note 4) -- 36 80 ns Qg Total Gate Charge VDS = 360 V, ID = 0.5 A, -- 6.5 8.5 nC Qgs Gate-Source Charge VGS = 10 V -- 0.9 -- nC Qgd Gate-Drain Charge (Note 4) -- 3.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 0.5 A, -- 102 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/µs -- 0.26 -- µC (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) 1.Repetitive Rating : Pulse width limited by maximum junction temperature. 2.L = 75 mH, IAS = 1.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3.ISD ≤ 0.5 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. 5. a) Reference point of the RθJL is the drain lead. b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment. (RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design) ©2002 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com SSN1N45B Rev. C0

S (cid:18) !(cid:26)(cid:31)(cid:9)(cid:12)(cid:4)(cid:7)(cid:8)(cid:9)(cid:30)(cid:9)(cid:31)(cid:24)(cid:11)(cid:30)(cid:26)(cid:21)(cid:24)(cid:26)(cid:31)(cid:21) S N 1 N 4 5 B T o p : 1 5 .V0 GVS — 10.0 V 86..00 VV N 5.5 V I, Drain Current [A]D1100-10 Bottom : 45..50 VV I , Drain Current [A]D100 25℃150℃ -55℃ -Channel B ※ Notes : ※ Notes : - 12.. 2T5C 0=μ 2s5 ℃Pulse Test 12.. 2V5DS0 μ= s5 0PVulse Test FE 10-1 100 101 10-122 4 6 8 10 T V , Drain-Source Voltage [V] V , Gate-Source Voltage [V] DS GS Figure 1. On-Region Characteristics Figure 2.Transfer Characteristics 12 10 V = 10V A] ΩR [],DS(ON)Drain-Source On-Resistance2468 VGS = 20VGS ※ Note : TJ = 25℃ I, Reverse Drain Current [DR100 150℃ 25℃ ※12 N.. V2o5Gte0S sμ= : s0 VPulse Test 0 10-1 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation with Source Current and Temperature 400 CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) 12 VDS = 90V 10 V = 225V 300 DS Capacitance [pF]120000 CCCorissssss ※ 12 N.. Vfo =GteS 1 =; M 0H Vz V, Gate-Source Voltage [V]GS2468 VDS = 360V ※ Note : ID = 0.5 A 0 0 10-1 100 101 0 1 2 3 4 5 6 7 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2002 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com SSN1N45B Rev. C0

S (cid:18) !(cid:26)(cid:31)(cid:9)(cid:12)(cid:4)(cid:7)(cid:8)(cid:9)(cid:30)(cid:9)(cid:31)(cid:24)(cid:11)(cid:30)(cid:26)(cid:21)(cid:24)(cid:26)(cid:31)(cid:21) S (continued) N 1 N 4 5 1.2 3.0 B — 2.5 BV, (Normalized)DSSDrain-Source Breakdown Voltage011...901 ※21 .N. IVoDG t=eS s =2 : 500 V μA R, (Normalized)DS(ON)Drain-Source On-Resistance 0112....5050 ※12 N.. VIoDG t=eS s =0 :. 2105 VA N-Channel B-FE 0.8 0.0 T -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 T, Junction Temperature [oC] T, Junction Temperature [oC] J J Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature 0.6 Operation in This Area 101 is Limited by R DS(on) 0.5 100 µs Current [A]100 1 s1001 m0 sm1s ms Current [A]00..34 I, Drain D10-1 ※ Notes : DC I, Drain D0.2 10-2 123... TTSCJi n ==g l12e55 P0 o uColCse 0.1 10-3 0.0 100 101 102 103 25 50 75 100 125 150 V , Drain-Source Voltage [V] T, Case Temperature [℃] DS C Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 102 W] C/ oe [ D=0.5 s on 101 0.2 p es 0.1 R al 0.05 PDM m Z(t), TherθJL 100 00..0021 single pulse ※ 213 N... DZToθJtuMeJt Lsy-( tT:F) La= =tc 15t oPt02rD ,℃M D */= WZt1θ /MtJ2La(tx). 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t, Rec tangular P ulse D uration [sec] 1 Figure 11. Transient Thermal Response Curve ©2002 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com SSN1N45B Rev. C0

S S N 1 N 4 5 B VV — GGSS SSaammee TTyyppee 5500KKΩΩ aass DDUUTT QQgg N-C 1122VV 220000nnFF 330000nnFF 1100VV h a VV n VVGGSS DDSS QQ QQ n ggss ggdd e l B - DDUUTT F E IG = co33nmmsAAt. T CChhaarrggee Figure 12. Gate Charge Test Circuit & Waveform VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VV11G00GVVSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2002 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com SSN1N45B Rev. C0

S S N 1 N 4 5 B DDUUTT ++ — N - VV C DDSS h a __ n n e l B II SSDD - F LLL E T DDrriivveerr RR GG SSaammee TTyyppee aass DDUUTT VVDDDD VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD ddii//ddtt (( DDUUTT )) II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2002 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com SSN1N45B Rev. C0

S S Mechanical Dimensions N 1 N 4 5 B — N - C h a n n e l B - F E T Figure 16. TO92, Molded, 3-Lead, 0.200 In Line Spacing LD Form ( J61Z Option) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO92-F03 ©2002 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com SSN1N45B Rev. C0

S S N 1 N 4 5 B — TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. - C AccuPower™ F-PFS™ Sync-Lock™ BAiXtS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* han Build it Now™ GreenBridge™ PowerXS™ TinyBoost® n CCCCoToRrrLOee™PPSOLSUVWSOE™LRT™™ GGGGrrmTeeOaeex™nn™ FFPPSS™™ e-Series™ PQQQrFSuoiE™egTtr a®Smemrieasb™le Active Droop™ TTTTiiIinnnNyyyYBCLOouagPclcikTc™®®O™ el B-F CDuErUreXnPt ETEraDn®sfer Logic™ IISntOelPliMLAANXA™R™ Rapid™Configure™ TTiinnyyPPoWwMe™r™ ET DEcuoaSl CPAooRl™K® Manadr kBinegtt eSrm™all Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TinyWire™ TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* ® MicroFET™ SMART START™ SerDes™ MicroPak™ Solutions for Your Success™ Fairchild® MicroPak2™ SPM® FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. 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