SS12 THRU SS1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features DO-214AC/SMA  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Metal silicon junction,majority carrier conduction 0.067 (1.70) 0.110(2.80) 0.039 (1.00) 0.094(2.40)  Low power loss,high efficiency  Built-in strain relief,ideal for automated placement  High forward surge current capability 0.177(4.50) 0.157(3.99)  High temperature soldering guaranteed: 0.012(0.305) 0.006(0.152) 250 °C/10 seconds at terminals 0.087(2.20) 0.078(1.90) Mechanical Data 0.059(1.50) 0.035(0.90) 0.008(0.203)MAX. Cas e : JEDEC DO-214AC/SMA molded plastic body 0.205(5.20) Termina ls : Solderable per MIL-STD-750,Method 2026 0.188(4.80) Po larity : Color band denotes cathode end Moun ting Po s ition : Any Weigh t : 0.002 ounce, 0.07 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS1150 SS1200 SYMBOLS UNITS MDD MDD MDD MDD MDD MDD MDD MDD MDD Marking Code SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS1150 SS1200 Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current I(AV) 1.0 A at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave IFSM 30 A superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A VF 0.45 0.55 0.70 0.85 0.9 V Maximum DC reverse current TA=25℃ 0.5 0.2 at rated DCblocking voltage TA=125℃ IR 10.0 5.0 2.0 mA Typical junction capacitance (NOTE 1) CJ 110 90 pF Typical thermal resistance (NOTE 2) RθJA 88.0 ℃/W Operating junction temperature range TJ -50 to +125 -50 to +150 ℃ Storage temperature range TSTG -50 to +150 ℃ Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas DN:T20515A0 http://www.microdiode.com Rev:2020A0 Page :1

SS12 THRU SS1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere Typical Characterisitics Fig.1 Forward Current Derating Curve Fig.2 Typical Reverse Characteristics ent (A) 1.5 ent ( μA) 1100 43 TJ=100°C urr 1.0 urr C C ward erse 10 2 TJ=75°C v e For 0.5 s Re 101 SSSS1162-/SSSS112040 ag ou TJ=25°C er Single phase half-wave 60 Hz ne Av 0.0 resistive or inductive load sta 10 0 n 25 50 75 100 125 150 I 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance A) 20 500 nt ( 10 F) TJ=25°C e p 200 urr e ( C c d an 100 war acit staneous For 10..01 SSSSSSSS11112116/05/SS//SSSSSS1114181 2 20 Junction Cap 521000 SSSS1162-/SSSS112400 n I 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Fig.6- Typical Transient Thermal Impedance Forward Surge Current ） W Current (A) 332604 °C（dance/ 100 e e g p d Sur 18 al Im 10 war 12 erm or h F T Peak 8(J.3E DmEsC S Mingelteh oHda)l f Sine Wave sient 00 n 1 1 10 100 Tra 0.01 0.1 1 10 100 Number of Cycles at 60Hz t, Pulse Duration（sec） The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :2

SS12 THRU SS1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere Packing information unit:mm P0 Item Symbol Tolerance SMA P1 D1 d Carrier width A 0.1 2.80 E Carrier length B 0.1 5.33 F W1 Carrier depth C 0.1 2.36 W Sprocket hole d 0.05 1.50 B 13" Reel outside diameter D 2.0 330.00 13" Reel inner diameter D1 min 50.00 7" Reel outside diameter D 2.0 178.00 A P 7" Reel inner diameter D1 min 62.00 Feed hole diameter D2 0.5 13.00 Sprocket hole position E 0.1 1.75 Punch hole position F 0.1 5.50 D2 Punch hole pitch P 0.1 4.00 T Sprocket hole pitch P0 0.1 4.00 Embossment center P1 0.1 2.00 C Overall tape thickness T 0.1 0.28 Tape width W 0.3 12.00 D Reel width W1 1.0 18.00 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing COMPONENT INNER REEL CARTON APPROX. PACKAGE REEL SIZE REEL SPACING BOX BOX DIA, SIZE CARTON GROSS WEIGHT (pcs) (m/m) (pcs) (m/m) (m/m) (m/m) (pcs) (kg) SMA 7" 2,000 4.0 4,000 183*155*183 178 382*356*392 80,000 16.0 SMA 11" 5,000 4.0 10,000 290*290*38 330 310*310*360 80,000 11.0 SMA 13" 7,500 4.0 15,000 335*335*38 330 350*330*360 120,000 14.5 Suggested Pad Layout Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.90 0.154 D 2.41 0.095 E 5.45 0.215 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A0 Page :3