SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET V (V) 60 DS • AEC-Q101 Qualifiedc R (Ω) at V = 10 V 0.085 DS(on) GS • 100 % R and UIS Tested g R (Ω) at V = 4.5 V 0.130 DS(on) GS • Typical ESD Protection 800 V ID (A) 4 • Material categorization: Configuration Single For definitions of compliance please see www.vishay.com/doc?99912 SOT-23 (TO-236) D D 3 G 2 S 1 S G Top View N-Channel MOSFET Marking Code: 8Mxxx ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2360EES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 4 C Continuous Drain Current I D T = 125 °C 2.3 C Continuous Source Current (Diode Conduction) I 3.7 A S Pulsed Drain Current a I 16 DM Single Pulse Avalanche Current I 6 AS L = 0.1 mH Single Pulse Avalanche Energy E 1.8 mJ AS T = 25 °C 3 Maximum Power Dissipation a C P W D T = 125 °C 1 C Operating Junction and Storage Temperature Range T , T -55 to +175 °C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R 166 thJA °C/W Junction-to-Foot (Drain) R 50 thJF Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. S14-1082-Rev. F, 26-May-14 1 Document Number: 65352 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQ2360EES www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 μA 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 μA 1.5 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = ± 20 V - - ± 5.5 μA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 °C - - 50 μA DSS GS DS J V = 0 V V = 60 V, T = 175 °C - - 150 GS DS J On-State Drain Current a I V = 10 V V ≥ 5 V 10 - - A D(on) GS DS V = 10 V I = 6 A, T = 25 °C - 0.058 0.085 GS D J Ω V = 10 V I = 6 A, T = 125 °C - - 0.197 Drain-Source On-State Resistance a R GS D J DS(on) V = 10 V I = 6 A, T = 175 °C - - 0.258 GS D J Ω V = 4.5 V I = 5 A - 0.081 0.130 GS D Forward Transconductance b g V = -15 V, I = 1.9 A - 5.8 - S fs DS D Dynamic b Input Capacitance C - 295 370 iss Output Capacitance C V = 0 V V = 25 V, f = 1 MHz - 55 70 pF oss GS DS Reverse Transfer Capacitance C - 35 55 rss Total Gate Charge c Q - 7.40 12 g Gate-Source Charge c Q V = 10 V V = 30 V, I = 2 A - 0.95 - nC gs GS DS D Gate-Drain Charge c Q - 1.94 - gd Gate Resistance R f = 1 MHz 1.24 2.46 3.68 Ω g Turn-On Delay Time c t - 5 8 d(on) RTuisren -TOimff eD celay Time c tdt(or ff) ID ≅ 2V DAD, =V G3E0N V=, 1R0L V=, 1R5g Ω= 1 Ω -- 1101 1157 ns Fall Time c t - 8 12 f Source-Drain Diode Ratings and Characteristics b Pulsed Current a I - - 16 A SM Forward Voltage V I = 1.5 A, V = 0 - 0.8 1.2 V SD F GS Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1082-Rev. F, 26-May-14 2 Document Number: 65352 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQ2360EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 0.005 10-2 0.004 mA) A) 10-4 ent ( 0.003 ent ( urr urr TJ=150 °C e C TJ=25 °C e C 10-6 at at G 0.002 G - - SS SS TJ=25 °C G G I I 10-8 0.001 0.000 10-10 0 6 12 18 24 30 0 6 12 18 24 30 VGS-Gate-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 12 12 VGS=10Vthru5V 10 10 VGS=4V (A) 8 (A) 8 nt nt e e Curr 6 Curr 6 Drain Drain - D 4 - D 4 TC=25 °C I I TC=125 °C 2 VGS=3V 2 TC=- 55 °C 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 10 0.25 8 0.20 (S) TC=- 55 °C Ω) e ( c e n c ucta 6 stan 0.15 -Transcondgfs 4 TC=25 °C TC=125 °C - On-ResiDS(on) 0.10 VGS=4.5V VGS=10V 2 R 0.05 0 0.00 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 12 ID- DrainCurrent(A) ID-DrainCurrent(A) Transconductance On-Resistance vs. Drain Current S14-1082-Rev. F, 26-May-14 3 Document Number: 65352 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQ2360EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 600 10 V = 30 V DS I = 2 A D 500 V) 8 e ( citance (pF) 340000 Ciss ource Voltag 6 a S C - Cap 200 Gate-to- 4 100 Coss V - GS 2 C rss 0 0 0 10 20 30 40 50 60 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 2.5 10 d) ID= 1.5 A ze 2.1 ali V = 10 V 1 m GS A) or ( N nt ce( 1.7 urre TJ=25 °C On-Resistan 1.3 VGS= 4.5 V - SourceCS 0.1 TJ=150 °C - I 0.01 DS(on) 0.9 R 0.5 0.001 - 50 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 T -Junction Temperature (°C) VSD-Source-to-DrainVoltage(V) J On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.5 0.5 0.4 0.2 Ω) ( ce V) n ( Resista 0.3 ariance - 0.1 n- V - ODS(on) 0.2 TJ=125 °C VGS(th) - 0.4 ID=250 µA ID=5mA R 0.1 - 0.7 TJ=25 °C 0.0 - 1.0 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 175 VGS-Gate-to-SourceVoltage(V) TJ-Temperature(°C) On-Resistance vs. Gate-Source Voltage Threshold Voltage S14-1082-Rev. F, 26-May-14 4 Document Number: 65352 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQ2360EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 80 100 I Limited ID=1mA DM (V) 76 ge 10 Drain-to-SourceVolta 6782 - Drain Current (A) D 1 Limited by RDS(on)* 111 00m 0ms μ ss I 100 ms - 0.1 DS 64 V T = 25 °C BVDSS Limited 1s, 10s, DC C Single Pulse 60 0.01 - 50 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TJ-JunctionTemperature(°C) VDS - Drain-to-Source Voltage (V) * V > minimum V at which R is specified GS GS DS(on) Drain-Source Breakdown vs. Junction Temperature Safe Operating Area THERMAL RATINGS (T = 25 °C, unless otherwise noted) A 2 1 Duty Cycle = 0.5 tn e isnarT evitceffE dezilamecnadepmI lamrehT 0.1 0000....210025 1NP.o DDteMust:y Cyt1clet,2 D = t1 roN 2. Per Unit Base = RthtJ2A = 166°C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S14-1082-Rev. F, 26-May-14 5 Document Number: 65352 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQ2360EES www.vishay.com Vishay Siliconix THERMAL RATINGS (T = 25 °C, unless otherwise noted) A 2 1 tn Duty Cycle = 0.5 e is narT eecnad vitceffEepmI la 0.2 dezilamrehT 0.1 0.1 m 0.05 ro N 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65352. S14-1082-Rev. F, 26-May-14 6 Document Number: 65352 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQ2360EES www.vishay.com Vishay Siliconix REVISION HISTORY a REVISION DATE DESCRIPTION OF CHANGE • Correction of R value used in calculation of maximum continuous drain current and safe operating DS(on) F 04-Apr-14 area curve. • V = 4.5 V curve added to on-resistance vs. junction temperature graph. GS Note a. As of April 2014 S14-1082-Rev. F, 26-May-14 7 Document Number: 65352 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 E 1 2 e S e1 D 0.10 mm C A A2 0.004" C q 0.25 mm Gauge Plane Seating Plane Seating Plane A1 C L L1 MILLIMETERS INCHES Dim Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3° 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 www.vishay.com 09-Jul-01 1

AN807 Vishay Siliconix (cid:1) Mounting LITTLE FOOT SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated ambient air. This pattern uses all the available area underneath the circuit and small-signal packages which have been been modified body for this purpose. to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. 0.114 2.9 0.081 See Application Note 826, Recommended Minimum Pad 2.05 Patterns With Outline Drawing Access for Vishay Siliconix 0.150 3.8 MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET 0.059 footprint . In converting this footprint to the pad set for a power 1.5 device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.0394 0.037 1.0 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional Since surface-mounted packages are small, and reflow soldering function of providing the thermal connection from the package to is the most common way in which these are affixed to the PC the PC board. The total cross section of a copper trace connected board, “thermal” connections from the planar copper to the pads to the drain may be adequate to carry the current required for the have not been used. Even if additional planar copper area is used, application, but it may be inadequate thermally. Also, heat spreads there should be no problems in the soldering process. The actual in a circular fashion from the heat source. In this case the drain pin solder connections are defined by the solder mask openings. By is the heat source when looking at heat spread on the PC board. combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. Figure 1 shows the footprint with copper spreading for the SOT-23 A final item to keep in mind is the width of the power traces. The package. This pattern shows the starting point for utilizing the absolute minimum power trace width must be determined by the board area available for the heat spreading copper. To create this amount of current it has to carry. For thermal reasons, this pattern, a plane of copper overlies the drain pin and provides minimum width should be at least 0.020 inches. The use of wide planar copper to draw heat from the drain lead and start the traces connected to the drain plane provides a low-impedance process of spreading the heat so it can be dissipated into the path for heat to move away from the device. Document Number: 70739 www.vishay.com 26-Nov-03 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SOT-23 0.037 0.022 (0.950) (0.559) 6 2) 9 5) 0 9 4 4 1 6 0 2 0. 2. 0. 1. ( ( 9 4) 2 2 0 7 0. 0. ( 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72609 www.vishay.com Revision: 21-Jan-08 25

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